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1. 发明授权

US08916911B2 Semiconductor devices having backside illuminated image sensors 有权
标题翻译：具有背面照明图像传感器的半导体器件
公开(公告)号：US08916911B2
公开(公告)日：2014-12-23
申请号：US13180898
申请日：2011-07-12
申请人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
发明人： Gil-Sang Yoo , Chang-Rok Moon , Byung-Jun Park , Sang-Hoon Kim , Seung-Hun Shin
IPC分类号： H01L27/148 , H01L27/146 , H04N5/225
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14618 , H01L27/1464 , H01L27/14645 , H01L27/14689 , H01L2224/13 , H04N5/2253 , H04N5/2254
摘要： A semiconductor substrate includes a photodiode on a support substrate. An insulating layer is provided between the support substrate and the semiconductor substrate. A first conductive pattern is provided in the insulating layer. A first through electrode penetrates the support substrate to be in contact with the first conductive pattern.
摘要翻译：半导体衬底包括在支撑衬底上的光电二极管。在支撑基板和半导体基板之间设置绝缘层。第一导电图案设置在绝缘层中。第一穿透电极穿透支撑衬底以与第一导电图案接触。

2. 发明申请

US20140264695A1 Image Sensor and Method of Manufacturing the Same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20140264695A1
公开(公告)日：2014-09-18
申请号：US14212045
申请日：2014-03-14
申请人： Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
发明人： Yun-Ki Lee , Chang-Rok Moon , Duck-Hyung Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14601 , H01L27/1463 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L27/14689
摘要： An image sensor includes a semiconductor layer having a first surface and a second surface opposite to each other and including a photodiode and a hydrogen containing region adjacent the first surface. A crystalline anti-reflective layer is on the first surface of the semiconductor layer, and is configured to allow hydrogen atoms to penetrate into the first surface of the semiconductor layer. Driving transistors and wires are on the second surface of the semiconductor layer, and a color filter and a micro lens are on the anti-reflective layer. The hydrogen containing region contains hydrogen atoms that combine with defects at the first surface.
摘要翻译：图像传感器包括具有彼此相对的第一表面和第二表面的半导体层，并且包括光电二极管和与第一表面相邻的含氢区域。晶体抗反射层位于半导体层的第一表面上，并且被配置为允许氢原子穿透到半导体层的第一表面。驱动晶体管和导线位于半导体层的第二表面上，滤色器和微透镜位于抗反射层上。含氢区含有与第一表面的缺陷结合的氢原子。

3. 发明授权

US08633557B2 Image sensors 有权
标题翻译：图像传感器
公开(公告)号：US08633557B2
公开(公告)日：2014-01-21
申请号：US13599960
申请日：2012-08-30
申请人： Sang-Hoon Kim , Chang-Rok Moon
发明人： Sang-Hoon Kim , Chang-Rok Moon
IPC分类号： H01L31/0232
CPC分类号： H01L27/14636 , H01L27/1464 , H01L27/14689
摘要： Image sensors include a first insulation interlayer structure on a first surface of a substrate and having a multi-layered structure. A first wiring structure is in the first insulation interlayer structure. A via contact plug extends from a second surface of the substrate and penetrates the substrate to be electrically connected to the first wiring structure. Color filters and micro lenses are stacked on the second surface in a first region of the substrate. A second insulation interlayer structure is on the second surface in a second region of the substrate. A second wiring structure is in the second insulation interlayer structure to be electrically connected to the via contact plug. A pad pattern is electrically connected to the second wiring structure and having an upper surface through which an external electrical signal is applied. Photodiodes are between the first and second wiring structures in the first region.
摘要翻译：图像传感器包括在基板的第一表面上的具有多层结构的第一绝缘夹层结构。第一布线结构处于第一绝缘夹层结构中。通孔接触插塞从基板的第二表面延伸并穿透基板以电连接到第一布线结构。彩色滤光器和微透镜在衬底的第一区域中的第二表面上堆叠。第二绝缘层间结构位于衬底的第二区域中的第二表面上。第二布线结构在第二绝缘层间结构中，以电连接到通孔接触插塞。焊盘图案电连接到第二布线结构，并且具有施加外部电信号的上表面。光电二极管位于第一区域中的第一和第二布线结构之间。

4. 发明申请

US20120187463A1 CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR 有权
标题翻译： CMOS图像传感器，包括背光照明结构和制造图像传感器的方法
公开(公告)号：US20120187463A1
公开(公告)日：2012-07-26
申请号：US13438340
申请日：2012-04-03
申请人： Chang-Rok MOON , Duck-hyung LEE , Seong-ho Cho
发明人： Chang-Rok MOON , Duck-hyung LEE , Seong-ho Cho
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
摘要翻译：具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

5. 发明授权

US08164126B2 CMOS image sensors including backside illumination structure 有权
标题翻译： CMOS图像传感器包括背面照明结构
公开(公告)号：US08164126B2
公开(公告)日：2012-04-24
申请号：US12037691
申请日：2008-02-26
申请人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
发明人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
摘要翻译：具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

6. 发明申请

US20120077301A1 IMAGE SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20120077301A1
公开(公告)日：2012-03-29
申请号：US13239457
申请日：2011-09-22
申请人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
发明人： Yu-Jin Ahn , Duck-Hyung Lee , Jong-Cheol Shin , Chang-Rok Moon , Sang-Jun Choi , Eun-Kyung Park
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/1463
摘要： An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
摘要翻译：提供了一种用于制造图像传感器的图像传感器和方法。制造图像传感器的方法包括在具有多个像素区域的半导体外延层上形成第一绝缘层; 在像素区域之间的边界区域中构图半导体外延层和第一绝缘层的一部分以形成沟槽; 在所述第一绝缘层上形成掩埋绝缘层，填充所述沟槽，所述掩埋绝缘层具有平坦的顶表面; 在所述掩埋绝缘层上形成第二绝缘层; 在所述第二绝缘层上形成第一掩模图案，所述第一掩模图案限定与所述沟槽重叠的开口; 以及使用所述第一掩模图案作为离子注入掩模进行离子注入处理，以在所述沟槽的底部形成第一类型的势垒区域。

7. 发明申请

US20090273008A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090273008A1
公开(公告)日：2009-11-05
申请号：US12504807
申请日：2009-07-17
申请人： Chang Rok Moon
发明人： Chang Rok Moon
IPC分类号： H01L27/148 , H01L31/0216
CPC分类号： H01L21/0214 , G03F7/091 , H01L21/3144 , H01L21/3145 , H01L27/14609 , H01L27/1462 , H01L27/14627 , H01L27/14643 , H01L27/14685 , H01L27/14843
摘要： In a solid state imaging device, and a method of manufacture thereof, the efficiency of the transfer of available photons to the photo-receiving elements is increased beyond that which is currently available. Enhanced anti-reflection layer configurations, and methods of manufacture thereof, are provided that allow for such increased efficiency. They are applicable to contemporary imaging devices, such as charge-coupled devices (CCDs) and CMOS image sensors (CISs). In one embodiment, a photosensitive device is formed in a semiconductor substrate. The photosensitive device includes a photosensitive region. An anti-reflection layer comprising silicon oxynitride is formed on the photosensitive region. The silicon oxynitride layer is heat treated to increase a refractive index of the silicon oxynitride layer, and to thereby decrease reflectivity of incident light at the junction of the photosensitive region.
摘要翻译：在固态成像装置及其制造方法中，将可用光子传递到光接收元件的效率提高到超过当前可用的光子的效率。提供增强的抗反射层结构及其制造方法，其允许这种提高的效率。它们适用于当代成像设备，如电荷耦合器件（CCD）和CMOS图像传感器（CIS）。在一个实施例中，在半导体衬底中形成感光器件。感光装置包括感光区域。在感光区域上形成包含氮氧化硅的抗反射层。氧氮化硅层被热处理以增加氧氮化硅层的折射率，从而降低光敏区域的接合处的入射光的反射率。

8. 发明申请

US20080308852A1 IMAGE SENSOR CIRCUITS INCLUDING SHARED FLOATING DIFFUSION REGIONS 有权
标题翻译：图像传感器电路，包括共享浮动扩展区域
公开(公告)号：US20080308852A1
公开(公告)日：2008-12-18
申请号：US12139022
申请日：2008-06-13
申请人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
发明人： Seok-Ha Lee , Chang-Rok Moon , Kang-Bok Lee
IPC分类号： H01L31/113
CPC分类号： H01L27/14643 , H01L27/14641 , H04N5/3575 , H04N5/3741 , H04N5/37457 , H04N5/378
摘要： An image sensor can include a plurality of photoelectric conversion elements arranged in a matrix. A plurality of floating diffusion regions can be shared by respective corresponding pairs of adjacent photoelectric conversion elements. A plurality of charge-transmission transistors can respectively correspond to the photoelectric conversion elements, where each of the charge-transmission transistors are connected between a corresponding one of the plurality of photoelectric conversion elements and a corresponding one of the plurality of floating diffusion regions. A plurality of charge-transmission lines can be commonly connected to gates of respective corresponding pairs of adjacent rows of charge-transmission transistors, where each of the respective corresponding pairs of adjacent rows of charge-transmission transistors can be connected to respective ones of the plurality of photoelectric conversion elements in different adjacent rows of floating diffusion regions.
摘要翻译：图像传感器可以包括以矩阵形式布置的多个光电转换元件。多个浮动扩散区域可由相应的相应光电转换元件对共享。多个电荷传输晶体管可以分别对应于光电转换元件，其中每个电荷传输晶体管连接在多个光电转换元件中的相应一个光电转换元件和多个浮动扩散区域中相应的一个之间。多个电荷传输线可以共同地连接到相应的相应的一对电荷传输晶体管的栅极，其中各个相应的电荷传输晶体管对中的每一对可以连接到多个电荷传输晶体管中的相应行的不同相邻行的浮动扩散区域中的光电转换元件。

9. 发明申请

US20080128845A1 Image sensor and method of forming the same 有权
标题翻译：图像传感器及其形成方法
公开(公告)号：US20080128845A1
公开(公告)日：2008-06-05
申请号：US11999227
申请日：2007-12-04
申请人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
发明人： Sung-Ho Hwang , Duck-Hyung Lee , Chang-Rok Moon
IPC分类号： H01L31/0232
CPC分类号： H01L27/14625 , H01L27/14632 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L27/14687 , H01L31/02165 , H01L31/02327
摘要： Provided are an image sensor and a method of forming the image sensor. The image sensor has a base multi-layered reflection layer interposed between a photodiode and an interlayer insulating layer. The photodiode has a first surface adjacent to the interlayer insulating layer and a second surface opposite the first surface. Here, external light is incident on the second surface of the photodiode. Also, the image sensor includes a sidewall multi-layered reflection layer that encloses the photodiode.
摘要翻译：提供了一种图像传感器和形成图像传感器的方法。图像传感器具有介于光电二极管和层间绝缘层之间的基底多层反射层。光电二极管具有与层间绝缘层相邻的第一表面和与第一表面相对的第二表面。这里，外部光入射到光电二极管的第二表面上。此外，图像传感器包括围绕光电二极管的侧壁多层反射层。

10. 发明申请

US20080070166A1 Image sensor and method of forming the same 审中-公开
标题翻译：图像传感器及其形成方法
公开(公告)号：US20080070166A1
公开(公告)日：2008-03-20
申请号：US11898662
申请日：2007-09-14
申请人： Byung-Jun Park , Chang-Rok Moon , Yun-Ki Lee
发明人： Byung-Jun Park , Chang-Rok Moon , Yun-Ki Lee
IPC分类号： G03C5/00 , G06K9/20
CPC分类号： H01L27/14627 , H01L27/14685
摘要： One example embodiment may include an image sensor including a substrate, and a plurality of microlenses formed on the substrate. Each of the microlenses may include a base lens and a crosslinked overcoating film on a surface of the base lens.
摘要翻译：一个示例实施例可以包括图像传感器，其包括衬底和形成在衬底上的多个微透镜。每个微透镜可以在基底透镜的表面上包括基底透镜和交联的外涂膜。

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