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    • 2. 发明授权
    • Method for the optical alignment of designs in two near planes and
alignment apparatus for performing this method
    • 用于执行该方法的两个近平面中的设计的光学对准方法和对准装置
    • US4311389A
    • 1982-01-19
    • US75681
    • 1979-09-13
    • Bernard FayJacques TrotelAlain Frichet
    • Bernard FayJacques TrotelAlain Frichet
    • H05K3/00G02B5/18G02B5/32G02B7/00G02B27/42G03F9/00G01B9/02G01B11/00
    • G03F9/7049
    • The invention relates to the alignment of designs in two near planes, whereby one (the mask) carries a design which is to be reproduced on the second (the pattern).The invention relates to a method for the optical alignment of these two planes using a pair of marks formed by a lens (4) having linear Fresnel zones inscribed on the mask (1) and a reflecting grating (3) of appropriate width inscribed on the pattern (2). The illumination by a parallel beam of monochromatic light of the lens with Fresnel zones produces on the pattern a substantially rectangular illumination spot which, when made to coincide with the line inscribed on the pattern is reflected or transmitted, and supplies a detected intensity maximum or minimum depending on whether the lines reflects more or less than the remainder of the pattern. The invention also relates to an optical alignment apparatus for performing this method.The invention applies to the alignment of lithographic X-ray masks or photographic masks with respect to patterns on which reproduction is to take place.
    • 本发明涉及两个近平面中设计的对准,其中一个(掩模)承载将在第二(图案)上再现的设计。 本发明涉及一种使用由掩模(1)上刻有线性菲涅尔区的透镜(4)形成的一对标记和这些两个平面上的适当宽度的反射光栅(3)进行光学对准的方法。 模式(2)。 通过具有菲涅耳区的透镜的平行光的照明在图案上产生基本上矩形的照明光斑,当与图案上刻有的线重合时,其被反射或透射,并且将检测到的光强度最大或最小 取决于线条是否反映多于或者少于图案的其余部分。 本发明还涉及一种用于执行该方法的光学对准装置。 本发明适用于相对于其上进行再现的图案的光刻X射线掩模或照相掩模的对准。