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1. 发明申请

US20150109705A1 METHOD AND ASSOCIATED APPARATUS FOR PERFORMING ELECTROSTATIC DISCHARGE PROTECTION 审中-公开
标题翻译：用于执行静电放电保护的方法和相关设备
公开(公告)号：US20150109705A1
公开(公告)日：2015-04-23
申请号：US14147606
申请日：2014-01-06
申请人： Tzu-Heng Chang , Fu-Yi Tsai , Chia-Ku Tsai
发明人： Tzu-Heng Chang , Fu-Yi Tsai , Chia-Ku Tsai
IPC分类号： H01L27/02
CPC分类号： H01L27/0266 , H01L27/0251
摘要： A method for performing electrostatic discharge (ESD) protection and an associated apparatus are provided, where the method is applied to an electronic device, and the method includes: utilizing a trigger source formed with a plurality of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) to trigger a discharge operation, where the gate and the drain of any MOSFET within the plurality of MOSFETs are electrically connected to each other, causing the MOSFET to be utilized as a two-terminal component, and the MOSFETs that are respectively utilized as two-terminal components are connected in series; and utilizing an ESD apparatus to perform the discharge operation in response to the trigger of the trigger source, in order to perform ESD protection on the apparatus.
摘要翻译：提供了一种用于执行静电放电（ESD）保护的方法和相关联的装置，其中该方法应用于电子设备，并且该方法包括：利用由多个金属氧化物半导体场效应晶体管（MOSFET）形成的触发源，以触发放电操作，其中多个MOSFET内的任何MOSFET的栅极和漏极彼此电连接，导致MOSFET用作二端子部件，并且分别用作二端子MOSFET的MOSFET，端子部件串联连接; 并且利用ESD装置响应于触发源的触发来执行放电操作，以便对该装置执行ESD保护。

2. 发明授权

US08749931B2 Electrostatic discharge protection apparatus 有权
标题翻译：静电放电保护装置
公开(公告)号：US08749931B2
公开(公告)日：2014-06-10
申请号：US13456204
申请日：2012-04-25
申请人： Fu-Yi Tsai , Chia-Ku Tsai , Yan-Hua Peng , Ming-Dou Ker
发明人： Fu-Yi Tsai , Chia-Ku Tsai , Yan-Hua Peng , Ming-Dou Ker
IPC分类号： H02H9/00 , H02H1/00 , H02H1/04 , H02H3/22 , H02H9/06
CPC分类号： H01L27/027
摘要： An electrostatic discharge (ESD) protection apparatus includes at least one first transistor and at least one second transistor. The first transistor includes a control terminal, a first terminal, a second terminal, and a bulk. The control terminal and the second terminal of the first transistor are coupled to each other. The first terminal of the first transistor is coupled to one of a pad and a power rail line. Likewise, the second transistor also includes a control terminal, a first terminal, and a second terminal. The first terminal of the second transistor is coupled to the bulk of the first transistor, the bulk of the second transistor is coupled to the second terminal of the first transistor, and the second terminal of the second transistor is coupled to the other of the pad and the power rail line.
摘要翻译：静电放电（ESD）保护装置包括至少一个第一晶体管和至少一个第二晶体管。第一晶体管包括控制端子，第一端子，第二端子和体积。第一晶体管的控制端子和第二端子彼此耦合。第一晶体管的第一端子耦合到焊盘和电力轨线之一。类似地，第二晶体管还包括控制端子，第一端子和第二端子。第二晶体管的第一端子耦合到第一晶体管的大部分，第二晶体管的主体耦合到第一晶体管的第二端子，第二晶体管的第二端子耦合到衬垫的另一个和电力线。

3. 发明申请

US20130044397A1 ESD PROTECTION CIRCUIT 有权
标题翻译： ESD保护电路
公开(公告)号：US20130044397A1
公开(公告)日：2013-02-21
申请号：US13529075
申请日：2012-06-21
申请人： Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
发明人： Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
IPC分类号： H02H9/04
CPC分类号： H02H9/046 , H01L27/0266
摘要： ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain which is coupled to the gate.
摘要翻译： ESD保护电路包括电阻器和至少一个保护晶体管; 所述电阻器耦合在I / O信号节点和内部电路的内部节点之间，所述保护晶体管串联耦合在所述内部节点和电压节点之间，每个保护晶体管包括耦合到所述栅极的栅极和漏极。

4. 发明授权

US08730634B2 ESD protection circuit 有权
标题翻译： ESD保护电路
公开(公告)号：US08730634B2
公开(公告)日：2014-05-20
申请号：US13437262
申请日：2012-04-02
申请人： Chia-Ku Tsai , Fu-Yi Tsai , Yan-Hua Peng
发明人： Chia-Ku Tsai , Fu-Yi Tsai , Yan-Hua Peng
IPC分类号： H02H3/22
CPC分类号： H02H9/046
摘要： Electrostatic discharge (ESD) protection circuit including a first silicon controlled rectifier (SCR) and a trigger circuit; the trigger circuit including a first MOS transistor and a second transistor, triggering the first SCR and providing a second SCR shunt with the first SCR during ESD.
摘要翻译：包括第一可控硅整流器（SCR）和触发电路的静电放电（ESD）保护电路; 所述触发电路包括第一MOS晶体管和第二晶体管，在ESD期间触发所述第一SCR并提供与所述第一SCR的第二SCR分流。

5. 发明申请

US20070096213A1 Electro-static discharge protection circuit 有权
标题翻译：静电放电保护电路
公开(公告)号：US20070096213A1
公开(公告)日：2007-05-03
申请号：US11454727
申请日：2006-06-16
申请人： Chia-Ku Tsai , Chung-Ti Hsu
发明人： Chia-Ku Tsai , Chung-Ti Hsu
IPC分类号： H01L23/62
CPC分类号： H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge protection circuit comprises a pad, a first transistor, a second transistor, and a diode. Wherein, the first transistor comprises the gate, a first source-drain, and a second source-drain. The first source-drain of the first transistor is electrically coupled to the pad, and the second source-drain of the first transistor is electrically coupled to a first power line. The first source-drain of the second transistor is electrically coupled to the gate of the first transistor, the second source-drain of the second transistor is electrically coupled to the first power line, and the gate of the second transistor is electrically coupled to a second power line. The diode includes a first terminal coupled to the gate of the first transistor, and a second terminal coupled to the pad. In addition, the diode and the first transistor together form a silicon controlled rectifier (SCR).
摘要翻译：静电放电保护电路包括焊盘，第一晶体管，第二晶体管和二极管。其中，第一晶体管包括栅极，第一源极 - 漏极和第二源极 - 漏极。第一晶体管的第一源极 - 漏极电耦合到焊盘，并且第一晶体管的第二源极 - 漏极电耦合到第一电力线。第二晶体管的第一源极 - 漏极电耦合到第一晶体管的栅极，第二晶体管的第二源极 - 漏极电耦合到第一电力线，并且第二晶体管的栅极电耦合到第二条电力线。二极管包括耦合到第一晶体管的栅极的第一端子和耦合到焊盘的第二端子。此外，二极管和第一晶体管一起形成可控硅整流器（SCR）。

6. 发明授权

US07538998B2 Electrostatic discharge protection circuit 有权
标题翻译：静电放电保护电路
公开(公告)号：US07538998B2
公开(公告)日：2009-05-26
申请号：US11454727
申请日：2006-06-16
申请人： Chia-Ku Tsai , Chung-Ti Hsu
发明人： Chia-Ku Tsai , Chung-Ti Hsu
IPC分类号： H02H3/22
CPC分类号： H01L27/0262 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge protection circuit comprises a pad, a first transistor, a second transistor, and a diode. Wherein, the first transistor comprises the gate, a first source-drain, and a second source-drain. The first source-drain of the first transistor is electrically coupled to the pad, and the second source-drain of the first transistor is electrically coupled to a first power line. The first source-drain of the second transistor is electrically coupled to the gate of the first transistor, the second source-drain of the second transistor is electrically coupled to the first power line, and the gate of the second transistor is electrically coupled to a second power line. The diode includes a first terminal coupled to the gate of the first transistor, and a second terminal coupled to the pad. In addition, the diode and the first transistor together form a silicon controlled rectifier (SCR).
摘要翻译：静电放电保护电路包括焊盘，第一晶体管，第二晶体管和二极管。其中，第一晶体管包括栅极，第一源极 - 漏极和第二源极 - 漏极。第一晶体管的第一源极 - 漏极电耦合到焊盘，并且第一晶体管的第二源极 - 漏极电耦合到第一电力线。第二晶体管的第一源极 - 漏极电耦合到第一晶体管的栅极，第二晶体管的第二源极 - 漏极电耦合到第一电力线，并且第二晶体管的栅极电耦合到第二条电力线。二极管包括耦合到第一晶体管的栅极的第一端子和耦合到焊盘的第二端子。此外，二极管和第一晶体管一起形成可控硅整流器（SCR）。

7. 发明授权

US08743517B2 ESD protection circuit 有权
标题翻译： ESD保护电路
公开(公告)号：US08743517B2
公开(公告)日：2014-06-03
申请号：US13529075
申请日：2012-06-21
申请人： Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
发明人： Fu-Yi Tsai , Yan-Hua Peng , Chia-Ku Tsai , Ming-Dou Ker
IPC分类号： H02H3/22
CPC分类号： H02H9/046 , H01L27/0266
摘要： ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain which is coupled to the gate.
摘要翻译： ESD保护电路包括电阻器和至少一个保护晶体管; 所述电阻器耦合在I / O信号节点和内部电路的内部节点之间，所述保护晶体管串联耦合在所述内部节点和电压节点之间，每个保护晶体管包括耦合到所述栅极的栅极和漏极。

8. 发明申请

US20130088801A1 ELECTROSTATIC DISCHARGE PROTECTION APPARATUS 有权
标题翻译：静电放电保护装置
公开(公告)号：US20130088801A1
公开(公告)日：2013-04-11
申请号：US13456204
申请日：2012-04-25
申请人： Fu-Yi Tsai , Chia-Ku Tsai , Yan-Hua Peng , Ming-Dou Ker
发明人： Fu-Yi Tsai , Chia-Ku Tsai , Yan-Hua Peng , Ming-Dou Ker
IPC分类号： H02H9/04
CPC分类号： H01L27/027
摘要： An electrostatic discharge (ESD) protection apparatus includes at least one first transistor and at least one second transistor. The first transistor includes a control terminal, a first terminal, a second terminal, and a bulk. The control terminal and the second terminal of the first transistor are coupled to each other. The first terminal of the first transistor is coupled to one of a pad and a power rail line. Likewise, the second transistor also includes a control terminal, a first terminal, and a second terminal. The first terminal of the second transistor is coupled to the bulk of the first transistor, the bulk of the second transistor is coupled to the second terminal of the first transistor, and the second terminal of the second transistor is coupled to the other of the pad and the power rail line.
摘要翻译：静电放电（ESD）保护装置包括至少一个第一晶体管和至少一个第二晶体管。第一晶体管包括控制端子，第一端子，第二端子和体积。第一晶体管的控制端子和第二端子彼此耦合。第一晶体管的第一端子耦合到焊盘和电力轨线之一。类似地，第二晶体管还包括控制端子，第一端子和第二端子。第二晶体管的第一端子耦合到第一晶体管的大部分，第二晶体管的主体耦合到第一晶体管的第二端子，而第二晶体管的第二端子耦合到衬垫的另一个和电力线。

9. 发明申请

US20120275073A1 ESD PROTECTION CIRCUIT 有权
标题翻译： ESD保护电路
公开(公告)号：US20120275073A1
公开(公告)日：2012-11-01
申请号：US13437262
申请日：2012-04-02
申请人： Chia-Ku Tsai , Fu-Yi Tsai , Yan-Hua Peng
发明人： Chia-Ku Tsai , Fu-Yi Tsai , Yan-Hua Peng
IPC分类号： H02H9/00
CPC分类号： H02H9/046
摘要： Electrostatic discharge (ESD) protection circuit including a first silicon controlled rectifier (SCR) and a trigger circuit; the trigger circuit including a first MOS transistor and a second transistor, triggering the first SCR and providing a second SCR shunt with the first SCR during ESD.
摘要翻译：包含第一可控硅整流器（SCR）和触发电路的静电放电（ESD）保护电路; 所述触发电路包括第一MOS晶体管和第二晶体管，在ESD期间触发所述第一SCR并提供与所述第一SCR的第二SCR分流。

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