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    • 1. 发明授权
    • Electroplating methods and chemistries for deposition of copper-indium-gallium containing thin films
    • 用于沉积含铜铟镓薄膜的电镀方法和化学品
    • US08425753B2
    • 2013-04-23
    • US12642702
    • 2009-12-18
    • Serdar AksuMustafa Pinarbasi
    • Serdar AksuMustafa Pinarbasi
    • C25D5/10C25D5/50C25D7/12C25D3/56
    • C25D3/58C25D3/38C25D3/54C25D5/10
    • The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.
    • 本发明提供一种形成太阳能电池吸收层的方法和前体结构。 该方法包括电沉积包括至少包括铜的第一膜的膜堆叠的第一层,包含铟的第二膜和包含镓的第三膜,其中第一层包括第一量的铜,将第二层电沉积到第一层上 所述第二层包括第二铜铟镓镓三元合金膜,铜铟二元合金膜,铜镓二元合金膜和铜 - 硒二元合金膜中的至少一种,其中所述第二层 包括第二量的铜,其高于第一量的铜,并且将第三层电沉积到第二层上,第三层包括硒; 并使前体叠层反应在基底上形成吸收层。