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    • 1. 发明申请
    • Method of transferring a wafer
    • 转印晶片的方法
    • US20080287044A1
    • 2008-11-20
    • US11748477
    • 2007-05-14
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • B24B7/04
    • B24B37/345
    • A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
    • 公开了一种转印晶片的方法。 该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片,其中晶片具有第一表面和第二表面,第一表面面向基座,流体同时喷射到第一表面上,以避免第一表面与基座接触 流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。 由于溶解在流体中的成电化学物质,在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。
    • 3. 发明授权
    • Method of transferring a wafer
    • 转印晶片的方法
    • US08142258B2
    • 2012-03-27
    • US12964716
    • 2010-12-09
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • B24B1/00
    • B24B37/345
    • A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
    • 公开了一种转印晶片的方法。 该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片,其中晶片具有第一表面和第二表面,第一表面面向基座,流体同时喷射到第一表面上,以避免第一表面与基座接触 流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。 由于溶解在流体中的成电化学物质,在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。
    • 4. 发明申请
    • Method of transferring a wafer
    • 转印晶片的方法
    • US20110076129A1
    • 2011-03-31
    • US12964716
    • 2010-12-09
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • Kuo-Wei YangHui-Shen ShihChih-Jen MaoCho-Long Lin
    • B65G47/22
    • B24B37/345
    • A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid.
    • 公开了一种转印晶片的方法。 该方法包括提供一个基座和至少一个延伸穿过基座的喷嘴; 使用第一机器人在基座上方设置晶片,其中晶片具有第一表面和第二表面,第一表面面向基座,流体同时喷射到第一表面上,以避免第一表面与基座接触 流体含有溶解于其中的成电化学物质; 并使用机器人取出晶片进行交付。 由于溶解在流体中的成电化学物质,在喷射流体时避免了在晶片上引起放电损坏的瀑布效应。