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    • 1. 发明授权
    • Acoustic sensor for in-line continuous monitoring of gasses
    • 用于气体连续监测的声学传感器
    • US5768937A
    • 1998-06-23
    • US748599
    • 1996-11-13
    • Abdul WajidClarence HurdMelvin C. Hetzel
    • Abdul WajidClarence HurdMelvin C. Hetzel
    • G01F1/66G01N29/036G01N29/22G01F17/00
    • G01N29/036G01F1/662G01F1/667G01N29/22G01N2291/0222G01N2291/02836G01N2291/02881
    • An acoustic cell includes multiple acoustic cavities fluidly coupled together. At least two of the acoustic cavities have unequal lengths and cross sections. End segments of the acoustic cell are uniformly cylindrically shaped or conically shaped. A driver transducer at one end of the acoustic cell and a receiver transducer at another end of the acoustic cell are acoustically isolated from the acoustic cell. A pair of preferably metallic isolation diaphragms transmit acoustic signals to and from the transducers without significantly altering the phase-frequency characteristics of the acoustic signals. The acoustic cell operates as an acoustic resonator operating at frequencies lower than any possible self-resonance frequencies of the isolation diaphragms or the driver and receiver transducers. When a binary gas is flowed through the cell, a processor detects a resonant frequency of the gas within the cell to determine a composition of the gas.
    • 声学单元包括流体耦合在一起的多个声腔。 至少两个声腔具有不相等的长度和横截面。 声学单元的端部段是均匀的圆柱形或圆锥形的。 在声学单元的一端处的驱动器换能器和声学单元的另一端处的接收器换能器与声学单元进行声学隔离。 一对优选的金属隔离膜片将声信号传递到换能器而不显着地改变声信号的相位频率特性。 声学单元作为声学谐振器工作,频率低于隔离隔膜或驱动器和接收器换能器的任何可能的自谐振频率。 当二进制气体流过电池时,处理器检测电池内的气体的共振频率以确定气体的组成。
    • 2. 发明授权
    • Measuring and controlling deposition on a piezoelectric monitor crystal
    • 在压电监测晶体上测量和控制沉积
    • US5112642A
    • 1992-05-12
    • US505668
    • 1990-03-30
    • Abdul Wajid
    • Abdul Wajid
    • C23C14/54G01B7/06G01B17/02G01B17/06
    • G01B7/066
    • The thickness and rate of growth of a deposited film is monitored using a piezoelectric crystal sensor such as an AT-cut plano-convex crystal. The frequencies of the fundamental frequency and another resonance mode are measured prior to deposition, and the change of these two frequencies is monitored during deposition. The areal mass density of the deposited material is determined from these two resonance frequencies for the uncoated quartz crystal and for the crystal during deposition. A frequency generator provides accurate sweeps of frequency which are applied to the crystal, and the crystal response is supplied to a phase detector to identify the positions of the resonance frequencies. The acoustic impedance ratio Z of the deposited material relative to the fresh crystal is computed from the resonance frequencies for the coated and uncoated crystal, by applying the modal equations for AT-cut plano-convex quartz crystal and Lu-Lewis relation. From the frequency shifts and acoustic impedance ratio, and areal mass density can be calculated. The same crystal can be used to control the growth rate of several successive layers.
    • 沉积膜的厚度和生长速率使用压电晶体传感器如AT切平面凸晶体来监测。 在沉积之前测量基频和另一共振模式的频率,并且在沉积期间监测这两个频率的变化。 沉积材料的面积质量密度由沉积中未涂覆的石英晶体和晶体的这两个共振频率确定。 频率发生器提供施加到晶体的精确的频率扫描,并且将晶体响应提供给相位检测器以识别谐振频率的位置。 通过应用AT切割平凸石英晶体和Lu-Lewis关系的模态方程,从涂层和未涂层​​晶体的共振频率计算沉积材料相对于新鲜晶体的声阻抗比Z。 从频移和声阻抗比可以计算出面积质量密度。 可以使用相同的晶体来控制几个连续层的生长速率。
    • 6. 发明授权
    • Buffered quartz crystal
    • 缓冲石英晶体
    • US5233261A
    • 1993-08-03
    • US812685
    • 1991-12-23
    • Abdul Wajid
    • Abdul Wajid
    • H01L41/22H03H9/19
    • H01L41/29H03H9/19
    • An AT-cut quartz crystal for a quartz crystal microbalance has a buffer layer sandwiched between an adhesion layer and an electrode layer on the front or deposition side of the crystal. The buffer layer can be a zinc layer of 6000 .ANG. sandwiched between a titanium or chromium adhesion layer of 100 to 160 .ANG. and a gold, silver, or aluminum outer electrode layer of about 2000 .ANG.. The zinc layer has a relatively low bulk modulus, and absorbs stress imposed by the deposited layer. The buffer layer prolongs useful crystal life, particularly when depositing dielectric materials. The crystal should have a modest surface roughness as keying-in structure.
    • 用于石英晶体微量天平的AT切割石英晶体具有夹在晶体的正面或沉积侧上的粘附层和电极层之间的缓冲层。 缓冲层可以是夹在100至160安培的钛或铬粘合层和约2000安格姆的金,银或铝外电极层之间的6000安格姆的锌层。 锌层具有较低的体积弹性模量,并且吸收由沉积层施加的应力。 缓冲层延长了有用的晶体寿命,特别是当沉积介电材料时。 晶体应具有适度的表面粗糙度作为键入结构。