专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5738721A Liquid precursor and method for forming a cubic-phase passivating/buffer film 失效
标题翻译：液体前体和形成立方相钝化/缓冲膜的方法
公开(公告)号：US5738721A
公开(公告)日：1998-04-14
申请号：US418005
申请日：1995-04-06
申请人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes
发明人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes
IPC分类号： C07F5/00 , C07F5/06 , C23C16/30 , H01L21/314 , C30B25/02
CPC分类号： C23C16/305 , C07F5/00 , C07F5/066 , H01L21/314
摘要： A chemical composition consists essentially ((t-amyl)GaS).sub.4. The chemical composition can be employed as a liquid precursor for metal organic chemical vapor deposition to thereby form a cubic-phase passivating/buffer film, such as gallium sulphide.
摘要翻译：化学组成基本上由（（叔戊基）GaS）4组成。化学组成可用作金属有机化学气相沉积的液体前体，从而形成立方相钝化/缓冲膜，例如硫化镓。

2. 发明授权

US5760462A Metal, passivating layer, semiconductor, field-effect transistor 失效
标题翻译：金属，钝化层，半导体场效应晶体管
公开(公告)号：US5760462A
公开(公告)日：1998-06-02
申请号：US820183
申请日：1997-03-19
申请人： Andrew R. Barron , Phillip P. Jenkins , Andrew N. MacInnes , Aloysius F. Hepp
发明人： Andrew R. Barron , Phillip P. Jenkins , Andrew N. MacInnes , Aloysius F. Hepp
IPC分类号： H01L23/29 , H01L23/31 , H01L23/58 , H01L29/24 , H01L29/47 , H01L29/51 , H01L29/80 , H01L29/78
CPC分类号： H01L29/517 , H01L23/29 , H01L23/3171 , H01L23/585 , H01L29/24 , H01L29/47 , H01L29/802 , H01L2924/0002 , H01L2924/13063 , H01L2924/13091 , Y10S438/958
摘要： A majority carrier device includes a bulk active region and a thin-film passivating layer on the bulk active region. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. In one embodiment, the majority carrier device is a metal, passivating layer, semiconductor, field-effect transistor. The transistor includes an active layer and thin-film passivating layer on the active layer. The thin-film passivating layer includes a Group 13 element and a chalcogenide component. Source and drain contacts are disposed on the active layer or the passivating layer. A gate contact is disposed on the passivating layer between the source contact and the drain contact.
摘要翻译：多数载流子器件包括本体有源区和大块活性区上的薄膜钝化层。薄膜钝化层包括第13族元素和硫族化物成分。在一个实施例中，多数载流子器件是金属，钝化层，半导体场效应晶体管。晶体管包括有源层和有源层上的薄膜钝化层。薄膜钝化层包括第13族元素和硫族化物成分。源极和漏极触点设置在有源层或钝化层上。栅极触点设置在源极触点和漏极触点之间的钝化层上。

3. 发明授权

US06998320B2 Passivation layer for group III-V semiconductor devices 有权
标题翻译： III-V族半导体器件的钝化层
公开(公告)号：US06998320B2
公开(公告)日：2006-02-14
申请号：US10422201
申请日：2003-04-23
申请人： Martha R. Krueger , Andrew N. MacInnes
发明人： Martha R. Krueger , Andrew N. MacInnes
IPC分类号： H01L21/00
CPC分类号： H01L29/66318 , H01L23/3171 , H01L29/7371 , H01L2924/0002 , H01L2924/00
摘要： A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents.
摘要翻译：用于异质结双极晶体管（HBT）的钝化层由与其钝化的HBT组分晶格匹配的相对较高的带隙材料形成。通过选择钝化层具有比HBT成分更高的带隙，少数载流子被钝化层包含在HBT内。同时，钝化层的晶格匹配确保了牢固的结合，防止随后在基底和集电体（和/或其他钝化表面）的外表面形成悬挂键，从而最小化表面泄漏电流。

4. 发明授权

US5300320A Chemical vapor deposition from single organometallic precursors 失效
标题翻译：来自单一有机金属前体的化学气相沉积
公开(公告)号：US5300320A
公开(公告)日：1994-04-05
申请号：US903256
申请日：1992-06-23
申请人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
发明人： Andrew R. Barron , Michael B. Power , Andrew N. MacInnes , Aloysius F. Hepp , Phillip P. Jenkins
IPC分类号： C23C16/30 , H01L21/20 , H01L21/285 , H01L21/314 , C23C16/00
CPC分类号： H01L21/02568 , C23C16/30 , C23C16/305 , H01L21/02392 , H01L21/02395 , H01L21/0262
摘要： A method is disclosed for forming a passivating/buffer film on a substrate. The method includes heating the substrate to a temperature which is sufficient to cause a volatilized organometallic precursor to pyrolyze and thereby form a passivating/buffer film on a substrate. The organometallic precursor is volatilized at a precursor source. A carrier gas is directed from a carrier gas source across the precursor source to conduct the volatilized precursor from the precursor source to the substrate. The volatilized precursor pyrolyzes and is deposited onto the substrate, thereby forming the passivating/buffer film on the substrate. The passivating/buffer film can be a cubic-phase passivating/buffer film. An oxide layer can also be formed on the passivating/buffer film to thereby form a composite of the substrate, the passivating/buffer film and the oxide layer. Cubic-phase passivating/buffer films formed by the method of the invention can be lattice-matched with the substrate. Electronic or electro-optical circuits or circuit elements can be formed which include passivating/buffer films formed by the method of the invention.
摘要翻译：公开了在基板上形成钝化/缓冲膜的方法。该方法包括将基底加热到足以引起挥发的有机金属前体热解的温度，从而在基底上形成钝化/缓冲膜。有机金属前驱体在前体源处挥发。载气从载体气体源引导穿过前体源，以将挥发的前体从前体源引导到基底。挥发的前体热解并沉积在基材上，从而在基材上形成钝化/缓冲膜。钝化/缓冲膜可以是立方相钝化/缓冲膜。也可以在钝化/缓冲膜上形成氧化物层，从而形成基板，钝化/缓冲膜和氧化物层的复合物。通过本发明的方法形成的立方相钝化/缓冲膜可以与衬底晶格匹配。可以形成包括通过本发明的方法形成的钝化/缓冲膜的电子或电光电路或电路元件。

5. 发明授权

US5238711A Method of coating carbon fibers with a carbide 失效
标题翻译：用碳化物涂覆碳纤维的方法
公开(公告)号：US5238711A
公开(公告)日：1993-08-24
申请号：US672378
申请日：1991-03-20
申请人： Andrew R. Barron , Andrew N. MacInnes , Thomas R. Gilbert
发明人： Andrew R. Barron , Andrew N. MacInnes , Thomas R. Gilbert
IPC分类号： C04B41/50 , C04B41/87
CPC分类号： C04B41/87 , C04B41/5057
摘要： A method for rapidly providing an impervious carbon substrate such as carbon fibers with a carbide coating, in atmospheric pressure, so as to provide a carbide layer bound to the carbon substrate. A carbide layer on the impervious carbon substrate is provided by coating the substrate with a concentrated solution of a carbide forming element in compound dissolved in a suitable solvent. The carbon substrate is heated to a temperature at which the carbide forming element in compound decomposes and chemically reacts with the carbon substrate to form the desired carbide layer.
摘要翻译：一种用于在大气压下快速提供具有碳化物涂层的碳纤维等不透水性碳基板的方法，以提供与碳基板结合的碳化物层。通过用溶解在合适溶剂中的化合物形成元素的浓缩溶液涂覆基底来提供不渗透碳基底上的碳化物层。将碳基板加热到化合物中的碳化物形成元素分解并与碳基板发生化学反应以形成所需的碳化物层的温度。

6. 发明申请

US20120236891A1 LASERS WITH QUANTUM WELLS HAVING HIGH INDIUM AND LOW ALUMINUM WITH BARRIER LAYERS HAVING HIGH ALUMINUM AND LOW INDIUM WITH REDUCED TRAPS 审中-公开
标题翻译：具有高铝和低铝的量子柱的激光器具有具有高铝和低含量的阻挡层的具有减少的行进
公开(公告)号：US20120236891A1
公开(公告)日：2012-09-20
申请号：US13423550
申请日：2012-03-19
申请人： Ralph H. Johnson , Jimmy Alan Tatum , Andrew N. MacInnes , Jerome K. Wade , Luke A. Graham
发明人： Ralph H. Johnson , Jimmy Alan Tatum , Andrew N. MacInnes , Jerome K. Wade , Luke A. Graham
IPC分类号： H01S5/183 , H01L33/04
CPC分类号： H01S5/3407 , B82Y20/00 , H01S5/0021 , H01S5/18311 , H01S5/34313 , H01S5/3436 , H01S5/34366 , H01S5/34373
摘要： A VCSEL can include: one or more quantum wells having (Al)InGaAs; two or more quantum well barriers having Al(In)GaAs bounding the one or more quantum well layers; and one or more transitional monolayers deposited between each quantum well layer and quantum well barrier, wherein the quantum wells, barriers and transitional monolayers are substantially devoid of traps. The one or more transitional monolayers include GaP, GaAs, and/or GaAsP. Alternatively, the VCSEL can include two or more transitional monolayers of AlInGaAs with a barrier-side monolayer having lower In and higher Al compared to a quantum well side monolayer that has higher In and lower Al.
摘要翻译： VCSEL可以包括：具有（Al）InGaAs的一个或多个量子阱; 具有限定一个或多个量子阱层的Al（In）GaAs的两个或更多个量子阱屏障; 并且沉积在每个量子阱层和量子阱屏障之间的一个或多个过渡单层，其中量子阱，势垒和过渡单层基本上没有陷阱。一个或多个过渡单层包括GaP，GaAs和/或GaAsP。或者，与具有较高In和更低Al的量子阱侧单层相比，VCSEL可以包括两个或更多个AlInGaAs的过渡单层和具有较低In和更高Al的势垒侧单层。

7. 发明授权

US6008525A Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component 失效
标题翻译：少数载体装置包括包含第13族元素和硫族化物成分的钝化层
公开(公告)号：US6008525A
公开(公告)日：1999-12-28
申请号：US993613
申请日：1997-12-18
申请人： Andrew R. Barron , Aloysius F. Hepp , Phillip P. Jenkins , Andrew N. MacInnes
发明人： Andrew R. Barron , Aloysius F. Hepp , Phillip P. Jenkins , Andrew N. MacInnes
IPC分类号： H01L29/737 , H01L31/0216 , H01L33/44 , H01L23/58 , H01L29/78
CPC分类号： H01L33/44 , H01L29/7371 , H01L31/02161 , H01L31/02167 , Y02E10/50
摘要： A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a chalcogenide component. Embodiments of the minority carrier device include, for example, laser diodes, light emitting diodes, heterojunction bipolar transistors, and solar cells.
摘要翻译：少数载流子器件包括至少两个不同材料的至少一个结，其中至少一个是半导体，以及在器件的至少一个表面上的钝化层。钝化层包括第13族元素和硫族化物成分。少数载流子器件的实施例包括例如激光二极管，发光二极管，异质结双极晶体管和太阳能电池。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式