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    • 2. 发明申请
    • MIM capacitor structure and fabricating method thereof
    • MIM电容器结构及其制造方法
    • US20060223276A1
    • 2006-10-05
    • US10907448
    • 2005-04-01
    • Chun-Yi LinChien-Chou Hung
    • Chun-Yi LinChien-Chou Hung
    • H01L21/20
    • H01L23/5223H01L2924/0002H01L2924/00
    • A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, in which the capacitor opening is situated directly above the first damascene conductor. Next, an MIM capacitor having a top plate and a bottom plate is created within the capacitor opening, in which the bottom plate of the MIM capacitor is electrically connected to the first damascene conductor. Next, a third dielectric layer is deposited on the second dielectric layer and the MIM capacitor, and at least one second damascene conductor is formed within part of the third dielectric layer, in which the second damascene conductor is electrically connected to the top plate of the MIM capacitor.
    • 公开了一种制造MIM电容器的方法。 首先,提供其上具有第一介电层的基板。 接下来,在第一电介质层内形成至少一个第一镶嵌导体,并且在第一电介质层上形成具有电容器开口的第二电介质层,其中电容器开口位于第一镶嵌导体的正上方。 接下来,在电容器开口内形成具有顶板和底板的MIM电容器,其中MIM电容器的底板电连接到第一镶嵌导体。 接下来,在第二电介质层和MIM电容器上沉积第三电介质层,并且在第三电介质层的一部分内形成至少一个第二镶嵌导体,其中第二镶嵌导体电连接到第三电介质层的顶板 MIM电容器。
    • 4. 发明申请
    • MIM capacitor structure and fabricating method thereof
    • MIM电容器结构及其制造方法
    • US20070212845A1
    • 2007-09-13
    • US11748481
    • 2007-05-14
    • Chun-Yi LinChien-Chou Hung
    • Chun-Yi LinChien-Chou Hung
    • H01L21/20
    • H01L23/5223H01L2924/0002H01L2924/00
    • A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, in which the capacitor opening is situated directly above the first damascene conductor. Next, an MIM capacitor having a top plate and a bottom plate is created within the capacitor opening, in which the bottom plate of the MIM capacitor is electrically connected to the first damascene conductor. Next, a third dielectric layer is deposited on the second dielectric layer and the MIM capacitor, and at least one second damascene conductor is formed within part of the third dielectric layer, in which the second damascene conductor is electrically connected to the top plate of the MIM capacitor.
    • 公开了一种制造MIM电容器的方法。 首先,提供其上具有第一介电层的基板。 接下来,在第一电介质层内形成至少一个第一镶嵌导体,并且在第一电介质层上形成具有电容器开口的第二电介质层,其中电容器开口位于第一镶嵌导体的正上方。 接下来,在电容器开口内形成具有顶板和底板的MIM电容器,其中MIM电容器的底板电连接到第一镶嵌导体。 接下来,在第二电介质层和MIM电容器上沉积第三电介质层,并且在第三电介质层的一部分内形成至少一个第二镶嵌导体,其中第二镶嵌导体电连接到第三电介质层的顶板 MIM电容器。
    • 6. 发明授权
    • MIM capacitor structure and fabricating method thereof
    • MIM电容器结构及其制造方法
    • US07919802B2
    • 2011-04-05
    • US11748481
    • 2007-05-14
    • Chun-Yi LinChien-Chou Hung
    • Chun-Yi LinChien-Chou Hung
    • H01L27/108
    • H01L23/5223H01L2924/0002H01L2924/00
    • A method for fabricating an MIM capacitor is disclosed. First, a substrate is provided having a first dielectric layer thereon. Next at least one first damascene conductor is formed within the first dielectric layer, and a second dielectric layer with a capacitor opening is formed on the first dielectric layer, in which the capacitor opening is situated directly above the first damascene conductor. Next, an MIM capacitor having a top plate and a bottom plate is created within the capacitor opening, in which the bottom plate of the MIM capacitor is electrically connected to the first damascene conductor. Next, a third dielectric layer is deposited on the second dielectric layer and the MIM capacitor, and at least one second damascene conductor is formed within part of the third dielectric layer, in which the second damascene conductor is electrically connected to the top plate of the MIM capacitor.
    • 公开了一种制造MIM电容器的方法。 首先,提供其上具有第一介电层的基板。 接下来,在第一电介质层内形成至少一个第一镶嵌导体,并且在第一电介质层上形成具有电容器开口的第二电介质层,其中电容器开口位于第一镶嵌导体的正上方。 接下来,在电容器开口内形成具有顶板和底板的MIM电容器,其中MIM电容器的底板电连接到第一镶嵌导体。 接下来,在第二电介质层和MIM电容器上沉积第三电介质层,并且在第三电介质层的一部分内形成至少一个第二镶嵌导体,其中第二镶嵌导体电连接到第三电介质层的顶板 MIM电容器。