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1. 发明申请

US20130277718A1 JFET DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： JFET器件及其制造方法
公开(公告)号：US20130277718A1
公开(公告)日：2013-10-24
申请号：US13450373
申请日：2012-04-18
申请人： Wing Chor Chan , Chih Min Hu , Jeng Gong
发明人： Wing Chor Chan , Chih Min Hu , Jeng Gong
IPC分类号： H01L29/812 , H01L21/338
CPC分类号： H01L29/42316 , H01L29/1058 , H01L29/1075 , H01L29/808
摘要： A disclosed semiconductor device includes a semiconductor deposition layer formed over an insulation structure and above a substrate. The device includes a gate formed over a contact region between first and second implant regions in the semiconductor deposition layer. The first and second implant regions both have a first conductivity type, and the gate has a second conductivity type. The device may further include a second gate formed beneath the semiconductor deposition layer.
摘要翻译：所公开的半导体器件包括形成在绝缘结构之上和衬底之上的半导体淀积层。该器件包括形成在半导体淀积层中的第一和第二注入区域之间的接触区域上的栅极。第一和第二注入区都具有第一导电类型，栅极具有第二导电类型。器件还可以包括形成在半导体淀积层下面的第二栅极。

2. 发明申请

US20120025278A1 SCHOTTKY DIODE 有权
标题翻译：肖特基二极管
公开(公告)号：US20120025278A1
公开(公告)日：2012-02-02
申请号：US12845925
申请日：2010-07-29
申请人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
发明人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
IPC分类号： H01L29/812
CPC分类号： H01L29/872 , H01L29/402 , H01L29/423
摘要： A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.
摘要翻译：肖特基二极管包括可以用作阴极的欧姆层和可以用作阳极的金属层，以及由在欧姆层和金属层之间延伸的半导体材料形成的漂移通道。漂移沟道包括与欧姆接触层相邻的重掺杂区域。漂移通道与金属层形成肖特基势垒。在肖特基二极管反向偏置的情况下，提供夹断机构来夹紧漂移通道。结果，在肖特基二极管的反向偏置条件下，金属层与欧姆接触层之间的饱和或漏电流的电平降低。

3. 发明申请

US20110220973A1 JUNCTION-FIELD-EFFECT-TRANSISTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：连接场效应晶体管器件及其制造方法
公开(公告)号：US20110220973A1
公开(公告)日：2011-09-15
申请号：US12795486
申请日：2010-06-07
申请人： Chih-Min HU , Chung Yu HUNG , Wing Chor CHAN , Jeng GONG
发明人： Chih-Min HU , Chung Yu HUNG , Wing Chor CHAN , Jeng GONG
IPC分类号： H01L27/085
CPC分类号： H01L29/66901 , H01L29/808
摘要： A junction-field-effect-transistor (JFET) device includes a substrate of a first-type impurity, a first well region of a second-type impurity in the substrate, a pair of second well regions of the first-type impurity separated from each other in the first well region, a third well region of the first-type impurity between the pair of second well regions, a first diffused region of the second-type impurity between the third well region and one of the second well regions, and a second diffused region of the second-type impurity between the third well region and the other one of the second well regions.
摘要翻译：结场效应晶体管（JFET）器件包括第一类杂质的衬底，衬底中第二类杂质的第一阱区，第一类杂质的一对第二阱区与在第一阱区域中彼此相对的第一阱区域，第一阱区域之间的第一类型杂质的第三阱区域，第三阱区域和第二阱区域之一中的第二类型杂质的第一扩散区域，以及在第三阱区域和第二阱区域中的另一个区域之间的第二类型杂质的第二扩散区域。

4. 发明授权

US08350304B2 Junction-field-effect-transistor devices and methods of manufacturing the same 有权
标题翻译：结场效应晶体管器件及其制造方法
公开(公告)号：US08350304B2
公开(公告)日：2013-01-08
申请号：US12795486
申请日：2010-06-07
申请人： Chih-Min Hu , Chung Yu Hung , Wing Chor Chan , Jeng Gong
发明人： Chih-Min Hu , Chung Yu Hung , Wing Chor Chan , Jeng Gong
IPC分类号： H01L29/66
CPC分类号： H01L29/66901 , H01L29/808
摘要： A junction-field-effect-transistor (JFET) device includes a substrate of a first-type impurity, a first well region of a second-type impurity in the substrate, a pair of second well regions of the first-type impurity separated from each other in the first well region, a third well region of the first-type impurity between the pair of second well regions, a first diffused region of the second-type impurity between the third well region and one of the second well regions, and a second diffused region of the second-type impurity between the third well region and the other one of the second well regions.
摘要翻译：结场效应晶体管（JFET）器件包括第一类杂质的衬底，衬底中第二类杂质的第一阱区，第一类杂质的一对第二阱区与在第一阱区域中彼此相对的第一阱区域，第一阱区域之间的第一类型杂质的第三阱区域，第三阱区域和第二阱区域之一中的第二类型杂质的第一扩散区域，以及在第三阱区域和第二阱区域中的另一个区域之间的第二类型杂质的第二扩散区域。

5. 发明授权

US08841709B2 JFET device and method of manufacturing the same 有权
标题翻译： JFET器件及其制造方法
公开(公告)号：US08841709B2
公开(公告)日：2014-09-23
申请号：US13450373
申请日：2012-04-18
申请人： Wing Chor Chan , Chih Min Hu , Jeng Gong
发明人： Wing Chor Chan , Chih Min Hu , Jeng Gong
IPC分类号： H01L29/66
CPC分类号： H01L29/42316 , H01L29/1058 , H01L29/1075 , H01L29/808
摘要： A disclosed semiconductor device includes a semiconductor deposition layer formed over an insulation structure and above a substrate. The device includes a gate formed over a contact region between first and second implant regions in the semiconductor deposition layer. The first and second implant regions both have a first conductivity type, and the gate has a second conductivity type. The device may further include a second gate formed beneath the semiconductor deposition layer.
摘要翻译：所公开的半导体器件包括形成在绝缘结构之上和衬底之上的半导体淀积层。该器件包括形成在半导体淀积层中的第一和第二注入区域之间的接触区域上的栅极。第一和第二注入区都具有第一导电类型，栅极具有第二导电类型。器件还可以包括形成在半导体淀积层下面的第二栅极。

6. 发明授权

US08264056B2 Schottky diode 有权
标题翻译：肖特基二极管
公开(公告)号：US08264056B2
公开(公告)日：2012-09-11
申请号：US12845925
申请日：2010-07-29
申请人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
发明人： Chung Yu Hung , Chih Min Hu , Wing Chor Chan , Jeng Gong
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812
CPC分类号： H01L29/872 , H01L29/402 , H01L29/423
摘要： A Schottky diode comprises an ohmic layer that can serve as a cathode and a metal layer that can serve as an anode, and a drift channel formed of semiconductor material that extends between the ohmic and metal layers. The drift channel includes a heavily doped region adjacent to the ohmic contact layer. The drift channel forms a Schottky barrier with the metal layer. A pinch-off mechanism is provided for pinching off the drift channel while the Schottky diode is reverse-biased. As a result, the level of saturation or leakage current between the metal layer and the ohmic contact layer under a reverse bias condition of the Schottky diode is reduced.
摘要翻译：肖特基二极管包括可以用作阴极的欧姆层和可以用作阳极的金属层，以及由在欧姆层和金属层之间延伸的半导体材料形成的漂移通道。漂移沟道包括与欧姆接触层相邻的重掺杂区域。漂移通道与金属层形成肖特基势垒。在肖特基二极管反向偏置的情况下，提供夹断机构来夹紧漂移通道。结果，在肖特基二极管的反向偏置条件下，金属层与欧姆接触层之间的饱和或漏电流的电平降低。

7. 发明授权

US08698240B2 Double diffused drain metal-oxide-simiconductor devices with floating poly thereon and methods of manufacturing the same 有权
标题翻译：双扩散漏极金属氧化物半导体器件及其制造方法
公开(公告)号：US08698240B2
公开(公告)日：2014-04-15
申请号：US12786984
申请日：2010-05-25
申请人： Wing Chor Chan , Chih-Min Hu , Shyi-Yuan Wu , Jeng Gong
发明人： Wing Chor Chan , Chih-Min Hu , Shyi-Yuan Wu , Jeng Gong
IPC分类号： H01L29/78
CPC分类号： H01L29/7833 , H01L21/76232 , H01L21/823418 , H01L21/823468 , H01L21/823481 , H01L29/0847 , H01L29/402 , H01L29/423 , H01L29/66575 , H01L29/66659 , H01L29/7835
摘要： A metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate, a patterned first dielectric layer including a first dielectric portion over the diffused region, a patterned first conductive layer on the patterned first dielectric layer, the patterned first conductive layer including a first conductive portion on the first dielectric portion, a patterned second dielectric layer including a second dielectric portion that extends on a first portion of an upper surface of the first conductive portion and along a sidewall of the first conductive portion to the substrate; and a patterned second conductive layer on the patterned second dielectric layer, the patterned second conductive layer including a second conductive portion on the second dielectric portion.
摘要翻译：公开了一种金属氧化物半导体（MOS）器件。 MOS器件包括第一杂质型衬底，衬底中第二杂质型扩散区，在扩散区上方包括第一介质部分的图案化第一介电层，图案化第一介电层上的图案化第一导电层图案化的第一导电层包括在第一电介质部分上的第一导电部分，图案化的第二介电层，包括在第一导电部分的上表面的第一部分上延伸的第二电介质部分，并且沿第一导电部分的侧壁延伸部分到基底; 以及在所述图案化的第二介电层上的图案化的第二导电层，所述图案化的第二导电层包括在所述第二介电部分上的第二导电部分。

8. 发明申请

US20130015888A1 SEMICONDUCTOR DEVICE, START-UP CIRCUIT, OPERATING METHOD FOR THE SAME 有权
标题翻译：半导体器件，启动电路，其操作方法
公开(公告)号：US20130015888A1
公开(公告)日：2013-01-17
申请号：US13182966
申请日：2011-07-14
申请人： Wing-Chor Chan , Chih-Min Hu , Li-Fan Chen
发明人： Wing-Chor Chan , Chih-Min Hu , Li-Fan Chen
IPC分类号： H03B1/00
CPC分类号： H02M1/36 , H02M3/335 , Y10S323/901
摘要： A semiconductor device, a start-up circuit, and an operating method for the same are provided. The start-up circuit comprises a semiconductor unit, a first circuit, a second circuit, a voltage input terminal and a voltage output terminal. The first circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The second circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The semiconductor unit is coupled to a first node between the first circuit and the second circuit. The voltage input terminal is coupled to the semiconductor unit. The voltage output terminal is coupled to a second node between the semiconductor unit and the first circuit.
摘要翻译：提供半导体器件，启动电路及其操作方法。启动电路包括半导体单元，第一电路，第二电路，电压输入端子和电压输出端子。第一电路由串联电连接的一个二极管或多个二极管构成。第二电路由一个二极管或多个彼此串联电连接的二极管构成。半导体单元耦合到第一电路和第二电路之间的第一节点。电压输入端子耦合到半导体单元。电压输出端子耦合到半导体单元和第一电路之间的第二节点。

9. 发明申请

US20110291187A1 Double Diffused Drain Metal-Oxide-Semiconductor Devices with Floating Poly Thereon and Methods of Manufacturing The Same 有权
标题翻译：双扩散漏极金属氧化物半导体器件及其制造方法
公开(公告)号：US20110291187A1
公开(公告)日：2011-12-01
申请号：US12786984
申请日：2010-05-25
申请人： Wing Chor Chan , Chih-Min Hu , Shyi-Yuan Wu , Jeng Gong
发明人： Wing Chor Chan , Chih-Min Hu , Shyi-Yuan Wu , Jeng Gong
IPC分类号： H01L29/78
CPC分类号： H01L29/7833 , H01L21/76232 , H01L21/823418 , H01L21/823468 , H01L21/823481 , H01L29/0847 , H01L29/402 , H01L29/423 , H01L29/66575 , H01L29/66659 , H01L29/7835
摘要： A metal-oxide-semiconductor (MOS) device is disclosed. The MOS device includes a substrate of a first impurity type, a diffused region of a second impurity type in the substrate, a patterned first dielectric layer including a first dielectric portion over the diffused region, a patterned first conductive layer on the patterned first dielectric layer, the patterned first conductive layer including a first conductive portion on the first dielectric portion, a patterned second dielectric layer including a second dielectric portion that extends on a first portion of an upper surface of the first conductive portion and along a sidewall of the first conductive portion to the substrate; and a patterned second conductive layer on the patterned second dielectric layer, the patterned second conductive layer including a second conductive portion on the second dielectric portion.
摘要翻译：公开了一种金属氧化物半导体（MOS）器件。 MOS器件包括第一杂质型衬底，衬底中第二杂质型扩散区，在扩散区上方包括第一介质部分的图案化第一介电层，图案化第一介电层上的图案化第一导电层图案化的第一导电层包括在第一电介质部分上的第一导电部分，图案化的第二介电层，包括在第一导电部分的上表面的第一部分上延伸的第二电介质部分，并且沿第一导电部分的侧壁延伸部分到基底; 以及在所述图案化的第二介电层上的图案化的第二导电层，所述图案化的第二导电层包括在所述第二介电部分上的第二导电部分。

10. 发明授权

US09030855B2 Semiconductor device, start-up circuit having first and second circuits and a single voltage output terminal coupled to a second node between the semiconductor unit and the first circuit, and operating method for the same 有权
标题翻译：半导体装置，具有第一和第二电路的启动电路和耦合到半导体单元和第一电路之间的第二节点的单个电压输出端子及其相同的操作方法
公开(公告)号：US09030855B2
公开(公告)日：2015-05-12
申请号：US13182966
申请日：2011-07-14
申请人： Wing-Chor Chan , Chih-Min Hu , Li-Fan Chen
发明人： Wing-Chor Chan , Chih-Min Hu , Li-Fan Chen
IPC分类号： H02M1/00 , H02M1/36 , H02M3/335
CPC分类号： H02M1/36 , H02M3/335 , Y10S323/901
摘要： A semiconductor device, a start-up circuit, and an operating method for the same are provided. The start-up circuit comprises a semiconductor unit, a first circuit, a second circuit, a voltage input terminal and a voltage output terminal. The first circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The second circuit is constituted by one diode or a plurality of diodes electrically connected to each other in series. The semiconductor unit is coupled to a first node between the first circuit and the second circuit. The voltage input terminal is coupled to the semiconductor unit. The voltage output terminal is coupled to a second node between the semiconductor unit and the first circuit.
摘要翻译：提供半导体器件，启动电路及其操作方法。启动电路包括半导体单元，第一电路，第二电路，电压输入端子和电压输出端子。第一电路由串联电连接的一个二极管或多个二极管构成。第二电路由一个二极管或多个彼此串联电连接的二极管构成。半导体单元耦合到第一电路和第二电路之间的第一节点。电压输入端子耦合到半导体单元。电压输出端子耦合到半导体单元和第一电路之间的第二节点。

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