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1. 发明授权

US4906897A Image intensifier tube 失效
标题翻译：图像增压管
公开(公告)号：US4906897A
公开(公告)日：1990-03-06
申请号：US124388
申请日：1971-03-15
申请人： Barry M. Singer , Amos Picker
发明人： Barry M. Singer , Amos Picker
IPC分类号： H01J29/38 , H01J31/50
CPC分类号： H01J29/385 , H01J31/50 , H01J2231/50026 , H01J2231/50063
摘要： An image intensifier tube comprising an input screen assembly which includes a photosensitive semiconductor wafer having a substrate of one conductivity type material forming a plurality of P-N junctions with a planar array of mutually isolated islands of opposite conductivity type material, the islands protruding substantially equal distances from a common surface of the substrate, an opaque film of resistive material overlying the exposed areas of the islands and the common surface of the substrate, a layer of electroluminescent material disposed in abutting relationship with the distal ends of the islands and a layer of photoemissive material disposed in axially aligned relationship with the electroluminescent layer.
摘要翻译：一种图像增强管，包括输入屏幕组件，该输入屏幕组件包括光敏半导体晶片，该光敏半导体晶片具有一个导电类型材料的基板，该基板形成具有相互隔离的相反导电类型材料岛的平面阵列的多个PN结，衬底的公共表面，覆盖岛的暴露区域和衬底的共同表面的电阻材料的不透明膜，与岛的远端邻接关系设置的电致发光材料层和发光材料层与电致发光层轴向对准的关系。

2. 发明授权

US4639761A Combined bipolar-field effect transistor resurf devices 失效
标题翻译：双极场效应晶体管组合复用器件
公开(公告)号：US4639761A
公开(公告)日：1987-01-27
申请号：US792221
申请日：1985-10-25
申请人： Barry M. Singer , Rajsekhar Jayaraman
发明人： Barry M. Singer , Rajsekhar Jayaraman
IPC分类号： H01L21/74 , H01L27/07 , H01L29/06 , H01L29/08 , H01L29/10 , H01L29/78 , H01L27/02 , H01L29/90 , H01L29/00
CPC分类号： H01L29/7816 , H01L21/74 , H01L27/0716 , H01L29/0619 , H01L29/0847 , H01L29/1083 , Y10S257/901
摘要： A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. The doping concentration and thickness of the epitaxial surface layer are selected in accordance with the Reduced Surface Field (RESURF) technique. A highly-doped buried region of the second conductivity type is located beneath the base region of the device and is sandwiched between the epitaxial buried layer and the epitaxial surface layer. The advantages of such a device include a substantially reduced "on" resistance, a more compact and flexible configuration, improved switching characteristics, reduced base device current requirements, and improved isolation. The device may be further enhanced by providing a buried annular region of the first conductivity type around and in contact with the buried region, and a surface-adjoining annular region of the first conductivity may be provided adjacent the base region.
摘要翻译：组合双极场效应晶体管RESURF器件包括位于第一导电类型的半导体衬底与第一导电类型的第二导电类型的外延表面层与第一导电类型相反的第一导电类型的轻掺杂外延掩埋层。根据减少表面场（RESURF）技术选择外延表面层的掺杂浓度和厚度。第二导电类型的高掺杂掩埋区域位于器件的基极区域的下方并夹在外延掩埋层和外延表面层之间。这种器件的优点包括显着降低的“导通”电阻，更紧凑和灵活的配置，改进的开关特性，降低的基极器件电流要求以及改进的隔离。可以通过在掩埋区域周围提供第一导电类型的掩埋环形区域并且与掩埋区域接触来进一步增强该器件，并且可以在基极区域附近提供与第一导电性的表面相邻的环形区域。

3. 发明授权

US4609929A Conductivity-enhanced combined lateral MOS/bipolar transistor 失效
标题翻译：电导率增强型组合横向MOS /双极晶体管
公开(公告)号：US4609929A
公开(公告)日：1986-09-02
申请号：US684442
申请日：1984-12-21
申请人： Raj Jayaraman , Barry M. Singer
发明人： Raj Jayaraman , Barry M. Singer
IPC分类号： H01L21/331 , H01L21/8249 , H01L27/06 , H01L27/07 , H01L29/10 , H01L29/73 , H01L29/735 , H01L29/739 , H01L29/78 , H01L27/04 , H01L29/72
CPC分类号： H01L29/7816 , H01L27/0716 , H01L29/1087 , H01L29/735 , H01L29/7801 , H01L29/739 , Y10S257/901
摘要： A combined lateral MOS/bipolar transistor includes an intermediate semiconductor layer of the same conductivity type as the channel region which extends laterally from the channel region to beneath the drain contact region of the device. Additionally, a floating semiconductor layer of opposite conductivity type to that of the channel region is provided between the intermediate layer and the substrate of the device. Both the intermediate layer and the substrate are relatively lightly doped, to effectively isolate the floating layer from above and below. This structure substantially improves the operating chartacteristics of the device, thus permitting operation in both the source-follower and common-source modes, while also providing a compact structure which features a relatively low normalized "on" resistance.
摘要翻译：组合的横向MOS /双极晶体管包括与沟道区相同的导电类型的中间半导体层，该沟道区从沟道区域横向延伸到器件的漏极接触区域的下方。此外，在器件的中间层和衬底之间设置与沟道区相反的导电类型的浮动半导体层。中间层和衬底都相对轻掺杂，以有效地将浮层从上下分离。该结构大大改善了器件的工作特性，从而允许在源极跟随器和共源模式两者中工作，同时还提供具有相对低的标准化“导通”电阻的紧凑结构。

4. 发明授权

US4029965A Variable gain X-ray image intensifier tube 失效
标题翻译：可变增益X射线图像增强管
公开(公告)号：US4029965A
公开(公告)日：1977-06-14
申请号：US660728
申请日：1976-02-23
申请人： Allan Ivan Carlson , Barry M. Singer
发明人： Allan Ivan Carlson , Barry M. Singer
IPC分类号： H01J29/44 , H01J31/36 , G01T1/22
CPC分类号： H01J31/36 , H01J29/44
摘要： X-ray image intensifier tube comprises a silicon diode array imaging target which, on the electron bombarded side, is provided with a deeply diffused phosphorus n.sup.+ layer covered with a metallic buffer layer.
摘要翻译： X射线图像增强管包括硅二极管阵列成像靶，其在电子轰击侧上设置有被金属缓冲层覆盖的深度扩散的磷n +层。

5. 发明授权

US4939566A Semiconductor switch with parallel DMOS and IGT 失效
标题翻译：具有并联DMOS和IGT的半导体开关
公开(公告)号：US4939566A
公开(公告)日：1990-07-03
申请号：US115478
申请日：1987-10-30
申请人： Barry M. Singer , Gert W. Bruning , Satyendranath Mukherjee
发明人： Barry M. Singer , Gert W. Bruning , Satyendranath Mukherjee
IPC分类号： H01L29/78 , H01L27/088 , H01L29/739 , H02M3/158 , H03K17/00 , H03K17/082 , H03K17/567
CPC分类号： H03K17/0822 , H01L27/088 , H01L29/7393 , H02M3/1584 , H03K17/567 , H03K2217/0036
摘要： A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.

6. 发明授权

US4926074A Semiconductor switch with parallel lateral double diffused MOS transistor and lateral insulated gate transistor 失效
标题翻译：半导体开关具有并联横向双扩散MOS晶体管和横向绝缘栅晶体管
公开(公告)号：US4926074A
公开(公告)日：1990-05-15
申请号：US262564
申请日：1988-10-24
申请人： Barry M. Singer , Gert W. Bruning , Satyendranath Mukherjee
发明人： Barry M. Singer , Gert W. Bruning , Satyendranath Mukherjee
IPC分类号： H01L27/088 , H01L29/739 , H02M3/158 , H03K17/00 , H03K17/082 , H03K17/567
CPC分类号： H01L29/7393 , H01L27/088 , H02M3/1584 , H03K17/0822 , H03K17/567 , H03K2217/0036
摘要： A semiconductor switch comprising a lateral DMOS and a lateral IGT both of which can be fabricated in a monolithic integrated circuit. In operation the lateral DMOS stays on while the lateral IGT is switched off in order to reduce turn off power dissipation.
摘要翻译：一种半导体开关，包括横向DMOS和横向IGT，两者都可以制造在单片集成电路中。在操作中，横向DMOS保持接通，而侧向IGT被关闭以减少关断功率消耗。

7. 发明授权

US4542405A Method and apparatus for displaying and reading out an image 失效
标题翻译：用于显示和读出图像的方法和装置
公开(公告)号：US4542405A
公开(公告)日：1985-09-17
申请号：US505602
申请日：1983-06-20
申请人： Emil Arnold , Barry M. Singer
发明人： Emil Arnold , Barry M. Singer
IPC分类号： G01T1/00 , G01T1/26 , G03G15/22 , G21K4/00 , H04N7/18 , H04N3/02
CPC分类号： G01T1/26
摘要： An apparatus and technique are described for storing a latent radiation image on a photoconductor by way of charge produced on the photoconductor and absorption of light from an object transmitted onto the photoconductor. Read out is provided by scanning a light source over the photoconductor to create a photocurrent which activates a CRT read out device or is stored in an image recording system.
摘要翻译：描述了一种装置和技术，用于通过在感光体上产生的电荷和从传输到光电导体上的物体吸收光而将潜辐射图像存储在光电导体上。通过在光电导体上扫描光源以产生激活CRT读出装置或存储在图像记录系统中的光电流来提供读出。

8. 发明授权

US4139444A Method of reticulating a pyroelectric vidicon target 失效
标题翻译：网状热电伏icon靶的方法
公开(公告)号：US4139444A
公开(公告)日：1979-02-13
申请号：US859542
申请日：1977-12-12
申请人： Barry M. Singer , Yannick J. Thefaine
发明人： Barry M. Singer , Yannick J. Thefaine
IPC分类号： H01J9/233 , H01J29/45 , C23C15/00
CPC分类号： H01J29/458
摘要： A method of fabricating a pyroelectric vidicon target wherein a layer of pyroelectric material is attached to a substrate, reduced in thickness, reticulated, covered with an electron permeable support layer, removed from the substrate, and covered with a layer of silicon oxide on the side scanned by the electron beam.
摘要翻译：一种制造热释电磁体靶的方法，其中热电材料层附着到基板上，厚度减小，网状，被电子透过性支撑层覆盖，从基板移除，并在一侧覆盖一层氧化硅由电子束扫描。

9. 发明授权

US4019084A Pyroelectric vidicon having a protective covering on the pyroelectric target 失效
标题翻译：热电监视器在热电靶上具有保护层
公开(公告)号：US4019084A
公开(公告)日：1977-04-19
申请号：US618768
申请日：1975-10-02
申请人： Thomas H. Conklin , Barry M. Singer
发明人： Thomas H. Conklin , Barry M. Singer
IPC分类号： H01J29/45 , H01J31/00
CPC分类号： H01J29/458
摘要： In a pyroelectric vidicon, the target is covered with a layer of vacuum compatible material which has a high secondary emission coefficient, a low first cross-over and low conductivity to prevent decomposition of the target.
摘要翻译：在热电摄像机中，目标被一层真空相容的材料覆盖，其具有高的二次发射系数，低的第一交叉和低电导率，以防止靶分解。

10. 发明授权

US5243214A Power integrated circuit with latch-up prevention 失效
标题翻译：具有闭锁预防功能的集成电路
公开(公告)号：US5243214A
公开(公告)日：1993-09-07
申请号：US868746
申请日：1992-04-14
申请人： Johnny K. O. Sin , Barry M. Singer , Satyendranath Mukherjee
发明人： Johnny K. O. Sin , Barry M. Singer , Satyendranath Mukherjee
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/092
CPC分类号： H01L27/0921 , H01L27/0248
摘要： A power integrated circuit includes a substrate with an overlying epitaxial surface layer of opposite conductivity type. A semiconductor power device, such as a high-power diode or lateral MOS transistor, is located in the epitaxial layer and forms a p-n junction diode with the substrate. The power integrated circuit also includes a separate semiconductor well region in the epitaxial layer, in which one or more low-power semiconductor circuit elements are formed. In order to minimize the problem of latch up in the low-power circuit elements due to the injection of minority carriers from the substrate, the power integrated circuit is provided with a collector region and an isolation region between the power device and the well region having the low-power circuit elements.

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