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1. 发明授权

US06492188B1 Monitor method for quality of metal ARC (antireflection coating) layer 有权
标题翻译：金属ARC（防反射涂层）质量监测方法
公开(公告)号：US06492188B1
公开(公告)日：2002-12-10
申请号：US09265962
申请日：1999-03-11
申请人： Tsai-Sen Lin , Bor-Shiun Wu , Chou-Shin Jou , Tings Wang
发明人： Tsai-Sen Lin , Bor-Shiun Wu , Chou-Shin Jou , Tings Wang
IPC分类号： G01R3126
CPC分类号： H01L22/24
摘要： The present invention relates to a monitor method for quality of metal Antireflection Coating (ARC) layer and, more particularly, to a fast and accurate monitor method for quality of metal ARC layer. By using of immersing a silicon wafer comprising an ARC layer into an acidic (such as a developer) or an alkalescent solution for about 200-300 seconds, according to the present invention, at weak points of the metal ARC layer there occur voids (defects) due to a Galvanic cell effect enhanced by these chemical solutions and then how many defects can be counted by a wafer defect inspector such as a KLA instrument so that quality of the metal ARC layer can be monitored by this defect number. Besides, Since the silicon wafer used as a sample for the wafer defect inspector simply comes from a production line, i.e. a developing process, rather than from other additional processing, said method allows for fast and accurately monitoring quality of the metal ARC layers.
摘要翻译：金属防反射涂层（ARC）层的质量监测方法技术领域本发明涉及金属防反射涂层（ARC）层的质量监测方法，更具体地说，涉及金属ARC层质量的快速准确的监测方法。通过根据本发明，将包含ARC层的硅晶片浸入酸性（例如显影剂）或碱性溶液中约200-300秒，在金属ARC层的弱点处发生空隙（缺陷）由于这些化学溶液增强的电化学电池效应，然后可以通过诸如KLA仪器的晶片缺陷检查器计数多少个缺陷，以便可以通过该缺陷数来监测金属ARC层的质量。此外，由于用作晶片缺陷检查器的样品的硅晶片简单地来自生产线，即显影过程，而不是来自其他附加处理，所述方法允许快速且准确地监测金属ARC层的质量。

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