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1. 发明申请

US20130046919A1 NON-VOLATILE MEMORY SYSTEM 有权
标题翻译：非易失性存储器系统
公开(公告)号：US20130046919A1
公开(公告)日：2013-02-21
申请号：US13563048
申请日：2012-07-31
申请人： Wan-soo Choi , Hee-tak Shin , Won-jin Lim , Bong-gwan Seol , Jun-seok Park
发明人： Wan-soo Choi , Hee-tak Shin , Won-jin Lim , Bong-gwan Seol , Jun-seok Park
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7207
摘要： In one embodiment, a memory system includes a memory device with a first memory and a second memory, and a controller configured to control storing of data in the memory device. The controller is configured to control an (N−1)th piece of meta data to be stored in the second memory when an Nth piece of user data is stored in the first memory or control the Nth piece of the user data to be stored in the second memory when the (N−1)th piece of the meta data is stored in the first memory, where N denotes a natural number equal to or greater than ‘1’. Also, a time period of storing the Nth piece of the user data is controlled to partially or entirely overlap with a time period of storing the (N−1)th piece of the meta data.
摘要翻译：在一个实施例中，存储器系统包括具有第一存储器和第二存储器的存储器件，以及被配置为控制数据存储在存储器件中的控制器。控制器被配置为当第N个用户数据存储在第一存储器中时，控制要存储在第二存储器中的第（N-1）个元数据，或者控制要存储的第N个用户数据当第（N-1）个元数据被存储在第一存储器中时，第二存储器，其中N表示等于或大于1的自然数。另外，存储第N个用户数据的时间段被控制为与存储第（N-1）个元数据的时间段部分或全部重叠。

2. 发明授权

US08125825B2 Memory system protected from errors due to read disturbance and reading method thereof 有权
标题翻译：存储器系统由于读取干扰及其读取方法而被保护免于错误
公开(公告)号：US08125825B2
公开(公告)日：2012-02-28
申请号：US12791077
申请日：2010-06-01
申请人： Bong-Gwan Seol
发明人： Bong-Gwan Seol
IPC分类号： G11C11/34 , G11C16/04 , G11C8/00
CPC分类号： G11C16/349 , G11C16/3418 , G11C16/3431
摘要： A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
摘要翻译：读取包括闪速存储器的存储器系统的方法包括：从闪存的第一块中的页面读取数据，每次从页面读取数据时递增计数器，以存储对应的数量的读出周期闪存，并且当计数器超过参考数量的读出周期时，将数据从闪存的第一块复制到闪速存储器的第二块。来自第一块的数据包括来自页面的数据。

3. 发明申请

US20090034328A1 MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND READING METHOD THEREOF 有权
标题翻译：由于阅读障碍及其阅读方法而受到错误保护的记忆系统
公开(公告)号：US20090034328A1
公开(公告)日：2009-02-05
申请号：US12181408
申请日：2008-07-29
申请人： Bong-Gwan Seol
发明人： Bong-Gwan Seol
IPC分类号： G11C16/26
CPC分类号： G11C16/349 , G11C16/3418 , G11C16/3431
摘要： A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
摘要翻译：读取包括闪速存储器的存储器系统的方法包括：从闪存的第一块中的页面读取数据，每次从页面读取数据时递增计数器，以存储相应数量的读出周期闪存，并且当计数器超过参考数量的读出周期时，将数据从闪存的第一块复制到闪速存储器的第二块。来自第一块的数据包括来自页面的数据。

4. 发明授权

US08984212B2 Non-volatile memory system 有权
标题翻译：非易失性存储器系统
公开(公告)号：US08984212B2
公开(公告)日：2015-03-17
申请号：US13563048
申请日：2012-07-31
申请人： Wan-soo Choi , Hee-tak Shin , Won-jin Lim , Bong-gwan Seol , Jun-seok Park
发明人： Wan-soo Choi , Hee-tak Shin , Won-jin Lim , Bong-gwan Seol , Jun-seok Park
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7201 , G06F2212/7207
摘要： In one embodiment, a memory system includes a memory device with a first memory and a second memory, and a controller configured to control storing of data in the memory device. The controller is configured to control an (N−1)th piece of meta data to be stored in the second memory when an Nth piece of user data is stored in the first memory or control the Nth piece of the user data to be stored in the second memory when the (N−1)th piece of the meta data is stored in the first memory, where N denotes a natural number equal to or greater than ‘1’. Also, a time period of storing the Nth piece of the user data is controlled to partially or entirely overlap with a time period of storing the (N−1)th piece of the meta data.
摘要翻译：在一个实施例中，存储器系统包括具有第一存储器和第二存储器的存储器件，以及被配置为控制数据存储在存储器件中的控制器。控制器被配置为当第N个用户数据存储在第一存储器中时，控制要存储在第二存储器中的第（N-1）个元数据，或者控制要存储的第N个用户数据当第（N-1）个元数据被存储在第一存储器中时，第二存储器，其中N表示等于或大于'1'的自然数。此外，存储第N条用户数据的时间段被控制为与存储第（N-1）个元数据的时间段部分或全部重叠。

5. 发明授权

US07751238B2 Memory system protected from errors due to read disturbance and reading method thereof 有权
标题翻译：存储器系统由于读取干扰及其读取方法而被保护免于错误
公开(公告)号：US07751238B2
公开(公告)日：2010-07-06
申请号：US12181408
申请日：2008-07-29
申请人： Bong-Gwan Seol
发明人： Bong-Gwan Seol
IPC分类号： G11C11/34 , G11C16/04 , G11C16/06 , G11C8/00
CPC分类号： G11C16/349 , G11C16/3418 , G11C16/3431
摘要： A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
摘要翻译：读取包括闪速存储器的存储器系统的方法包括：从闪存的第一块中的页面读取数据，每次从页面读取数据时递增计数器，以存储相应数量的读出周期闪存，并且当计数器超过参考数量的读出周期时，将数据从闪存的第一块复制到闪速存储器的第二块。来自第一块的数据包括来自页面的数据。

6. 发明授权

US09431117B2 Memory system and read reclaim method thereof 有权
标题翻译：存储系统及读取回收方法
公开(公告)号：US09431117B2
公开(公告)日：2016-08-30
申请号：US14037658
申请日：2013-09-26
申请人： Young Woo Jung , Hwan-Chung Kim , Kyoungkuy Park , Eunju Park , Bong-Gwan Seol
发明人： Young Woo Jung , Hwan-Chung Kim , Kyoungkuy Park , Eunju Park , Bong-Gwan Seol
IPC分类号： G06F12/02 , G11C16/26 , G06F11/10 , G11C11/56 , G11C16/10 , G11C29/52
CPC分类号： G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F12/0253 , G11C11/5628 , G11C11/5642 , G11C11/5671 , G11C16/10 , G11C16/26 , G11C29/52
摘要： A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
摘要翻译：一种存储器系统，包括：非易失性存储器件，包括由每个存储单元存储n位数据的存储器块形成的第一存储器区域;以及由每个存储单元存储m位数据的存储块形成的第二存储器区域，其中n和m是不同的整数以及被配置为控制非易失性存储器件的存储器控制器。存储器控制器被配置为执行读取操作，并且执行读取回收操作，其中第二存储器区域的目标存储器块的有效数据被传送到第一存储器区域的一个或多个存储器块，目标存储器块在读取操作期间选择。当目标存储器块的所有有效数据被传送到第一存储器区域的一个或多个存储器块时，读取回收操作被完成。

7. 发明申请

US20140101372A1 MEMORY SYSTEM AND READ RECLAIM METHOD THEREOF 有权
标题翻译：存储器系统及其读取方法
公开(公告)号：US20140101372A1
公开(公告)日：2014-04-10
申请号：US14037658
申请日：2013-09-26
申请人： YOUNG WOO JUNG , HWAN-CHUNG KIM , KYOUNGKUY PARK , EUNJU PARK , BONG-GWAN SEOL
发明人： YOUNG WOO JUNG , HWAN-CHUNG KIM , KYOUNGKUY PARK , EUNJU PARK , BONG-GWAN SEOL
IPC分类号： G06F12/02
CPC分类号： G06F11/1068 , G06F11/1072 , G06F12/0246 , G06F12/0253 , G11C11/5628 , G11C11/5642 , G11C11/5671 , G11C16/10 , G11C16/26 , G11C29/52
摘要： A memory system includes a nonvolatile memory device including a first memory area formed of memory blocks which store n-bit data per cell and a second memory area formed of memory blocks which store m-bit data per cell, where n and m are different integers, and a memory controller configured to control the nonvolatile memory device. The memory controller is configured to execute a read operation, and to execute a read reclaim operation in which valid data of a target memory block of the second memory area is transferred to one or more memory blocks of the first memory area, the target memory block selected during the read operation. The read reclaim operation is processed as complete when all the valid data of the target memory block is transferred to the one or more memory blocks of the first memory area.
摘要翻译：一种存储器系统，包括：非易失性存储器件，包括由每个存储单元存储n位数据的存储器块形成的第一存储器区域;以及由每个存储单元存储m位数据的存储块形成的第二存储器区域，其中n和m是不同的整数以及被配置为控制非易失性存储器件的存储器控制器。存储器控制器被配置为执行读取操作，并且执行读取回收操作，其中第二存储器区域的目标存储器块的有效数据被传送到第一存储器区域的一个或多个存储器块，目标存储器块在读取操作期间选择。当目标存储器块的所有有效数据被传送到第一存储器区域的一个或多个存储器块时，读取回收操作被完成。

8. 发明申请

US20100241796A1 MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND READING METHOD THEREOF 有权
标题翻译：由于阅读障碍及其阅读方法而受到错误保护的记忆系统
公开(公告)号：US20100241796A1
公开(公告)日：2010-09-23
申请号：US12791077
申请日：2010-06-01
申请人： Bong-Gwan SEOL
发明人： Bong-Gwan SEOL
IPC分类号： G06F12/00 , G06F12/02 , G06F12/16
CPC分类号： G11C16/349 , G11C16/3418 , G11C16/3431
摘要： A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
摘要翻译：读取包括闪速存储器的存储器系统的方法包括：从闪存的第一块中的页面读取数据，每次从页面读取数据时递增计数器，以存储相应数量的读出周期闪存，并且当计数器超过参考数量的读出周期时，将数据从闪存的第一块复制到闪速存储器的第二块。来自第一块的数据包括来自页面的数据。

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