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1. 发明授权

US07067347B2 Method of manufacturing optical semiconductor integrated circuit device 失效
标题翻译：光半导体集成电路器件的制造方法
公开(公告)号：US07067347B2
公开(公告)日：2006-06-27
申请号：US10948740
申请日：2004-09-24
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L21/00
CPC分类号： H01L31/18 , H01L27/14683
摘要： In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.
摘要翻译：在现有的光学半导体集成电路器件中，作为防反射膜的氮化硅膜在蚀刻绝缘膜时用作蚀刻阻挡膜，并且通过湿蚀刻，绝缘膜全部被去除一次。因此，存在加工精度差的问题。在根据本发明的光半导体集成电路器件中，在硅衬底的顶表面上形成多层布线层之后，通过光电二极管的抗反射膜的顶表面上的绝缘层被除去干蚀刻手段。此时，使用多晶硅膜作为蚀刻停止膜。因此，在根据本发明的光电二极管中，尽管使用干法蚀刻，但是由于作为防反射膜的氮化硅膜未被过度蚀刻，所以可以抑制其膜厚分散。结果，根据本发明的光电二极管可以实现入射光的灵敏度的提高，并且可以实现小型化结构。

2. 发明授权

US07473945B2 Optical semiconductor integrated circuit device 有权
标题翻译：光半导体集成电路器件
公开(公告)号：US07473945B2
公开(公告)日：2009-01-06
申请号：US11086989
申请日：2005-03-23
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14623 , H01L27/1463
摘要： Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step coverage of a light shadowing film formed on the insulating film so as to cover the insulating film. By the improvement of the step coverage of the opening portion, the light shadowing film located on a plane of the light shadowing film of the photodiode is not broken. A problem that a conventional light shadowing film is broken is solved in the photodiode for a blue laser beam.
摘要翻译：公开了一种光学半导体集成电路器件，其在绝缘层中具有开口部分，其形成在光电二极管的光接收区域中。因此，开口部分的台阶减小，导致形成在绝缘膜上的遮光膜的台阶覆盖率得以改善以覆盖绝缘膜。通过提高开口部的台阶覆盖率，位于光电二极管的遮光膜的平面上的遮光膜不会破裂。在蓝色激光束的光电二极管中解决了传统的遮光膜被破坏的问题。

3. 发明授权

US07235418B2 Manufacturing method of optical semiconductor integrated circuit device 有权
标题翻译：光半导体集成电路器件的制造方法
公开(公告)号：US07235418B2
公开(公告)日：2007-06-26
申请号：US10949707
申请日：2004-09-27
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L21/00
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/1463 , H01L27/14681 , H01L31/18
摘要： In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.
摘要翻译：在现有的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层。因此，难以将光电二极管的上表面的绝缘层的膜厚均匀化。因此，存在导致光入射波动的绝缘层的结构的问题，从而不能获得对光的期望的敏感度。在根据本发明的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层之后，将光电二极管的防反射膜的顶表面上的绝缘层干蚀刻去除。此时，使用阻挡金属层作为蚀刻停止膜。因此，在本发明中，可以简化制造工艺，并且可以实现采用干蚀刻小型化。此外，由于防反射膜从绝缘层露出，因此可以抑制入射光的波动，并且可以提高对光的灵敏度。

4. 发明申请

US20050118815A1 Method of manufacturing optical semiconductor integrated circuit device 失效
标题翻译：光半导体集成电路器件的制造方法
公开(公告)号：US20050118815A1
公开(公告)日：2005-06-02
申请号：US10948740
申请日：2004-09-24
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L27/14 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/461 , H01L21/82 , H01L27/06 , H01L31/10 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14683
摘要： In an existing optical semiconductor integrated circuit device, a silicon nitride film that is an anti-reflection film is used as an etching stopper film at the etching of an insulating film and by means of wet etching the insulating film is removed once for all. Accordingly, there is a problem in that the processing accuracy is poor. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a silicon substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is removed by means of dry etching. At this time, a polycrystal silicon film is used as an etching stopper film. Thereby, in the photodiode according to the invention, although the dry etching is used, since a silicon nitride film that is an anti-reflection film is not over-etched, the dispersion of film thickness thereof can be inhibited from occurring. As a result, a photodiode according to the present invention can realize an improvement in the sensitivity of incident light and a miniaturization structure can be realized.
摘要翻译：在现有的光学半导体集成电路器件中，作为防反射膜的氮化硅膜在蚀刻绝缘膜时用作蚀刻阻挡膜，并且通过湿蚀刻，绝缘膜全部被去除一次。因此，存在加工精度差的问题。在根据本发明的光半导体集成电路器件中，在硅衬底的顶表面上形成多层布线层之后，通过光电二极管的抗反射膜的顶表面上的绝缘层被除去干蚀刻手段。此时，使用多晶硅膜作为蚀刻停止膜。因此，在根据本发明的光电二极管中，尽管使用干法蚀刻，但是由于作为防反射膜的氮化硅膜未被过度蚀刻，所以可以抑制其膜厚分散。结果，根据本发明的光电二极管可以实现入射光的灵敏度的提高，并且可以实现小型化结构。

5. 发明申请

US20050218417A1 Optical semiconductor integrated circuit device 有权
标题翻译：光半导体集成电路器件
公开(公告)号：US20050218417A1
公开(公告)日：2005-10-06
申请号：US11086989
申请日：2005-03-23
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L27/14 , H01L27/146 , H01L33/00
CPC分类号： H01L27/14643 , H01L27/14623 , H01L27/1463
摘要： Disclosed is an optical semiconductor integrated circuit device has an opening portion in an insulating layer, which is formed in a light receiving region of a photodiode stepwise. Thus, a step of the opening portion is reduced, leading to an improvement of a step coverage of a light shadowing film formed on the insulating film so as to cover the insulating film. By the improvement of the step coverage of the opening portion, the light shadowing film located on a plane of the light shadowing film of the photodiode is not broken. A problem that a conventional light shadowing film is broken is solved in the photodiode for a blue laser beam.
摘要翻译：公开了一种光学半导体集成电路器件，其在绝缘层中具有开口部分，其形成在光电二极管的光接收区域中。因此，开口部分的台阶减小，导致形成在绝缘膜上的遮光膜的台阶覆盖率得以改善以覆盖绝缘膜。通过提高开口部的台阶覆盖率，位于光电二极管的遮光膜的平面上的遮光膜不会破裂。在蓝色激光束的光电二极管中解决了传统的遮光膜被破坏的问题。

6. 发明申请

US20050106767A1 Manufacturing method of optical semiconductor integrated circuit device 有权
标题翻译：光半导体集成电路器件的制造方法
公开(公告)号：US20050106767A1
公开(公告)日：2005-05-19
申请号：US10949707
申请日：2004-09-27
申请人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
发明人： Tsuyoshi Takahashi , Katsuya Okabe , Akira Hatsugai
IPC分类号： H01L27/14 , H01L21/00 , H01L21/311 , H01L21/822 , H01L31/10 , H01L31/12 , H01L31/18
CPC分类号： H01L31/10 , H01L27/1443 , H01L27/1463 , H01L27/14681 , H01L31/18
摘要： In an existing optical semiconductor integrated circuit device, a multi-layered wiring layer is formed on a top surface of a substrate. Therefore, a film thickness of an insulating layer on a top surface of a photodiode could be uniformed with difficulty. Thus there was a problem in the constitution of the insulating layer wherein light incidence was caused to fluctuate, and thereby a desired sensitivity to light could not be obtained. In an optical semiconductor integrated circuit device according to the present invention, after a multi-layered wiring layer is formed on a top surface of a substrate, an insulating layer on a top surface of an anti-reflection film of a photodiode is dry-etched to remove. At this time, a barrier metal layer is used as an etching stopper film. Thereby, in the invention, a manufacturing process can be simplified and owing to adoption of the dry etching miniaturization can be realized. Furthermore, since the anti-reflection film is exposed from the insulating layer, fluctuation of incident light can be suppressed and the sensitivity to light can be improved.
摘要翻译：在现有的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层。因此，难以将光电二极管的上表面的绝缘层的膜厚均匀化。因此，存在导致光入射波动的绝缘层的结构的问题，从而不能获得对光的期望的敏感度。在根据本发明的光半导体集成电路器件中，在衬底的顶表面上形成多层布线层之后，将光电二极管的防反射膜的顶表面上的绝缘层干蚀刻去除。此时，使用阻挡金属层作为蚀刻停止膜。因此，在本发明中，可以简化制造工艺，并且可以实现采用干蚀刻小型化。此外，由于防反射膜从绝缘层露出，因此可以抑制入射光的波动，并且可以提高对光的灵敏度。

7. 发明授权

US6114744A Semiconductor integration device and fabrication method of the same 失效
标题翻译：半导体集成器件
公开(公告)号：US6114744A
公开(公告)日：2000-09-05
申请号：US38885
申请日：1998-03-12
申请人： Masayuki Kawaguchi , Yasunari Tagami , Hirotsugu Hata , Akira Hatsugai
发明人： Masayuki Kawaguchi , Yasunari Tagami , Hirotsugu Hata , Akira Hatsugai
IPC分类号： H01L21/331 , H01L29/423 , H01L29/732
CPC分类号： H01L29/66272 , H01L29/42304
摘要： A lead electrode is formed to expose an active base region. A lead electrode for an emitter electrode is formed on the lead electrode in an emitter region, through an insulating film. The insulating film on the lead electrode is then etched to form a contact hole. After that, the emitter contact hole is formed to expose the lead electrode. Also, a silicon nitride film SN is interposed between the lead electrode and insulating film and between the lead electrode and LOCOS oxide film each to decrease resistance of the lead electrodes.
摘要翻译：形成引线电极以暴露活性碱性区域。用于发射极的引线电极通过绝缘膜在发射极区域的引线电极上形成。然后对引线电极上的绝缘膜进行蚀刻以形成接触孔。之后，形成发射极接触孔以露出引线电极。此外，在引线电极和绝缘膜之间以及引线电极和LOCOS氧化物膜之间插入氮化硅膜SN，以降低引线电极的电阻。

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