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    • 1. 发明授权
    • Semiconductor chemical sensor device with specific heater structure
    • 具有特定加热器结构的半导体化学传感器
    • US5786608A
    • 1998-07-28
    • US806816
    • 1997-02-26
    • Lionel LescouzeresAlain SeubeAnne-Marie Gue
    • Lionel LescouzeresAlain SeubeAnne-Marie Gue
    • G01N27/12H01L23/58G01N7/00H01C7/00
    • G01N27/12
    • A semiconductor device (50) comprises a semiconductor base, a heater (20) formed over the semiconductor base from conductive material, such as polysilicon, and a layer (22) for heating by the heater. The heater (20) comprises first (24) and second (26) arms extending over the semiconductor base from a heater portion (28) and an opening (34) extending vertically through the heater portion (28). A first heater contact (30) is coupled to an end of the first arm (24) and a second heater contact (32) is coupled to an end of the second arm (26). The layer (22) is formed over the opening (34) and heater portion (28) such that a vertical axis through the center (36) of the opening (34) extends through the center (36) of the layer (22).
    • 半导体器件(50)包括半导体基底,从诸如多晶硅的导电材料形成在半导体基底上的加热器(20)和用于通过加热器加热的层(22)。 加热器(20)包括从加热器部分(28)延伸到半导体基底上的第一(24)和第二臂(26)以及垂直延伸穿过加热器部分(28)的开口(34)。 第一加热器接触件(30)联接到第一臂(24)的端部,并且第二加热器接触件(32)联接到第二臂(26)的端部。 层(22)形成在开口(34)和加热器部分(28)上方,使得通过开口(34)的中心(36)的垂直轴线延伸穿过层(22)的中心(36)。