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1. 发明申请

US20090026134A1 IN-SITU GROUNDWATER NITRIFICATION AND DE-NITRIFICATION REMEDIATION SYSTEM 审中-公开
标题翻译：现场地下水硝化和净化补救系统
公开(公告)号：US20090026134A1
公开(公告)日：2009-01-29
申请号：US12174078
申请日：2008-07-16
申请人： Stephen B. Mailath , Ann Chien Chu
发明人： Stephen B. Mailath , Ann Chien Chu
IPC分类号： C02F3/34 , C02F101/16 , C02F103/06
CPC分类号： C02F3/302 , B09C1/002 , C02F1/001 , C02F2103/06 , C02F2305/06
摘要： A method of in-situ groundwater nitrification, by: extracting groundwater from the ground; adding oxygen to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the oxygen reacts with in-situ nitrifying bacteria to oxidize ammonia to nitrate, and wherein the nutrients encourage the nitrifying bacteria to grow and reproduce. A method of in-situ groundwater de-nitrification, by: extracting the groundwater from the ground; adding carbon to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the carbon reacts with in-situ de-nitrifying bacteria to reduce nitrate to nitrogen gas, and wherein the nutrients encourage the de-nitrifying bacteria to grow and reproduce.
摘要翻译：一种原位地下水硝化方法，通过：从地下提取地下水; 向提取的地下水中加入氧气; 向提取的地下水中添加营养; 并将地下水注入地下，其中氧与原位硝化细菌反应以将氨氧化成硝酸盐，并且其中营养物质促使硝化细菌生长和繁殖。一种原位地下水脱硝方法，通过：从地下提取地下水; 向提取的地下水中加入碳; 向提取的地下水中添加营养; 并将地下水注入地下，其中碳与原位脱氮细菌反应以将硝酸盐还原成氮气，并且其中营养物质促使脱氮细菌生长和繁殖。

2. 发明授权

US07407583B2 In-situ groundwater nitrification and de-nitrification remediation system 有权
标题翻译：原位地下水硝化和脱氮补救系统
公开(公告)号：US07407583B2
公开(公告)日：2008-08-05
申请号：US11090380
申请日：2005-03-25
申请人： Stephen B. Mailath , Ann Chien Chu
发明人： Stephen B. Mailath , Ann Chien Chu
IPC分类号： C02F3/02
CPC分类号： C02F3/302 , B09C1/002 , C02F1/001 , C02F2103/06 , C02F2305/06
摘要： A method of in-situ groundwater nitrification, by: extracting groundwater from the ground; adding oxygen to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the oxygen reacts with in-situ nitrifying bacteria to oxidize ammonia to nitrate, and wherein the nutrients encourage the nitrifying bacteria to grow and reproduce. A method of in-situ groundwater de-nitrification, by: extracting the groundwater from the ground; adding carbon to the extracted groundwater; adding nutrients to the extracted groundwater; and injecting the groundwater back into the ground, wherein the carbon reacts with in-situ de-nitrifying bacteria to reduce nitrate to nitrogen gas, and wherein the nutrients encourage the de-nitrifying bacteria to grow and reproduce.
摘要翻译：一种原位地下水硝化方法，通过：从地下提取地下水; 向提取的地下水中加入氧气; 向提取的地下水中添加营养; 并将地下水注入地下，其中氧与原位硝化细菌反应以将氨氧化成硝酸盐，并且其中营养物质促使硝化细菌生长和繁殖。一种原位地下水脱硝方法，通过：从地下提取地下水; 向提取的地下水中加入碳; 向提取的地下水中添加营养; 并将地下水注入地下，其中碳与原位脱氮细菌反应以将硝酸盐还原成氮气，并且其中营养物质促使脱氮细菌生长和繁殖。

3. 发明授权

US06921493B2 Method of processing substrates 失效
标题翻译：处理基板的方法
公开(公告)号：US06921493B2
公开(公告)日：2005-07-26
申请号：US10141638
申请日：2002-05-06
申请人： Ann Chien , Brett C. Richardson , Sterling M. Goyer
发明人： Ann Chien , Brett C. Richardson , Sterling M. Goyer
IPC分类号： C23F1/00 , H01B13/00 , H01L21/00 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/3213 , H01L21/461
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/32136 , H01L21/32139
摘要： This invention relates to a method of oxide hardmask aluminum etching in metal dry etch processors. It consists of two steps: the step of dry etching an aluminum interconnect stack by using an etch gas composed mainly of boron trichloride/chlorine/fluoroform/nitrogen, and the step of removing etch remnants by using a vapor plasma. The function of the etch gas is to etch the aluminum interconnection pattern in the semi-conductor, and the function of the water vapor plasma is to prevent the corrosion of a chip during the process of removing etch remnants, which will further reduce water rinsing and solution cleaning as in conventional practice, of water rinsing and solution cleaning after removal of photoresist.
摘要翻译：本发明涉及金属干法蚀刻处理器中的氧化物硬掩模铝蚀刻方法。它包括两个步骤：通过使用主要由三氯化硼/氯/氟/氮/氮组成的蚀刻气体干蚀刻铝互连叠层的步骤，以及通过使用蒸汽等离子体去除蚀刻残留物的步骤。蚀刻气体的功能是蚀刻半导体中的铝互连图案，并且水蒸汽等离子体的功能是在去除蚀刻残留物的过程中防止芯片的腐蚀，这将进一步减少水冲洗和解决方案清洗，如在常规实践中，去除光致抗蚀剂后进行水洗和溶液清洗。

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