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    • 8. 发明申请
    • METHOD FOR CHEMICALLY TREATING A SUBSTRATE
    • 化学处理基材的方法
    • US20110183524A1
    • 2011-07-28
    • US13059560
    • 2009-09-29
    • Andreas TeppeBerthold SchumDieter FrankeIngo SchwirtlichKnut VaasWilfried Schmidt
    • Andreas TeppeBerthold SchumDieter FrankeIngo SchwirtlichKnut VaasWilfried Schmidt
    • H01L21/306
    • H01L21/30604H01L21/67057H01L21/67086H01L31/1804Y02E10/547Y02P70/521
    • A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium. In this way, the atmosphere can be adjusted in relation to the partial pressures of the components in the process medium such that the top surface preserves hydrophobic characteristics.
    • 一种用于通过使具有流体化学活性的处理介质与至少底物的底表面接触来化学处理具有底表面,顶表面和侧表面的盘形基底的方法。 衬底相对于处理介质移动,同时在衬底,衬底介质和围绕衬底和介质的气氛之间形成三线。 为了化学去除错误,特别是在侧表面中,应当进行相对运动,同时避免处理介质与基板的顶表面的接触,其中三线形成在面向侧面的所需高度 相对于衬底和处理介质之间的相对运动而离开工艺介质流动侧。 以这种方式,可以相对于处理介质中的组分的分压来调整气氛,使得顶表面保持疏水特性。