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    • 2. 发明申请
    • SURFACE MODIFICATION OF ePTFE AND IMPLANTS USING THE SAME
    • 使用它的ePTFE和植入物的表面修饰
    • US20100023111A1
    • 2010-01-28
    • US12570503
    • 2009-09-30
    • Alexey KondyurinManfred Franz Maitz
    • Alexey KondyurinManfred Franz Maitz
    • A61F2/06A61K31/718
    • B05D3/144A61L27/16A61L27/38A61L27/54A61L31/005A61L31/048A61L31/16A61L2300/606A61L2400/18B29C59/14B29C59/142B29K2027/18B29L2031/7532C08J7/123C08J2327/18C08L27/18
    • A method for modifying an ePTFE surface by plasma immersion ion implantation includes the steps of providing an ePTFE material in a chamber suitable for plasma treatment; providing a continuous low energy plasma discharge onto the sample; and applying negative high voltage pulses of short duration to form a high energy ion flux from the plasma discharge to generate ions which form free radials on the surface of the ePTFE material without changing the molecular and/or physical structure below the surface to define a modified ePTFE surface. The step of applying the high voltage pulses modifies the surface of the ePTFE without destroying the node and fibril structure of the ePTFE, even when the step of applying the high voltage pulses etches and/or carburizes the surface of the ePTFE. The modified surface may have a depth of about 30 nm to about 500 nm. The ions are dosed onto the ePTFE sample at concentrations or doses from about 1013 ions/cm2 to about 1016 ions/cm2.
    • 通过等离子体浸没离子注入来修饰ePTFE表面的方法包括在适于等离子体处理的室中提供ePTFE材料的步骤; 在样品上提供连续的低能量等离子体放电; 并且施加短持续时间的负高电压脉冲以形成来自等离子体放电的高能离子通量,以在ePTFE材料的表面上产生形成自由径向的离子,而不改变表面下方的分子和/或物理结构,以限定修饰的 ePTFE表面。 施加高电压脉冲的步骤修改ePTFE的表面,而不破坏ePTFE的节点和原纤维结构,即使施加高电压脉冲的步骤蚀刻和/或渗碳ePTFE的表面时。 改性表面可以具有约30nm至约500nm的深度。 离子以约1013个离子/ cm 2至约1016个离子/ cm 2的浓度或剂量计量到ePTFE样品上。
    • 4. 发明申请
    • Surface modification of ePTFE and implants using the same
    • ePTFE和使用其的植入物的表面改性
    • US20070050007A1
    • 2007-03-01
    • US11227378
    • 2005-09-15
    • Alexey KondyurinManfred Maitz
    • Alexey KondyurinManfred Maitz
    • A61F2/06
    • B05D3/144A61L27/16A61L27/38A61L27/54A61L31/005A61L31/048A61L31/16A61L2300/606A61L2400/18B29C59/14B29C59/142B29K2027/18B29L2031/7532C08J7/123C08J2327/18C08L27/18
    • A method for modifying an ePTFE surface by plasma immersion ion implantation includes the steps of providing an ePTFE material in a chamber suitable for plasma treatment; providing a continuous low energy plasma discharge onto the sample; and applying negative high voltage pulses of short duration to form a high energy ion flux from the plasma discharge to generate ions which form free radials on the surface of the ePTFE material without changing the molecular and/or physical structure below the surface to define a modified ePTFE surface. The step of applying the high voltage pulses modifies the surface of the ePTFE without destroying the node and fibril structure of the ePTFE, even when the step of applying the high voltage pulses etches and/or carburizes the surface of the ePTFE. The modified surface may have a depth of about 30 nm to about 500 nm. The ions are dosed onto the ePTFE sample at concentrations or doses from about 1013 ions/cm2 to about 1016 ions/cm2.
    • 通过等离子体浸没离子注入来修饰ePTFE表面的方法包括在适于等离子体处理的室中提供ePTFE材料的步骤; 在样品上提供连续的低能量等离子体放电; 并且施加短持续时间的负高电压脉冲以形成来自等离子体放电的高能离子通量,以在ePTFE材料的表面上产生形成自由径向的离子,而不改变表面下方的分子和/或物理结构,以限定修饰的 ePTFE表面。 施加高电压脉冲的步骤修改ePTFE的表面,而不破坏ePTFE的节点和原纤维结构,即使施加高电压脉冲的步骤蚀刻和/或渗碳ePTFE的表面时。 改性表面可以具有约30nm至约500nm的深度。 离子以浓度或剂量从约10 12个/ cm 2至约10 16个/ cm 2的浓度加到ePTFE样品上 > 2
    • 6. 发明授权
    • Surface modification of ePTFE and implants using the same
    • ePTFE和使用其的植入物的表面改性
    • US07597924B2
    • 2009-10-06
    • US11227378
    • 2005-09-15
    • Alexey KondyurinManfred Franz Maitz
    • Alexey KondyurinManfred Franz Maitz
    • B05D3/06A61L33/00H05H1/00A61L2/00
    • B05D3/144A61L27/16A61L27/38A61L27/54A61L31/005A61L31/048A61L31/16A61L2300/606A61L2400/18B29C59/14B29C59/142B29K2027/18B29L2031/7532C08J7/123C08J2327/18C08L27/18
    • A method for modifying an ePTFE surface by plasma immersion ion implantation includes the steps of providing an ePTFE material in a chamber suitable for plasma treatment; providing a continuous low energy plasma discharge onto the sample; and applying negative high voltage pulses of short duration to form a high energy ion flux from the plasma discharge to generate ions which form free radials on the surface of the ePTFE material without changing the molecular and/or physical structure below the surface to define a modified ePTFE surface. The step of applying the high voltage pulses modifies the surface of the ePTFE without destroying the node and fibril structure of the ePTFE, even when the step of applying the high voltage pulses etches and/or carburizes the surface of the ePTFE. The modified surface may have a depth of about 30 nm to about 500 nm. The ions are dosed onto the ePTFE sample at concentrations or doses from about 1013 ions/cm2 to about 1016 ions/cm2.
    • 通过等离子体浸没离子注入来修饰ePTFE表面的方法包括在适于等离子体处理的室中提供ePTFE材料的步骤; 在样品上提供连续的低能量等离子体放电; 并且施加短持续时间的负高电压脉冲以形成来自等离子体放电的高能离子通量,以在ePTFE材料的表面上产生形成自由径向的离子,而不改变表面下方的分子和/或物理结构,以限定修饰的 ePTFE表面。 施加高电压脉冲的步骤修改ePTFE的表面,而不破坏ePTFE的节点和原纤维结构,即使施加高电压脉冲的步骤蚀刻和/或渗碳ePTFE的表面时。 改性表面可以具有约30nm至约500nm的深度。 离子以约1013个离子/ cm 2至约1016个离子/ cm 2的浓度或剂量计量到ePTFE样品上。