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1. 发明授权

US06258634B1 Method for manufacturing a dual-direction over-voltage and over-current IC protection device and its cell structure 有权
标题翻译：制造双向过电压和过流IC保护装置及其电池结构的方法
公开(公告)号：US06258634B1
公开(公告)日：2001-07-10
申请号：US09246035
申请日：1999-02-04
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H01L21332
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD protection structure, one of the inherent n-p-n-p thyristors is triggered into a snap-back mode thereby to form a low impedance path to discharge the ESD current. Some embodiments of the ESD protection structure of the present invention have an enhanced current handling capability and are formed by combining a number of standard cells. The standard cells include a corner cell, a center cell and an edge cell which are arranged adjacent each other to form an ESD protection structure which provides for current flow from across many locations therein. Some embodiments of the ESD protection structure of the present invention include a network consisting of a pair of current sources, e.g. back-to-back zener diodes, each connected in series with a resistor to control the trigger voltage of the ESD protection structure.
摘要翻译：由相邻的p-n-p-n-p半导体区域的交替布置形成的两端ESD保护结构提供了抵抗正和负ESD脉冲的保护。当ESD保护结构的两个端子出现ESD脉冲时，其中一个固有的n-p-n-p晶闸管被触发成快速恢复模式，从而形成一个低阻抗路径来放电ESD电流。本发明的ESD保护结构的一些实施例具有增强的电流处理能力，并且通过组合多个标准单元而形成。标准单元包括彼此相邻布置的角电池，中心电池和边缘电池，以形成ESD保护结构，其提供来自其中许多位置的电流。本发明的ESD保护结构的一些实施例包括由一对电流源组成的网络，例如，背对背齐纳二极管，每个二极管与电阻串联连接，以控制ESD保护结构的触发电压。

2. 发明授权

US07327541B1 Operation of dual-directional electrostatic discharge protection device 有权
标题翻译：双向静电放电保护装置的运行
公开(公告)号：US07327541B1
公开(公告)日：2008-02-05
申请号：US10873031
申请日：2004-06-22
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H02H9/00 , H02H3/00 , H01L29/74 , H01L23/62 , H01L21/332
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semiconductor region electrically floats. When the two terminals (A and K) of the ESD protection structure are subjected to an ESD voltage, the structure goes into operation by triggering one of its two inherent thyristors (170 and 180) into a snap-back mode that provides a low impedance path through the structure for discharging the ESD current.
摘要翻译：由交替导电类型的五个相邻半导体区域（112,114,116,118和120）的布置形成的双端子ESD保护结构提供抵抗正和负ESD电压的保护。中间半导体区域电浮动。当ESD保护结构的两个端子（A和K）受到ESD电压的影响时，通过将其两个固有晶闸管（170和180）中的一个触发成一个提供低阻抗通过用于放电ESD电流的结构的路径。

3. 发明授权

US08305722B2 Dual-directional electrostatic discharge protection method 有权
公开(公告)号：US08305722B2
公开(公告)日：2012-11-06
申请号：US13073990
申请日：2011-03-28
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H02H9/00 , H02H3/00 , H01L29/74 , H01L23/62 , H01L21/332
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD protection structure, one of the inherent n-p-n-p thyristors is triggered into a snap-back mode thereby to form a low impedance path to discharge the ESD current.Some embodiments of the ESD protection structure of the present invention have an enhanced current handling capability and are formed by combining a number of standard cells. The standard cells include a corner cell, a center cell and an edge cell which are arranged adjacent each other to form an ESD protection structure which provides for current flow from across many locations therein.Some embodiments of the ESD protection structure of the present invention include a network consisting of a pair of current sources, e.g. back-to-back zener diodes, each connected in series with a resistor to control the trigger voltage of the ESD protection structure.

4. 发明授权

US06365924B1 Dual direction over-voltage and over-current IC protection device and its cell structure 失效
标题翻译：双向过电压和过流IC保护装置及其电池结构
公开(公告)号：US06365924B1
公开(公告)日：2002-04-02
申请号：US09100384
申请日：1998-06-19
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H01L2974
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD protection structure, one of the inherent n-p-n-p thyristors is triggered into a snap-back mode thereby to form a low impedance path to discharge the ESD current. Some embodiments of the ESD protection structure of the present invention have an enhanced current handling capability and are formed by combining a number of standard cells. The standard cells include a corner cell, a center cell and an edge cell which are arranged adjacent each other to form an ESD protection structure which provides for current flow from across many locations therein. Some embodiments of the ESD protection structure of the present invention include a network consisting of a pair of current sources, e.g. back-to-back zener diodes, each connected in series with a resistor to control the trigger voltage of the ESD protection structure.
摘要翻译：由相邻的p-n-p-n-p半导体区域的交替布置形成的两端ESD保护结构提供了抵抗正和负ESD脉冲的保护。当在ESD保护结构的两个端子之间出现ESD脉冲时，其中一个固有的npnp晶闸管被触发成快速恢复模式，从而形成一个低阻抗路径以放电ESD电流。ESD保护结构的一些实施例本发明具有增强的电流处理能力，并且通过组合多个标准单元而形成。标准单元包括彼此相邻布置的角电池，中心电池和边缘电池，以形成ESD保护结构，其提供来自其中许多位置的电流。本发明的ESD保护结构的一些实施例包括由一对电流源组成的网络，例如背对背齐纳二极管，每个二极管与电阻串联连接，以控制ESD保护结构的触发电压。

5. 发明申请

US20120182659A1 Dual-directional electrostatic discharge protection method 有权
标题翻译：双向静电放电保护方法
公开(公告)号：US20120182659A1
公开(公告)日：2012-07-19
申请号：US13073990
申请日：2011-03-28
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H02H3/20
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two terminal ESD protection structure formed by an alternating arrangement of adjacent p-n-p-n-p semiconductor regions provides protection against both positive and negative ESD pulses. When an ESD pulse appears across the two terminals of the ESD protection structure, one of the inherent n-p-n-p thyristors is triggered into a snap-back mode thereby to form a low impedance path to discharge the ESD current.Some embodiments of the ESD protection structure of the present invention have an enhanced current handling capability and are formed by combining a number of standard cells. The standard cells include a corner cell, a center cell and an edge cell which are arranged adjacent each other to form an ESD protection structure which provides for current flow from across many locations therein.Some embodiments of the ESD protection structure of the present invention include a network consisting of a pair of current sources, e.g. back-to-back zener diodes, each connected in series with a resistor to control the trigger voltage of the ESD protection structure.
摘要翻译：由相邻的p-n-p-n-p半导体区域的交替布置形成的两端ESD保护结构提供了抵抗正和负ESD脉冲的保护。当ESD保护结构的两个端子出现ESD脉冲时，其中一个固有的n-p-n-p晶闸管被触发成快速恢复模式，从而形成一个低阻抗路径来放电ESD电流。本发明的ESD保护结构的一些实施例具有增强的电流处理能力，并且通过组合多个标准单元而形成。标准单元包括彼此相邻布置的角电池，中心电池和边缘电池，以形成ESD保护结构，其提供来自其中许多位置的电流。本发明的ESD保护结构的一些实施例包括由一对电流源组成的网络，例如，背对背齐纳二极管，每个二极管与电阻串联连接，以控制ESD保护结构的触发电压。

6. 发明授权

US07936020B1 Dual-directional electrostatic discharge protection device 有权
标题翻译：双向静电放电保护装置
公开(公告)号：US07936020B1
公开(公告)日：2011-05-03
申请号：US11890167
申请日：2007-08-02
申请人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
发明人： Albert Z. H. Wang , Chen H. Tsay , Peter Deane
IPC分类号： H01L23/62 , H01L29/74 , H01L31/111
CPC分类号： H01L27/0262 , H01L29/0692 , H01L29/87
摘要： A two-terminal ESD protection structure formed by an arrangement of five adjacent semiconductor regions (112, 114, 116, 118, and 120) of alternating conductivity type provides protection against both positive and negative ESD voltages. The middle semiconductor region electrically floats. When the two terminals (A and K) of the ESD protection structure are subjected to an ESD voltage, the structure goes into operation by triggering one of its two inherent thyristors (170 and 180) into a snap-back mode that provides a low impedance path through the structure for discharging the ESD current.
摘要翻译：由交替导电类型的五个相邻半导体区域（112,114,116,118和120）的布置形成的双端子ESD保护结构提供抵抗正和负ESD电压的保护。中间半导体区域电浮动。当ESD保护结构的两个端子（A和K）受到ESD电压的影响时，通过将其两个固有晶闸管（170和180）中的一个触发成一个提供低阻抗通过用于放电ESD电流的结构的路径。

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