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1. 发明授权

US08912618B2 Deposition of photovoltaic thin films by plasma spray deposition 有权
标题翻译：通过等离子喷涂沉积沉积光伏薄膜
公开(公告)号：US08912618B2
公开(公告)日：2014-12-16
申请号：US13775676
申请日：2013-02-25
申请人： Brian Josef Bartholomeusz , Michael Bartholomeusz
发明人： Brian Josef Bartholomeusz , Michael Bartholomeusz
IPC分类号： H01L31/00
CPC分类号： H01L31/18 , H01L21/02521 , H01L21/02532 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0352 , Y02E10/541 , Y02P70/521
摘要： In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.
摘要翻译：在特定实施例中，描述了一种沉积薄膜的方法，例如用于形成光伏电池或器件的薄膜。在一个具体实施方案中，该方法包括提供适合用于光伏器件的衬底和等离子体喷涂衬底上的一个或多个层，所述一个或多个层中的每个层中的晶粒的晶粒尺寸为至少大约两倍比各层的厚度。

2. 发明申请

US20130276888A1 Reverse Stack Structures for Thin-Film Photovoltaic Cells 有权
标题翻译：薄膜光伏电池的反向堆叠结构
公开(公告)号：US20130276888A1
公开(公告)日：2013-10-24
申请号：US13452603
申请日：2012-04-20
申请人： Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
发明人： Mariana Rodica Munteanu , Amith Kumar Murali , Kirk Hayes , Brian Josef Bartholomeusz
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/1892 , H01L31/0322 , H01L31/0326 , H01L31/03928 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.
摘要翻译：在一个实施例中，一种方法包括将光敏层沉积到第一衬底上，将接触层沉积到光敏层上，将第二衬底附着到接触层上，以及从光敏层，接触层和第二衬底去除第一衬底。

3. 发明授权

US09103000B2 Low melting point sputter targets for chalcogenide photovoltaic applications and methods of manufacturing the same 有权
标题翻译：硫族化物光伏应用的低熔点溅射靶及其制造方法
公开(公告)号：US09103000B2
公开(公告)日：2015-08-11
申请号：US12953129
申请日：2010-11-23
申请人： Mariana Munteanu , Brian Josef Bartholomeusz , Michael Bartholomeusz , Erol Girt
发明人： Mariana Munteanu , Brian Josef Bartholomeusz , Michael Bartholomeusz , Erol Girt
IPC分类号： C22C9/00 , C23C14/06 , C23C14/34 , C22C1/04 , C04B35/547 , C04B35/645 , C04B35/653
CPC分类号： C22C1/0491 , B22F2998/10 , C04B35/547 , C04B35/6455 , C04B35/653 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/42 , C04B2235/446 , C04B2235/6565 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C23C14/0623 , C23C14/3414 , C22C1/1084 , B22F3/10
摘要： In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.
摘要翻译：在一个示例性实施例中，描述了用于沉积半导体硫族化物膜的溅射靶结构。溅射靶包括具有包含Cu1-x（Se1-y-zSyTez）x的靶体组成的靶体，其中x的值大于或等于约0.5，y的值在大约0和大约0之间如图1所示，z的值在大约0和大约1之间，并且靶体组成中的Se，S和Te相的总量包含小于目标体组成的50体积％。

4. 发明授权

US5696747A System and method for high resolution optical recording using dual optical sources and an induced shift in media absorption 失效
标题翻译：用于使用双光源的高分辨率光学记录和介质吸收的诱导位移的系统和方法
公开(公告)号：US5696747A
公开(公告)日：1997-12-09
申请号：US660830
申请日：1996-06-10
申请人： Brian Josef Bartholomeusz
发明人： Brian Josef Bartholomeusz
IPC分类号： G11B7/0045 , G11B7/00
CPC分类号： B82Y10/00 , G11B7/00455
摘要： A system and method for recording data on an optical recording medium. One system in accordance with the invention includes an optical recording medium which absorbs less radiation at a first wavelength than at a second wavelength; a first optical source to generate a first radiation beam at the first wavelength; a second optical source to generate a second radiation beam at the second wavelength; and means for applying the first radiation beam and the second radiation beam, at least one of which is modulated by recording data, to the recording medium. The second radiation beam, which may have a shorter wavelength than the first radiation beam, induces a shift in the absorption response of a region of the medium. The region then absorbs an increased amount of radiation at the first wavelength such that a high resolution mark may be formed on the medium.
摘要翻译：一种用于在光学记录介质上记录数据的系统和方法。根据本发明的一个系统包括一种光学记录介质，其吸收比第二波长的第一波长的更少的辐射; 第一光源，用于产生第一波长的第一辐射束; 第二光源，用于产生第二波长的第二辐射束; 以及用于将其中的至少一个通过记录数据调制的第一辐射束和第二辐射束施加到记录介质的装置。可以具有比第一辐射束更短的波长的第二辐射束诱导介质区域的吸收响应的偏移。该区域然后在第一波长处吸收增加量的辐射，使得可以在介质上形成高分辨率标记。

5. 发明授权

US08709856B2 Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques 有权
标题翻译：通过溶液涂覆技术加入碱性盐来增强半导体光伏吸收剂
公开(公告)号：US08709856B2
公开(公告)日：2014-04-29
申请号：US12717767
申请日：2010-03-04
申请人： Brian Josef Bartholomeusz , Michael Bartholomeusz
发明人： Brian Josef Bartholomeusz , Michael Bartholomeusz
IPC分类号： H01L21/00
CPC分类号： H01L31/02167 , H01L21/02425 , H01L21/02491 , H01L21/02568 , H01L21/02628 , H01L31/0322 , H01L31/0392 , H01L31/03923 , H01L31/03925 , H01L31/0749 , Y02E10/541
摘要： In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.
摘要翻译：在特定实施例中，描述了一种用于形成光伏器件的方法，其包括提供适合用于光伏器件的衬底，在衬底上沉积导电接触层，在导电接触层的表面上沉积盐溶液，该溶液包含挥发性溶剂和碱金属盐溶质，并在被蒸发的溶剂留下的溶质残余物上沉积半导体吸收层。

6. 发明申请

US20130217176A1 Closed-Space Annealing of Chalcogenide Thin-Films with Volatile Species 有权
标题翻译：具有挥发物种的硫族化物薄膜的封闭空间退火
公开(公告)号：US20130217176A1
公开(公告)日：2013-08-22
申请号：US13467868
申请日：2012-05-09
申请人： Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
发明人： Mariana Rodica Munteanu , Amith Kumar Murali , Brian Josef Bartholomeusz , Vardaan Chawla
IPC分类号： H01L31/18 , C23C16/56
CPC分类号： C23C16/56 , C23C14/0623 , C23C14/0629 , C23C14/5866 , C23C16/305 , C23C16/306 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a method includes depositing a chalcogenide precursor layer onto a substrate, introducing a cover into proximity with the precursor layer, and annealing the precursor layer in proximity with of the cover, where the annealing is performed in a constrained volume, and where the presence of the cover reduces decomposition of volatile species from the precursor layer during annealing.
摘要翻译：在一个实施方案中，一种方法包括将硫族化物前体层沉积到基底上，将盖引入靠近前体层，以及使覆盖层附近的前体层退火，其中退火在约束体积内进行，其中覆盖层的存在减少了退火过程中挥发物质从前体层的分解。

7. 发明授权

US08383451B2 Deposition of photovoltaic thin films by plasma spray deposition 有权
标题翻译：通过等离子喷涂沉积沉积光伏薄膜
公开(公告)号：US08383451B2
公开(公告)日：2013-02-26
申请号：US12716024
申请日：2010-03-02
申请人： Brian Josef Bartholomeusz , Michael Bartholomeusz
发明人： Brian Josef Bartholomeusz , Michael Bartholomeusz
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L21/02521 , H01L21/02532 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0352 , Y02E10/541 , Y02P70/521
摘要： In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.
摘要翻译：在特定实施例中，描述了一种沉积薄膜的方法，例如用于形成光伏电池或器件的薄膜。在一个具体实施方案中，该方法包括提供适合用于光伏器件的衬底和等离子体喷涂衬底上的一个或多个层，所述一个或多个层中的每个层中的晶粒的晶粒尺寸为至少大约两倍比各层的厚度。

8. 发明申请

US20120240980A1 Interconnection Schemes for Photovoltaic Cells 审中-公开
标题翻译：光伏电池互连方案
公开(公告)号：US20120240980A1
公开(公告)日：2012-09-27
申请号：US13486891
申请日：2012-06-01
申请人： Brian Josef Bartholomeusz
发明人： Brian Josef Bartholomeusz
IPC分类号： H01L31/05 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/0508 , H01L31/0326 , H01L31/0749 , Y02E10/541
摘要： In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; depositing a top-contact layer over the a photovoltaic-absorber layer; and placing an interconnection sheet onto the top-contact layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact for the interconnection sheet. In this way, the interconnection sheet electrically connects the photovoltaic cell with the adjacent photovoltaic cells via electrical contact with the top-contact layer of one photovoltaic cell and the exposed bottom-contact layer of an adjacent photovoltaic cell.
摘要翻译：在具体实施例中，描述了一种用于制造光伏电池的方法，并且包括提供基板; 在衬底上沉积底部接触层; 掩蔽底部接触层的一部分; 在所述底部接触层上沉积光电吸收层; 在光伏吸收体层上沉积顶部接触层; 并将互连片放置在顶部接触层上。底部接触层的一部分在由于掩蔽而沉积光伏吸收层和顶部接触层之后被暴露，从而使底部接触层的暴露部分适合用作电接触互连片。以这种方式，互连片通过与一个光伏电池的顶部接触层和相邻的光伏电池的暴露的底部接触层的电接触将光伏电池与相邻的光伏电池电连接。

9. 发明申请

US20120199173A1 Interconnection Schemes for Photovoltaic Cells 审中-公开
标题翻译：光伏电池互连方案
公开(公告)号：US20120199173A1
公开(公告)日：2012-08-09
申请号：US13447066
申请日：2012-04-13
申请人： Brian Josef Bartholomeusz
发明人： Brian Josef Bartholomeusz
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0504 , H01L31/0326 , H01L31/0508 , Y02E10/50
摘要： In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom-contact layer over the substrate; masking a portion of the bottom-contact layer; depositing a photovoltaic-absorber layer over the bottom-contact layer; and depositing a top-contact layer over the a photovoltaic-absorber layer. A portion of the bottom-contact layer is left exposed after depositing the photovoltaic-absorber layer and the top-contact layer as a result of the masking, thereby leaving the exposed portion of the bottom-contact layer suitable for use as an electrical contact.
摘要翻译：在具体实施例中，描述了一种用于制造光伏电池的方法，并且包括提供基板; 在衬底上沉积底部接触层; 掩蔽底部接触层的一部分; 在所述底部接触层上沉积光电吸收层; 以及在光伏吸收层上沉积顶部接触层。底部接触层的一部分在沉积作为掩蔽的结果的光电吸收层和顶部接触层之后被暴露，从而使底部接触层的暴露部分适合用作电接触。

10. 发明申请

US20110290643A1 Low Melting Point Sputter Targets for Chalcogenide Photovoltaic Applications and Methods of Manufacturing the Same 有权
标题翻译：硫族化合物光伏应用的低熔点溅射靶和其制造方法
公开(公告)号：US20110290643A1
公开(公告)日：2011-12-01
申请号：US12953129
申请日：2010-11-23
申请人： Mariana MUNTEANU , Brian Josef BARTHOLOMEUSZ , Michael BARTHOLOMEUSZ , Erol GIRT
发明人： Mariana MUNTEANU , Brian Josef BARTHOLOMEUSZ , Michael BARTHOLOMEUSZ , Erol GIRT
IPC分类号： C23C14/34 , C04B35/653
CPC分类号： C22C1/0491 , B22F2998/10 , C04B35/547 , C04B35/6455 , C04B35/653 , C04B2235/3201 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3256 , C04B2235/3258 , C04B2235/3262 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3289 , C04B2235/3293 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/42 , C04B2235/446 , C04B2235/6565 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C23C14/0623 , C23C14/3414 , C22C1/1084 , B22F3/10
摘要： In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body having a target body composition that comprises Cu1-x(Se1-y-zSyTez)x, wherein the value of x is greater than or equal to approximately 0.5, the value of y is between approximately 0 and approximately 1, the value of z is between approximately 0 and approximately 1, and the total amount of Se, S, and Te phases in the target body composition comprise less than 50 volume percent of the target body composition.
摘要翻译：在一个示例性实施例中，描述了用于沉积半导体硫族化物膜的溅射靶结构。溅射靶包括具有包含Cu1-x（Se1-y-zSyTez）x的靶体组成的靶体，其中x的值大于或等于约0.5，y的值在大约0和大约0之间如图1所示，z的值在大约0和大约1之间，并且靶体组成中的Se，S和Te相的总量包含小于目标体组成的50体积％。

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