专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08497759B2 Leadless media protected fast response RTD sensor and method for making the same 失效
标题翻译：无铅介质保护快速响应RTD传感器和制作相同的方法
公开(公告)号：US08497759B2
公开(公告)日：2013-07-30
申请号：US12731427
申请日：2010-03-25
申请人： Alexander Ned , Vikram Patil , Joseph VanDeWeert , Nora Kurtz
发明人： Anthony D. Kurtz , Alexander Ned , Vikram Patil , Joseph VanDeWeert
IPC分类号： H01C3/04
CPC分类号： G01K7/183
摘要： The RTD device of the present invention is comprised of a semiconductor substrate and a substantially thin conductive metal layer disposed upon the semiconductor substrate, wherein the conductive metal has a substantially linear temperature-resistance relationship. The conductive layer is etched into a convoluted RTD pattern, which consequently increases the overall resistance and minimizes the overall mass of the RTD assembly. A contact glass cover and a conductive metal-glass frit are placed over the RTD assembly to hermetically seal the RTD. The resultant structure can be “upside-down” mounted onto a header or a flat shim so that the bottom surface of the semiconductor substrate is exposed to the external environment, thus shielding the RTD from external forces. The resultant structure is a low mass, highly conductive, leadless, and hermetically sealed RTD that accurately measures the temperature of liquids and gases and maintains fast response time in high temperatures and harsh environments.
摘要翻译：本发明的RTD器件包括半导体衬底和设置在半导体衬底上的基本上薄的导电金属层，其中导电金属具有基本上线性的耐温性关系。导电层被蚀刻成卷积的RTD图案，因此增加了整体电阻并使RTD组件的整体质量最小化。将接触玻璃盖和导电金属玻璃料放置在RTD组件上以气密地密封RTD。所得到的结构可以“倒置”安装在集管或平面垫片上，使得半导体衬底的底表面暴露于外部环境，从而屏蔽RTD免受外力的影响。所得结构是低质量，高导电性，无引线和密封的RTD，可精确测量液体和气体的温度，并在高温和恶劣环境中保持快速响应时间。

2. 发明申请

US20070254796A1 Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers 审中-公开
标题翻译：用于防止超高压压阻传感器和换能器中的灾难性接触故障的方法和装置
公开(公告)号：US20070254796A1
公开(公告)日：2007-11-01
申请号：US11412024
申请日：2006-04-26
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： C03C8/18 , C03C8/04
CPC分类号： C03C3/062 , C03C3/064 , C03C3/083 , C03C3/085 , C03C3/091 , C03C27/044 , G01L9/0042 , G01L9/0055 , G01L19/0069
摘要： A method to prevent the catastrophic failure of electrical contacts of silicon piezoresistive transducers located on a silicon wafer at temperatures above 600° C. comprising the steps of using a lead-free glass frit to surround the contacts and bonding the sensor wafer to a glass wafer employing a lead-free glass and utilizing a modified electrostatic bonding technique to join the silicon wafer to the lead-free glass wafer to form a high temperature SOI device.
摘要翻译：一种防止在高于600℃的温度下位于硅晶片上的硅压阻传感器的电触点的灾难性故障的方法，包括以下步骤：使用无铅玻璃料围绕触点并将传感器晶片接合到玻璃晶片采用无铅玻璃并利用改进的静电接合技术将硅晶片连接到无铅玻璃晶片以形成高温SOI器件。

3. 发明申请

US20070114624A1 Moisture resistant differential pressure sensors 有权
公开(公告)号：US20070114624A1
公开(公告)日：2007-05-24
申请号：US11651796
申请日：2007-01-10
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： H01L29/84
CPC分类号： G01L19/147
摘要： A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements are passivated and covered with a layer of silicon dioxide. Each element has a contact terminal associated therewith. The semiconductor wafer has an outer peripheral silicon frame surrounding the active area. The semiconductor wafer is bonded to a glass cover member via an anodic or electrostatic bond by bonding the outer peripheral frame to the periphery of the glass wafer. An inner silicon dioxide frame forms a compression bond with the glass wafer when the glass wafer is bonded to the silicon frame. This compression bond prevents deleterious fluids from entering the active area or destroying the silicon. The above described apparatus is mounted on a header such that through holes in the glass wafer are aligned with the header terminals. The header has pins which are directed from the header terminals to enable contact to be made to the unit. Both the top and bottom surfaces of the semiconductor wafer are coated with silicon dioxide which acts to protect all the elements from deleterious substances. Thus a first pressure is applied to one surface and a second pressure is applied to the other surface to enable differential operation.

4. 发明申请

US20070099392A1 Fusion bonding process and structure for fabricating silicon-on-insulator (SOI) semiconductor devices 有权
标题翻译：用于制造绝缘体上硅（SOI）半导体器件的融合键合工艺和结构
公开(公告)号：US20070099392A1
公开(公告)日：2007-05-03
申请号：US11262179
申请日：2005-10-28
申请人： Anthony Kurtz , Alexander Ned
发明人： Anthony Kurtz , Alexander Ned
IPC分类号： H01L21/76
CPC分类号： H01L21/76251
摘要： A method of fabricating a semiconductor-on-insulator device including: providing a first semiconductor wafer having an about 200 angstrom thick oxide layer thereover; etching the first semiconductor wafer to raise a pattern therein; doping the raised pattern of the first semiconductor wafer through the about 200 angstrom thick oxide layer; providing a second semiconductor wafer having an oxide thereover; and, bonding the first semiconductor wafer oxide to the second semiconductor wafer oxide at an elevated temperature.
摘要翻译：一种制造绝缘体上半导体器件的方法，包括：提供其上具有约200埃厚的氧化物层的第一半导体晶片; 蚀刻第一半导体晶片以在其中升高图案; 通过约200埃厚的氧化物层掺杂第一半导体晶片的凸起图案; 提供其上具有氧化物的第二半导体晶片; 并且在升高的温度下将第一半导体晶片氧化物接合到第二半导体晶片氧化物。

5. 发明授权

US06210989B1 Ultra thin surface mount wafer sensor structures and methods for fabricating same 有权
标题翻译：超薄表面贴装晶片传感器结构及其制造方法
公开(公告)号：US06210989B1
公开(公告)日：2001-04-03
申请号：US09398969
申请日：1999-09-17
申请人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
发明人： Anthony D. Kurtz , Alexander Ned , Scott J. Goodman
IPC分类号： H01L2720
CPC分类号： G01L9/0055 , G01L19/0084
摘要： There is disclosed a semiconductor sensor device comprising a semiconductor diaphragm member having a top surface coated with an oxide layer; P+ sensor elements fusion bonded to the oxide layer at a relatively central area of the diaphragm; P+ finger elements fusion bonded to the oxide layer extending from the sensors to an outer contact location of the diaphragm for each finger; and an external rim of P+ material fusion bonded to the oxide layer and surrounding the sensors and fingers. A first glass wafer member is electrostatically bonded at a bottom surface to the fingers and rim to hermetically seal the sensors and fingers of the diaphragm member. The first glass wafer includes a depression above the sensors and has a plurality of apertures, where each aperture is associated with a separate finger at the contact location and each aperture being smaller than the associated finger lining up with the contact location wherein each contact location can be accessed via the associated aperture in the first glass wafer member. A second glass wafer member is sealingly coupled to a top surface of the first glass wafer and has a plurality of apertures aligned with the plurality of apertures of the first glass wafer member and containing a group of hermetically sealed pins for coupling to the contact locations.
摘要翻译：公开了一种半导体传感器装置，其包括具有涂覆有氧化物层的顶表面的半导体隔膜部件; P +传感器元件在隔膜的相对中心区域处熔合到氧化物层; P +手指元件融合到从传感器延伸到每个手指的隔膜的外部接触位置的氧化物层; 并且P +材料的外缘融合到氧化物层并且围绕传感器和手指。第一玻璃晶片构件在底面处与手指和边缘静电结合，以气密地密封隔膜构件的传感器和手指。第一玻璃晶片包括在传感器上方的凹陷部，并且具有多个孔，其中每个孔与接触位置处的单独手指相关联，并且每个孔小于相关联的手指与接触位置对齐，其中每个接触位置可以通过第一玻璃晶片构件中的相关孔径进入。第二玻璃晶片构件密封地联接到第一玻璃晶片的顶表面，并且具有与第一玻璃晶片构件的多个孔对准的多个孔，并且包含一组用于联接到接触位置的密封销。

6. 发明授权

US08631707B2 Differential temperature and acceleration compensated pressure transducer 有权
标题翻译：差压和加速补偿压力传感器
公开(公告)号：US08631707B2
公开(公告)日：2014-01-21
申请号：US12751482
申请日：2010-03-31
申请人： Anthony D. Kurtz , Alexander Ned , Sorin Stefanescu , Nora Kurtz
发明人： Anthony D. Kurtz , Alexander Ned , Sorin Stefanescu , Nora Kurtz
IPC分类号： G01L9/10 , G01L15/00 , G01L7/08
CPC分类号： G01L9/0055 , G01L13/025 , G01L15/00 , G01L19/04 , Y10T29/49002
摘要： A dual diaphragm pressure transducer, or sensor, with compensation for non-pressure effects is disclosed. The pressure sensor can include two pressure transducers located on separate portions of a chip. The first pressure transducer can be a differential pressure transducer, which produces a signal proportional to one or more applied pressures and includes other non-pressure effects. The second pressure transducer can be sealed in a hermetic chamber and thus can produce a signal proportional only to non-pressure effects. The signals can be combined to produce a signal proportional to the applied pressures with no non-pressure effects. The first and second pressure transducers can be physically and/or electrically isolated to improve sealing between the two pressure transducers and prevent pressure leaks therebetween.
摘要翻译：公开了一种具有非压力效应补偿的双隔膜压力传感器或传感器。压力传感器可以包括位于芯片的分开部分上的两个压力传感器。第一压力传感器可以是差压传感器，其产生与一个或多个施加压力成比例的信号，并且包括其它非压力效应。第二压力传感器可以密封在密封室中，因此可以产生仅与非压力效应成比例的信号。信号可以组合以产生与所施加的压力成比例的信号，而没有非压力效应。第一和第二压力传感器可以物理和/或电隔离以改善两个压力传感器之间的密封并防止它们之间的压力泄漏。

7. 发明授权

US08497757B2 Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers 有权
标题翻译：用于防止超高压压阻传感器和换能器中的灾难性接触故障的方法和装置
公开(公告)号：US08497757B2
公开(公告)日：2013-07-30
申请号：US12686990
申请日：2010-01-13
申请人： Anthony D. Kurtz , Alexander Ned
发明人： Anthony D. Kurtz , Alexander Ned
IPC分类号： G01L1/22
CPC分类号： G01L1/18 , C03C27/044 , G01L1/2287 , G01L9/0042 , G01L9/0054 , G01L19/0069 , G01L19/0084 , Y10T156/10
摘要： A piezoresistive sensor device and a method for making a piezoresistive device are disclosed. The sensor device comprises a silicon wafer having piezoresistive elements and contacts in electrical communication with the elements. The sensor device further comprises a contact glass coupled to the silicon wafer and having apertures aligned with the contacts. The sensor device also comprises a non-conductive frit for mounting the contact glass to a header glass, and a conductive non-lead glass frit disposed in the apertures and in electrical communication with the contacts. The method for making a piezoresistive sensor device, comprises bonding a contact glass to a silicon wafer such that apertures in the glass line up with contacts on the wafer, and filling the apertures with a non-lead glass frit such that the frit is in electrical communication with the contacts. The use of a lead free glass frit prevents catastrophic failure of the piezoresistive sensor and associated transducer in ultra high temperature applications.
摘要翻译：公开了压阻传感器装置和制造压阻器件的方法。传感器装置包括具有压阻元件和与元件电连通的触点的硅晶片。所述传感器装置还包括接触玻璃，所述接触玻璃联接到所述硅晶片并且具有与所述触点对准的孔。传感器装置还包括用于将接触玻璃安装到集管玻璃的非导电玻璃料，以及设置在孔中并与触头电连通的导电非铅玻璃料。用于制造压阻传感器装置的方法包括将接触玻璃接合到硅晶片，使得玻璃中的孔与晶片上的触点对齐，并用非铅玻璃料填充孔，使得玻璃料处于电与联系人沟通。使用无铅玻璃料防止压敏传感器和相关传感器在超高温应用中的灾难性故障。

8. 发明申请

US20090313797A1 Mounting apparatus and method for accurately positioning and aligning a leadless semiconductor chip on an associated header 有权
标题翻译：用于在相关的头部上精确地定位和对准无引线半导体芯片的安装装置和方法
公开(公告)号：US20090313797A1
公开(公告)日：2009-12-24
申请号：US12288363
申请日：2008-10-20
申请人： Anthony D. Kurtz , Alexander Ned , Scott Goodman
发明人： Anthony D. Kurtz , Alexander Ned , Scott Goodman
IPC分类号： H01L21/00
CPC分类号： G01L19/0084 , Y10T29/41
摘要： There is disclosed a method and apparatus for mounting a leadless semiconductor chip on a header. The semiconductor chip has contacts on a surface and the chip is of a specified geometric shape. The header has a contact surface for receiving the chip with the contact surface of the header containing header contact pins, which pins have to contact the contacts on the semiconductor chip. The header has a guide pin extending from the contact surface and there is a guide plate which has an aperture adapted to be placed over the guide pin, the guide plate further has a chip accommodating aperture of the same geometric shape as the chip. The guide plate, when placed over the guide pin enables the chip to be placed in the chip accommodating aperture so that the contacts of the header pin are properly and accurately aligned with respect to the contacts on the semiconductor chip.
摘要翻译：公开了一种将无引线半导体芯片安装在集管上的方法和装置。半导体芯片在表面上具有触点，并且芯片具有指定的几何形状。集管具有用于接收芯片的接触表面，其中插头的接触表面包含插座接头引脚，该引脚必须与半导体芯片上的触点接触。集管具有从接触表面延伸的引导销，并且存在具有适于放置在引导销上方的孔的引导板，引导板还具有与芯片相同的几何形状的芯片容纳孔。引导板当放置在引导销上时，可以将芯片放置在芯片容纳孔中，使得插头引脚的触点相对于半导体芯片上的触点正确且精确地对准。

9. 发明申请

US20070068267A1 High temperature pressure sensing system 有权
标题翻译：高温压力传感系统
公开(公告)号：US20070068267A1
公开(公告)日：2007-03-29
申请号：US11234724
申请日：2005-09-23
申请人： Anthony Kurtz , Wolf Landmann , Alexander Ned
发明人： Anthony Kurtz , Wolf Landmann , Alexander Ned
IPC分类号： G01L9/06
CPC分类号： G01L9/065
摘要： A high temperature pressure sensing system (transducer) including: a pressure sensing piezoresistive sensor formed by a silicon-on-insulator (SOI) process; a SOI amplifier circuit operatively coupled to the piezoresistive sensor; a SOI gain controller circuit including a plurality of resistances that when selectively coupled to the amplifier adjust a gain of the amplifier; a plurality of off-chip contacts corresponding to the resistances, respectively, for electrically activating the corresponding resistances and using a metallization layer for the SOI sensor and SOI ASIC suitable for high temperature interconnections (bonding); wherein the piezoresistive sensor, amplifier circuit and gain control circuit are suitable for use in environments having a temperature greater than 175 degrees C. and reaching between 250° C. and 300° C., and wherein the entire transducer has a high immunity to nuclear radiation.
摘要翻译：一种高温压力感测系统（传感器），包括：由绝缘体上硅（SOI）工艺形成的压力感测压阻传感器; 可操作地耦合到压阻传感器的SOI放大器电路; 包括多个电阻的SOI增益控制器电路，当选择性地耦合到放大器时调节放大器的增益; 分别对应于电阻的多个片外触点，用于电激活相应的电阻并且使用用于SOI传感器的金属化层和适合于高温互连（接合）的SOI ASIC; 其中所述压阻传感器，放大器电路和增益控制电路适用于温度高于175摄氏度并达到250℃至300℃的环境中，并且其中整个换能器具有对核的高免疫性辐射。

10. 发明申请

US20060157840A1 High temperature interconnects for high temperature transducers 有权
标题翻译：高温互感器用于高温传感器
公开(公告)号：US20060157840A1
公开(公告)日：2006-07-20
申请号：US11039587
申请日：2005-01-20
申请人： Anthony Kurtz , Alexander Ned , Scott Goodman
发明人： Anthony Kurtz , Alexander Ned , Scott Goodman
IPC分类号： H01L23/02
CPC分类号： G01L9/0055 , G01L19/0084
摘要： A silicon wafer is fabricated utilizing two or more semiconductor wafers. The wafers are processed using conventional wafer processing techniques and the wafer contains a plurality of output terminals which essentially are platinum titanium metallization or high temperature contacts. A glass cover member is provided which has a plurality of through holes. Each through hole is associated with a contact on the semiconductor wafer. A high temperature lead is directed through the through hole or aperture in the glass cover and is bonded directly to the appropriate contact. The lead is of a sufficient length to extend into a second non through aperture in the contact glass. The non through aperture is located on the side of the contact glass not in contact with the silicon sensor. The non through aperture is then filled with a high temperature conductive glass frit. A plurality of slots are provided. Each slot is associated with a through and a non through aperture to accommodate the wire as directed from the through aperture through the slot and into the non through aperture. The slots provide means of retaining or securing the wire as it passes from the through aperture to the non through aperture. The non through apertures as indicated are filled with a high temperature conductive glass frit which glass frit accommodates suitable pins.
摘要翻译：利用两个或更多个半导体晶片制造硅晶片。使用常规晶片处理技术处理晶片，并且晶片包含基本上是铂钛金属化或高温接触的多个输出端子。提供了一种具有多个通孔的玻璃盖构件。每个通孔与半导体晶片上的接触相关联。高温引线通过玻璃盖中的通孔或孔直接接合到适当的接触处。引线具有足够的长度以延伸到接触玻璃中的第二非通孔中。非通孔位于接触玻璃的不与硅传感器接触的一侧。然后用高温导电玻璃料填充非通孔。提供多个槽。每个狭槽与通孔和非通孔相关联，以便从通孔穿过狭槽引导并且进入非通孔。这些槽提供了当线从通孔到非通孔时保持或固定的装置。如所示的非通孔填充有玻璃料容纳适当针脚的高温导电玻璃料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式