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1. 发明授权

US07432564B2 Pixel structure 有权
标题翻译：像素结构
公开(公告)号：US07432564B2
公开(公告)日：2008-10-07
申请号：US11960737
申请日：2007-12-20
申请人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
发明人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
IPC分类号： H01L29/78
CPC分类号： G02F1/1362 , G02F1/13458
摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上形成栅极，扫描线和第一端子。栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

2. 发明申请

US20080128700A1 PIXEL STRUCTURE 有权
标题翻译：像素结构
公开(公告)号：US20080128700A1
公开(公告)日：2008-06-05
申请号：US11960737
申请日：2007-12-20
申请人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
发明人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
IPC分类号： H01L29/04
CPC分类号： G02F1/1362 , G02F1/13458
摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上形成栅极，扫描线和第一端子。栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

3. 发明授权

US07338846B2 Fabricating method of pixel structure 有权
标题翻译：像素结构的制作方法
公开(公告)号：US07338846B2
公开(公告)日：2008-03-04
申请号：US11306814
申请日：2006-01-12
申请人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
发明人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
IPC分类号： H01L21/84
CPC分类号： G02F1/1362 , G02F1/13458
摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上形成栅极，扫描线和第一端子。栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

4. 发明申请

US20070161136A1 PIXEL STRUCTURE AND THE FABRICATING METHOD THEREOF 有权
标题翻译：像素结构及其制作方法
公开(公告)号：US20070161136A1
公开(公告)日：2007-07-12
申请号：US11306814
申请日：2006-01-12
申请人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
发明人： Ta-Jung Su , Yea-Chung Shih , Cheng-Fang Su
IPC分类号： H01L21/00
CPC分类号： G02F1/1362 , G02F1/13458
摘要： A method for fabricating a pixel structure is provided. First, a gate, a scan line, and a first terminal are formed on a substrate. A gate insulating layer is formed over the substrate to cover the gate, the scan line, and the first terminal. After defining the semiconductor layer, the gate insulating layer is patterned to exposure the first terminal. A transparent conductive layer is formed over the substrate and a patterned photoresist layer is formed on the transparent conductive layer. The transparent conductive layer is patterned using the patterned photoresist layer as a mask, so as to define a source, a drain, a data line, a pixel electrode, a second terminal, and a contact pad. Because only four photomasks are used to implement the above method for fabricating the pixel structure, the cost of manufacturing can be reduced.
摘要翻译：提供了一种用于制造像素结构的方法。首先，在基板上形成栅极，扫描线和第一端子。栅极绝缘层形成在衬底上以覆盖栅极，扫描线和第一端子。在限定半导体层之后，栅极绝缘层被图案化以暴露第一端子。在衬底上形成透明导电层，并且在透明导电层上形成图案化的光致抗蚀剂层。使用图案化的光致抗蚀剂层作为掩模来图案化透明导电层，以便限定源极，漏极，数据线，像素电极，第二端子和接触焊盘。由于仅使用四个光掩模来实现用于制造像素结构的上述方法，所以可以降低制造成本。

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