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1. 发明申请

US20110300711A1 METHOD AND SYSTEM FOR PATTERNING A SUBSTRATE 有权
标题翻译：用于绘制衬底的方法和系统
公开(公告)号：US20110300711A1
公开(公告)日：2011-12-08
申请号：US12859606
申请日：2010-08-19
申请人： Patrick M. Martin , Steven Carlson , Choong-Young Oh , Jung-Wook Park
发明人： Patrick M. Martin , Steven Carlson , Choong-Young Oh , Jung-Wook Park
IPC分类号： H01L21/311 , G21K5/00 , H01L21/263
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337
摘要： A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.
摘要翻译：图案化衬底的方法包括提供由相邻抗蚀剂特征之间的第一间距和第一间隙宽度限定的抗蚀剂特征阵列。将粒子引入到抗蚀剂特征阵列中，其中抗蚀剂特征阵列变硬。颗粒的引入可能导致抗蚀剂特征的临界尺寸的降低。侧壁设置在硬化抗蚀剂特征的侧部。在形成侧壁之后，去除硬化的抗蚀剂特征，留下设置在基底上的隔离侧壁阵列。侧壁阵列提供用于在设置在侧壁下方的衬底层中的特征的双重图案化的掩模，其中形成在衬底中的特征阵列具有等于第一间距的一半的第二间距。

2. 发明授权

US08912097B2 Method and system for patterning a substrate 有权
标题翻译：图案化基板的方法和系统
公开(公告)号：US08912097B2
公开(公告)日：2014-12-16
申请号：US12859606
申请日：2010-08-19
申请人： Patrick M. Martin , Steven Carlson , Choong-Young Oh , Jung-Wook Park
发明人： Patrick M. Martin , Steven Carlson , Choong-Young Oh , Jung-Wook Park
IPC分类号： H01L21/302
CPC分类号： H01L21/32139 , G03F7/40 , G03F7/405 , H01L21/0273 , H01L21/0337
摘要： A method of patterning a substrate comprises providing an array of resist features defined by a first pitch and a first gap width between adjacent resist features. Particles are introduced into the array of resist features, wherein the array of resist features becomes hardened. The introduction of particles may cause a reduction in critical dimension of the resist features. Sidewalls are provided on side portions of hardened resist features. Subsequent to the formation of the sidewalls, the hardened resist features are removed, leaving an array of isolated sidewalls disposed on the substrate. The sidewall array provides a mask for double patterning of features in the substrate layers disposed below the sidewalls, wherein an array of features formed in the substrate has a second pitch equal to half that of the first pitch.
摘要翻译：图案化衬底的方法包括提供由相邻抗蚀剂特征之间的第一间距和第一间隙宽度限定的抗蚀剂特征阵列。将粒子引入到抗蚀剂特征阵列中，其中抗蚀剂特征阵列变硬。颗粒的引入可能导致抗蚀剂特征的临界尺寸的降低。侧壁设置在硬化抗蚀剂特征的侧部。在形成侧壁之后，去除硬化的抗蚀剂特征，留下设置在基底上的隔离侧壁阵列。侧壁阵列提供用于在设置在侧壁下方的衬底层中的特征的双重图案化的掩模，其中形成在衬底中的特征阵列具有等于第一间距的一半的第二间距。

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