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1. 发明授权

US08665651B1 Reference cell circuit and method of producing a reference current 有权
标题翻译：参考电路和产生参考电流的方法
公开(公告)号：US08665651B1
公开(公告)日：2014-03-04
申请号：US13610448
申请日：2012-09-11
申请人： Chi-Shun Lin , Seow-Fong Lim , Ming-Huei Shieh
发明人： Chi-Shun Lin , Seow-Fong Lim , Ming-Huei Shieh
IPC分类号： G11C11/34 , G11C16/06 , G11C7/00 , G11C7/02
CPC分类号： G11C7/14 , G11C5/147 , G11C16/28
摘要： The present invention discloses a reference cell circuit which is applied to a non-volatile memory. The reference cell circuit includes a reference cell array, a first current mirror circuit, and a second current mirror circuit. The reference cell array includes at least one row of floating gate transistors. The first current mirror circuit is arranged to generate a mirror current according to a reference current generated by the reference cell array. The second current mirror circuit is arranged to receive the mirror current and generate an adjusted reference current according to the mirror current and a selected one of a plurality of enable signals, wherein the plurality of enable signals correspond to a plurality operations of the non-volatile memory and the adjusted reference current is arranged to determine logical state of a plurality of memory cells of the non-volatile memory.
摘要翻译：本发明公开了一种应用于非易失性存储器的参考单元电路。参考单元电路包括参考单元阵列，第一电流镜电路和第二电流镜电路。参考单元阵列包括至少一行浮置栅极晶体管。第一电流镜电路被布置成根据由参考单元阵列产生的参考电流产生镜电流。第二电流镜电路被布置成接收反射镜电流并且根据镜电流和多个使能信号中的选定一个产生调整的参考电流，其中多个使能信号对应于非易失性的多个操作存储器和经调整的参考电流被布置成确定非易失性存储器的多个存储单元的逻辑状态。

2. 发明申请

US20140071766A1 REFERENCE CELL CIRCUIT AND METHOD OF PRODUCING A REFERENCE CURRENT 有权
标题翻译：参考电路和产生参考电流的方法
公开(公告)号：US20140071766A1
公开(公告)日：2014-03-13
申请号：US13610448
申请日：2012-09-11
申请人： Chi-Shun LIN , Seow-Fong LIM , Ming-Huei SHIEH
发明人： Chi-Shun LIN , Seow-Fong LIM , Ming-Huei SHIEH
IPC分类号： G11C16/06
CPC分类号： G11C7/14 , G11C5/147 , G11C16/28
摘要： The present invention discloses a reference cell circuit which is applied to a non-volatile memory. The reference cell circuit includes a reference cell array, a first current mirror circuit, and a second current mirror circuit. The reference cell array includes at least one row of floating gate transistors. The first current mirror circuit is arranged to generate a mirror current according to a reference current generated by the reference cell array. The second current mirror circuit is arranged to receive the mirror current and generate an adjusted reference current according to the mirror current and a selected one of a plurality of enable signals, wherein the plurality of enable signals correspond to a plurality operations of the non-volatile memory and the adjusted reference current is arranged to determine logical state of a plurality of memory cells of the non-volatile memory.
摘要翻译：本发明公开了一种应用于非易失性存储器的参考单元电路。参考单元电路包括参考单元阵列，第一电流镜电路和第二电流镜电路。参考单元阵列包括至少一行浮置栅极晶体管。第一电流镜电路被布置成根据由参考单元阵列产生的参考电流产生镜电流。第二电流镜电路被布置成接收反射镜电流并且根据镜电流和多个使能信号中的选定一个产生调整的参考电流，其中多个使能信号对应于非易失性的多个操作存储器和经调整的参考电流被布置成确定非易失性存储器的多个存储单元的逻辑状态。

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