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1. 发明授权

US4872049A Encapsulated low-noise ultra-high frequency semiconductor device 失效
标题翻译：封装的低噪声超高频半导体器件
公开(公告)号：US4872049A
公开(公告)日：1989-10-03
申请号：US133421
申请日：1987-12-15
申请人： Henri Derewonko , Didier Adam , Daniel Delagebeaudeuf , Patrick Resneau
发明人： Henri Derewonko , Didier Adam , Daniel Delagebeaudeuf , Patrick Resneau
IPC分类号： H01L23/66
CPC分类号： H01L24/48 , H01L23/66 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/45014 , H01L2224/451 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48257 , H01L2224/4903 , H01L2224/49051 , H01L2224/4911 , H01L2224/49171 , H01L2224/49175 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/01057 , H01L2924/01058 , H01L2924/014 , H01L2924/10329 , H01L2924/13063 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111
摘要： An ultra-high frequency transistor is mounted in a hermetically sealed package in order to be made usable and in order to improve its performance characteristics to the optimum level. To diminish the noise factor of an ultra-high frequency transistor, the geometrical dimensions of the gate must be reduced. But the transistor changes its impedance and maximum frequency and can no longer be used in a package or at the external impedance of the circuit. It has to be pre-matched by having a choke mounted between its gate, its drain and the corresponding external connections. Each choke consists of a long metallic wire, forming a hairpin, soldered inside the package between the gate metallization and the internal end of its external connection or between the drain metallization and the internal end of its external connection. The invention can be applied to low-noise ultra-high frequency amplifiers.
摘要翻译：超高频晶体管安装在气密密封的封装中，以便使其可用，并且将其性能特性提高到最佳水平。为了降低超高频晶体管的噪声系数，必须减小栅极的几何尺寸。但是晶体管改变其阻抗和最大频率，并且不能再用于封装或电路的外部阻抗。必须通过在其门，排水口和相应的外部连接之间安装扼流圈来预先匹配。每个扼流圈由长金属线组成，形成发夹，焊接在封装之间的栅极金属化和其外部连接的内部端之间或漏极金属化和其外部连接的内部端之间。本发明可以应用于低噪声超高频放大器。

2. 发明授权

US4868526A Frequency-doubling oscillator, tuned by varactors 失效
标题翻译：倍频振荡器，由变容二极管调谐
公开(公告)号：US4868526A
公开(公告)日：1989-09-19
申请号：US285630
申请日：1988-12-16
申请人： Marc Camiade , Alain Bert , Pierre Savary
发明人： Marc Camiade , Alain Bert , Pierre Savary
IPC分类号： H03B5/18
CPC分类号： H03B5/1852 , H03B2200/0028 , H03B2200/004 , H03B2200/007
摘要： An ultrahigh-frequency oscillator. To double the frequency of an oscillator having a single field-effect transistor (10), whose fundamental frequency is adjusted by an impedance of gate (13) and an impedance of source (15), a filter (16+17) is mounted between the drain of transistor (10) and the ground. This filter, formed by a self-induction coil (16) in series with a varactor (17) is adjusted to the fundamental frequency: it assures the rejection, and favors the generation of the second harmonic, at double frequency. Application to ultrahigh-frequency sources.
摘要翻译：超高频振荡器。为了使具有单个场效应晶体管（10）的振荡器的频率加倍，其基频通过栅极（13）的阻抗和源极（15）的阻抗来调节，滤波器（16 + 17）安装在晶体管（10）的漏极和地。由与变容二极管（17）串联的自感感应线圈（16）形成的该滤波器被调整为基频：它以双倍频率确保抑制并有利于产生二次谐波。应用于超高频源。

3. 发明授权

US4811079A Method for the collective chemical cutting out of semiconductor devices, and a device cut out by this method 失效
标题翻译：用于半导体器件的集体化学切割的方法，以及通过该方法切割的装置
公开(公告)号：US4811079A
公开(公告)日：1989-03-07
申请号：US139029
申请日：1987-12-29
申请人： Nathalie M. Turina , George Lleti
发明人： Nathalie M. Turina , George Lleti
IPC分类号： H01L21/78 , H01L29/06 , C03C15/00 , C23F1/02 , H01L21/306
CPC分类号： H01L21/78
摘要： The invention provides a method for cutting out very small sized semiconductor devices, mounted on a gold base, including the formation of depth indicators etched through the active layer, on a manufacturing wafer, and penetrating into the substrate, said indicators being metallized then, after masking, the gold bases are deposited. A mechanical metal support makes it possible to thin down the substrate and to etch the mesa diodes on their gold bases, the metal of the mechanical support then being etched by an acid solution which cuts out the diodes.
摘要翻译：本发明提供了一种用于切割安装在金底座上的非常小尺寸的半导体器件的方法，包括形成通过有源层蚀刻的深度指示器，在制造晶片上，并穿透到衬底中，然后在掩蔽，金底物沉积。机械金属支架使得可以使衬底变薄并蚀刻其金底座上的台面二极管，然后机械支撑件的金属被切掉二极管的酸溶液蚀刻。

4. 发明授权

US4808949A Integrated hyperfrequency circulator 失效
标题翻译：集成超频环行器
公开(公告)号：US4808949A
公开(公告)日：1989-02-28
申请号：US153915
申请日：1988-02-09
申请人： Gerard Forterre
发明人： Gerard Forterre
IPC分类号： H01P1/39
CPC分类号： H01P1/39
摘要： A hyperfrequency circulator is provided in which the gyrator is integrated in the wave-guide, comprising a wave-guide whose two main faces are pierced with two holes, aligned with the center of symmetry of the junction. Through these holes a one-piece gyrator passes formed by at least one magnet, a pole piece, a solid dielectric resonator and a second pole piece. The gyrator is cylindrical in shape, and the pole pieces each have a flange of the same diameter as the holes in the wave-guide, the cooling plates immobilizing the one piece gyrator in the wave-guide.
摘要翻译：提供了一种超频循环器，其中旋转器集成在波导中，包括波导，其两个主表面被刺穿有与孔的对称中心对准的两个孔。通过这些孔，由至少一个磁体，极片，固体介质谐振器和第二极片形成的一体式旋转器通路。回转器的形状为圆柱形，极片各自具有与波导管中的孔直径相同的凸缘，冷却板将一体旋转器固定在波导管中。

5. 发明授权

US4996588A Device for interconnection and protection of a bare microwave component chip 失效
标题翻译：用于互连和保护裸露微波部件芯片的装置
公开(公告)号：US4996588A
公开(公告)日：1991-02-26
申请号：US326646
申请日：1989-03-21
申请人： Serge Malbe , Evelyne Da Silva , Alain Fouche
发明人： Serge Malbe , Evelyne Da Silva , Alain Fouche
IPC分类号： H01L23/12 , H01L21/338 , H01L23/498 , H01L23/66 , H01L25/04 , H01L25/18 , H01L29/812
CPC分类号： H01L23/49827 , H01L23/66 , H01L2224/45014 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L24/45 , H01L24/48 , H01L2924/01014 , H01L2924/01079 , H01L2924/12033 , H01L2924/12043 , H01L2924/14 , H01L2924/1423 , H01L2924/16152 , H01L2924/19041 , H01L2924/19105 , H01L2924/3011
摘要： In order to interconnect an unprotected bare chip of MMIC (microwave monolithic integrated circuit), a ceramic substrate carries a double-face circuit. A network of microstrip lines which radiate from the center to the periphery is disposed on the first face of said double-face circuit. The bare MMIC chip and its microwave environment is fixed on the second face which is metallized as a ground plane. The microwave circuit is interconnected with the network of microstrips by means of plugged metallized holes. A sole-piece provided with a housing for the MMIC is fixed on the ground plane. The first face can carry self-protected components.
摘要翻译：为了互连MMIC的无保护裸芯片（微波单片集成电路），陶瓷衬底承载双面电路。从中心辐射到周边的微带线的网络设置在所述双面电路的第一面上。裸MMIC芯片及其微波环境固定在作为接地层进行金属化的第二面上。微波电路通过堵塞的金属化孔与微带网络互连。设置有MMIC的壳体的底板固定在地平面上。第一面可以携带自保护部件。

6. 发明授权

US4954827A Analog digital cascade converter 失效
标题翻译：模拟数字级联转换器
公开(公告)号：US4954827A
公开(公告)日：1990-09-04
申请号：US269011
申请日：1988-11-09
申请人： Pham N. Tung
发明人： Pham N. Tung
IPC分类号： H03M1/00
CPC分类号： H03M1/42
摘要： In an analog-digital converter working at microwave frequencies, the input signal is addressed in parallel to bit levels which are in cascade with one another. Each bit level has a transducer which converts the voltage into a current, and compares this current with a calibrated source. The resultant current is addressed to a logic circuit, the output of which delivers a bit. An intermediate output of the logic circuit constitutes a control signal which regulates the currents of the analog comparators of the less significant bit levels. The calibrated currents are in geometrical progression.
摘要翻译：在微波频率工作的模拟数字转换器中，输入信号与彼此级联的位电平并联地寻址。每个位电平都具有将电压转换成电流的换能器，并将该电流与校准源进行比较。所得到的电流被寻址到一个逻辑电路，其输出端有一个位。逻辑电路的中间输出构成控制信号，该控制信号调节模拟比较器的较低有效位电平的电流。校准电流处于几何级数。

7. 发明授权

US4977434A Field-effect semiconductor device comprising an ancillary electrode 失效
标题翻译：场效应半导体器件包括辅助电极
公开(公告)号：US4977434A
公开(公告)日：1990-12-11
申请号：US225165
申请日：1988-07-28
申请人： Daniel Delagebeaudeuf , Henri Derewonko , Jean J. Godart , Patrick Resneau , Pierre Gibeau
发明人： Daniel Delagebeaudeuf , Henri Derewonko , Jean J. Godart , Patrick Resneau , Pierre Gibeau
IPC分类号： H01L21/338 , H01L29/08 , H01L29/417 , H01L29/78 , H01L29/80 , H01L29/812
CPC分类号： H01L29/0843 , H01L29/7831 , H01L29/8124
摘要： A field-effect transistor comprises an ancillary electrode in addition to the source, gate and drain electrodes. In this device, a semiconducting body bears source, gate and drain metallizations which define a main transistor. The metallization of the drain is separated into two parts which are separated by a channel on which is placed a second gate metallization defining a secondary transistor. The two parts of the drain are coupled by this secondary transistor, the channel of which is separated from the main channel. The secondary transistor can be used to control the gain of the main transistor or to modulate its amplitude signal or to mix two frequencies addressed on the two gates.
摘要翻译：场效应晶体管除了源极，栅极和漏极之外还包括辅助电极。在该器件中，半导体本体具有限定主晶体管的源极，栅极和漏极金属化物。漏极的金属化被分成两部分，它们被沟道分隔开，在其上放置有限定二级晶体管的第二栅极金属化。漏极的两个部分由该次级晶体管耦合，该二次晶体管的沟道与主通道分离。次级晶体管可用于控制主晶体管的增益或调制其幅度信号或混合在两个门上寻址的两个频率。

8. 发明授权

US4974038A Microwave transistor with double heterojunction 失效
标题翻译：具有双异质结的微波晶体管
公开(公告)号：US4974038A
公开(公告)日：1990-11-27
申请号：US228167
申请日：1988-08-04
申请人： Daniel Delagebeaudeuf , Pierre Gibeau , Francoise Rambier , Jean J. Godard
发明人： Daniel Delagebeaudeuf , Pierre Gibeau , Francoise Rambier , Jean J. Godard
IPC分类号： H01L27/06 , H01L29/205 , H01L29/778
CPC分类号： H01L29/7783 , H01L27/0605 , H01L29/205
摘要： A microwave transistor made with group III-V materials, such as GaAs and AlGaAs, is disclosed. This transistor essentially comprises a double heterojunction formed by a first layer of material with a big forbidden gap, n doped for example, a second non-doped layer with a narrow forbidden gap and a third p doped layer with a wide forbidden gap. Under the effect of the electrical field, there may be formed, simultaneously or not simultaneously, in the second layer, a two-dimensional electron gas at the interface with the first layer and a two-dimensional hole gas at the interface with the third layer. By bringing the thickness of the layers into play, the characteristics of the n and p channels can be made symmetrical.
摘要翻译：公开了由III-V族材料制成的微波晶体管，例如GaAs和AlGaAs。该晶体管基本上包括由具有大的禁止间隙的第一材料层形成的双异质结，例如n掺杂，具有窄禁止间隙的第二非掺杂层和具有宽禁止间隙的第三p掺杂层。在电场的作用下，可能在第二层中同时形成或不同时形成与第一层界面的二维电子气和与第三层界面的二维空穴气体。通过使层的厚度发挥作用，n和p通道的特性可以对称。

9. 发明授权

US4847571A Microwave oscillator integrated in a waveguide 失效
标题翻译：集成在波导中的微波振荡器
公开(公告)号：US4847571A
公开(公告)日：1989-07-11
申请号：US169460
申请日：1988-03-17
申请人： Jean Stevance , Edmond Klein , Georges Lleti
发明人： Jean Stevance , Edmond Klein , Georges Lleti
IPC分类号： H03B9/14 , H03C3/22
CPC分类号： H03B9/141 , H03B2009/126 , H03B2200/0016 , H03B2200/0028 , H03B2200/004 , H03B9/146 , H03C3/22
摘要： A negative-resistance diode oscillator tuned by a varactor as applicable to frequency-modulated transmitters or to receiver oscillators operating within the 56-100 GHz frequency band is integrated in a waveguide. The diode is encapsulated in a capped package and mounted on a ground-connected base. A coupling capacitor is fixed on the metallic cap of the package. A varactor having beam-lead connections is mounted as a bridge between the capacitor and a ground-connected metallic stud. The bias voltages are brought in the plane of the waveguide by means of two wires and two capacitors housed within orifices formed through the waveguide walls.
摘要翻译：由变容二极管调谐的负电阻二极管振荡器集成在波导中，该负电阻二极管振荡器适用于频率调制发射机或在56-100 GHz频带内工作的接收机振荡器。二极管封装在封装封装中，并安装在接地连接的基座上。耦合电容器固定在封装的金属盖上。具有光束引线连接的变容二极管作为电容器和接地连接的金属螺柱之间的桥梁安装。偏置电压通过两根导线和两个电容器放置在波导的平面内，这两个电容器容纳在通过波导壁形成的孔内。

10. 发明授权

US4808919A Adjustable device for measuring the characteristics of a microwave component 失效
标题翻译：用于测量微波部件特性的可调节装置
公开(公告)号：US4808919A
公开(公告)日：1989-02-28
申请号：US135232
申请日：1987-12-21
申请人： Bitoune Sylviane , Francois Grossier , Maurice LeCreff , Gerard Ralala , Dominique Geffroy
发明人： Bitoune Sylviane , Francois Grossier , Maurice LeCreff , Gerard Ralala , Dominique Geffroy
IPC分类号： G01R1/24 , G01R31/28 , H01P1/00 , G01R31/02
CPC分类号： H01P1/00 , G01R1/24 , G01R31/2822
摘要： A device fixed on a measuring instrument provides access to the terminals of a microwave component in order to measure scattering, noise or output power parameters. In order to minimize the length of connections between the access lines of the device and the input and output terminals of the component to be measured, two access blocks which carry the access lines are positionally adjustable with respect to the component to be measured in such a manner as to permit two degrees of freedom in relative-spacing displacement and in lateral translational displacement. Irrespective of the type of component to be measured (chip, package, or hybrid circuit), the component is carried by an insert block placed between the two access blocks and having dimensions equal to those of the component.
摘要翻译：固定在测量仪器上的装置提供对微波部件的端子的访问，以便测量散射，噪声或输出功率参数。为了最小化设备的接入线路和被测量部件的输入和输出端子之间的连接长度，携带接入线路的两个接入块在相对于被测量部件的位置可调节方式允许相对间隔位移和横向平移位移的两个自由度。不考虑要测量的部件的类型（芯片，封装或混合电路），组件由放置在两个访问块之间并具有与组件的尺寸相同的尺寸的插入块承载。

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