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1. 发明授权

US07851884B2 Field-effect transistor, semiconductor chip and semiconductor device 失效
标题翻译：场效晶体管，半导体芯片和半导体器件
公开(公告)号：US07851884B2
公开(公告)日：2010-12-14
申请号：US12232788
申请日：2008-09-24
申请人： Shuji Asai , Akira Fujihara , Makoto Matsunoshita , Naoki Sakura , Seiji Ichikawa
发明人： Shuji Asai , Akira Fujihara , Makoto Matsunoshita , Naoki Sakura , Seiji Ichikawa
IPC分类号： H01L23/48
CPC分类号： H01L29/7783 , H01L29/66462 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/12032 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
摘要： A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a semiconductor device having the semiconductor chip. The FET includes a GaAs substrate on which are built up an i-type GaAs layer, an i-type InGaAs two-dimensional electron gas layer and an n-type AlGaAs electron supply layer. A gate electrode is provided on and in linear Schottky contact with the n-type AlGaAs electron supply layer. A n-type InGaP etching stop layer and then an n-type GaAs contact layer at the same lateral position are built up on the n-type AlGaAs electron supply layer, these being spaced away from both sides of the gate electrode. A source electrode and a drain electrode are provided on the n-type GaAs contact layer and are spaced away from edges of the contact layer as electrodes that make band-shaped ohmic contact.
摘要翻译：具有优异的均匀性和生产率并且具有低噪声系数和高相关增益作为高频性能的FET，具有该FET的半导体芯片和具有半导体芯片的半导体器件。该FET包括GaAs衬底，其上构建有i型GaAs层，i型InGaAs二维电子气体层和n型AlGaAs电子供应层。栅电极设置在与n型AlGaAs电子供应层的线性肖特基接触中。在n型AlGaAs电子供给层上形成n型InGaP蚀刻停止层，然后在同一横向位置形成n型GaAs接触层，这些与栅电极的两侧间隔开。源电极和漏电极设置在n型GaAs接触层上，并且与接触层的边缘间隔开，作为带状欧姆接触的电极。

2. 发明授权

US5785763A Electron-gun evaporation system having evaporation-source stream regulator 失效
标题翻译：具有蒸发源流调节器的电子枪蒸发系统
公开(公告)号：US5785763A
公开(公告)日：1998-07-28
申请号：US521029
申请日：1995-08-29
申请人： Kazuhiko Onda , Yasuko Hori , Akira Fujihara
发明人： Kazuhiko Onda , Yasuko Hori , Akira Fujihara
IPC分类号： C23C14/30 , H01J37/305 , C23C16/00
CPC分类号： H01J37/3053 , C23C14/30
摘要： A collimator is provided in an evaporation chamber to prevent the stray electrons from reaching a semiconductor substrate on which a film of the source is deposited. The collimator has a wall that prevent the stray electrons from reaching the evaporation object and a window that allows the gaseous evaporation source to travel to the object. The problem caused by the stray electrons can be solved with a simple structure, realizing a better evaporation process on the substrate.
摘要翻译：在蒸发室中设置准直器以防止杂散电子到达沉积有源膜的半导体衬底。准直器具有防止杂散电子到达蒸发物体的壁和允许气态蒸发源行进到物体的窗口。杂散电子引起的问题可以通过简单的结构来解决，从而在衬底上实现更好的蒸发过程。

3. 发明授权

US08492904B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08492904B2
公开(公告)日：2013-07-23
申请号：US12762697
申请日：2010-04-19
申请人： Akira Fujihara
发明人： Akira Fujihara
IPC分类号： H01L23/522 , H01L21/764 , H01L23/535 , H01L21/768
CPC分类号： H01L23/4824 , H01L23/4821 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： One aspect of the present invention is a semiconductor device including: a semiconductor substrate; a first wiring that is formed on the semiconductor substrate; a second wiring that is formed to cross over the first wiring with a space interposed therebetween at a cross portion in which the first wiring and the second wiring cross each other; a protective film that is formed on the semiconductor substrate to cover at least a part of the first wiring, the part being located under the second wiring in the cross portion; and an insulator film that is formed in an island shape on the protective film under the second wiring in the cross portion to be located between edges of the protective film and to cover the first wiring in the cross portion.
摘要翻译：本发明的一个方面是一种半导体器件，包括：半导体衬底; 形成在所述半导体基板上的第一布线; 第二布线，其形成为在第一布线和第二布线彼此交叉的交叉部分处跨过第一布线而间隔开的空间; 形成在所述半导体基板上以覆盖所述第一布线的至少一部分的所述保护膜，所述部分位于所述第二布线的所述十字部分的下方; 以及绝缘体膜，其形成为岛状，位于保护膜的边缘之间的第二布线的保护膜下方，并且覆盖该十字部分中的第一布线。

4. 发明申请

US20100270687A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100270687A1
公开(公告)日：2010-10-28
申请号：US12762697
申请日：2010-04-19
申请人： Akira FUJIHARA
发明人： Akira FUJIHARA
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/4824 , H01L23/4821 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： One aspect of the present invention is a semiconductor device including: a semiconductor substrate; a first wiring that is formed on the semiconductor substrate; a second wiring that is formed to cross over the first wiring with a space interposed therebetween at a cross portion in which the first wiring and the second wiring cross each other; a protective film that is formed on the semiconductor substrate to cover at least a part of the first wiring, the part being located under the second wiring in the cross portion; and an insulator film that is formed in an island shape on the protective film under the second wiring in the cross portion to be located between edges of the protective film and to cover the first wiring in the cross portion.
摘要翻译：本发明的一个方面是一种半导体器件，包括：半导体衬底; 形成在所述半导体基板上的第一布线; 第二布线，其形成为在第一布线和第二布线彼此交叉的交叉部分处跨过第一布线而间隔开的空间; 形成在所述半导体基板上以覆盖所述第一布线的至少一部分的所述保护膜，所述部分位于所述第二布线的所述十字部分的下方; 以及绝缘体膜，其形成为岛状，位于保护膜的边缘之间的第二布线的保护膜下方，并且覆盖该十字部分中的第一布线。

5. 发明申请

US20080054302A1 FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20080054302A1
公开(公告)日：2008-03-06
申请号：US11844947
申请日：2007-08-24
申请人： Akira FUJIHARA
发明人： Akira FUJIHARA
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7783 , H01L29/0891
摘要： Disclosed is a field effect transistor including: an electron supplying layer made of AlGaAs; an interface stabilizing layer, provided on the electron supplying layer, and not containing Al; an etching stop layer, provided on the interface stabilizing layer, and made of TnGaP; and a contact layer, provided on the etching stop layer, and made of GaAs. This prevents a interfacial layer such as an AlGaAsP layer from being formed in the interface between the AlGaAs electron supplying layer and the InGaP etching stop layer, and prevents deterioration in the Schottky characteristic.
摘要翻译：公开了一种场效应晶体管，包括：由AlGaAs制成的电子供应层; 界面稳定层，设在电子供应层上，不含Al; 蚀刻停止层，设置在界面稳定层上，由TnGaP制成; 以及设置在蚀刻停止层上并由GaAs制成的接触层。这防止了在AlGaAs电子供给层和InGaP蚀刻停止层之间的界面中形成诸如AlGaAsP层的界面层，并且防止了肖特基特性的劣化。

6. 发明申请

US20090078966A1 Field-effect transistor, semiconductor chip and semiconductor device 失效
标题翻译：场效晶体管，半导体芯片和半导体器件
公开(公告)号：US20090078966A1
公开(公告)日：2009-03-26
申请号：US12232788
申请日：2008-09-24
申请人： Shuji Asai , Akira Fujihara , Makoto Matsunoshita , Naoki Sakura , Seiji Ichikawa
发明人： Shuji Asai , Akira Fujihara , Makoto Matsunoshita , Naoki Sakura , Seiji Ichikawa
IPC分类号： H01L29/778 , H01L23/48
CPC分类号： H01L29/7783 , H01L29/66462 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/12032 , H01L2924/13062 , H01L2924/00014 , H01L2924/00
摘要： A FET exhibiting excellent uniformity and productivity and having a low noise figure and high associated gain as high-frequency performance, a semiconductor chip having this FET and a semiconductor device having the semiconductor chip. The FET includes a GaAs substrate on which are built up an i-type GaAs layer, an i-type InGaAs two-dimensional electron gas layer and an n-type AlGaAs electron supply layer. A gate electrode is provided on and in linear Schottky contact with the n-type AlGaAs electron supply layer. A n-type InGaP etching stop layer and then an n-type GaAs contact layer at the same lateral position are built up on the n-type AlGaAs electron supply layer, these being spaced away from both sides of the gate electrode. A source electrode and a drain electrode are provided on the n-type GaAs contact layer and are spaced away from edges of the contact layer as electrodes that make band-shaped ohmic contact.
摘要翻译：具有优异的均匀性和生产率并且具有低噪声系数和高相关增益作为高频性能的FET，具有该FET的半导体芯片和具有半导体芯片的半导体器件。该FET包括GaAs衬底，其上构建有i型GaAs层，i型InGaAs二维电子气体层和n型AlGaAs电子供应层。栅电极设置在与n型AlGaAs电子供应层的线性肖特基接触中。在n型AlGaAs电子供给层上形成n型InGaP蚀刻停止层，然后在同一横向位置形成n型GaAs接触层，这些与栅电极的两侧间隔开。源电极和漏电极设置在n型GaAs接触层上，并且与接触层的边缘间隔开，作为带状欧姆接触的电极。

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