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    • 1. 发明申请
    • CIRCUIT ARCHITECTURE ON AN ORGANIC BASE AND RELATED MANUFACTURING METHOD
    • 有机基础电路架构及相关制造方法
    • US20110275018A1
    • 2011-11-10
    • US13101903
    • 2011-05-05
    • Andrea di MatteoAngela Cimmino
    • Andrea di MatteoAngela Cimmino
    • G03F7/36B05D5/12H01L21/70
    • G03F7/11H01L51/0011Y10T428/31786
    • A method comprises providing a bottom electrode, depositing, on the bottom electrode, an active material comprising a first structural portion having an absorption peak at a UV wavelength, wherein such first structural portion is photo-activatable at such wavelength and which is constituted by monomers or oligomers that, when irradiated at said wavelength, undergo a photo-polymerization and/or photo-cross-linking reaction, or constituted by a polymer that at a UV wavelength undergoes a photo-degradation reaction, and a second electrically active or activatable structural portion which is substantially transparent to such predetermined UV wavelength; exposing a portion of the active material, through a photomask, to UV radiation having such UV wavelength, with photo-activation of the exposed portion of such film; selectively removing either the exposed photo-activated portion or the non-exposed portion, with exposure of a respective portion of the bottom electrode; depositing a head electrode.
    • 一种方法包括提供底部电极,在底部电极上沉​​积包括在UV波长处具有吸收峰的第一结构部分的活性材料,其中这种第一结构部分在这样的波长下是可光激活的并且由单体 或低聚物,当在所述波长下照射时,进行光聚合和/或光交联反应,或由在紫外线波长处经历光降解反应的聚合物构成,以及第二电活性或可活化的结构 对于这种预定的UV波长基本上是透明的部分; 通过光掩模将一部分活性材料暴露于具有这种UV波长的紫外线辐射下,使这种膜的暴露部分光致活化; 通过曝光底部电极的相应部分来选择性地去除曝光的光致活化部分或非曝光部分; 沉积头电极。
    • 4. 发明授权
    • Circuit architecture on an organic base and related manufacturing method
    • 有机基础电路架构及相关制造方法
    • US08470633B2
    • 2013-06-25
    • US13101903
    • 2011-05-05
    • Andrea di MatteoAngela Cimmino
    • Andrea di MatteoAngela Cimmino
    • H01L51/05
    • G03F7/11H01L51/0011Y10T428/31786
    • A method comprises providing a bottom electrode, depositing, on the bottom electrode, an active material comprising a first structural portion having an absorption peak at a UV wavelength, wherein such first structural portion is photo-activatable at such wavelength and which is constituted by monomers or oligomers that, when irradiated at said wavelength, undergo a photo-polymerization and/or photo-cross-linking reaction, or constituted by a polymer that at a UV wavelength undergoes a photo-degradation reaction, and a second electrically active or activatable structural portion which is substantially transparent to such predetermined UV wavelength; exposing a portion of the active material, through a photomask, to UV radiation having such UV wavelength, with photo-activation of the exposed portion of such film; selectively removing either the exposed photo-activated portion or the non-exposed portion, with exposure of a respective portion of the bottom electrode; depositing a head electrode.
    • 一种方法包括提供底部电极,在底部电极上沉​​积包括在UV波长处具有吸收峰的第一结构部分的活性材料,其中这种第一结构部分在这样的波长下是可光激活的并且由单体 或低聚物,当在所述波长下照射时,进行光聚合和/或光交联反应,或由在UV波长处经历光降解反应的聚合物构成,以及第二电活性或可活化的结构 对于这种预定的UV波长基本上是透明的部分; 通过光掩模将一部分活性材料暴露于具有这种UV波长的紫外线辐射下,使这种膜的暴露部分光致活化; 通过曝光底部电极的相应部分来选择性地去除曝光的光致活化部分或非曝光部分; 沉积头电极。
    • 5. 发明授权
    • Circuit architecture on an organic base and related manufacturing method
    • 有机基础电路架构及相关制造方法
    • US07960722B2
    • 2011-06-14
    • US12060651
    • 2008-04-01
    • Andrea di MatteoAngela Cimmino
    • Andrea di MatteoAngela Cimmino
    • H01L51/05
    • G03F7/11H01L51/0011Y10T428/31786
    • A method comprises providing a bottom electrode, depositing, on the bottom electrode, an active material comprising a first structural portion having an absorption peak at a UV wavelength, wherein such first structural portion is photo-activatable at such wavelength and which is constituted by monomers or oligomers that, when irradiated at said wavelength, undergo a photo-polymerization and/or photo-cross-linking reaction, or constituted by a polymer that at a UV wavelength undergoes a photo-degradation reaction, and a second electrically active or activatable structural portion which is substantially transparent to such predetermined UV wavelength; exposing a portion of the active material, through a photomask, to UV radiation having such UV wavelength, with photo-activation of the exposed portion of such film; selectively removing either the exposed photo-activated portion or the non-exposed portion, with exposure of a respective portion of the bottom electrode; depositing a head electrode.
    • 一种方法包括提供底部电极,在底部电极上沉​​积包括在UV波长处具有吸收峰的第一结构部分的活性材料,其中这种第一结构部分在这样的波长下是可光激活的并且由单体 或低聚物,当在所述波长下照射时,进行光聚合和/或光交联反应,或由在UV波长处经历光降解反应的聚合物构成,以及第二电活性或可活化的结构 对于这种预定的UV波长基本上是透明的部分; 通过光掩模将一部分活性材料暴露于具有这种UV波长的紫外线辐射下,使这种膜的暴露部分光致活化; 通过曝光底部电极的相应部分来选择性地去除曝光的光致活化部分或非曝光部分; 沉积头电极。
    • 8. 发明申请
    • CIRCUIT ARCHITECTURE ON AN ORGANIC BASE AND RELATED MANUFACTURING METHOD
    • 有机基础电路架构及相关制造方法
    • US20080241564A1
    • 2008-10-02
    • US12060651
    • 2008-04-01
    • Andrea di MatteoAngela Cimmino
    • Andrea di MatteoAngela Cimmino
    • G03F7/20B32B27/36
    • G03F7/11H01L51/0011Y10T428/31786
    • A method comprises providing a bottom electrode, depositing, on the bottom electrode, an active material comprising a first structural portion having an absorption peak at a UV wavelength, wherein such first structural portion is photo-activatable at such wavelength and which is constituted by monomers or oligomers that, when irradiated at said wavelength, undergo a photo-polymerization and/or photo-cross-linking reaction, or constituted by a polymer that at a UV wavelength undergoes a photo-degradation reaction, and a second electrically active or activatable structural portion which is substantially transparent to such predetermined UV wavelength; exposing a portion of the active material, through a photomask, to UV radiation having such UV wavelength, with photo-activation of the exposed portion of such film; selectively removing either the exposed photo-activated portion or the non-exposed portion, with exposure of a respective portion of the bottom electrode; depositing a head electrode.
    • 一种方法包括提供底部电极,在底部电极上沉​​积包括在UV波长处具有吸收峰的第一结构部分的活性材料,其中这种第一结构部分在这样的波长下是可光激活的并且由单体 或低聚物,当在所述波长下照射时,进行光聚合和/或光交联反应,或由在UV波长处经历光降解反应的聚合物构成,以及第二电活性或可活化的结构 对于这种预定的UV波长基本上是透明的部分; 通过光掩模将一部分活性材料暴露于具有这种UV波长的紫外线辐射下,使这种膜的暴露部分光致活化; 通过曝光底部电极的相应部分来选择性地去除曝光的光致活化部分或非曝光部分; 沉积头电极。