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1. 发明授权

US08657085B2 Air damper 有权
标题翻译：空气阻尼器
公开(公告)号：US08657085B2
公开(公告)日：2014-02-25
申请号：US13261006
申请日：2010-05-12
申请人： Atsushi Ogawa
发明人： Atsushi Ogawa
IPC分类号： F16F9/36
CPC分类号： F16F9/0218 , F16F9/3221 , F16F9/3415
摘要： An air damper capable of stabilizing a damping force of the air damper is obtained.When a rod member (16) is pulled out of a cylinder member (20), a suction member (60) hits against the other side surface (56) of a piston member (30) so as to close an air passage (28), and an airflow path communicating between an air chamber (26) and an outside is only orifice portions (42). On the other hand, when the rod member (16) is pushed into the cylinder member (20), the suction member (60) moves away from the other side surface (56) of the piston member (30) so as to open the air passage (28). Consequently, compared to a conventional structure in which an O-ring rolls by a friction force with an inner peripheral surface of a cylinder so as to open or close the air passage, the air passage (28) can be opened and closed as intended so as to be capable of stabilizing the damping force.
摘要翻译：获得能够稳定空气阻尼器的阻尼力的空气阻尼器。当杆构件（16）从气缸构件（20）中被拉出时，抽吸构件（60）撞击活塞构件（30）的另一侧表面（56），以闭合空气通道（28）并且在空气室（26）和外部之间连通的气流路径仅仅是孔部分（42）。另一方面，当将杆构件（16）推入气缸构件（20）时，吸引构件（60）远离活塞构件（30）的另一侧面（56）移动，从而打开空气通道（28）。因此，与通过与气缸的内周面的摩擦力卷绕O形环以打开或关闭空气通道的常规结构相比，空气通道（28）可以按预期打开和关闭以便能够稳定阻尼力。

2. 发明授权

US08596430B2 Electrical shock absorber 有权
标题翻译：减震器
公开(公告)号：US08596430B2
公开(公告)日：2013-12-03
申请号：US13321094
申请日：2010-06-17
申请人： Atsushi Ogawa
发明人： Atsushi Ogawa
IPC分类号： F16F15/03
CPC分类号： B60G17/015 , B60G17/06 , B60G2300/60 , F16F15/03 , F16F15/035 , F16F2232/06 , H02P3/12
摘要： An electrical shock absorber 20 of the present embodiment includes a motor 21, which is rotated by approaching and separating motions between sprung and unsprung members which approach and separate from each other; and an electric circuit 50, which connects the electric terminals of the motor 21 so as to cause current to flow through the motor 21. The electric circuit 50 includes P-channel JFETs 56, 60. The gate of the P-channel JFET 56, 60 is connected to one electric terminal of the motor 21, and the source of the P-channel JFET 56, 60 is connected to the other electric terminal of the motor 21. Therefore, the induced voltage is applied to the gate. The induced voltage represents the stroke speed of the electrical shock absorber 20. Therefore, the gate voltage VGS is changed on the basis of the above-mentioned relative speed such that the gate voltage VGS increases with the stroke speed of the electrical shock absorber 20. By means of changing the gate voltage VGS in this manner, the magnitude of the induced current flowing through the electric circuit 50 is limited by the P-channel JFETs 56, 60 on the basis of the characteristic of the P-channel JFET 56, 60 in terms of change of drain-source current iDS with the gate voltage VGS.
摘要翻译：本实施例的减震器20包括电动机21，其通过接近和分离彼此接近和分离的弹簧和簧下构件之间的运动而旋转; 电路50连接电动机21的电端子以使电流流过电动机21.电路50包括P沟道JFET 56,60。P沟道JFET 56的栅极， 60连接到电动机21的一个电气端子，并且P沟道JFET 56,60的源极连接到电动机21的另一个电端子。因此，感应电压被施加到栅极。感应电压表示减震器20的冲程速度。因此，基于上述相对速度改变栅极电压VGS，使得栅极电压VGS随着减震器20的冲程速度而增加。通过以这种方式改变栅极电压VGS，流过电路50的感应电流的大小由P沟道JFET 56,60基于P沟道JFET 56,60的特性来限制就栅极电压VGS的漏极 - 源极电流iDS的变化而言。

3. 发明申请

US20130277684A1 NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR TRANSISTOR ELEMENT, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR STRUCTURE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT 有权
标题翻译：氮化物半导体结构，氮化物半导体发光元件，氮化物半导体晶体管元件，制造氮化物半导体结构的方法以及制造氮化物半导体元件的方法
公开(公告)号：US20130277684A1
公开(公告)日：2013-10-24
申请号：US13977456
申请日：2011-12-21
申请人： Masahiro Araki , Shinya Yoshida , Haruhisa Takiguchi , Atsushi Ogawa , Takao Kinoshita , Tohru Murata , Takeshi Funaki , Masayuki Hoteida
发明人： Masahiro Araki , Shinya Yoshida , Haruhisa Takiguchi , Atsushi Ogawa , Takao Kinoshita , Tohru Murata , Takeshi Funaki , Masayuki Hoteida
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L29/812 , H01L33/007 , H01L33/12 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.
摘要翻译：一种氮化物半导体结构，其中在具有凹部的基板上设置有第一氮化物半导体下层，在其表面设置有位于所述凹部之间的突出部，所述第一氮化物半导体下层具有至少6个第一倾斜面平面，突出部分的外侧的突出部分和第二氮化物半导体下层掩埋第一倾斜面面，氮化物半导体发光元件，氮化物半导体晶体管元件，氮化物半导体结构的制造方法和提供了制造氮化物半导体元件的方法。

4. 发明授权

US08556273B2 Vehicle suspension device 有权
标题翻译：车辆悬挂装置
公开(公告)号：US08556273B2
公开(公告)日：2013-10-15
申请号：US13698503
申请日：2010-05-19
申请人： Atsushi Ogawa
发明人： Atsushi Ogawa
IPC分类号： B60G17/015
CPC分类号： B60G17/0157 , B60G13/02 , B60G17/06 , B60G2202/20 , F16F15/03
摘要： Four electromagnetic shock absorbers (30) are provided with motors (40FL, 40FR, 40RL, 40RR). First current-carrying terminals (T1) of the motors (40FL, 40FR, 40RL, 40RR) are connected to one another by a ground line (61). Further, second current-carrying terminals (T2) of the motor (40FL) and the motor (40FR) are connected to each other by a front wheel roll damping line (62F). Second current-carrying terminals (T2) of the motor (40RL) and the motor (40RR) are connected to each other by a rear wheel roll damping line (62R). Second current-carrying terminals (T2) of the motor (40FL) and the motor (40RL) are connected to each other by a left wheel pitch damping line (63L). Second current-carrying terminals (T2) of the motor (40FR) and the motor (40RR) are connected to each other by a right wheel pitch damping line (63R). In this manner, appropriate damping forces can be generated with a simple configuration not only against vehicle bouncing but also against vehicle rolling and pitching.
摘要翻译：四个电磁减震器（30）设有电动机（40FL，40FR，40RL，40RR）。电动机（40FL，40FR，40RL，40RR）的第一通电端子（T1）通过接地线（61）彼此连接。此外，电动机（40FL）和电动机（40FR）的第二通电端子（T2）通过前轮滚动阻尼线（62F）彼此连接。电动机（40RL）和电动机（40RR）的第二通电端子（T2）通过后轮侧滚动阻尼线（62R）彼此连接。电动机（40FL）和电动机（40RL）的第二通电端子（T2）通过左车轮节距阻尼线（63L）彼此连接。电动机（40FR）和电动机（40RR）的第二通电端子（T2）通过右轮节距阻尼线（63R）彼此连接。以这种方式，可以以简单的构造产生适当的阻尼力，不仅可以防止车辆弹跳，而且可以抵抗车辆滚动和俯仰。

5. 发明授权

US08485593B2 Drain plug 有权
标题翻译：排水塞
公开(公告)号：US08485593B2
公开(公告)日：2013-07-16
申请号：US12923748
申请日：2010-10-06
申请人： Atsushi Ogawa , Tomoki Yamaguchi , Hajime Saito , Toshiya Ohba
发明人： Atsushi Ogawa , Tomoki Yamaguchi , Hajime Saito , Toshiya Ohba
IPC分类号： B65D39/04
CPC分类号： B62D25/24
摘要： A drain plug includes a head part arranged on a peripheral edge of a drain hole from a front side, and an engaging leg engaged with the peripheral edge of the drain hole from a back side. The engaging leg includes a frame wall extending in a direction in which a space between a pair of panels forming a body panel is widened; an opening part facing the a connecting part of the pair of panels of the body panel; engaging parts formed on both side walls of the frame wall, to be engaged with the peripheral edge of the drain hole from the back side; and a guide surface formed on a front wall of the frame wall, to guide the engaging parts to pass through the drain hole.
摘要翻译：排水塞包括从前侧布置在排水孔的周缘上的头部，以及从后侧与排水孔的周边边缘接合的接合腿。所述接合腿包括框架壁，所述框架壁沿着形成所述主体面板的一对面板之间的空间变宽的方向延伸; 面向所述主体板的所述一对面板的连接部的开口部; 形成在框架壁的两个侧壁上的接合部分将从后侧与排水孔的周边接合; 以及形成在框架壁的前壁上的引导表面，以引导接合部分通过排水孔。

6. 发明申请

US20110174288A1 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 审中-公开
标题翻译：氮化物半导体激光光源的制造方法以及氮化物半导体激光光源的制造装置
公开(公告)号：US20110174288A1
公开(公告)日：2011-07-21
申请号：US13064534
申请日：2011-03-30
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： F24B1/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

7. 发明授权

US07939433B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
公开(公告)号：US07939433B2
公开(公告)日：2011-05-10
申请号：US12656758
申请日：2010-02-16
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/20
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.

8. 发明申请

US20110077402A1 ADMINISTRATION OF DIPEPTIDYL PEPTIDASE INHIBITORS 审中-公开
标题翻译： DIPEPTIDYL PEPTIDASE抑制剂的施用
公开(公告)号：US20110077402A1
公开(公告)日：2011-03-31
申请号：US12965448
申请日：2010-12-10
申请人： Ronald J. Christopher , Paul Covington , Atsushi Ogawa
发明人： Ronald J. Christopher , Paul Covington , Atsushi Ogawa
IPC分类号： C07D401/04 , A61K31/506 , A61P35/00 , A61P37/00 , A61P31/18 , A61P3/10
CPC分类号： C07D401/04 , A61K31/4439 , A61K31/513 , A61K45/06 , A61K2300/00
摘要： Pharmaceutical compositions comprising 2-[6-(3-Amino-piperidin-1-yl)-3-methyl-2,4-dioxo-3,4-dihydro-2H-pyrimidin-1-ylmethyl]-4-fluoro-benzonitrile and pharmaceutically acceptable salts thereof are provided as well as kits and articles of manufacture comprising the pharmaceutical compositions as well as methods of using the pharmaceutical compositions.
摘要翻译：包含2- [6-（3-氨基 - 哌啶-1-基）-3-甲基-2,4-二氧代-3,4-二氢-2H-嘧啶-1-基甲基] -4-氟 - 苄腈的药物组合物提供其药学上可接受的盐以及包含药物组合物的试剂盒和制品以及使用该药物组合物的方法。

9. 发明授权

US07893446B2 Nitride semiconductor light-emitting device providing efficient light extraction 有权
标题翻译：氮化物半导体发光器件提供高效的光提取
公开(公告)号：US07893446B2
公开(公告)日：2011-02-22
申请号：US12022066
申请日：2008-01-29
申请人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
发明人： Atsushi Ogawa , Akio Aioi , Satoshi Komada , Hiroshi Nakatsu
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/32
摘要： A nitride semiconductor light-emitting device comprises a substrate, and a first n-type nitride semiconductor layer, an emission layer, a p-type nitride semiconductor layer, a metal layer and a second n-type nitride semiconductor layer stacked on the substrate successively from the side closer to the substrate, with an electrode provided on the surface of the second n-type nitride semiconductor layer or above the surface of the second n-type nitride semiconductor layer. The metal layer is preferably made of a hydrogen-storage alloy.
摘要翻译：氮化物半导体发光器件包括基板和第一n型氮化物半导体层，发射层，p型氮化物半导体层，金属层和第二n型氮化物半导体层，具有设置在第二n型氮化物半导体层的表面上或者在第二n型氮化物半导体层的表面上方的电极。金属层优选由储氢合金制成。

10. 发明授权

US07833834B2 Method for producing nitride semiconductor laser light source and apparatus for producing nitride semiconductor laser light source 有权
标题翻译：氮化物半导体激光光源的制造方法及氮化物半导体激光光源的制造装置
公开(公告)号：US07833834B2
公开(公告)日：2010-11-16
申请号：US11237946
申请日：2005-09-29
申请人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
发明人： Daisuke Hanaoka , Masaya Ishida , Atsushi Ogawa , Yoshihiko Tani , Takuro Ishikura
IPC分类号： H01L21/00
CPC分类号： H01S5/02212 , H01S5/0222 , H01S5/32341 , Y10T29/5176
摘要： A method for producing a nitride semiconductor laser light source is provided. The nitride semiconductor laser light source has a nitride semiconductor laser chip, a stem for mounting the laser chip thereon, and a cap for covering the laser chip. The laser chip is encapsulated in a sealed container composed of the stem and the cap. The method for producing this nitride semiconductor laser light source has a cleaning step of cleaning the surface of the laser chip, the stem, or the cap. In the cleaning step, the laser chip, the stem, or the cap is exposed with ozone or an excited oxygen atom, or baked by heat. The method also has, after the cleaning step, a capping step of encapsulating the laser chip in the sealed container composed of the stem and the cap. During the capping step, the cleaned surface of the laser chip, the stem, or the cap is kept clean. This method provides a long-life nitride semiconductor laser light source the light emission intensity of which is not easily reduced after a long period of use.
摘要翻译：提供一种生产氮化物半导体激光光源的方法。氮化物半导体激光光源具有氮化物半导体激光器芯片，用于在其上安装激光器芯片的杆和用于覆盖激光器芯片的盖。激光芯片被封装在由杆和盖组成的密封容器中。用于制造该氮化物半导体激光光源的方法具有清洁激光芯片，杆或盖的表面的清洁步骤。在清洁步骤中，激光芯片，阀杆或盖子暴露于臭氧或激发氧原子，或通过加热进行烘烤。该方法在清洁步骤之后还具有将激光芯片封装在由杆和盖组成的密封容器中的封盖步骤。在封盖步骤中，激光芯片，阀杆或盖子的清洁表面保持清洁。该方法提供了长期使用后其发光强度不容易降低的长寿命氮化物半导体激光光源。

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