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1. 发明授权

US08083950B2 Methods for recovering organic-inorganic element-doped metal oxides from hydrolysable metal compounds associated with contaminated water treatment 有权
标题翻译：从与受污染水处理相关的可水解金属化合物中回收有机 - 无机元素掺杂金属氧化物的方法
公开(公告)号：US08083950B2
公开(公告)日：2011-12-27
申请号：US12161293
申请日：2006-01-18
申请人： Hokyong Shon , Vigneswaran Saravanamuthu , Erdei Laszlo , Jong Ho Kim , Jong Beom Kim , Dong Lyun Cho , Byung Chul Choi , Kun Jung Kim , Myung Wan Kim , Sung Jung Song , Hee Ju Park , Jaeweon Cho , In-soo Kim , Seung-hyun Kim
发明人： Hokyong Shon , Vigneswaran Saravanamuthu , Erdei Laszlo , Jong Ho Kim , Jong Beom Kim , Dong Lyun Cho , Byung Chul Choi , Kun Jung Kim , Myung Wan Kim , Sung Jung Song , Hee Ju Park , Jaeweon Cho , In-soo Kim , Seung-hyun Kim
IPC分类号： C02F1/52
CPC分类号： C02F1/5236 , C02F1/30 , C02F1/32 , C02F1/725 , C02F9/00 , C02F11/18 , C02F2103/007 , C02F2103/06 , C02F2305/10 , Y02W10/37
摘要： The present invention relates to a method for recovering an organic-inorganic element-doped metal oxide from a hydrolysable metal compound, accompanied with contaminated water treatment. The present invention comprises steps of: a) adding a hydrolysable metal compound as a coagulant to a contaminated water to form a separable floc between the hydrolysable metal compound and contaminants present in contaminated water; b) separating the separable floc and the pre-treated water after flocculation treatment; and c) calcinating the separated floc over 500° C. to produce an organic-inorganic element-doped metal oxide. More preferably, the present invention further comprises subjecting the pre-treated water of the step b) to a microwave treatment to cause a photocatalytic degradation of an organic contaminant that remains in the pre-treated water, with the assistance of the remaining hydrolysable metal compound. A novel titanium compound is found as an alternative coagulant instead of iron and aluminum salts which most widely use in water treatment. Ability, capacity and efficiency of flocculation as the proposed titanium coagulant are similar to those of FeCl3 and alum coagulants in terms of removing organic matter. Titania produced by calcination of the separated floc after TiCl4 flocculation is mainly doped with C and P atoms.
摘要翻译：本发明涉及一种伴随污染水处理从可水解金属化合物中回收有机 - 无机元素掺杂金属氧化物的方法。本发明包括以下步骤：a）将可水解的金属化合物作为凝结剂加入到污染的水中以在可水解金属化合物和污染水中存在的污染物之间形成可分离的絮凝物; b）絮凝处理后分离可分离的絮凝物和预处理水; 和c）在500℃下煅烧分离的絮凝物以产生有机 - 无机元素掺杂的金属氧化物。更优选地，本发明进一步包括使步骤b）的预处理水经受微波处理以在残留在预处理水中的有机污染物的光催化降解下，借助于剩余的可水解金属化合物。发现一种新的钛化合物作为替代的凝结剂，而不是最广泛用于水处理的铁和铝盐。作为提出的钛凝结剂的絮凝能力，能力和效率与去除有机物质方面与FeCl3和明矾凝结剂相似。在TiCl4絮凝后煅烧分离的絮凝物产生的二氧化钛主要掺杂有C和P原子。

2. 发明申请

US20070281447A1 Method of loading and/or unloading wafer in semiconductor manufacturing apparatus 审中-公开
标题翻译：在半导体制造装置中装载和/或卸载晶片的方法
公开(公告)号：US20070281447A1
公开(公告)日：2007-12-06
申请号：US11637789
申请日：2006-12-13
申请人： Hyung-Goo Lee , Ki-Tae Ki , Eui-Hwan Kim , Young-Il Shin , Kwang-Han Lee , Chang-Sik Jun , Kyoung-Hwan Chin , Byung-Chul Choi
发明人： Hyung-Goo Lee , Ki-Tae Ki , Eui-Hwan Kim , Young-Il Shin , Kwang-Han Lee , Chang-Sik Jun , Kyoung-Hwan Chin , Byung-Chul Choi
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4586 , C23C16/54 , H01L21/67017
摘要： In a method of unloading and/or loading a wafer in a semiconductor device manufacturing apparatus, pumping and/or purge operations are performed in a process chamber while the wafer is separated from a susceptor by a desired distance using a plurality of lift pins.
摘要翻译：在半导体器件制造装置中卸载和/或加载晶片的方法中，在处理室中进行泵送和/或清除操作，同时使用多个提升销将晶片与基座分离所需的距离。

3. 发明申请

US20070266946A1 Semiconductor device manufacturing apparatus and method of using the same 审中-公开
标题翻译：半导体装置的制造装置及其使用方法
公开(公告)号：US20070266946A1
公开(公告)日：2007-11-22
申请号：US11593493
申请日：2006-11-07
申请人： Byung-Chul Choi
发明人： Byung-Chul Choi
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/4405 , H01J37/32357 , H01J37/3244
摘要： A semiconductor device manufacturing apparatus and a method for use in the manufacturing of such devices minimize the amount of particles which accumulate in the process chamber of the apparatus and clean the interior of the process chamber with a high degree of effectiveness. The semiconductor device manufacturing apparatus has a showerhead located at an upper portion of the process chamber, a plate-like gas diffuser disposed in the showerhead, and both a fluid supply line and a plasma waveguide connected to the showerhead. After a substrate is processed in the process chamber using process gas delivered to the showerhead through the fluid supply line, plasma is supplied into the upper portion of the process chamber from a remote plasma reactor via the plasma waveguide.
摘要翻译：半导体器件制造装置和用于制造这种装置的方法使得积聚在装置的处理室中的颗粒的量最小化并以高效率清洁处理室的内部。半导体器件制造装置具有位于处理室的上部的喷头，设置在喷头中的板状气体扩散器，以及连接到喷头的流体供给线和等离子体波导。在使用通过流体供应管路输送到喷头的处理气体在处理室中处理基板之后，等离子体通过等离子体波导从远程等离子体反应器供应到处理室的上部。

4. 发明申请

US20090218294A1 Methods for Recovering Organic-Inorganic Element-Doped Metal Oxides from Hydrolysable Metal Compounds Associated with Contaminated Water Treatment 有权
标题翻译：从与受污染水处理相关的可水解金属化合物中回收有机 - 无机元素掺杂金属氧化物的方法
公开(公告)号：US20090218294A1
公开(公告)日：2009-09-03
申请号：US12161293
申请日：2006-01-18
申请人： Hokyong Shon , Vigneswaran Saravanamuthu , Erdei Laszlo , Jong Ho Kim , Jong Beom Kim , Dong Lyun Cho , Byung Chul Choi , Kun Jung Kim , Myung Wan Kim , Sung Jung Song , Hee Ju Park , Jaeweon Cho , In-soo Kim , Seung-hyun Kim
发明人： Hokyong Shon , Vigneswaran Saravanamuthu , Erdei Laszlo , Jong Ho Kim , Jong Beom Kim , Dong Lyun Cho , Byung Chul Choi , Kun Jung Kim , Myung Wan Kim , Sung Jung Song , Hee Ju Park , Jaeweon Cho , In-soo Kim , Seung-hyun Kim
IPC分类号： C02F1/52 , C02F1/02 , C02F1/30 , C02F1/32
CPC分类号： C02F1/5236 , C02F1/30 , C02F1/32 , C02F1/725 , C02F9/00 , C02F11/18 , C02F2103/007 , C02F2103/06 , C02F2305/10 , Y02W10/37
摘要： The present invention relates to a method for recovering an organic-inorganic element-doped metal oxide from a hydrolysable metal compound, accompanied with contaminated water treatment. The present invention comprises steps of: a) adding a hydrolysable metal compound as a coagulant to a contaminated water to form a separable floc between the hydrolysable metal compound and contaminants present in contaminated water; b) separating the separable floc and the pre-treated water after flocculation treatment; and c) calcinating the separated floc over 500° C. to produce an organic-inorganic element-doped metal oxide. More preferably, the present invention further comprises subjecting the pre-treated water of the step b) to a microwave treatment to cause a photocatalytic degradation of an organic contaminant that remains in the pre-treated water, with the assistance of the remaining hydrolysable metal compound. A novel titanium compound is found as an alternative coagulant instead of iron and aluminum salts which most widely use in water treatment. Ability, capacity and efficiency of flocculation as the proposed titanium coagulant are similar to those of FeCl3 and alum coagulants in terms of removing organic matter. Titania produced by calcination of the separated floc after TiCl4 flocculation is mainly doped with C and P atoms.
摘要翻译：本发明涉及一种伴随污染水处理从可水解金属化合物中回收有机 - 无机元素掺杂金属氧化物的方法。本发明包括以下步骤：a）将可水解的金属化合物作为凝结剂加入到污染的水中以在可水解金属化合物和污染水中存在的污染物之间形成可分离的絮凝物; b）絮凝处理后分离可分离的絮凝物和预处理水; 和c）在500℃下煅烧分离的絮凝物以产生有机 - 无机元素掺杂的金属氧化物。更优选地，本发明进一步包括使步骤b）的预处理水经受微波处理以在残留在预处理水中的有机污染物的光催化降解下，借助于剩余的可水解金属化合物。发现一种新的钛化合物作为替代的凝结剂，而不是最广泛用于水处理的铁和铝盐。作为提出的钛凝结剂的絮凝能力，能力和效率与去除有机物质方面与FeCl3和明矾凝结剂相似。在TiCl4絮凝后煅烧分离的絮凝物产生的二氧化钛主要掺杂有C和P原子。

5. 发明申请

US20060121211A1 Chemical vapor deposition apparatus and chemical vapor deposition method using the same 审中-公开
标题翻译：化学气相沉积装置及使用其的化学气相沉积方法
公开(公告)号：US20060121211A1
公开(公告)日：2006-06-08
申请号：US11294429
申请日：2005-12-06
申请人： Byung-Chul Choi
发明人： Byung-Chul Choi
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01J37/3244 , C23C16/401 , C23C16/455 , C23C16/5096 , H01J37/32834
摘要： chemical vapor deposition (CVD) equipment and a CVD method using the same enhance production yield by preventing non-reacted gas from agglomerating on a substrate before the plasma reaction is induced. This source gas is composed of first and second gases. Only the first gas is initially supplied into the process chamber of the CVD equipment. Then the second source gas and the first source gas are supplied as a mixture but at this time are dumped to the exhaust section of the CVD equipment so as to bypass the process chamber. After a delay, the first source gas and the second source gas are supplied together as source gas into the process chamber and at this time, an RF power is applied to the source gas to induce the plasma reaction that forms a film on a wafer disposed inside the chamber. Thus, non-reacted gas is prevented from agglomerating on the substrate. As a result, the film has a high degree of uniformity.
摘要翻译：化学气相沉积（CVD）设备和使用该化学气相沉积（CVD）设备的CVD方法通过在引发等离子体反应之前防止未反应的气体聚集在基板上来提高生产率。该源气体由第一和第二气体构成。首先将气体首先供应到CVD设备的处理室中。然后将第二源气体和第一源气体作为混合物供给，此时被倾倒到CVD设备的排气部分，以绕过处理室。延迟后，将第一源气体和第二源气体作为源气体一起供入到处理室中，此时，将RF功率施加到源气体，以引起在设置的晶片上形成膜的等离子体反应在房间里面因此，防止未反应的气体在基板上附聚。结果，膜具有高度的均匀性。

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