专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07932567B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07932567B2
公开(公告)日：2011-04-26
申请号：US12389897
申请日：2009-02-20
申请人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
发明人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
IPC分类号： H01L27/088
CPC分类号： H01L21/845 , H01L21/823431 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： Disclosed herein is a semiconductor device including: first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
摘要翻译：本文公开了一种半导体器件，包括：第一和第二晶体管，第一和第二晶体管中的每一个形成有多个鳍式晶体管，并且第一和第二晶体管并联连接以电共享源，其中多个鳍晶体管各自包括翅片激活层，鳍状物活化层从半导体衬底突出，用作源的源极一端形成，并且在鳍激活层的另一端上形成漏极层，以形成沟道翅片激活层平行地彼此相邻布置，并且设置漏极层使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。

2. 发明授权

US07858484B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07858484B2
公开(公告)日：2010-12-28
申请号：US12101596
申请日：2008-04-11
申请人： Akira Mizumura
发明人： Akira Mizumura
IPC分类号： H01L21/20
CPC分类号： H01L27/0629 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, an insulating film disposed on the substrate, a resistor groove disposed in the insulating film, and a resistor disposed in the resistor groove. The resistor is separated from all side surfaces of the resistor groove by a predetermined distance.
摘要翻译：半导体器件包括衬底，设置在衬底上的绝缘膜，设置在绝缘膜中的电阻器沟槽和设置在电阻器沟槽中的电阻器。电阻器与电阻器凹槽的所有侧表面分开预定距离。

3. 发明申请

US20090230483A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090230483A1
公开(公告)日：2009-09-17
申请号：US12389897
申请日：2009-02-20
申请人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
发明人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
IPC分类号： H01L27/088
CPC分类号： H01L21/845 , H01L21/823431 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： Disclosed herein is a semiconductor device including: first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
摘要翻译：本文公开了一种半导体器件，包括：第一和第二晶体管，第一和第二晶体管中的每一个形成有多个鳍式晶体管，并且第一和第二晶体管并联连接以电共享源，其中多个鳍晶体管各自包括翅片激活层，鳍状物活化层从半导体衬底突出，用作源的源极一端形成，并且在鳍激活层的另一端上形成漏极层，以形成沟道翅片激活层平行地彼此相邻布置，并且设置漏极层使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。

4. 发明授权

US08178933B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08178933B2
公开(公告)日：2012-05-15
申请号：US13039684
申请日：2011-03-03
申请人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
发明人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
IPC分类号： H01L27/088
CPC分类号： H01L21/845 , H01L21/823431 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： A semiconductor device including first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
摘要翻译：一种包括第一和第二晶体管的半导体器件，第一和第二晶体管中的每一个形成有多个鳍式晶体管，并且第一和第二晶体管并联连接以电共享源，其中多个鳍式晶体管每个包括翅片活化层，从半导体衬底突出的翅片活化层，在一端形成源极的源极层和翅片活化层的另一端的漏极层，以形成沟道区域，鳍状物激活层平行地彼此相邻布置，并且漏极层被布置成使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。

5. 发明申请

US20110186932A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110186932A1
公开(公告)日：2011-08-04
申请号：US13039684
申请日：2011-03-03
申请人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
发明人： Akira Mizumura , Hiroaki Ammo , Tetsuya Oishi
IPC分类号： H01L27/088
CPC分类号： H01L21/845 , H01L21/823431 , H01L27/0207 , H01L27/088 , H01L27/0886 , H01L27/1203 , H01L29/66795 , H01L29/785
摘要： A semiconductor device including first and second transistors, each of the first and second transistors being formed with a plurality of fin transistors, and the first and second transistors being connected in parallel to electrically share a source, wherein the plurality of fin transistors each include a fin activation layer, the fin activation layer protruding from a semiconductor substrate, a source layer serving as the source being formed on one end, and a drain layer on the other end of the fin activation layer so as to form a channel region, the fin activation layers are arranged adjacent to each other in parallel, and the drain layers are disposed so that the currents flow through the plurality of fin transistors in opposite directions between the first and second transistors.
摘要翻译：一种包括第一和第二晶体管的半导体器件，第一和第二晶体管中的每一个形成有多个鳍式晶体管，并且第一和第二晶体管并联连接以电共享源，其中多个鳍式晶体管每个包括翅片活化层，从半导体衬底突出的翅片活化层，在一端形成源极的源极层和翅片活化层的另一端的漏极层，以形成沟道区域，鳍状物激活层平行地彼此相邻布置，并且漏极层被布置成使得电流在第一和第二晶体管之间沿相反方向流过多个鳍式晶体管。

6. 发明申请

US20100220227A1 Method of producing a solid-state image pickup apparatus, solid-state image pickup apparatus, and electronic apparatus 有权
标题翻译：固体摄像装置的制造方法，固体摄像装置以及电子装置
公开(公告)号：US20100220227A1
公开(公告)日：2010-09-02
申请号：US12656044
申请日：2010-01-14
申请人： Akira Mizumura
发明人： Akira Mizumura
IPC分类号： H04N5/335 , H01L31/18
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14641 , H01L27/14689
摘要： A method of producing a solid-state image pickup apparatus, including the steps of: forming a plurality of light-receiving portions on a substrate; forming a plurality of transfer gates to be connected to the plurality of light-receiving portions formed on the substrate; forming an insulation film on the substrate; exposing a base by etching the insulation film so that the etched part of the insulation film between the adjacent transfer gates tapers away; and injecting an impurity into the exposed part using the insulation film that has remained after the etching as a mask to thus form an impurity injection portion.
摘要翻译：一种制造固态图像拾取装置的方法，包括以下步骤：在基板上形成多个光接收部分; 形成要连接到形成在所述基板上的多个光接收部分的多个传输门; 在基板上形成绝缘膜; 通过蚀刻绝缘膜来暴露基底，使得相邻传输门之间的绝缘膜的蚀刻部分逐渐变细; 并且使用在蚀刻后残留的绝缘膜作为掩模将杂质注入到暴露部分中，从而形成杂质注入部分。

7. 发明授权

US08329490B2 Method of producing a solid-state image pickup apparatus, solid-state image pickup apparatus, and electronic apparatus 有权
标题翻译：固体摄像装置的制造方法，固体摄像装置以及电子装置
公开(公告)号：US08329490B2
公开(公告)日：2012-12-11
申请号：US12656044
申请日：2010-01-14
申请人： Akira Mizumura
发明人： Akira Mizumura
IPC分类号： H01L21/00 , H04N3/14
CPC分类号： H01L27/14806 , H01L27/14603 , H01L27/14641 , H01L27/14689
摘要： A method of producing a solid-state image pickup apparatus, including the steps of: forming a plurality of light-receiving portions on a substrate; forming a plurality of transfer gates to be connected to the plurality of light-receiving portions formed on the substrate; forming an insulation film on the substrate; exposing a base by etching the insulation film so that the etched part of the insulation film between the adjacent transfer gates tapers away; and injecting an impurity into the exposed part using the insulation film that has remained after the etching as a mask to thus form an impurity injection portion.
摘要翻译：一种制造固态图像拾取装置的方法，包括以下步骤：在基板上形成多个光接收部分; 形成要连接到形成在所述基板上的多个光接收部分的多个传输门; 在基板上形成绝缘膜; 通过蚀刻绝缘膜来暴露基底，使得相邻传输门之间的绝缘膜的蚀刻部分逐渐变细; 并且使用在蚀刻后残留的绝缘膜作为掩模将杂质注入到暴露部分中，从而形成杂质注入部分。

8. 发明申请

US20080258232A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080258232A1
公开(公告)日：2008-10-23
申请号：US12101596
申请日：2008-04-11
申请人： Akira Mizumura
发明人： Akira Mizumura
IPC分类号： H01L27/06 , H01L21/8234
CPC分类号： H01L27/0629 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a substrate, an insulating film disposed on the substrate, a resistor groove disposed in the insulating film, and a resistor disposed in the resistor groove. The resistor is separated from all side surfaces of the resistor groove by a predetermined distance.
摘要翻译：半导体器件包括衬底，设置在衬底上的绝缘膜，设置在绝缘膜中的电阻器沟槽和设置在电阻器沟槽中的电阻器。电阻器与电阻器凹槽的所有侧表面分开预定距离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式