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1. 发明授权

US08058124B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08058124B2
公开(公告)日：2011-11-15
申请号：US12759091
申请日：2010-04-13
申请人： Masataka Ono , Akiko Fujita
发明人： Masataka Ono , Akiko Fujita
IPC分类号： H01L21/8249
CPC分类号： H01L29/66242
摘要： The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.
摘要翻译：提供了提供减小的电流泄漏和寄生电阻以实现稳定的电流增益的半导体器件。在由含有p型多晶硅膜和氮化硅膜的多层膜构成的遮阳板部分的下表面露出的p型多晶硅膜上生长第一多晶半导体层，同时生长第一半导体层，然后选择性地去除第一多晶半导体层。此外，第二种生长操作用于在不接触氮化硅膜的情况下在露出在遮阳板部分的下表面的p型多晶半导体膜的暴露部分上选择性地生长第二多晶半导体层和第三多晶半导体层，同时生长第二半导体层和第三半导体层，使得第三半导体层与第三多晶半导体层接触。

2. 发明授权

US5606079A Process for the selective hydroformylation of terminal olefin groups and its use in the preparation of 1,4-butanedial monoacetal 失效
标题翻译：末端烯烃基团的选择性羰基化方法及其在1,4-丁二醛单缩醛的制备中的应用
公开(公告)号：US5606079A
公开(公告)日：1997-02-25
申请号：US453762
申请日：1995-05-30
申请人： Shuji Ichikawa , Akiko Fujita , Naoko Sumitani , Yuji Ohgomori
发明人： Shuji Ichikawa , Akiko Fujita , Naoko Sumitani , Yuji Ohgomori
IPC分类号： B01J31/24 , C07B61/00 , C07D319/06 , C07F9/655
CPC分类号： C07F9/65515 , C07D319/06
摘要： A process for producing 1,4-butanedial monoacetal by reacting acrolein acetal with a synthesis gas containing carbon monoxide and hydrogen, in the presence of a rhodium catalyst and an accelerator of formula (I) ##STR1## wherein R.sup.1 and R.sup.2 each, independently, denote a hydrogen atom, a C.sub.1 -C.sub.20 alkyl group or a C.sub.6 -C.sub.20 aryl group, or R.sup.1 and R.sup.2 together form a --(CH.sub.2).sub.n -- group, n is an integer of from 2 to 7, R.sup.3 and R.sup.4 each, independently, denote halogen or a trifluoromethyl group, and p and q are each, independently, an integer of from 0 to 3, which process can also be extended to the hydroformylation of other compounds which contain an olefin group in a terminal position.
摘要翻译：在铑催化剂和式（I）的促进剂存在下，使丙烯醛缩醛与含有一氧化碳和氢气的合成气反应制备1,4-丁二醛单缩醛的方法，其中R1和R2各自独立地表示氢原子，C 1 -C 20烷基或C 6 -C 20芳基，或者R 1和R 2一起形成 - （CH 2）n - 基，n是2至7的整数，R 3和R 4 各自独立地表示卤素或三氟甲基，p和q各自独立地为0-3的整数，该方法也可以扩展到在末端含有烯烃基团的其它化合物的加氢甲酰基化。

3. 发明申请

US20100197122A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100197122A1
公开(公告)日：2010-08-05
申请号：US12759091
申请日：2010-04-13
申请人： Masataka ONO , Akiko FUJITA
发明人： Masataka ONO , Akiko FUJITA
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/66242
摘要： The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.
摘要翻译：提供了提供减小的电流泄漏和寄生电阻以实现稳定的电流增益的半导体器件。在由含有p型多晶硅膜和氮化硅膜的多层膜构成的遮阳板部分的下表面露出的p型多晶硅膜上生长第一多晶半导体层，同时生长第一半导体层，然后选择性地去除第一多晶半导体层。此外，第二种生长操作用于在不接触氮化硅膜的情况下在露出在遮阳板部分的下表面的p型多晶半导体膜的暴露部分上选择性地生长第二多晶半导体层和第三多晶半导体层，同时生长第二半导体层和第三半导体层，使得第三半导体层与第三多晶半导体层接触。

4. 发明授权

US07728358B2 Semiconductor device and method for manufacturing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07728358B2
公开(公告)日：2010-06-01
申请号：US12187619
申请日：2008-08-07
申请人： Masataka Ono , Akiko Fujita
发明人： Masataka Ono , Akiko Fujita
IPC分类号： H01L31/072 , H01L31/109
CPC分类号： H01L29/66242
摘要： The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.
摘要翻译：提供了提供减小的电流泄漏和寄生电阻以实现稳定的电流增益的半导体器件。在由含有p型多晶硅膜和氮化硅膜的多层膜构成的遮阳板部分的下表面露出的p型多晶硅膜上生长第一多晶半导体层，同时生长第一半导体层，然后选择性地去除第一多晶半导体层。此外，第二种生长操作用于在不接触氮化硅膜的情况下在露出在遮阳板部分的下表面的p型多晶半导体膜的暴露部分上选择性地生长第二多晶半导体层和第三多晶半导体层，同时生长第二半导体层和第三半导体层，使得第三半导体层与第三多晶半导体层接触。

5. 发明申请

US20090039393A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090039393A1
公开(公告)日：2009-02-12
申请号：US12187619
申请日：2008-08-07
申请人： Masataka ONO , Akiko FUJITA
发明人： Masataka ONO , Akiko FUJITA
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L29/66242
摘要： The semiconductor device, which provides reduced electric current leakage and parasitic resistance to achieve stable current gain, is provided. A first polycrystalline semiconductor layer is grown on a p-type polycrystalline silicon film exposed in a lower surface of a visor section composed of a multiple-layered film containing a p-type polycrystalline silicon film and a silicon nitride film, while growing the first semiconductor layer on a n-type collector layer, and then the first polycrystalline semiconductor layer is selectively removed. Further, a second growing operation for selectively growing the second polycrystalline semiconductor layer and the third polycrystalline semiconductor layer on the exposed portion of the p-type polycrystalline semiconductor film exposed in the lower surface of the visor section without contacting the silicon nitride film, while growing the second semiconductor layer and the third semiconductor layer, so that the third semiconductor layer is in contact with the third polycrystalline semiconductor layer.
摘要翻译：提供了提供减小的电流泄漏和寄生电阻以实现稳定的电流增益的半导体器件。在由含有p型多晶硅膜和氮化硅膜的多层膜构成的遮阳板部分的下表面露出的p型多晶硅膜上生长第一多晶半导体层，同时生长第一半导体层，然后选择性地去除第一多晶半导体层。此外，第二种生长操作用于在不接触氮化硅膜的情况下在露出在遮阳板部分的下表面的p型多晶半导体膜的暴露部分上选择性地生长第二多晶半导体层和第三多晶半导体层，同时生长第二半导体层和第三半导体层，使得第三半导体层与第三多晶半导体层接触。

6. 发明申请

US20050208177A1 Compositions for improving the flavor of alcoholic beverage made from grape 审中-公开
标题翻译：用于改善由葡萄制成的酒精饮料的风味的组合物
公开(公告)号：US20050208177A1
公开(公告)日：2005-09-22
申请号：US10509672
申请日：2003-04-15
申请人： Kazutaka Tsuruhami , Hitoshi Amano , Shigeharu Mori , Nami Goto , Isao Aramaki , Akiko Fujita
发明人： Kazutaka Tsuruhami , Hitoshi Amano , Shigeharu Mori , Nami Goto , Isao Aramaki , Akiko Fujita
IPC分类号： A23L19/00 , C12G1/022 , C12H1/00 , C12G1/00
CPC分类号： C12G1/0203 , C12H1/003
摘要： It is intended to provide novel compositions usable in improving the flavor of an alcoholic beverage made from grapes typified by wine. Namely, a composition usable in improving the flavor of an alcoholic beverage made from grapes which contains the culture of a strain belonging to a genus Aspergillus, Penicillium, Rhizopus, Rhizomucor, Talaromyces, Mortierella, Cryptococcus, Microbacterium, Corynebacterium or Actinoplanes and being capable of producing diglycosidase.
摘要翻译：旨在提供可用于改善由葡萄酒代表的葡萄制成的酒精饮料的风味的新型组合物。即，可用于改善由葡萄制成的含酒精饮料的风味的组合物，其中含有属于曲霉属，青霉属，根霉属，根霉属，塔拉霉菌属，高山被孢霉属，隐球菌属，微杆菌属，棒状杆菌属或溶胶球菌属的菌株的培养物，生产二糖苷酶。

7. 发明申请

US20090304859A1 Compositions for improving the flavor of alcoholic beverage made from grape 审中-公开
标题翻译：用于改善由葡萄制成的酒精饮料的风味的组合物
公开(公告)号：US20090304859A1
公开(公告)日：2009-12-10
申请号：US12461572
申请日：2009-08-17
申请人： Kazutaka Tsuruhami , Hitoshi Amano , Shigeharu Mori , Nami Goto , Isao Aramaki , Akiko Fujita
发明人： Kazutaka Tsuruhami , Hitoshi Amano , Shigeharu Mori , Nami Goto , Isao Aramaki , Akiko Fujita
IPC分类号： C12G1/022 , A23L1/212
CPC分类号： C12G1/0203 , C12H1/003
摘要： It is intended to provide novel compositions usable in improving the flavor of an alcoholic beverage made from grapes typified by wine. Namely, a composition usable in improving the flavor of an alcoholic beverage made from grapes which contains the culture of a strain belonging to a genus Aspergillus, Penicillium, Rhizopus, Rhizomucor, Talaromyces, Mortierella, Cryptococcus, Microbacterium, Corynebacterium or Actinoplanes and being capable of producing diglycosidase.
摘要翻译：旨在提供可用于改善由葡萄酒代表的葡萄制成的酒精饮料的风味的新型组合物。即，可用于改善由葡萄制成的含酒精饮料的风味的组合物，其中含有属于曲霉属，青霉属，根霉属，根霉属，塔拉霉菌属，高山被孢霉属，隐球菌属，微杆菌属，棒状杆菌属或溶胶球菌属的菌株的培养物，生产二糖苷酶。

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