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1. 发明授权

US07032298B2 Apparatus for replacing defective PCB from PCB panel 失效
标题翻译：用于从PCB面板更换有缺陷的PCB的设备
公开(公告)号：US07032298B2
公开(公告)日：2006-04-25
申请号：US11071134
申请日：2005-03-03
申请人： Tae-Myung Sin
发明人： Tae-Myung Sin
IPC分类号： B23P19/00
CPC分类号： H05K3/0097 , H05K1/0269 , H05K3/0052 , H05K3/225 , H05K2201/09918 , H05K2203/0165 , H05K2203/166 , H05K2203/167 , Y10T29/49124 , Y10T29/49126 , Y10T29/49128 , Y10T29/49131 , Y10T29/49133 , Y10T29/49135 , Y10T29/4973 , Y10T29/49815 , Y10T29/53043 , Y10T29/53052 , Y10T29/53174 , Y10T29/53261 , Y10T29/53274
摘要： The present invention relates to an apparatus for replacing a defective PCB unit formed on a PCB panel with a nondefective PCB unit, in which the location of the nondefective PCB unit disposed on a location correcting table is corrected by a location correcting driver via the location correcting data read by a vision camera, realizing a precise alignment in replacing the defective PCB unit without using a precise mechanical jig.
摘要翻译：本发明涉及一种用于利用无缺陷的PCB单元来更换形成在PCB面板上的有缺陷的PCB单元的设备，其中设置在位置校正台上的无缺陷PCB单元的位置通过位置校正驱动器经由位置校正来校正由视觉摄像机读取的数据，在不使用精确的机械夹具的情况下实现更换有缺陷的PCB单元的精确对准。

2. 发明授权

US08857351B2 Modular support assembly with fortifying flange 有权
标题翻译：具有强化法兰的模块化支撑组件
公开(公告)号：US08857351B2
公开(公告)日：2014-10-14
申请号：US11211510
申请日：2005-08-25
申请人： Ronald A. Zimmer , Alan W. Knapper
发明人： Ronald A. Zimmer , Alan W. Knapper
IPC分类号： A47B13/00 , A47B87/02 , A47B47/04
CPC分类号： A47B87/0215 , A47B47/04 , A47B87/0253
摘要： A modular support assembly generally comprising vertical support members and a horizontal support member, such as a shelf, for supporting objects. The horizontal support member includes a main panel portion and flange portions connected along the sides of the panel for fortifying same. The vertical support members have cavities on their inner surfaces, and the horizontal support members have protrusions at their ends corresponding to the cavities. In some embodiments, the flanges are hingedly connected to the panel such that they pivot between a flat position and a supporting position perpendicular to the panel. In certain embodiments, the protrusions are integrally formed with extend out from the flanges. In some embodiments, the assembly is blow-molded article.
摘要翻译：通常包括用于支撑物体的垂直支撑构件和水平支撑构件（例如搁架）的模块化支撑组件。水平支撑构件包括主面板部分和沿着面板的侧面连接的凸缘部分，用于对其进行加强。垂直支撑构件在其内表面上具有空腔，并且水平支撑构件在其端部处具有对应于空腔的突起。在一些实施例中，凸缘铰接地连接到面板，使得它们在平坦位置和垂直于面板的支撑位置之间枢转。在某些实施例中，突出部一体地形成，从凸缘延伸出来。在一些实施例中，组件是吹塑制品。

3. 外观设计

USD622742S1 Needle holder 有权
标题翻译：针架
公开(公告)号：USD622742S1
公开(公告)日：2010-08-31
申请号：US29333825
申请日：2009-03-16
申请人： Siegfried Riek , Thomas Gaiselmann , Karl-Heinz Bachmann , Klaus Marzusch
设计人： Siegfried Riek , Thomas Gaiselmann , Karl-Heinz Bachmann , Klaus Marzusch

4. 发明授权

US07711523B2 System for remote monitoring and control of an instrument 有权
标题翻译：用于远程监测和控制仪器的系统
公开(公告)号：US07711523B2
公开(公告)日：2010-05-04
申请号：US11932380
申请日：2007-10-31
申请人： Richard Linley , John A. Olbert
发明人： Richard Linley , John A. Olbert
IPC分类号： G06F17/00 , G06F19/00
CPC分类号： G06F17/3089 , G06F19/00 , G06F19/3418
摘要： The invention relates to a web-based instrument and data management system and method including software executing on an instrument controller computer system that receives a web file from a web browsing software executing on a remote computer. The web-based interface also extracts a user identifier and a requested action, determines with the user is authorized for the requested action and performs the action is the user is authorized. If not the web-based interface generates and transmits a web file indicating that the user is not authorized for the requested action.
摘要翻译：本发明涉及一种基于网络的仪器和数据管理系统和方法，包括在仪器控制器计算机系统上执行的软件，所述仪器控制器计算机系统从在远程计算机上执行的web浏览软件接收web文件。基于Web的界面还提取用户标识符和请求的动作，用户确定被授权为被请求的动作，并且执行用户被授权的动作。如果基于Web的接口不是生成并发送指示用户未被授权请求的动作的Web文件。

5. 发明授权

US07473316B1 Method of growing nitrogenous semiconductor crystal materials 失效
标题翻译：生长氮半导体晶体材料的方法
公开(公告)号：US07473316B1
公开(公告)日：2009-01-06
申请号：US09624252
申请日：2000-07-24
申请人： Bernd Schottker , Michael Heuken , Holger Jürgensen , Gerd Strauch , Bernd Wachtendorf
发明人： Bernd Schottker , Michael Heuken , Holger Jürgensen , Gerd Strauch , Bernd Wachtendorf
IPC分类号： C30B25/16
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406
摘要： What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form AXBYCZNVMW wherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.
摘要翻译：这里描述的是以AXBYCZNVMW形式的氮半导体晶体材料的初始生长的方法，其中A，B，C是II或III族的元素，N是氮，M表示V或VI族元素， X，Y，Z，W表示使用沉积在蓝宝石，SiC或Si上的化合物的每种元素的摩尔分数，使用允许在初始生长期间生长参数的连续变化的各种斜坡函数。

6. 发明授权

US07033921B2 Method and device for depositing crystalline layers on crystalline substrates 失效
标题翻译：在结晶基底上沉积结晶层的方法和装置
公开(公告)号：US07033921B2
公开(公告)日：2006-04-25
申请号：US10872920
申请日：2004-06-21
申请人： Holger Jurgensen
发明人： Holger Jurgensen
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C30B25/02 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406
摘要： The invention relates to a method and device for depositing several crystalline semiconductor layers on at least one semiconductor crystalline substrate. According to said method, gaseous parent substances are introduced into a process chamber of a reactor by means of a gas inlet organ, said substances accumulating, optionally after a chemical gas phase and/or surface reaction, on the surface of a semiconductor substrate that is placed on a substrate holder in the process chamber, thus forming the semiconductor layer. Said semiconductor layer and the semiconductor substrate form a crystal consisting of either one or several elements from main group V, elements from main groups III and V, or elements from main groups II and VI. In a first process step for depositing a first semiconductor layer, a first process gas consisting of one or several first parent substances is introduced into the process chamber, the decomposition products of said gas forming the crystal of a first semiconductor layer and small quantities of a second parent substance can be introduced into the process chamber in order to dope the first semiconductor layer. The invention is characterized in that in a second process step, prior to or after the first process step, a second process gas, which contains the second parent substance and optionally additional gases, is introduced into said process chamber in order to deposit a second semiconductor layer, the decomposition products of said gas forming a second semiconductor layer, having a crystal that differs from that of the first semiconductor layer, whereby small quantities of a first parent substance can be introduced into the process chamber in order to dope the second semiconductor layer.
摘要翻译：本发明涉及一种用于在至少一个半导体晶体衬底上沉积多个晶体半导体层的方法和装置。根据所述方法，气态母体物质通过气体入口器官引入反应器的处理室中，所述物质任选地在化学气相和/或表面反应之后积聚在半导体衬底的表面上放置在处理室中的衬底保持器上，从而形成半导体层。所述半导体层和半导体衬底形成由主族V中的一种或几种元素，主要组III和V的元素或主要基团II和VI的元素组成的晶体。在用于沉积第一半导体层的第一工艺步骤中，将由一种或几种第一母体物质组成的第一工艺气体引入处理室中，形成第一半导体层的晶体的所述气体的分解产物和少量的可以将第二母体物质引入处理室以便掺杂第一半导体层。本发明的特征在于，在第二工艺步骤中，在第一工艺步骤之前或之后，将含有第二母体物质和任选的附加气体的第二工艺气体引入所述处理室中，以沉积第二半导体层，形成第二半导体层的所述气体的分解产物具有不同于第一半导体层的晶体，由此可以将少量的第一母体物质引入处理室以便掺杂第二半导体层。

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