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1. 发明申请

US20140147192A1 SILICON ALIGNMENT PINS: AN EASY WAY TO REALIZE A WAFER-TO-WAFER ALIGNMENT 有权
标题翻译：硅对准引脚：轻松实现波形对准对准
公开(公告)号：US20140147192A1
公开(公告)日：2014-05-29
申请号：US13871830
申请日：2013-04-26
申请人： Cecile Jung-Kubiak , Theodore Reck , Bertrand Thomas , Robert H. Lin , Alejandro Peralta , John J. Gill , Choonsup Lee , Jose V. Siles , Risaku Toda , Goutam Chattopadhyay , Ken B. Cooper , Imran Mehdi
发明人： Cecile Jung-Kubiak , Theodore Reck , Bertrand Thomas , Robert H. Lin , Alejandro Peralta , John J. Gill , Choonsup Lee , Jose V. Siles , Risaku Toda , Goutam Chattopadhyay , Ken B. Cooper , Imran Mehdi
IPC分类号： F16B5/00
CPC分类号： F16B5/025 , F16B19/004 , H05K13/0015 , Y10T29/49778 , Y10T29/49895 , Y10T403/20
摘要： A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
摘要翻译：硅对准销用于对准在半导体芯片和/或金属部件中制造的部件的连续层，以使得具有层状结构的装置的组装更容易。该销被制成可压缩的结构，其可以被挤压以减小其外径，将一端装配到限定在待组装成层状结构的材料层中的对应的对准袋或空腔中，然后允许膨胀以产生与空腔的过盈配合。然后可以将另一端插入限定在与第一层配合的第二材料层的表面中的相应的空腔中。当引脚与两者配对时，两个层都在注册表中。可以组装多层以创建多层结构。呈现这种装置的示例。

2. 发明申请

US20150300884A1 340 GHz MULTIPIXEL TRANSCEIVER 有权
标题翻译： 340 GHz MULTIPIXEL收发器
公开(公告)号：US20150300884A1
公开(公告)日：2015-10-22
申请号：US13902529
申请日：2013-05-24
申请人： Theodore Reck , Ken B. Cooper , Cecile Jung-Kubiak , Choonsup Lee , John J. Gill
发明人： Theodore Reck , Ken B. Cooper , Cecile Jung-Kubiak , Choonsup Lee , John J. Gill
IPC分类号： G01J5/20 , G01S17/02
CPC分类号： G01J5/20 , G01J2005/0077 , G01J2005/204 , G01S7/02 , G01S7/036 , G01S13/887 , G01S13/89
摘要： A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.
摘要翻译：使用在半导体层内限定的通孔进行通信的半导体层堆叠来构造多像素太赫兹收发器。通过使用一叠半导体层，可以容易地测试每一层的各种电功能，而无需组装整个收发器。此外，该设计允许制造具有相距10mm的像素的收发器。

3. 发明授权

US08780012B2 Dielectric covered planar antennas 有权
标题翻译：电介质覆盖的平面天线
公开(公告)号：US08780012B2
公开(公告)日：2014-07-15
申请号：US12828068
申请日：2010-06-30
申请人： Nuria Llombart Juan , Choonsup Lee , Goutam Chattopadhyay , John J. Gill , Anders J. Skalare , Peter H. Siegel
发明人： Nuria Llombart Juan , Choonsup Lee , Goutam Chattopadhyay , John J. Gill , Anders J. Skalare , Peter H. Siegel
IPC分类号： H01Q19/06
CPC分类号： H01Q19/09 , G01N21/3581 , H01Q19/06 , H01Q21/06
摘要： An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.
摘要翻译：公开了适用于以太赫兹频率集成的阵列的天线元件。天线元件包括延伸的球形（例如半球形）半导体透镜。硅，由漏波波导馈电馈送的天线。延伸的球面透镜包括与基本上平面的透镜延伸部相邻的基本上球形的透镜。通过耦合到接地平面的波导块，在接地平面和基本上平面的透镜延伸部之间形成的谐振腔中激发了一对TE / TM泄漏波模式。由于这些模式，主要的馈送在镜头内辐射出一个照亮镜头小部分的指示图案。天线结构与已知的半导体制造技术兼容，并且能够生产大幅面成像阵列。

4. 发明申请

US20140144009A1 Microfabrication Technique of Silicon Microlens Array for Terahertz Applications 审中-公开
标题翻译：用于太赫兹应用的硅微透镜阵列的微加工技术
公开(公告)号：US20140144009A1
公开(公告)日：2014-05-29
申请号：US13869292
申请日：2013-04-24
申请人： Goutam CHATTOPADHYAY , Imran Mehdi , Choonsup Lee , John J. Gill , Cecile Jung-Kubiak , Nuria Llombart
发明人： Goutam CHATTOPADHYAY , Imran Mehdi , Choonsup Lee , John J. Gill , Cecile Jung-Kubiak , Nuria Llombart
IPC分类号： H01P11/00 , C04B41/00
摘要： A set of antenna geometries for use in integrated arrays at terahertz frequencies are described. Two fabrication techniques to construct such antennas are presented. The first technique uses an advanced laser micro-fabrication, allowing fabricating advanced 3D geometries. The second technique uses photolithographic processes, allowing the fabrication of arrays on a single wafer in parallel.
摘要翻译：描述了用于在太赫兹频率的集成阵列中的一组天线几何形状。提出了构建这种天线的两种制造技术。第一种技术使用先进的激光微加工，可以制造先进的3D几何形状。第二种技术使用光刻工艺，允许在单个晶片上并行制造阵列。

5. 发明授权

US09143084B2 On-chip power-combining for high-power schottky diode based frequency multipliers 有权
标题翻译：基于高功率肖特基二极管的频率乘法器的片上功率组合
公开(公告)号：US09143084B2
公开(公告)日：2015-09-22
申请号：US13595964
申请日：2012-08-27
申请人： Jose Vicente Siles Perez , Goutam Chattopadhyay , Choonsup Lee , Erich T. Schlecht , Cecile D. Jung-Kubiak , Imran Mehdi
发明人： Jose Vicente Siles Perez , Goutam Chattopadhyay , Choonsup Lee , Erich T. Schlecht , Cecile D. Jung-Kubiak , Imran Mehdi
IPC分类号： H03B19/16 , H01L27/08 , H01L21/77 , H03B19/18 , H01L23/66
CPC分类号： H03B19/16 , H01L21/77 , H01L23/66 , H01L27/0814 , H01L2223/6627 , H01L2223/6677 , H01L2223/6683 , H01L2224/48091 , H01L2924/12032 , H03B19/18 , H03B2200/0032 , H03B2200/0076 , H01L2924/00014 , H01L2924/00
摘要： A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
摘要翻译：一种新颖的MMIC片上功率组合倍频器及其制造方法，包括集成在单个芯片上的两个或更多个乘法结构，其中每个集成乘法结构是电气相同的，并且每个乘法结构包括一个用于接收在芯片上输入的毫米波，亚毫米波或太赫兹频率范围内的输入信号的输入天线（E-probe），将输入天线与平衡的两个或更多个肖特基二极管电连接的带状线输入匹配网络配置，用作非线性半导体器件的两个或更多个肖特基二极管，以从输入信号中产生谐波并产生相乘的输出信号，基于带状线的输出匹配网络，用于将输出信号从肖特基二极管传输到输出天线，以及输出天线（E-probe），用于将输出信号从芯片传输到输出波导反相中任务线。

6. 发明申请

US20120013517A1 INTEGRATED LENS ANTENNAS FOR MULTI-PIXEL RECEIVERS FOR PLANETARY AND ASTRONOMICAL INSTRUMENTS 审中-公开
标题翻译：用于商业和科学仪器的多像素接收器的集成镜头天线
公开(公告)号：US20120013517A1
公开(公告)日：2012-01-19
申请号：US13160092
申请日：2011-06-14
申请人： Choonsup Lee , Goutam Chattopadhyay , Nuria Llombart
发明人： Choonsup Lee , Goutam Chattopadhyay , Nuria Llombart
IPC分类号： H01Q15/08 , H01P11/00
CPC分类号： H01Q13/22 , H01Q15/08 , Y10T29/49016
摘要： Methods and apparatus for integrating lens antennas for receivers are disclosed. A method of fabricating a lens in accordance with one or more embodiments of the present invention comprises integrating lens material with a dielectric material and flowing the lens material into a desired lens shape. An integrated lens antenna in accordance with one or more embodiments of the present invention comprises a dielectric material, a waveguide feed, coupled to the dielectric material through a leaky wave cavity, and a lens, coupled to the dielectric material opposite the leaky wave cavity, wherein material is first deposited onto the dielectric material, flowed into a desired lens shape and the desired lens shape is transferred to the dielectric material.
摘要翻译：公开了用于集成用于接收机的透镜天线的方法和装置。根据本发明的一个或多个实施例的制造透镜的方法包括将透镜材料与介电材料集成并将透镜材料流动成所需的透镜形状。根据本发明的一个或多个实施例的集成透镜天线包括电介质材料，通过漏波腔耦合到电介质材料的波导馈送，以及耦合到与泄漏波腔相对的介电材料的透镜，其中首先将材料沉积到电介质材料上，流入所需的透镜形状，并将期望的透镜形状转移到电介质材料。

7. 发明授权

US07595477B2 Anti- reflective device having an anti-reflection surface formed of silicon spikes with nano-tips 失效
标题翻译：防反射装置具有由具有纳米尖端的硅尖形成的抗反射表面
公开(公告)号：US07595477B2
公开(公告)日：2009-09-29
申请号：US11518537
申请日：2006-09-07
申请人： Youngsman Bae , Sohrab Mooasser , Harish Manohara , Choonsup Lee , Kungsam Bae
发明人： Youngsman Bae , Sohrab Mooasser , Harish Manohara , Choonsup Lee , Kungsam Bae
IPC分类号： H01J3/14
CPC分类号： G02B1/118 , G02B27/0018
摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.
摘要翻译：描述了具有防反射表面的装置。该器件包括在衬底上形成有多个硅尖峰的硅衬底。在硅尖上形成第一金属层以形成抗反射表面。该装置还包括延伸穿过基底的孔。在基板上形成第二金属层。第二金属层包括与孔对准的孔。间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

8. 发明申请

US20070112263A1 Optically powered and optically data-transmitting wireless intraocular pressure sensor device 审中-公开
标题翻译：光学电源和光学数据传输无线眼压传感器设备
公开(公告)号：US20070112263A1
公开(公告)日：2007-05-17
申请号：US11594054
申请日：2006-11-06
申请人： Wolfgang Fink , Eui-Hyeok Yang , Yoshi Hishinuma , Choonsup Lee , Thomas George , Mark Humayun
发明人： Wolfgang Fink , Eui-Hyeok Yang , Yoshi Hishinuma , Choonsup Lee , Thomas George , Mark Humayun
IPC分类号： A61B3/16
CPC分类号： A61B3/16
摘要： An optically powered and optically data-transmitting wireless intraocular pressure sensor device for detecting excessive intraocular pressure above a predetermined threshold pressure, comprising a pressure switch that is sized and configured to be placed in an eye, wherein said pressure switch is activated when the intraocular pressure is higher than the predetermined threshold pressure. In one embodiment, the pressure sensor device is a micro electromechanical system.
摘要翻译：一种用于检测高于预定阈值压力的过度眼内压的光学和光数据传输无线眼内压传感器装置，包括尺寸和构造为放置在眼睛中的压力开关，其中所述压力开关在眼压高于预定阈值压力。在一个实施例中，压力传感器装置是微机电系统。

9. 发明授权

US08693973B2 670 GHz Schottky diode based subharmonic mixer with CPW circuits and 70 GHz IF 有权
标题翻译： 670 GHz基于肖特基二极管的次谐波混频器，CPW电路和70 GHz IF
公开(公告)号：US08693973B2
公开(公告)日：2014-04-08
申请号：US13462679
申请日：2012-05-02
申请人： Goutam Chattopadhyay , Erich T. Schlecht , Choonsup Lee , Robert H. Lin , John J. Gill , Seth Sin , Imran Mehdi
发明人： Goutam Chattopadhyay , Erich T. Schlecht , Choonsup Lee , Robert H. Lin , John J. Gill , Seth Sin , Imran Mehdi
IPC分类号： H04B1/26
CPC分类号： H03D7/02 , H01L29/20 , H01L29/66212 , H01L29/872 , H03D9/0633
摘要： A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.
摘要翻译：基于共面波导（CPW）的次谐波混频器使用GaAs肖特基二极管在670 GHz工作。混频器的一个例子有LO输入，RF输入和IF输出。另一个可能的混频器具有LO输入，IF输入和RF输出。每个输入或输出连接到具有匹配网络的共面波导。一对反并联二极管提供两倍于LO频率的信号，然后与第二信号混合以提供具有和和差频率的信号。感兴趣的输出信号在通过调谐到感兴趣的频率范围的带通滤波器之后被接收。

10. 发明申请

US20100009495A1 Anti-reflective device having an anti-reflective surface formed of silicon spikes with nano-tips 有权
标题翻译：防反射装置具有由具有纳米尖端的硅尖形成的抗反射表面
公开(公告)号：US20100009495A1
公开(公告)日：2010-01-14
申请号：US12462960
申请日：2009-08-12
申请人： Youngsam Bae , Harish Manohara , Sohrab Mobasser , Choonsup Lee
发明人： Youngsam Bae , Harish Manohara , Sohrab Mobasser , Choonsup Lee
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： G02B1/118 , G02B27/0018
摘要： Described is a device having an anti-reflection surface. The device comprises a silicon substrate with a plurality of silicon spikes formed on the substrate. A first metallic layer is formed on the silicon spikes to form the anti-reflection surface. The device further includes an aperture that extends through the substrate. A second metallic layer is formed on the substrate. The second metallic layer includes a hole that is aligned with the aperture. A spacer is attached with the silicon substrate to provide a gap between an attached sensor apparatus. Therefore, operating as a Micro-sun sensor, light entering the hole passes through the aperture to be sensed by the sensor apparatus. Additionally, light reflected by the sensor apparatus toward the first side of the silicon substrate is absorbed by the first metallic layer and silicon spikes and is thereby prevented from being reflected back toward the sensor apparatus.
摘要翻译：描述了具有防反射表面的装置。该器件包括在衬底上形成有多个硅尖峰的硅衬底。在硅尖上形成第一金属层以形成抗反射表面。该装置还包括延伸穿过基底的孔。在基板上形成第二金属层。第二金属层包括与孔对准的孔。间隔件与硅衬底附接以在附接的传感器装置之间提供间隙。因此，作为微太阳传感器操作，进入孔的光通过孔，以由传感器装置检测。此外，由传感器装置朝向硅衬底的第一侧反射的光被第一金属层和硅尖头吸收，从而防止反射回传感器装置。

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