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1. 发明授权

US06780765B2 Integrated circuit trenched features and method of producing same 失效
标题翻译：集成电路沟槽特征及其制造方法
公开(公告)号：US06780765B2
公开(公告)日：2004-08-24
申请号：US10101905
申请日：2002-03-19
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L2144
CPC分类号： H01L21/288 , H01L21/76877 , H01L23/53228 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal processing method is provided for growing a polycrystalline film by preferably chemical vapor deposition (CVD) from a suitable precursor gas or gases on a substrate which has been coated with seeds, preferably of nanocrystal size, of the metal material. The nanocrystal seeds serve as a template for the structure of the final polycrystalline film. The density of the seeds and the thickness of the grown polycrystalline film determine the grain size of the polycrystalline film at the surface of said film. CVD onto the seeds to produce the polycrystalline film avoids the recrystallization step generally necessary for the formation of a polycrystalline film, and thus allows for the growth of polycrystalline films at reduced temperatures.
摘要翻译：提供一种金属加工方法，用于通过优选化学气相沉积（CVD）从已经涂覆有金属材料的种子，优选纳米晶体尺寸的基底上的合适的前体气体生长多晶膜。纳米晶体种子用作最终多晶膜结构的模板。种子的密度和生长的多晶膜的厚度决定了所述膜的表面处的多晶膜的晶粒尺寸。种子上的CVD以产生多晶膜避免了形成多晶膜所需的重结晶步骤，从而允许在降低的温度下生长多晶膜。

2. 发明授权

US5755988A Dibasic acid based phase change material compositions 失效
标题翻译：基于二元酸的相变材料组成
公开(公告)号：US5755988A
公开(公告)日：1998-05-26
申请号：US702821
申请日：1996-08-23
申请人： George A. Lane , Avery N. Goldstein
发明人： George A. Lane , Avery N. Goldstein
IPC分类号： C09K5/06
CPC分类号： C09K5/063
摘要： A process for moderating the thermal energy content of a body with a container enclosing a phase change material (PCM) is detailed. The phase change material comprises a high molecular weight dibasic organic acid and mixtures thereof. Miscible aliphatic and aryl monobasic acids are also suitable as PCM constituents. The PCM is capable of absorbing thermal energy from a variety of bodies including air, heat transfer fluids, combustion reactions, radiation sources and the like. In the course of absorbing thermal energy the PCM undergoes a reversible melt. Upon the PCM being exposed to a temperature below its melting temperature, the PCM releases the stored latent heat of fusion energy absorbed upon melting and undergoes a reversible freeze.
摘要翻译：详细说明了用封闭相变材料（PCM）的容器调节身体的热能含量的方法。相变材料包括高分子量二元有机酸及其混合物。可混溶的脂族和芳基一元酸也适合作为PCM组分。 PCM能够从各种物体吸收热能，包括空气，传热流体，燃烧反应，辐射源等。在吸收热能的过程中，PCM经历可逆的熔体。当PCM暴露于低于其熔融温度的温度时，PCM释放储存的熔化时吸收的潜热潜热并经历可逆冻结。

3. 发明授权

US06774036B2 Integrated circuit trenched features and method of producing same 失效
公开(公告)号：US06774036B2
公开(公告)日：2004-08-10
申请号：US10440612
申请日：2003-05-19
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L2144
CPC分类号： H01L23/53228 , H01L21/288 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The formation of microelectronic structures in trenches and vias of an integrated circuit wafer are described using nanocrystal solutions. A nanocrystal solution is applied to flood the wafer surface. The solvent penetrates the trench recesses within the wafer surface. In the process, nanocrystals dissolved or suspended in the solution are carried into these regions. The solvent volatilizes more quickly from the wafer plateaus as compared to the recesses causing the nanocrystals to become concentrated in the shrinking solvent pools within the recesses. The nanocrystals become stranded in the dry trenches. Heating the wafer to a temperature sufficient to sinter or melt the nanocrystals results in the formation of bulk polycrystalline domains. Heating is also carried out concurrently with nanocrystals solution deposition. Copper nanocrystals of less than about 5 nanometers are particularly well suited for formation of interconnects at temperatures of less than 350 degrees Celsius.

4. 发明授权

US06361660B1 Photoelectrochemical device containing a quantum confined group IV semiconductor nanoparticle 有权
标题翻译：含有量子界限IV族半导体纳米粒子的光电化学器件
公开(公告)号：US06361660B1
公开(公告)日：2002-03-26
申请号：US09567109
申请日：2000-05-08
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： C07C100
CPC分类号： B01D53/885 , B01J19/122 , C01B3/042 , C01B3/26 , C01B13/0207 , C01B17/66 , C01D5/00 , Y02E60/364 , Y02P20/135
摘要： A process for reacting a molecule using light as an energy source is described which comprises exposing the molecule to a catalyst material, the catalyst material in contact with an illuminated, quantum confined Group IV semiconductor domain of silicon or germanium. The Group IV semiconductor domain having a band gap greater than bulk silicon and sufficiently large for reacting the molecule. The process is particularly useful in decomposing water into hydrogen and oxygen, as well as photocatalytically degrading pollutants in a waste stream. A device based on a Group IV semiconductor nanoparticles for conducting photo electrochemistry is also disclosed.
摘要翻译：描述了使用光作为能量源的分子的反应方法，其包括使分子暴露于催化剂材料，催化剂材料与硅或锗的被照射的量子限制的IV族半导体区域接触。 IV族半导体领域的带隙大于体硅，并且足够大以使分子反应。该方法在将水分解成氢气和氧气以及光催化降解废物流中的污染物时特别有用。还公开了一种用于进行光电化学的基于IV族半导体纳米颗粒的器件。

5. 发明授权

US06277740B1 Integrated circuit trenched features and method of producing same 失效
标题翻译：集成电路沟槽特征及其制造方法
公开(公告)号：US06277740B1
公开(公告)日：2001-08-21
申请号：US09373295
申请日：1999-08-12
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L2144
CPC分类号： H01L23/53228 , H01L21/288 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The formation of microelectronic structures in trenches and vias of an integrated circuit wafer are described using nanocrystal solutions. A nanocrystal solution is applied to flood the wafer surface. The solvent penetrates the trench recesses within the wafer surface. In the process, nanocrystals dissolved or suspended in the solution are carried into these regions. The solvent volatilizes more quickly from the wafer plateaus as compared to the recesses causing the nanocrystals to become concentrated in the shrinking solvent pools within the recesses. The nanocrystals become stranded in the dry trenches. Heating the wafer to a temperature sufficient to sinter or melt the nanocrystals results in the formation of bulk polycrystalline domains. Heating is also carried out concurrently with nanocrystals solution deposition. Copper nanocrystals of less than about 5 nanometers are particularly well suited for formation of interconnects at temperatures of less than 350 degrees Celcius.
摘要翻译：使用纳米晶体解决方案描述了集成电路晶片的沟槽和通孔中微电子结构的形成。应用纳米晶体溶液来淹没晶片表面。溶剂渗透晶片表面内的沟槽凹槽。在此过程中，将溶解或悬浮在溶液中的纳米晶体进入这些区域。与凹部相比，溶剂从晶片平台更快地挥发，导致纳米晶体在凹陷内的收缩溶剂池中变浓。纳米晶体滞留在干沟中。将晶片加热到足以烧结或熔化纳米晶体的温度导致大块多晶畴的形成。加热也与纳米晶溶液沉积同时进行。小于约5纳米的铜纳米晶体特别适用于在小于350摄氏度的温度下形成互连。

6. 发明授权

US5670279A Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same 失效
标题翻译：衍生自纳米晶体前体的平版印刷曝光掩模及其制造方法
公开(公告)号：US5670279A
公开(公告)日：1997-09-23
申请号：US512167
申请日：1995-08-07
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L21/20 , C23C26/02 , G03F1/22 , H01L21/027 , H01L21/208 , G03F9/00
CPC分类号： G03F1/22 , C23C26/02
摘要： A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.
摘要翻译：在本发明中描述了适用于x射线光刻的高分辨率曝光掩模及其制造方法。将电子致密材料的纳米晶体优选作为胶体溶液施加到低电子密度衬底的表面，以形成约10纳米的细微特征。与大量材料相比，与纳米晶体相关的降低的熔融和烧结温度允许使用更温和的加工条件。导致不同层之间的界面应力减小。

7. 发明授权

US5576248A Group IV semiconductor thin films formed at low temperature using nanocrystal precursors 失效
标题翻译：使用纳米晶体前体在低温下形成的IV族半导体薄膜
公开(公告)号：US5576248A
公开(公告)日：1996-11-19
申请号：US217160
申请日：1994-03-24
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L21/20 , C23C26/02 , G03F1/22 , H01L21/208
CPC分类号： G03F1/22 , C23C26/02 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02667
摘要： Thin films of the Group IV materials silicon and germanium are produced in the range of 2.5 to 25 nm thick from nanocrystal precursors. According to the invention a solid, continuous film of silicon or germanium is formed by depositing a contiguous layer of nanocrystals of the semi-conductor materials onto a substrate, then heating the layer to a temperature below the bulk melting temperature which is nonetheless adequate to melt the nanocrystals and form a continuous liquid thin film upon cooling. The resulting thin film may be doped or intrinsic. The lower processing temperatures make it possible to form these thin semi-conductor films with less stringent thermal requirements on the underlayers, substrates and other related structures, thus supporting applications in microelectronics, solar conversion and so forth.
摘要翻译：第IV族材料的硅和锗的薄膜从纳米晶体前体制备在2.5至25nm厚的范围内。根据本发明，通过将半导体材料的连续的纳米晶体层沉积到衬底上而形成硅或锗的固体连续薄膜，然后将该层加热至低于本体熔融温度的温度，该温度仍足以熔化纳米晶体，并在冷却时形成连续的液体薄膜。所得薄膜可以是掺杂的或固有的。较低的加工温度使得可以在衬底，衬底和其他相关结构上形成对这些薄的半导体膜的热要求较低，从而支持微电子学，太阳能转换等领域的应用。

8. 发明授权

US5491114A Method of making large-area semiconductor thin films formed at low temperature using nanocrystal presursors 失效
标题翻译：使用纳米晶体预制器制造在低温下形成大面积半导体薄膜的方法
公开(公告)号：US5491114A
公开(公告)日：1996-02-13
申请号：US217162
申请日：1994-03-24
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： H01L21/20
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02601 , H01L21/02628
摘要： A continuous semiconductor thin film is formed by providing a sheet of a substrate material and applying a continuous layer of nanocrystals of the semiconductor material onto the substrate. The layer of nanocrystals is melted at a temperature below that of the bulk, but which is nonetheless adequate to melt the nanocrystals and cause them to fuse into a continuous thin film which forms a solid upon cooling. The nanocrystals may be sprayed onto the substrate, either from the liquid or gas phase. The substrate sheet is preferably tensioned during the application of the nanocrystalline layer, for example, with a set of rollers is used to provide the tensioning at a predetermined feed rate.
摘要翻译：通过提供衬底材料片并将半导体材料的纳米晶体的连续层施加到衬底上来形成连续的半导体薄膜。纳米晶体层在低于本体温度的温度下熔化，但仍然足以熔化纳米晶体并使其熔化成在冷却时形成固体的连续薄膜。可以从液相或气相中将纳米晶体喷涂到基底上。衬底片优选在施加纳米晶层期间被拉伸，例如，使用一组辊以预定的进料速率提供张紧。

9. 发明授权

US5262357A Low temperature thin films formed from nanocrystal precursors 失效
标题翻译：由纳米晶体前体形成的低温薄膜
公开(公告)号：US5262357A
公开(公告)日：1993-11-16
申请号：US796242
申请日：1991-11-22
申请人： A. Paul Alivisatos , Avery N. Goldstein
发明人： A. Paul Alivisatos , Avery N. Goldstein
IPC分类号： H01L21/20 , H01L21/208 , H01L21/368 , H01L21/00 , H01L21/02 , H01L21/469
CPC分类号： H01L21/02546 , H01L21/02376 , H01L21/02428 , H01L21/02557 , H01L21/02601 , H01L21/02628
摘要： Nanocrystals of semiconductor compounds are produced. When they are applied as a contiguous layer onto a substrate and heated they fuse into a continuous layer at temperatures as much as 250, 500, 750 or even 1000.degree. K below their bulk melting point. This allows continuous semiconductor films in the 0.25 to 25 nm thickness range to be formed with minimal thermal exposure.
摘要翻译：生产半导体化合物的纳米晶体。当它们作为连续层施加到基底上并加热时，它们在其体积熔点以下的温度高达250,500,750甚至1000K的温度下熔合成连续层。这允许以最小的热暴露形成在0.25至25nm厚度范围内的连续半导体膜。

10. 发明申请

US20100112396A1 FIELD HYDROGEN GENERATION SYSTEM 审中-公开
标题翻译：现场氢气发生系统
公开(公告)号：US20100112396A1
公开(公告)日：2010-05-06
申请号：US12594123
申请日：2008-03-31
申请人： Avery N. Goldstein
发明人： Avery N. Goldstein
IPC分类号： B01J19/08 , H01M8/04 , F01D15/00
CPC分类号： C25B1/003 , C25B9/00 , Y02P20/135
摘要： A field hydrogen generation system. Includes a flexible housing transparent to visible light and a photoelectrochemical cell adapted to be received within a volume of the housing. A quantity of feedstock liquid within the housing is in contact with said photoelectrochemical cell. A conduit is in fluid communication between the volume of the housing and a hydrogen collection vessel.
摘要翻译：现场氢气发生系统。包括对可见光透明的柔性外壳和适于容纳在外壳体积内的光电化学电池。壳体内的原料液体量与所述光电化学电池接触。导管在壳体的体积和氢采集容器之间流体连通。

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