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1. 发明申请

US20100139692A1 IMMERSIVE OXIDATION AND ETCHING PROCESS FOR CLEANING SILICON ELECTRODES 有权
标题翻译：用于清洁硅电极的强力氧化和蚀刻工艺
公开(公告)号：US20100139692A1
公开(公告)日：2010-06-10
申请号：US12635167
申请日：2009-12-10
申请人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： C23G1/02
CPC分类号： B24B41/06 , B08B3/08 , B08B3/12 , C11D7/08 , C11D7/261 , C11D7/265 , C11D11/0047
摘要： A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.
摘要翻译：提供一种用于清洁硅电极的方法，其中硅电极浸泡在搅拌的洗涤剂水溶液中，并在从洗涤剂水溶液中除去后用水冲洗。然后将冲洗的硅电极浸泡在搅拌的异丙醇（IPA）溶液中并漂洗。然后在从IPA溶液中除去之后，将硅电极进行超声波清洗操作。然后通过将硅电极浸入包含氢氟酸，硝酸，乙酸和水的搅拌的混合酸溶液中从硅电极中除去污染物。在从混合酸溶液中除去之后，对硅电极进行附加的超声波清洗操作，随后漂洗并干燥。在本公开的其它实施例中，预期硅电极可以浸泡在搅拌的含水洗涤剂溶液，搅拌的异丙醇（IPA）溶液中或两者中。额外的实施例被设想，公开和要求保护。

2. 发明申请

US20080092920A1 Methods and apparatus for wet cleaning electrode assemblies for plasma processing apparatuses 有权
标题翻译：用于等离子体处理装置的湿式清洁电极组件的方法和装置
公开(公告)号：US20080092920A1
公开(公告)日：2008-04-24
申请号：US11640975
申请日：2006-12-19
申请人： Hong Shih , Yaobo Yin , Jason Augustino , Catherine Zhou , Armen Avoyan
发明人： Hong Shih , Yaobo Yin , Jason Augustino , Catherine Zhou , Armen Avoyan
IPC分类号： B08B3/12
CPC分类号： C23C16/4407 , B08B1/00 , B08B3/02 , B08B3/12
摘要： Methods of cleaning backing plates of electrode assemblies, or electrode assemblies including a backing plate and an electrode plate are provided. The methods can be used to clean backing plates and electrode plates made of various materials, such as silicon electrode plates and graphite and aluminum backing plates. The backing plates and electrode assemblies can be new, used or refurbished. A flushing fixture that can be used in the cleaning methods is also provided.
摘要翻译：提供了清洁电极组件的背板或包括背板和电极板的电极组件的方法。该方法可用于清洁由各种材料制成的背板和电极板，例如硅电极板和石墨和铝背板。背板和电极组件可以是新的，使用的或翻新的。还提供了可用于清洁方法的冲洗夹具。

3. 发明授权

US07052553B1 Wet cleaning of electrostatic chucks 有权
标题翻译：湿式清洁静电卡盘
公开(公告)号：US07052553B1
公开(公告)日：2006-05-30
申请号：US11000388
申请日：2004-12-01
申请人： Hong Shih , Tuochuan Huang , Catherine Zhou , Bruno Morel , Brian McMillin , Paul Mulgrew , Armen Avoyan
发明人： Hong Shih , Tuochuan Huang , Catherine Zhou , Bruno Morel , Brian McMillin , Paul Mulgrew , Armen Avoyan
IPC分类号： B08B6/00
CPC分类号： H01L21/6831 , B08B3/12 , H01L21/6704
摘要： A non-destructive and simple method for cleaning a new or used electrostatic chuck comprises a wet cleaning process, which removes contaminants deposited on a surface of the electrostatic chuck.
摘要翻译：用于清洁新的或使用过的静电卡盘的非破坏性和简单的方法包括湿式清洁工艺，其去除沉积在静电卡盘的表面上的污染物。

4. 发明授权

US08580079B2 Electrode carrier assemblies 有权
标题翻译：电极载体组件
公开(公告)号：US08580079B2
公开(公告)日：2013-11-12
申请号：US12817699
申请日：2010-06-17
申请人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： H01J1/94
CPC分类号： H01J37/32532 , H01J37/32431
摘要： In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position.
摘要翻译：根据本公开的一个实施例，提供了一种电极载体组件，其包括承载环的电极和多个电极安装构件。承载电极的电极包括形成电极承载环的内部或外部半径的电极容纳侧壁。承载电极的电极还包括多个径向侧壁突起，其径向突出远离电极容纳侧壁。径向侧壁突起各自包括面向上的微型台面的向上的锥形间隔件。电极安装构件各自包括面向下的微型台面的朝下的锥形间隔件。电极安装构件可旋转地与电极承载环形接合，并且构造成在空闲位置和支架位置之间旋转。

5. 发明授权

US08550880B2 Platen and adapter assemblies for facilitating silicon electrode polishing 有权
标题翻译：用于促进硅电极抛光的压板和适配器组件
公开(公告)号：US08550880B2
公开(公告)日：2013-10-08
申请号：US12635175
申请日：2009-12-10
申请人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： B24B41/06 , B24B1/00
CPC分类号： B24B41/06 , B08B3/08 , B08B3/12 , C11D7/08 , C11D7/261 , C11D7/265 , C11D11/0047
摘要： A process is provided for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen. The dual function electrode platen is secured to the polishing turntable and comprises a plurality of electrode mounts arranged to project from an electrode engaging face of the dual function electrode platen. The electrode mounts complement respective positions of mount receptacles formed in a platen engaging face of the silicon electrode to be polished. The electrode mounts and the mount receptacles are configured to permit non-destructive engagement and disengagement of the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode. The dual function electrode platen further comprises platen adapter abutments positioned radially inward of the electrode mounts. The platen adapter abutments are configured to bring a platen adapter into approximate alignment with the rotary polishing axis. The silicon electrode is polished by (i) engaging the electrode engaging face of the electrode platen and the platen engaging face of the silicon electrode via the electrode mounts and mount receptacles, (ii) utilizing the polishing turntable to impart rotary motion to the engaged silicon electrode, and (iii) contacting an exposed face of the silicon electrode with a polishing surface as the silicon electrode rotates about the rotary polishing axis. Additional embodiments are contemplated, disclosed and claimed.
摘要翻译：提供了利用抛光转台和双功能电极压板来抛光硅电极的工艺。双功能电极台板被固定在抛光转台上，并且包括多个电极安装件，布置成从双功能电极压板的电极接合面突出。电极安装件补充形成在待抛光的硅电极的压板接合面中的安装插座的相应位置。电极安装件和安装座被构造成允许电极压板的电极接合面和硅电极的压板接合面的非破坏性接合和分离。双功能电极台板还包括位于电极座的径向内侧的压板适配器支座。压板适配器支座构造成使压板适配器与旋转抛光轴线大致对准。通过（i）经由电极安装件和安装座接合电极台板的电极接合面和硅电极的台板接合面来研磨硅电极，（ii）利用抛光转台将旋转运动传递到接合的硅电极，以及（iii）当硅电极围绕旋转抛光轴线旋转时，使硅电极的暴露面与抛光表面接触。预期，公开和要求保护附加实施例。

6. 发明授权

US08444456B2 Electrode securing platens and electrode polishing assemblies incorporating the same 有权
标题翻译：电极固定压板和电极抛光组件
公开(公告)号：US08444456B2
公开(公告)日：2013-05-21
申请号：US12917794
申请日：2010-11-02
申请人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： H01L21/304 , H01J1/88
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定压板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的方差消除肩部，从变形消除肩部延伸的螺纹压板夹持部分和与螺纹压板夹持部分接合的螺纹螺母。电极定位紧固件将电极固定压板夹在螺母和电极间隔肩之间。方差消除肩部至少部分地在电极固定台板的多个方差消除通路之一内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

7. 发明申请

US20120108152A1 Electrode Securing Platens And Electrode Polishing Assemblies Incorporating The Same 有权
标题翻译：电极固定压板和电极抛光组件结合在一起
公开(公告)号：US20120108152A1
公开(公告)日：2012-05-03
申请号：US12917794
申请日：2010-11-02
申请人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： B24B41/06
CPC分类号： B24B37/30 , B24B41/061
摘要： In one embodiment, an electrode polishing assembly may include an electrode securing platen, a plurality of electrode locating fasteners, and an electrode. Each of the electrode locating fasteners may include an electrode spacing shoulder, a variance cancelling shoulder extending from the electrode spacing shoulder, a threaded platen clamping portion extending from the variance cancelling shoulder, and a threaded nut that engages the threaded platen clamping portion. The electrode locating fasteners clamp the electrode securing platen between the threaded nut and the electrode spacing shoulder. The variance cancelling shoulder is at least partially within one of a plurality of variance cancelling passages of the electrode securing platen. A minimum position stack-up is equal to a minimum passage size minus a maximum shoulder size. A maximum position stack-up is equal to a maximum passage size minus a minimum shoulder size. The maximum position stack-up is greater than the minimum position stack-up.
摘要翻译：在一个实施例中，电极抛光组件可以包括电极固定压板，多个电极定位紧固件和电极。每个电极定位紧固件可以包括电极间隔肩部，从电极间隔肩部延伸的方差消除肩部，从变形消除肩部延伸的螺纹压板夹持部分和与螺纹压板夹持部分接合的螺纹螺母。电极定位紧固件将电极固定压板夹在螺母和电极间隔肩之间。方差消除肩部至少部分地在电极固定台板的多个方差消除通路之一内。最小位置叠加等于最小通道尺寸减去最大肩部尺寸。最大位置叠加等于最大通道尺寸减去最小肩部尺寸。最大位置叠加大于最小位置叠加。

8. 发明申请

US20110308732A1 Electrode Carrier Assemblies 有权
标题翻译：电极载体组件
公开(公告)号：US20110308732A1
公开(公告)日：2011-12-22
申请号：US12817699
申请日：2010-06-17
申请人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Cliff La Croix , Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： H01J1/94
CPC分类号： H01J37/32532 , H01J37/32431
摘要： In accordance with one embodiment of the present disclosure, an electrode carrier assembly is provided including an electrode carrying annulus and a plurality of electrode mounting members. The electrode carrying annulus includes an electrode containment sidewall that forms an inner or outer radius of the electrode carrying annulus. The electrode carrying annulus further includes a plurality of radial sidewall projections that project radially away from the electrode containment sidewall. The radial sidewall projections each include an upward-facing tapered spacer including an upward-facing micro-mesa. The electrode mounting members each include a downward-facing tapered spacer including a downward-facing micro-mesa. The electrode mounting members are rotatably engaged with the electrode carrying annulus, and are configured to rotate between a free position and a bracketed position.
摘要翻译：根据本公开的一个实施例，提供了一种电极载体组件，其包括承载环的电极和多个电极安装构件。承载电极的电极包括形成电极承载环的内部或外部半径的电极容纳侧壁。承载电极的电极还包括多个径向侧壁突起，其径向突出远离电极容纳侧壁。径向侧壁突起各自包括面向上的微型台面的向上的锥形间隔件。电极安装构件各自包括面向下的微型台面的朝下的锥形间隔件。电极安装构件可旋转地与电极承载环形接合，并且构造成在空闲位置和支架位置之间旋转。

9. 发明授权

US08075703B2 Immersive oxidation and etching process for cleaning silicon electrodes 有权
标题翻译：沉积氧化和蚀刻工艺，用于清洁硅电极
公开(公告)号：US08075703B2
公开(公告)日：2011-12-13
申请号：US12635167
申请日：2009-12-10
申请人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
发明人： Armen Avoyan , Duane Outka , Catherine Zhou , Hong Shih
IPC分类号： B08B3/12 , B08B3/08 , B08B3/04
CPC分类号： B24B41/06 , B08B3/08 , B08B3/12 , C11D7/08 , C11D7/261 , C11D7/265 , C11D11/0047
摘要： A process for cleaning a silicon electrode is provided where the silicon electrode is soaked in an agitated aqueous detergent solution and rinsed with water following removal from the aqueous detergent solution. The rinsed silicon electrode is then soaked in an agitated isopropyl alcohol (IPA) solution and rinsed. The silicon electrode is then subjected to an ultrasonic cleaning operation in water following removal from the IPA solution. Contaminants are then removed from the silicon electrode by soaking the silicon electrode in an agitated mixed acid solution comprising hydrofluoric acid, nitric acid, acetic acid, and water. The silicon electrode is subjected to an additional ultrasonic cleaning operation following removal from the mixed acid solution and is subsequently rinsed and dried. In other embodiments of the present disclosure, it is contemplated that the silicon electrode can be soaked in either the agitated aqueous detergent solution, the agitated isopropyl alcohol (IPA) solution, or both. Additional embodiments are contemplated, disclosed, and claimed.
摘要翻译：提供一种用于清洁硅电极的方法，其中硅电极浸泡在搅拌的洗涤剂水溶液中，并在从洗涤剂水溶液中除去后用水冲洗。然后将冲洗的硅电极浸泡在搅拌的异丙醇（IPA）溶液中并漂洗。然后在从IPA溶液中除去之后，将硅电极进行超声波清洗操作。然后通过将硅电极浸入包含氢氟酸，硝酸，乙酸和水的搅拌的混合酸溶液中从硅电极中除去污染物。在从混合酸溶液中除去之后，对硅电极进行附加的超声波清洗操作，随后漂洗并干燥。在本公开的其它实施例中，预期硅电极可以浸泡在搅拌的含水洗涤剂溶液，搅拌的异丙醇（IPA）溶液中或两者中。额外的实施例被设想，公开和要求保护。

10. 发明申请

US20060138081A1 Methods for silicon electrode assembly etch rate and etch uniformity recovery 有权
标题翻译：硅电极组件蚀刻速率和蚀刻均匀性恢复方法
公开(公告)号：US20060138081A1
公开(公告)日：2006-06-29
申请号：US11019729
申请日：2004-12-23
申请人： Tuochuan Huang , Daxing Ren , Hong Shih , Catherine Zhou , Chun Yan , Enrico Magni , Bi Yen , Jerome Hubacek , Dae Lim , Dougyong Sung
发明人： Tuochuan Huang , Daxing Ren , Hong Shih , Catherine Zhou , Chun Yan , Enrico Magni , Bi Yen , Jerome Hubacek , Dae Lim , Dougyong Sung
IPC分类号： B44C1/22 , C23F1/00
CPC分类号： H01L21/67069 , B08B3/10 , B08B3/12 , B24C1/003 , H01J37/32605
摘要： Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.
摘要翻译：用于清洁电极组件的方法，其可以用于在清洁之后蚀刻等离子体蚀刻室中的电介质材料，包括抛光电极组件的硅表面，优选从其中去除黑色硅污染物。

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