会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Reverse current limit protection for active clamp converters
    • 有源钳位转换器的反向电流限制保护
    • US08593830B2
    • 2013-11-26
    • US13164689
    • 2011-06-20
    • Thong Anthony Huynh
    • Thong Anthony Huynh
    • H02M3/335
    • H02M3/33546H02M1/36
    • DC-to-DC converters are protected from damage by, among other things, monitoring and controlling forward and reverse currents in their transformer primary windings. The currents are discontinued if their values fall outside a predetermined range or if they flow during a portion of the switching cycle in a manner that would result in cross-conduction. Power switches in these converters are also protected from damage by adjusting the maximum duty cycles of these converters to vary with their input voltages. In this way, the maximum voltage across the power switches is kept within a relatively narrow range. These protective features can be combined in any number of ways to fit the application at hand.
    • 通过监控和控制其变压器初级绕组中的正向和反向电流,可以防止DC-DC转换器受到损坏。 如果它们的值落在预定范围之外,或者如果它们在切换周期的一部分期间以导致交叉传导的方式流动,则电流被停止。 这些转换器中的电源开关也可以通过调节这些转换器的最大占空比来改变其输入电压,从而免受损坏。 以这种方式,电源开关两端的最大电压保持在相对窄的范围内。 这些保护功能可以以多种方式组合,以适应手头的应用。
    • 4. 发明申请
    • REVERSE CURRENT LIMIT PROTECTION FOR ACTIVE CLAMP CONVERTERS
    • 有源钳位转换器的反向电流限制保护
    • US20110317451A1
    • 2011-12-29
    • US13164689
    • 2011-06-20
    • Thong Anthony Huynh
    • Thong Anthony Huynh
    • H02M3/335
    • H02M3/33546H02M1/36
    • DC-to-DC converters are protected from damage by, among other things, monitoring and controlling forward and reverse currents in their transformer primary windings. The currents are discontinued if their values fall outside a predetermined range or if they flow during a portion of the switching cycle in a manner that would result in cross-conduction. Power switches in these converters are also protected from damage by adjusting the maximum duty cycles of these converters to vary with their input voltages. In this way, the maximum voltage across the power switches is kept within a relatively narrow range. These protective features can be combined in any number of ways to fit the application at hand.
    • 通过监控和控制其变压器初级绕组中的正向和反向电流,可以防止DC-DC转换器受到损坏。 如果它们的值落在预定范围之外,或者如果它们在切换周期的一部分期间以导致交叉传导的方式流动,则电流被停止。 这些转换器中的电源开关也可以通过调节这些转换器的最大占空比来改变其输入电压,从而免受损坏。 以这种方式,电源开关两端的最大电压保持在相对窄的范围内。 这些保护功能可以以多种方式组合,以适应手头的应用。
    • 6. 发明授权
    • Low voltage or'ing circuits and methods with zero recovery time
    • 低电压或电路和零恢复时间的方法
    • US06891425B1
    • 2005-05-10
    • US10434956
    • 2003-05-09
    • Thong Anthony Huynh
    • Thong Anthony Huynh
    • H03K17/16H03K17/30H03K17/693H03K17/687
    • H03K17/166H03K17/302H03K17/693
    • Low voltage drop ORing circuits with zero recovery time and reverse current protection. In use, a MOSFET is coupled between a power supply and a load in a multiple power supply, single load system, or between a power supply and a load in a single power supply, multiple load system, or in both locations in multiple power supply, multiple load systems. A controller senses the current through the MOSFET, and turns the MOSFET off when the current falls below a predetermined threshold current. This allows time for circuit delays and the discharge of the gate of the MOSFET to turn the MOSFET off before the current through the MOSFET car reverse. Turn-on of the MOSFET when the current exceeds the threshold may be purposely slowed to avoid current spikes. Addition of another MOSFET controlled by the controller adds a hot swap capability and the control of the VC slew rate. Various other features and embodiments are disclosed, including various current sensing techniques and circuits using transistors other than MOSFETs.
    • 低压降ORing电路具有零恢复时间和反向电流保护。 在使用中,MOSFET耦合在多电源,单负载系统中的电源和负载之间,或者在单个电源,多个负载系统中的电源和负载之间,或者在多个电源中的两个位置 ,多重负载系统。 控制器感测通过MOSFET的电流,并且当电流下降到低于预定阈值电流时关闭MOSFET。 这允许电路延迟的时间和MOSFET的栅极的放电,以在MOSFET流过MOSFET的电流反向之前关断MOSFET。 当电流超过阈值时,MOSFET的导通可能有意减慢以避免电流尖峰。 由控制器控制的另一个MOSFET的添加增加了热插拔能力和V C / C压摆率的控制。 公开了各种其它特征和实施例,包括使用不同于MOSFET的晶体管的各种电流感测技术和电路。