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    • 4. 发明授权
    • Chemical vapor deposition from single organometallic precursors
    • 来自单一有机金属前体的化学气相沉积
    • US5300320A
    • 1994-04-05
    • US903256
    • 1992-06-23
    • Andrew R. BarronMichael B. PowerAndrew N. MacInnesAloysius F. HeppPhillip P. Jenkins
    • Andrew R. BarronMichael B. PowerAndrew N. MacInnesAloysius F. HeppPhillip P. Jenkins
    • C23C16/30H01L21/20H01L21/285H01L21/314C23C16/00
    • H01L21/02568C23C16/30C23C16/305H01L21/02392H01L21/02395H01L21/0262
    • A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.
    • 公开了在基板上形成钝化/缓冲膜的方法。 该方法包括将基底加热到足以引起挥发的有机金属前体热解的温度,从而在基底上形成钝化/缓冲膜。 有机金属前驱体在前体源处挥发。 载气从载体气体源引导穿过前体源,以将挥发的前体从前体源引导到基底。 挥发的前体热解并沉积在基材上,从而在基材上形成钝化/缓冲膜。 钝化/缓冲膜可以是立方相钝化/缓冲膜。 也可以在钝化/缓冲膜上形成氧化物层,从而形成基板,钝化/缓冲膜和氧化物层的复合物。 通过本发明的方法形成的立方相钝化/缓冲膜可以与衬底晶格匹配。 可以形成包括通过本发明的方法形成的钝化/缓冲膜的电子或电光电路或电路元件。