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    • 3. 发明授权
    • Semiconductor device conduction state detection circuit
    • 半导体器件导通状态检测电路
    • US4298810A
    • 1981-11-03
    • US111790
    • 1980-01-14
    • Edward H. DingerAllen M. Ritter
    • Edward H. DingerAllen M. Ritter
    • G01R31/26H02M7/155H03K17/18H03K17/72
    • H03K17/18
    • A circuit for detecting the conductive state of a semiconductor device (e.g., a thyristor) which exhibits a substantial terminal to terminal voltage difference between its conducting and nonconducting states and which utilizes a gating signal to render the device conductive includes a bistable circuit (e.g., a flip-flop) which is placed into a first stable state with the occurrence of the gating signal. A voltage sensing circuit disposed across the semiconductor device is utilized to develop an additional signal which is applied to the bistable circuit to thereby place that latter circuit into its second stable state. The state of the bistable circuit is representative of the conductive state of the semiconductor device.
    • 用于检测在导通状态和非导通状态之间呈现终端电压差的实质端子并利用门控信号使器件导通的半导体器件(例如晶闸管)的导电状态的电路包括双稳态电路(例如, 触发器),其随着门控信号的发生而被置于第一稳定状态。 利用设置在半导体器件两侧的电压感测电路来开发附加信号,该附加信号被施加到双稳态电路,从而将后一个电路置于其第二稳定状态。 双稳态电路的状态代表半导体器件的导电状态。