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1. 发明授权

US08476103B2 Methods of fabricating organic thin film transistors 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08476103B2
公开(公告)日：2013-07-02
申请号：US13355940
申请日：2012-01-23
申请人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Bon Won Koo , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L27/283 , H01L51/0005 , H01L51/0558
摘要： Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
摘要翻译：公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

2. 发明授权

US07834352B2 Method of fabricating thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07834352B2
公开(公告)日：2010-11-16
申请号：US11972847
申请日：2008-01-11
申请人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
发明人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L31/00
CPC分类号： H01L51/0021 , B82Y10/00 , H01L51/0015 , H01L51/0046 , H01L51/0545
摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要翻译：制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过解决过程。在该方法中，简化了制造并降低了制造成本。由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

3. 发明授权

US07622323B2 Method for increasing mobility of an organic thin film transistor by application of an electric field 有权
标题翻译：通过施加电场来提高有机薄膜晶体管的迁移率的方法
公开(公告)号：US07622323B2
公开(公告)日：2009-11-24
申请号：US11196382
申请日：2005-08-04
申请人： Chang Ju Kim , Eun Jeong Jeong , Sang Yoon Lee , Bon Won Koo , Eun Kyung Lee
发明人： Chang Ju Kim , Eun Jeong Jeong , Sang Yoon Lee , Bon Won Koo , Eun Kyung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0541 , H01L51/0002 , H01L51/0036 , H01L51/0516 , H01L51/0545
摘要： A method for fabricating an organic thin film transistor by application of an electric field. The method includes the steps of fabricating a common organic thin film transistor including a gate electrode, a gate insulating layer, an organic semiconductor layer and source/drain electrodes laminated on a substrate, and applying a direct current (DC) voltage to between the source and drain electrodes and applying an alternating current (AC) voltage to the gate electrode. The characteristics of an organic thin film transistor deteriorated after lamination of the respective layers can be recovered by the simple treatment. Therefore, the OTFT fabricated by the method has low threshold voltage, low driving voltage, high charge carrier mobility, and high Ion/Ioff ratio.
摘要翻译：一种通过施加电场来制造有机薄膜晶体管的方法。该方法包括以下步骤：制造包括栅电极，栅极绝缘层，有机半导体层和层压在衬底上的源极/漏极之间的公共有机薄膜晶体管，以及在源极之间施加直流（DC）电压和漏电极，并向栅电极施加交流（AC）电压。通过简单的处理可以回收各层的层叠后劣化的有机薄膜晶体管的特性。因此，该方法制造的OTFT具有低阈值电压，低驱动电压，高电荷载流子迁移率和高离子/离子比率。

4. 发明申请

US20080135839A1 Method of Fabricating Thin Film Transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20080135839A1
公开(公告)日：2008-06-12
申请号：US11972847
申请日：2008-01-11
申请人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
发明人： Tae Woo Lee , Young Hun Byun , Yi Yeol Lyu , Sang Yoon Lee , Bon Won Koo
IPC分类号： H01L27/13 , H01L21/326
CPC分类号： H01L51/0021 , B82Y10/00 , H01L51/0015 , H01L51/0046 , H01L51/0545
摘要： A method of fabricating a thin film transistor, in which source and drain electrodes are formed through a solution process, even all stages which include formation of electrodes on a substrate, formation of an insulator layer, and formation of an organic semiconductor layer are conducted through the solution process. In the method, the fabrication is simplified and a fabrication cost is reduced. It is possible to apply the organic thin film transistor to integrated circuits requiring high speed switching because of high charge mobility.
摘要翻译：制造薄膜晶体管的方法，其中源极和漏极通过溶液处理形成，甚至包括在衬底上形成电极的所有阶段，形成绝缘体层以及形成有机半导体层通过解决过程。在该方法中，简化了制造并降低了制造成本。由于高电荷迁移率，有机薄膜晶体管可能需要高速切换的集成电路。

5. 发明申请

US20070194305A1 Organic thin film transistor comprising fluorine-based polymer thin film and method for fabricating the same 有权
标题翻译：含氟基聚合物薄膜的有机薄膜晶体管及其制造方法
公开(公告)号：US20070194305A1
公开(公告)日：2007-08-23
申请号：US11606287
申请日：2006-11-30
申请人： Joo Young Kim , Bon Won Koo , Eun Kyung Lee , Sang Yoon Lee , Bang Lin Lee
发明人： Joo Young Kim , Bon Won Koo , Eun Kyung Lee , Sang Yoon Lee , Bang Lin Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0036 , H01L51/052 , H01L51/0545
摘要： Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.
摘要翻译：公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和有机半导体层。还提供了制造这种有机薄膜晶体管的方法。根据示例性实施例，由于源极/漏极之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和I / 有机半导体层。此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。

6. 发明授权

US07005674B2 Organic thin film transistor comprising multi-layered gate insulator 有权
标题翻译：包括多层栅极绝缘体的有机薄膜晶体管
公开(公告)号：US07005674B2
公开(公告)日：2006-02-28
申请号：US10769816
申请日：2004-02-03
申请人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Young Hun Byun , Bon Won Koo , In Nam Kang
发明人： Sang Yoon Lee , Jong Jin Park , Yi Yeol Lyu , Young Hun Byun , Bon Won Koo , In Nam Kang
IPC分类号： H01L35/24 , H01L29/76
CPC分类号： H01L51/0545 , H01L21/31604 , H01L21/31691 , H01L51/0052 , H01L51/0529 , H01L51/0537
摘要： An organic thin film transistor (OTFT) comprising a gate electrode, a gate insulating film, an organic active layer and a source/drain electrode, or a gate electrode, a gate insulating film, a source/drain electrode and an organic active layer, sequentially formed on a substrate, wherein the gate insulating film is a multi-layered insulator comprising a first layer of a high dielectric material and a second layer of an insulating organic polymer compatible with the organic active layer, the second layer being positioned directly under the organic active layer. The OTFT of the present invention shows low threshold and driving voltages, high charge mobility, and high Ion/Ioff, and it can be prepared by a wet process.
摘要翻译：一种有机薄膜晶体管（OTFT），包括栅极，栅极绝缘膜，有机活性层和源极/漏极，或栅电极，栅极绝缘膜，源/漏电极和有机活性层，依次形成在基板上，其中栅极绝缘膜是包括高介电材料的第一层和与有机活性层相容的绝缘有机聚合物的第二层的多层绝缘体，第二层位于有机活性层。本发明的OTFT显示低阈值和驱动电压，高电荷迁移率和高/低电流，并且可以通过湿法制备。

7. 发明授权

US08617709B2 Functionalized metal nanoparticle, buffer layer including the same and electronic device including the buffer layer 有权
标题翻译：官能化金属纳米颗粒，包括其的缓冲层和包括缓冲层的电子器件
公开(公告)号：US08617709B2
公开(公告)日：2013-12-31
申请号：US12078778
申请日：2008-04-04
申请人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
发明人： Hyun Sik Moon , Jong Jin Park , Bon Won Koo , Jung Seok Hahn , Do Hwan Kim
IPC分类号： B32B5/16
CPC分类号： C07D271/113 , B82Y20/00 , C07B2200/11 , C07F7/1804 , H01L51/5088 , H01L51/5092 , H01L2251/5369 , Y10T428/25 , Y10T428/256 , Y10T428/2982 , Y10T428/2991
摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.
摘要翻译：本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性在电极上形成缓冲层，从而提高电子器件的效率。

8. 发明申请

US20120122275A1 METHODS OF FABRICATING ORGANIC THIN FILM TRANSISTORS 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US20120122275A1
公开(公告)日：2012-05-17
申请号：US13355940
申请日：2012-01-23
申请人： Bon Won KOO , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Bon Won KOO , Joon Yong Park , Jung Seok Hahn , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： H01L51/05
CPC分类号： H01L51/0512 , H01L27/283 , H01L51/0005 , H01L51/0558
摘要： Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.
摘要翻译：公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

9. 发明申请

US20090045396A1 Composition for forming passivation layer and organic thin film transistor comprising the passivation layer 有权
标题翻译：用于形成钝化层的组合物和包含钝化层的有机薄膜晶体管
公开(公告)号：US20090045396A1
公开(公告)日：2009-02-19
申请号：US12078403
申请日：2008-03-31
申请人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
发明人： Jung Seok Hahn , Do Hwan Kim , Bon Won Koo , Sang Yoon Lee , Hyun Sik Moon
IPC分类号： H01L51/05 , G03F7/00 , H01L51/40 , C08F2/46
CPC分类号： G03F7/092 , G03F7/0046 , G03F7/038
摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.
摘要翻译：本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法有机薄膜晶体管和电子器件。有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案，从而表现出适用于电子设备的特性。

10. 发明申请

US20070194386A1 Methods of fabricating organic thin film transistors and organic thin film transistors fabricated using the same 有权
标题翻译：制造有机薄膜晶体管的方法和使用其制造的有机薄膜晶体管
公开(公告)号：US20070194386A1
公开(公告)日：2007-08-23
申请号：US11604826
申请日：2006-11-28
申请人： Jung Seok Hahn , Bon Won Koo , Joo Young Kim , Kook Min Han , Sang Yoon Lee
发明人： Jung Seok Hahn , Bon Won Koo , Joo Young Kim , Kook Min Han , Sang Yoon Lee
IPC分类号： H01L29/94
CPC分类号： H01L51/105 , H01L51/0036 , H01L51/0545 , H01L2251/308
摘要： Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.
摘要翻译：公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。

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