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1. 发明申请

US20140216524A1 ARRAYS OF ULTRATHIN SILICON SOLAR MICROCELLS 有权
标题翻译：超声波太阳能微波炉阵列
公开(公告)号：US20140216524A1
公开(公告)日：2014-08-07
申请号：US14173525
申请日：2014-02-05
申请人： John A. ROGERS , Angus A. ROCKETT , Ralph NUZZO , Jongseung YOON , Alfred BACA
发明人： John A. ROGERS , Angus A. ROCKETT , Ralph NUZZO , Jongseung YOON , Alfred BACA
IPC分类号： H01L31/05 , H01L31/048 , H01L31/028
CPC分类号： H01L31/18 , H01L31/035281 , H01L31/048 , H01L31/0508 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.
摘要翻译：提供太阳能电池，光伏和制造太阳能电池的相关方法，其中太阳能电池由超薄太阳能级或低质量硅制成。一方面，本发明是通过提供具有接收面的太阳能电池基板和通过接触印刷在基板的接收面上组装可印刷的半导体元件来制造太阳能电池的方法。半导体元件的厚度小于或等于100μm，例如由低等级的Si制成。

2. 发明授权

US5477088A Multi-phase back contacts for CIS solar cells 失效
标题翻译： CIS太阳能电池的多相背触点
公开(公告)号：US5477088A
公开(公告)日：1995-12-19
申请号：US60284
申请日：1993-05-12
申请人： Angus A. Rockett , Li-Chung Yang
发明人： Angus A. Rockett , Li-Chung Yang
IPC分类号： H01L31/0224 , H01L31/032 , H01L31/0336 , H01L23/48 , H01L29/46 , H01L29/62 , H01L29/64
CPC分类号： H01L31/0749 , H01L31/022425 , H01L31/0322 , Y02E10/541
摘要： Multi-phase, single layer, non-interdiffusing M-Mo back contact metallized films, where M is selected from Cu, Ga, or mixtures thereof, for CIS cells are deposited by a sputtering process on suitable substrates, preferably glass or alumina, to prevent delamination of the CIS from the back contact layer. Typical CIS compositions include CuXSe.sub.2 where X is In or/and Ga. The multi-phase mixture is deposited on the substrate in a manner to provide a columnar microstructure, with micro-vein Cu or/and Ga regions which partially or fully vertically penetrate the entire back contact layer. The CIS semiconductor layer is then deposited by hybrid sputtering and evaporation process. The Cu/Ga-Mo deposition is controlled to produce the single layer two-phase columnar morphology with controllable Cu or Ga vein size less than about 0.01 microns in width. During the subsequent deposition of the CIS layer, the columnar Cu/Ga regions within the molybdenum of the Cu/Ga-Mo back layer tend to partially leach out, and are replaced by columns of CIS. Narrower Cu and/or Ga regions, and those with fewer inner connections between regions, leach out more slowly during the subsequent CIS deposition. This gives a good mechanical and electrical interlock of the CIS layer into the Cu/Ga-Mo back layer. Solar cells employing In-rich CIS semiconductors bonded to the multi-phase columnar microstructure back layer of this invention exhibit vastly improved photo-electrical conversion on the order of 17% greater than Mo alone, improved uniformity of output across the face of the cell, and greater Fill Factor.
摘要翻译：对于CIS电池，其中M选自Cu，Ga或其混合物的多相单层，非相互扩散的M-Mo背接触金属化膜通过溅射工艺沉积在合适的衬底上，优选玻璃或氧化铝上，至防止CIS从背面接触层分层。典型的CIS组合物包括CuXSe2，其中X是In或/和Ga。多相混合物以提供柱状微结构的方式沉积在基底上，其中微静脉Cu或/和Ga区域部分地或完全垂直地穿透整个背面接触层。然后通过混合溅射和蒸发过程沉积CIS半导体层。控制Cu / Ga-Mo沉积以产生单层两相柱状形态，其可控的Cu或Ga静电尺寸的宽度小于约0.01微米。在CIS层的随后沉积过程中，Cu / Ga-Mo背层的钼内的柱状Cu / Ga区倾向于部分浸出，并被CIS列所取代。较窄的Cu和/或Ga区域，以及区域之间的内部连接较少的区域，在随后的CIS沉积期间较慢地浸出。这使得CIS层进入Cu / Ga-Mo背层的良好机械和电气互锁。使用与本发明的多相柱状微结构背层结合的富In CIS半导体的太阳能电池显示出大大提高了大约比单独Mo高17％的光电转换，提高了电池表面的输出均匀性，和更大的填充因子。

3. 发明授权

US08679888B2 Arrays of ultrathin silicon solar microcells 有权
标题翻译：超薄硅太阳能电池阵列
公开(公告)号：US08679888B2
公开(公告)日：2014-03-25
申请号：US13120486
申请日：2009-09-24
申请人： John A. Rogers , Angus A. Rockett , Ralph Nuzzo , Jongseung Yoon , Alfred Baca
发明人： John A. Rogers , Angus A. Rockett , Ralph Nuzzo , Jongseung Yoon , Alfred Baca
IPC分类号： H01L31/18
CPC分类号： H01L31/18 , H01L31/035281 , H01L31/048 , H01L31/0508 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.
摘要翻译：提供太阳能电池，光伏和制造太阳能电池的相关方法，其中太阳能电池由超薄太阳能级或低质量硅制成。一方面，本发明是通过提供具有接收面的太阳能电池基板和通过接触印刷在基板的接收面上组装可印刷的半导体元件来制造太阳能电池的方法。半导体元件的厚度小于或等于100μm，例如由低等级的Si制成。

4. 发明申请

US20110277813A1 Arrays of Ultrathin Silicon Solar Microcells 有权
标题翻译：超薄硅太阳能微电池阵列
公开(公告)号：US20110277813A1
公开(公告)日：2011-11-17
申请号：US13120486
申请日：2009-09-24
申请人： John A. Rogers , Angus A. Rockett , Ralph Nuzzo , Jongseung Yoon , Alfred Baca
发明人： John A. Rogers , Angus A. Rockett , Ralph Nuzzo , Jongseung Yoon , Alfred Baca
IPC分类号： H01L31/042 , H01L31/02 , H01L31/0264
CPC分类号： H01L31/18 , H01L31/035281 , H01L31/048 , H01L31/0508 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Provided are solar cells, photovoltaics and related methods for making solar cells, wherein the solar cell is made of ultrathin solar grade or low quality silicon. In an aspect, the invention is a method of making a solar cell by providing a solar cell substrate having a receiving surface and assembling a printable semiconductor element on the receiving surface of the substrate via contact printing. The semiconductor element has a thickness that is less than or equal to 100 μm and, for example, is made from low grade Si.
摘要翻译：提供太阳能电池，光伏和制造太阳能电池的相关方法，其中太阳能电池由超薄太阳能级或低质量硅制成。一方面，本发明是通过提供具有接收面的太阳能电池基板和通过接触印刷在基板的接收面上组装可印刷的半导体元件来制造太阳能电池的方法。半导体元件的厚度小于或等于100μm，例如由低等级的Si制成。

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