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1. 发明申请

US20160284918A1 PHOTOVOLTAIC ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：光伏元件及其制造方法
公开(公告)号：US20160284918A1
公开(公告)日：2016-09-29
申请号：US14777788
申请日：2014-03-18
申请人： CHOSHU INDUSTRY CO., LTD.
发明人： Eiji KOBAYASHI
IPC分类号： H01L31/0747 , H01L31/20
CPC分类号： H01L31/0747 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： Provided are a photo-electric power generating element having a sufficient fill factor, and enabling a manufacturing cost to be reduced, and a manufacturing method therefor. A photo-electric power generating element 10 including: an n-type crystal semiconductor substrate 11; a p-type amorphous silicon thin film 13 overlaid on one face side of the n-type crystal semiconductor substrate 11; and an n-type amorphous silicon thin film 15 overlaid on another face side of the n-type crystal semiconductor substrate 11, in which the photo-electric power generating element 10 further includes an intrinsic amorphous silicon thin film 12 interposed between the n-type crystal semiconductor substrate 11 and the p-type amorphous silicon thin film 13, the n-type crystal semiconductor substrate 11 and the n-type amorphous silicon thin film 15 are directly bonded, and a side on which the n-type amorphous silicon thin film 15 is provided is used as a plane of light incidence.
摘要翻译：提供了具有足够的填充因子并且能够降低制造成本的光电发生元件及其制造方法。一种光电发生元件10，包括：n型晶体半导体衬底11; 覆盖在n型晶体半导体衬底11的一个正面侧的p型非晶硅薄膜13; 以及重叠在n型晶体半导体基板11的另一面侧的n型非晶硅薄膜15，其中光电发生元件10还包括介于n型晶体半导体衬底11之间的本征非晶硅薄膜12。晶体半导体衬底11和p型非晶硅薄膜13，n型晶体半导体衬底11和n型非晶硅薄膜15直接接合，并且在其一侧上具有n型非晶硅薄膜 15被提供用作光入射平面。

2. 发明申请

US20160284895A1 PHOTOVOLTAIC APPARATUS 审中-公开
标题翻译：光伏设备
公开(公告)号：US20160284895A1
公开(公告)日：2016-09-29
申请号：US14442291
申请日：2013-11-19
申请人： CHOSHU INDUSTRY CO., LTD. , NAMICS CORPORATION
发明人： Kimikazu HASHIMOTO , Masazumi OUCHI , Koji SAKAMOTO , Kazuo MURAMATSU
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/05
CPC分类号： H01L31/022441 , H01L31/022425 , H01L31/022433 , H01L31/0504 , H01L31/0747 , Y02E10/50
摘要： A photovoltaic apparatus 10 includes: a plurality of photovoltaic elements 11 having transparent conductive oxide layers 18, 19 and generating electrical power by light irradiation; and power collecting members provided on the front and back of each of the photovoltaic elements 11, wherein the power collecting members on the front sides are provided with finger electrodes 27 and a plurality of metallic conductor wires 28, the finger electrodes 27 formed on top of the transparent conductive oxide layers 18 in parallel by gravure offset printing, the thickness of the finger electrodes 27 formed to be 5 μm or less, the metallic conductor wires 28 orthogonally joined to the finger electrodes 27, and wherein the metallic conductor wires 28 are extended further in one direction and joined to one of the power collecting members provided on the back sides of the adjoining photovoltaic elements 11 to be connected in series.
摘要翻译：光电装置10包括：具有透明导电氧化物层18,19的多个光电元件11，并通过光照射产生电力; 以及设置在每个光电元件11的正面和背面的电力收集构件，其中前侧上的电力收集构件设置有指状电极27和多个金属导线28，指状电极27形成在透明导电氧化物层18通过凹版胶版印刷平行地形成，指状电极27的厚度形成为5μm以下，与指状电极27正交连接的金属导线28，并且其中金属导线28延伸进一步在一个方向上并且连接到设置在相邻的光伏元件11的背面上以串联连接的一个电力收集构件中。

3. 发明申请

US20160300967A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20160300967A1
公开(公告)日：2016-10-13
申请号：US14777800
申请日：2014-03-14
申请人： CHOSHU INDUSTRY CO., LTD.
发明人： Eiji KOBAYASHI
IPC分类号： H01L31/0376 , H01L31/0224 , H01L31/02 , H01L31/028
CPC分类号： H01L31/03762 , H01L31/0201 , H01L31/022433 , H01L31/022466 , H01L31/028 , H01L31/0747 , Y02E10/50
摘要： Provided is a photo-electric power generating device having a great fill factor. A photo-electric power generating device 10 including: a multilayered photo-electric power generating element 11; a first collector member 12 overlaid on one face of the photo-electric power generating element 11; and a second collector member 13 overlaid on other face of the photo-electric power generating element 11, the photo-electric power generating element 11 including: an n-type crystal semiconductor substrate 14; a first intrinsic amorphous silicon thin film 15, a p-type amorphous silicon thin film 16 and a first transparent conductive film 17 overlaid in this order on the side provided with the first collector member 12 on the n-type crystal semiconductor substrate 14; and an n-type amorphous silicon thin film 19 and a second transparent conductive film 20 overlaid in this order on the side provided with the second collector member 13 on the n-type crystal semiconductor substrate 14, in which the p-type amorphous silicon thin film 16 has a thickness of less than 6 nm, and the maximum width of the nonoverlaid region 25 of the first collector member 12 on the surface of the first transparent conductive film 17 is less than 2 mm.
摘要翻译：提供具有很大填充因子的光电发生装置。一种光电发生装置10，包括：多层光电发生元件11; 覆盖在光电发生元件11的一个面上的第一集电体12; 以及重叠在光电发生元件11的另一面上的第二集电体13，该光电发生元件11包括：n型晶体半导体衬底14; 在n型晶体半导体基板14上设置有第一集电体12的一侧依次重叠第一本征非晶硅薄膜15，p型非晶硅薄膜16和第一透明导电膜17; 以及n型非晶硅薄膜19和第二透明导电膜20依次叠置在n型晶体半导体基板14上的设置有第二集电体13的一侧，其中p型非晶硅薄膜薄膜16的厚度小于6nm，第一透明导电膜17的表面上的第一集电体12的非覆盖区域25的最大宽度小于2mm。

4. 发明申请

US20160284888A1 PHOTOVOLTAIC ELEMENT AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：光伏元件及其制造方法
公开(公告)号：US20160284888A1
公开(公告)日：2016-09-29
申请号：US14777772
申请日：2014-03-17
申请人： CHOSHU INDUSTRY CO., LTD.
发明人： Eiji KOBAYASHI
IPC分类号： H01L31/0236 , H01L31/0224 , H01L31/0747 , H01L31/028 , H01L31/20
CPC分类号： H01L31/02366 , H01L31/022425 , H01L31/022466 , H01L31/02363 , H01L31/028 , H01L31/0747 , H01L31/077 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： Provided are: a photovoltaic element that achieves an increased electrical efficiency due to having a pyramidal texture provided through etching a silicon substrate without the use of any organic solvent harmful to humans; and a manufacturing method therefor. A photovoltaic element 10 includes: a silicon substrate 11 having a pyramidal texture on the surface thereof, the pyramidal texture including a large number of pyramids and being provided through anisotropic etching; and amorphous silicon thin films 12 to 15 provided on the pyramidal texture through chemical vapor deposition, wherein the average length of diagonals of the square at base of the pyramids is adjusted to less than 5 μm through selection of etching conditions, the average length of diagonals being defined by the following formula of: average length of diagonals=(2*“area of visual field”/“number of vertices of pyramids found in visual field”)0.5.

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