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1. 发明申请

US20210157369A1 ELECTRONIC DEVICE 有权
公开(公告)号：US20210157369A1
公开(公告)日：2021-05-27
申请号：US17168136
申请日：2021-02-04
申请人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
发明人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
IPC分类号： G06F1/16 , H05K1/18
摘要： An electronic device includes a first body, a second body, two hinges, and at least one electronic assembly. The two hinges are connected between the first body and the second body, and the first body and the second body are adapted to rotate relatively through the two hinges. The electronic assembly is connected to the second body and is located between the two hinges.

2. 发明申请

US20210148388A1 CLAMP SLEEVE 有权
公开(公告)号：US20210148388A1
公开(公告)日：2021-05-20
申请号：US17096954
申请日：2020-11-13
申请人： CHIEN-TING LIN
发明人： CHIEN-TING LIN
IPC分类号： F16B2/06
摘要： Disclosed is a clamp sleeve adapted to be sleeved on an object, including: a body and a first fastening assembly. The body has first and second ends, and includes a receiving portion therein. The receiving portion has first and second openings at the first and second ends. The body is provided with a gap, the gap has two ends extending to the first and second openings, and the gap is communicated with the receiving portion. The body is provided with first extending portions at two sides of the gap along a longitudinal direction, the first extending portions is provided with a first connecting sheet near the first opening, and the first connecting sheet is connected to each of the first extending portions and connected with the first opening. The first connecting sheet is provided with a first thin thread intersecting with the gap. The first fastening assembly is disposed on the first extending portions.

3. 发明授权

US10963019B2 Electronic device with circuit board and hinge therein 有权
公开(公告)号：US10963019B2
公开(公告)日：2021-03-30
申请号：US16747534
申请日：2020-01-21
申请人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
发明人： Ming-Chung Peng , Ko-Fan Chen , Chun-Yi Ho , Chien-Ting Lin , Yu-Jung Liu , Hsin-Jung Lee , Hsin-Yu Huang , Jih-Houng Lee , Ming-Feng Liu , Kuo-Jung Wu , Kuo-Pin Chen , Chia-Ling Lee , Jing-Jie Lin
IPC分类号： G06F1/16 , H05K1/18
摘要： An electronic device includes a first body, a second body, two hinges, and at least one electronic assembly. The two hinges are connected between the first body and the second body, and the first body and the second body are adapted to rotate relatively through the two hinges. The electronic assembly is connected to the second body and is located between the two hinges.

4. 发明申请

US20210062964A1 SUPPORT LEG CONNECTING STRUCTURE FOR A TRIPOD 有权
公开(公告)号：US20210062964A1
公开(公告)日：2021-03-04
申请号：US16672551
申请日：2019-11-04
申请人： CHIEN-TING LIN
发明人： CHIEN-TING LIN
IPC分类号： F16M11/24 , F16B12/44
摘要： Provided is a support leg connecting structure for a tripod. The tripod includes a central tube, three support legs, three braces, and an upper tripod unit. The support leg connecting structure includes: a flat fixing portion formed at an appropriate portion of an outer wall of each of the support legs by pressing and recessing, and provided with a piercing hole; a recessed curved surface disposed between the flat fixing portion and an undeformed portion of the support leg; a curling portion formed on one end of each of the braces by curling, and having a through hole, the curling portion surrounding a periphery of the through hole; and a fastening part. The piercing hole corresponds to the through hole, the fastening part is inserted through the piercing hole and the through hole, the support leg and the brace are pivotally connected to each other around the fastening part.

5. 发明授权

US10344787B2 Side lock sleeve assembly 有权
公开(公告)号：US10344787B2
公开(公告)日：2019-07-09
申请号：US15346735
申请日：2016-11-09
申请人： Chien-Ting Lin
发明人： Chien-Ting Lin
IPC分类号： F16B7/14 , F16B7/18 , F16M11/28
摘要： A side lock sleeve assembly includes: a first tube, a sleeve having a first coupling portion defining a first receiving space for sleeving over the first tube, wherein a hole is formed on the first coupling portion at a position between a center of the first receiving space and an outer surface of the sleeve; and a fastening screw having an operation section and an extension section, wherein a diameter of the screw gradually decreases from the operation section toward the extension section such that threadedly extension of the extension section through the hole to retain the extension section between the sleeve and the first tube and such that threadedly insertion of the extension section of the screw through the hole results in a threaded fitting portion on an outer surface of the first tube complementing with the extension section, thereby snugly receiving the extension section of the screw therein.

6. 发明申请

US20180128298A1 SIDE LOCK SLEEVE ASSEMBLY 审中-公开
公开(公告)号：US20180128298A1
公开(公告)日：2018-05-10
申请号：US15346735
申请日：2016-11-09
申请人： CHIEN-TING LIN
发明人： CHIEN-TING LIN
IPC分类号： F16B7/14
CPC分类号： F16B7/1418 , F16B7/1472 , F16B7/182 , F16B7/185 , F16M11/245 , F16M11/28 , F16M2200/025 , F16M2200/027 , Y10T403/32501 , Y10T403/4949 , Y10T403/7084
摘要： A side lock sleeve assembly includes: a first tube, a sleeve having a first coupling portion defining a first receiving space for sleeving over the first tube, wherein a hole is formed on the first coupling portion at a position between a center of the first receiving space and an outer surface of the sleeve; and a fastening screw having an operation section and an extension section, wherein a diameter of the screw gradually decreases from the operation section toward the extension section such that threadedly extension of the extension section through the hole to retain the extension section between the sleeve and the first tube and such that threadedly insertion of the extension section of the screw through the hole results in a threaded fitting portion on an outer surface of the first tube complementing with the extension section, thereby snugly receiving the extension section of the screw therein.

7. 发明授权

US09384962B2 Oxygen treatment of replacement work-function metals in CMOS transistor gates 有权
标题翻译： CMOS晶体管栅极中替代工作功能金属的氧化处理
公开(公告)号：US09384962B2
公开(公告)日：2016-07-05
申请号：US13082387
申请日：2011-04-07
申请人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
发明人： Guang-Yaw Hwang , Chun-Hsien Lin , Hung-Ling Shih , Jiunn-Hsiung Liao , Zhi-Cheng Lee , Shao-Hua Hsu , Yi-Wen Chen , Cheng-Guo Chen , Jung-Tsung Tseng , Chien-Ting Lin , Tong-Jyun Huang , Jie-Ning Yang , Tsung-Lung Tsai , Po-Jui Liao , Chien-Ming Lai , Ying-Tsung Chen , Cheng-Yu Ma , Wen-Han Hung , Che-Hua Hsu
IPC分类号： H01L21/28 , H01L21/02
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/513 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7843 , H01L29/7845 , H01L29/7846
摘要： A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.
摘要翻译：提供一种制造金属栅极的方法。该方法包括提供基板。然后，在基板上形成栅极电介质层。在栅极电介质层上形成具有功函数金属层的多层堆叠结构。在多层堆叠结构的至少一层上进行O2气氛处理。在多层堆叠结构上形成导电层。

8. 发明授权

US08987096B2 Semiconductor process 有权
标题翻译：半导体工艺
公开(公告)号：US08987096B2
公开(公告)日：2015-03-24
申请号：US13367376
申请日：2012-02-07
申请人： Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
发明人： Ying-Tsung Chen , Chien-Ting Lin , Ssu-I Fu , Shih-Hung Tsai , Wen-Tai Chiang , Chih-Wei Chen , Chiu-Hsien Yeh , Shao-Wei Wang , Kai-Ping Wang
IPC分类号： H01L21/336 , H01L21/28 , H01L29/66 , H01L29/78 , H01L29/51
CPC分类号： H01L29/66477 , H01L21/28185 , H01L29/51 , H01L29/513 , H01L29/66545 , H01L29/7833
摘要： A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer.
摘要翻译：半导体工艺包括以下步骤。提供基板。进行臭氧饱和去离子水处理以在衬底上形成氧化物层。在氧化物层上形成介电层。在电介质层和氧化物层上进行后介电退火（PDA）工艺。

9. 发明授权

US08853013B2 Method for fabricating field effect transistor with fin structure 有权
标题翻译：具有翅片结构的场效应晶体管的制造方法
公开(公告)号：US08853013B2
公开(公告)日：2014-10-07
申请号：US13213092
申请日：2011-08-19
申请人： Shih-Hung Tsai , Rai-Min Huang , Chien-Ting Lin
发明人： Shih-Hung Tsai , Rai-Min Huang , Chien-Ting Lin
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7854
摘要： A method for fabricating a field effect transistor with fin structure includes the following sequences. First, a substrate is provided and at least a fin structure is formed on the substrate. Then, an etching process is performed to round at least an upper edge in the fin structure. Finally, a gate covering the fin structure is formed.
摘要翻译：制造具有鳍结构的场效应晶体管的方法包括以下顺序。首先，提供基板，并且在基板上形成至少一个翅片结构。然后，执行蚀刻处理以使鳍结构中的至少一个上边缘圆弧。最后，形成覆盖翅片结构的门。

10. 发明授权

US08816439B2 Gate structure of semiconductor device 有权
标题翻译：半导体器件的栅极结构
公开(公告)号：US08816439B2
公开(公告)日：2014-08-26
申请号：US12907036
申请日：2010-10-19
申请人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
发明人： Chih-Hao Yu , Li-Wei Cheng , Che-Hua Hsu , Tian-Fu Chiang , Cheng-Hsien Chou , Chien-Ming Lai , Yi-Wen Chen , Chien-Ting Lin , Guang-Hwa Ma
IPC分类号： H01L29/76 , H01L27/11
CPC分类号： H01L27/11
摘要： A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.
摘要翻译：半导体器件的栅极结构包括第一低电阻导电层，第二低电阻导电层和设置在第一低电阻导电层和第二低电阻导电层的侧壁之间且直接接触的第一类型导电层。

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