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1. 发明授权

US06962879B2 Method of plasma etching silicon nitride 有权
标题翻译：等离子体蚀刻氮化硅的方法
公开(公告)号：US06962879B2
公开(公告)日：2005-11-08
申请号：US09820694
申请日：2001-03-30
申请人： Helen H. Zhu , David R. Pirkle , S. M. Reza Sadjadi , Andrew S. Li
发明人： Helen H. Zhu , David R. Pirkle , S. M. Reza Sadjadi , Andrew S. Li
IPC分类号： H01L21/311 , H01L21/768 , H01L21/302
CPC分类号： H01L21/76811 , H01L21/31116 , H01L21/76807 , H01L21/7681 , H01L21/76813
摘要： A semiconductor manufacturing process wherein silicon nitride is plasma etched with selectivity to an overlying and/or underlying dielectric layer such as a silicon oxide or low-k material. The etchant gas includes a fluorocarbon reactant and an oxygen reactant, the ratio of the flow rate of the oxygen reactant to that of the fluorocarbon reactant being no greater than 1.5. The etch rate of the silicon nitride can be at least 5 times higher than that of the oxide. Using a combination of CH3F and O2 with optional carrier gasses such as Ar and/or N2, it is possible to obtain nitride:oxide etch rate selectivities of over 40:1. The process is useful for simultaneously removing silicon nitride in 0.25 micron and smaller contact or via openings and wide trenches in forming structures such as damascene and self-aligned structures.
摘要翻译：半导体制造工艺，其中氮化硅被等离子体蚀刻，对上覆和/或下层介电层（例如氧化硅或低k材料）具有选择性。蚀刻剂气体包括氟碳反应物和氧反应物，氧反应物的流速与氟碳反应物的流速之比不大于1.5。氮化硅的蚀刻速率可以比氧化物的蚀刻速度高5倍以上。使用CH 3 3 F和O 2 2的组合与可选的载气如Ar和/或N 2 N组合，可以获得氮化物：氧化物蚀刻速率选择性超过40：1。该方法对于同时去除0.25微米和更小的接触或通孔开口和宽沟槽中的氮化硅在形成结构如镶嵌和自对准结构中是有用的。

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