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1. 发明授权

US07546670B2 Method for producing thermally matched probe assembly 失效
标题翻译：热匹配探针组件的制造方法
公开(公告)号：US07546670B2
公开(公告)日：2009-06-16
申请号：US11429419
申请日：2006-05-05
申请人： Timothy J. Dalton , Anna Karecki, legal representative , Samuel R. McKnight , George F. Walker
发明人： Simon M. Karecki
IPC分类号： B23P13/04 , H01R43/00
CPC分类号： G01R1/07371 , G01R3/00 , Y10T29/49117 , Y10T29/49204 , Y10T29/49208 , Y10T29/49217 , Y10T29/49995
摘要： A method to fabricate a high density, minimal pitch, thermally matched contactor assembly to maintain electrical contact with contact regions on fully processed semiconductors, preferably while still in wafer form, and throughout a range of temperatures. A guide plate and a contactor assembly for such use, comprising a substrate formed of a material having a coefficient of thermal expansion approximately equal to that of the device; and at least one hole in the guide plate for receiving an electrical contact (probe element) for contacting at least one respective region on said surface, said at least one hole being sized and shaped so as to accept said electrical contact, while allowing said electrical contact (probe element) to move with respect to said hole in said guide plate. The material can be one of silicon, borosilicate glass and cordierite.
摘要翻译：制造高密度，最小间距，热匹配的接触器组件的方法，以保持与完全处理的半导体上的接触区域的电接触，优选同时处于晶片形式，并且在整个温度范围内。一种用于这种用途的引导板和接触器组件，包括由具有大约等于该装置的热膨胀系数的材料形成的基底; 和引导板中的至少一个孔，用于接收用于接触所述表面上的至少一个相应区域的电接触（探针元件），所述至少一个孔的尺寸和形状被设计成接纳所述电接触，同时允许所述电气接触（探针元件）相对于所述引导板中的所述孔移动。该材料可以是硅，硼硅酸盐玻璃和堇青石中的一种。

2. 发明申请

US20070257689A1 High density thermally matched contacting probe assembly and method for producing same 失效
标题翻译：高密度热匹配接触探针组件及其制造方法
公开(公告)号：US20070257689A1
公开(公告)日：2007-11-08
申请号：US11429419
申请日：2006-05-05
申请人： Timothy Dalton , Simon Karecki , Anna Karecki , Samuel Mcknight , George Walker
发明人： Timothy Dalton , Simon Karecki , Anna Karecki , Samuel Mcknight , George Walker
IPC分类号： G01R31/02
CPC分类号： G01R1/07371 , G01R3/00 , Y10T29/49117 , Y10T29/49204 , Y10T29/49208 , Y10T29/49217 , Y10T29/49995
摘要： A method to fabricate a high density, minimal pitch, thermally matched contactor assembly to maintain electrical contact with contact regions on fully processed semiconductors, preferably while still in wafer form, and throughout a range of temperatures. A guide plate and a contactor assembly for such use, comprising a substrate formed of a material having a coefficient of thermal expansion approximately equal to that of the device; and at least one hole in the guide plate for receiving an electrical contact (probe element) for contacting at least one respective region on said surface, said at least one hole being sized and shaped so as to accept said electrical contact, while allowing said electrical contact (probe element) to move with respect to said hole in said guide plate. The material can be one of silicon, borosilicate glass and cordierite.
摘要翻译：制造高密度，最小间距，热匹配的接触器组件的方法，以保持与完全处理的半导体上的接触区域的电接触，优选同时处于晶片形式，并且在整个温度范围内。一种用于这种用途的引导板和接触器组件，包括由具有大约等于该装置的热膨胀系数的材料形成的基底; 和引导板中的至少一个孔，用于接收用于接触所述表面上的至少一个相应区域的电接触（探针元件），所述至少一个孔的尺寸和形状被设计成接纳所述电接触，同时允许所述电气接触（探针元件）相对于所述引导板中的所述孔移动。该材料可以是硅，硼硅酸盐玻璃和堇青石中的一种。

3. 发明授权

US07393776B2 Method of forming closed air gap interconnects and structures formed thereby 有权
标题翻译：形成闭合气隙互连件和由此形成的结构的方法
公开(公告)号：US07393776B2
公开(公告)日：2008-07-01
申请号：US11405287
申请日：2006-04-17
申请人： Matthew E Colburn , Timothy J Dalton , Elbert Huang , Anna Karecki, legal representative , Satya V Nitta , Sampath Purushothaman , Katherine L Saenger , Maheswaran Surendra
发明人： Simon M Karecki
IPC分类号： H01L21/4763
CPC分类号： H01L21/76807 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.
摘要翻译：描述了形成闭合气隙互连结构的方法。在互连线下方由永久支撑电介质的区域构成的起始结构和在互连结构的其余部分中存在的具有一个或多个牺牲电介质的周围的互连通孔被封装有电介质阻挡层，其使用具有规则的模板孔阵列然后通过电介质阻挡层中的孔提取牺牲电介质，使得互连线基本上被除了线下方的支撑电介质的区域之外的空气包围。通过沉积第二阻挡电介质来封闭盖层中的孔，从而形成封闭的气隙。描述该方法的几个实施例和所得到的结构。

4. 发明授权

US07309649B2 Method of forming closed air gap interconnects and structures formed thereby 失效
标题翻译：形成闭合气隙互连件和由此形成的结构的方法
公开(公告)号：US07309649B2
公开(公告)日：2007-12-18
申请号：US11405283
申请日：2006-04-17
申请人： Matthew E Colburn , Timothy J Dalton , Elbert Huang , Anna Karecki, legal representative , Satya V Nitta , Sampath Purushothaman , Katherine L Saenger , Maheswaran Surendra
发明人： Simon M Karecki, deceased
IPC分类号： H01L21/4763
CPC分类号： H01L21/76807 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.
摘要翻译：描述了形成闭合气隙互连结构的方法。在互连线下方由永久支撑电介质的区域构成的起始结构和在互连结构的其余部分中存在的具有一个或多个牺牲电介质的周围的互连通孔被封装有电介质阻挡层，其使用具有规则的模板孔阵列然后通过电介质阻挡层中的孔提取牺牲电介质，使得互连线基本上被除了线下方的支撑电介质的区域之外的空气包围。通过沉积第二阻挡电介质来封闭盖层中的孔，从而形成封闭的气隙。描述该方法的几个实施例和所得到的结构。

5. 发明申请

US20060258147A1 Method of forming closed air gap interconnects and structures formed thereby 有权
公开(公告)号：US20060258147A1
公开(公告)日：2006-11-16
申请号：US11405287
申请日：2006-04-17
申请人： Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
发明人： Matthew Colburn , Timothy Dalton , Elbert Huang , Simon Karecki , Anna Karecki , Satya Nitta , Sampath Purushothaman , Katherine Saenger , Maheswaran Surendra
IPC分类号： H01L21/4763 , H01L23/48
CPC分类号： H01L21/76807 , H01L21/7682 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect structure, is capped with a dielectric barrier which is perforated using a stencil with a regular array of holes. The sacrificial dielectrics are then extracted through the holes in the dielectric barrier layer such that the interconnect lines are substantially surrounded by air except for the regions of the support dielectric under the lines. The holes in the cap layer are closed off by depositing a second barrier dielectric so that a closed air gap is formed. Several embodiments of this method and the resulting structures are described.

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