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1. 发明授权

US06379472B1 Group III-nitride thin films grown using MBE and bismuth 失效
标题翻译：使用MBE和铋生长的III族氮化物薄膜
公开(公告)号：US06379472B1
公开(公告)日：2002-04-30
申请号：US09710791
申请日：2000-11-10
申请人： Christian K. Kisielowski , Michael Rubin
发明人： Christian K. Kisielowski , Michael Rubin
IPC分类号： C30B2938
CPC分类号： C30B23/02 , C30B29/406
摘要： The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 &mgr;m and 20 &mgr;m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7×10−7 cm2/sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.
摘要翻译：本发明包括在约1000K或更低的温度下使用MBE在铋存在下生长氮化镓膜。本发明还包括使用本发明的制造方法制造的氮化镓膜。本发明的膜可以掺杂有镁或其它掺杂剂。使用中空阳极约束发光放电氮等离子体源在蓝宝石衬底上生长氮化镓膜。当使用铋作为表面活性剂时，观察到10μm和20μm之间的二维氮化镓晶体尺寸。这是当GaN膜在类似的情况下生长而没有铋时观察到的晶体尺寸的20-40倍。据认为观察到的晶体尺寸增加是由于铋导致镓的表面扩散系数增加。计算值为4.7x10-7 cm2 / sec。显示出1258K的虚拟衬底温度比实际高260度。

2. 发明授权

US06139629A Group III-nitride thin films grown using MBE and bismuth 失效
标题翻译：使用MBE和铋生长的III族氮化物薄膜
公开(公告)号：US06139629A
公开(公告)日：2000-10-31
申请号：US55064
申请日：1998-04-03
申请人： Christian K. Kisielowski , Michael Rubin
发明人： Christian K. Kisielowski , Michael Rubin
IPC分类号： C30B23/02 , C30B23/06
CPC分类号： C30B23/02 , C30B29/406
摘要： The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.
摘要翻译：本发明包括在约1000K或更低的温度下使用MBE在铋存在下生长氮化镓膜。本发明还包括使用本发明的制造方法制造的氮化镓膜。本发明的膜可以掺杂有镁或其它掺杂剂。使用中空阳极约束发光放电氮等离子体源在蓝宝石衬底上生长氮化镓膜。当使用铋作为表面活性剂时，观察到尺寸在10μm和20μm之间的二维氮化镓晶体尺寸。这是当GaN膜在类似的情况下生长而没有铋时观察到的晶体尺寸的20-40倍。据认为观察到的晶体尺寸增加是由于铋导致镓的表面扩散系数增加。计算值为4.7x10-7 cm2 / sec。显示出1258K的虚拟衬底温度比实际高260度。

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