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1. 发明授权

US09735030B2 Polishing compositions and methods for polishing cobalt films 有权
公开(公告)号：US09735030B2
公开(公告)日：2017-08-15
申请号：US14478508
申请日：2014-09-05
申请人： Fujifilm Planar Solutions, LLC
发明人： Luling Wang , Abhudaya Mishra , Deepak Mahulikar , Richard Wen
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/321 , C09G1/02
CPC分类号： H01L21/3212 , C09G1/02
摘要： The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)

2. 发明授权

US08974677B2 Fluid processing 有权
标题翻译：流体加工
公开(公告)号：US08974677B2
公开(公告)日：2015-03-10
申请号：US12850915
申请日：2010-08-05
申请人： Saeed H. Mohseni , Deepak Mahulikar
发明人： Saeed H. Mohseni , Deepak Mahulikar
IPC分类号： C02F1/00 , B01D37/00 , B01D29/56 , B01D35/143 , B01D29/00
CPC分类号： B01D35/143 , B01D29/56 , B01D29/96 , B01D2201/265
摘要： Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.
摘要翻译：公开了流体处理装置和系统。在一些实施例中，流体处理设备包括可移动的外壳，基本上设置在可移动外壳内的多个过滤器外壳以及设置在外壳内的支架。过滤器壳体彼此流体连通。每个过滤器壳体限定细长的路径并且构造成沿着细长流动路径支撑相应的过滤器以过滤基本连续的流体流。支架支撑每个过滤器壳体，使得每个过滤器壳体的细长流动路径基本上平行于垂直轴线，其中每个过滤器壳体相对于支架独立地可旋转。

3. 发明授权

US08961815B2 Composition for advanced node front-and back-end of line chemical mechanical polishing 有权
标题翻译：用于线性化学机械抛光的高级节点前端和后端的组成
公开(公告)号：US08961815B2
公开(公告)日：2015-02-24
申请号：US12828766
申请日：2010-07-01
申请人： Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
发明人： Bin Hu , Abhiskek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
IPC分类号： C09K13/04 , C09K3/14 , C09G1/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L29/66
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/0475 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76819 , H01L29/66545
摘要： The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
摘要翻译：本公开涉及一种高度可稀释的化学机械抛光浓缩物，其包含研磨剂，酸，稳定剂和水，其使用点pH为2.2-3.5，用于平坦化电流和下一代半导体集成电路FEOL / BEOL 底物。

4. 发明申请

US20120055865A1 CLEANING METHOD AND SYSTEM 审中-公开
标题翻译：清洁方法和系统
公开(公告)号：US20120055865A1
公开(公告)日：2012-03-08
申请号：US13159915
申请日：2011-06-14
申请人： Saeed H. Mohseni , Deepak Mahulikar , Elizabeth Gramm
发明人： Saeed H. Mohseni , Deepak Mahulikar , Elizabeth Gramm
IPC分类号： B01D29/00 , B08B3/12 , B08B3/00 , C09K13/00 , C11D17/00 , C09K13/04 , C09K13/02 , B08B7/04 , B08B9/00
CPC分类号： B08B3/08 , B01D41/04 , B08B3/14 , C11D3/43 , C11D7/50
摘要： A method for removing particles or deposits from a surface having particles or deposits thereon. The method involves contacting a surface with a chemical composition sufficient to selectively dissolve and remove at least a portion of the particles or deposits from the surface. The chemical composition is compatible with the surface. This disclosure also relates to a system of specially designed equipment for removing particles or deposits from a surface having particles or deposits thereon. The disclosure is useful, for example, in cleaning porous surfaces, media for cartridge, pleated and membrane surfaces, and internal walls of tanks or filter housings.
摘要翻译：从其上具有颗粒或沉积物的表面去除颗粒或沉积物的方法。该方法包括将表面与足以选择性地溶解并从表面去除至少一部分颗粒或沉积物的化学组合物接触。化学成分与表面相容。本公开还涉及一种用于从其上具有颗粒或沉积物的表面去除颗粒或沉积物的专门设计的设备的系统。本公开可用于例如清洁多孔表面，用于筒的介质，褶皱和膜表面以及罐或过滤器壳体的内壁。

5. 发明申请

US20060124593A1 Colloidal silica based chemical mechanical polishing slurry 审中-公开
标题翻译：胶体二氧化硅基化学机械抛光浆料
公开(公告)号：US20060124593A1
公开(公告)日：2006-06-15
申请号：US11141162
申请日：2005-05-31
申请人： Gert Moyaerts , Ken Delbridge , Nichole Koontz , Saeed Mohseni , Gerome Sayles , Deepak Mahulikar
发明人： Gert Moyaerts , Ken Delbridge , Nichole Koontz , Saeed Mohseni , Gerome Sayles , Deepak Mahulikar
IPC分类号： C09K3/14 , C09G1/02 , C09K13/00 , H01L21/461 , B44C1/22 , H01L21/302 , C09C1/68 , C23F1/00 , B24D3/02
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C09K3/1472 , C23F3/04 , H01L21/30625
摘要： A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
摘要翻译：一种用于化学机械抛光基底表面的组合物，其具有多个超高纯度溶胶凝胶加工的用于具有碱金属Li，Na，K，Rb，Cs，Fr及其组合的化学机械抛光的胶体二氧化硅颗粒，其总计碱浓度为约300ppb以下，条件是Na（如果存在）的浓度小于200ppb; 并提供用于悬浮颗粒的介质。此外，提供了化学机械抛光的方法，其包括使基底和根据本发明的组合物接触的步骤。接触在足以使基材平坦化的温度下进行一段时间。

6. 发明授权

US08742130B2 Hydrate forms of 1,2,4-triazole, processes for manufacture thereof, and compositions thereof 有权
标题翻译： 1,2,4-三唑的水合物形式，其制备方法及其组合物
公开(公告)号：US08742130B2
公开(公告)日：2014-06-03
申请号：US13666257
申请日：2012-11-01
申请人： Fujifilm Planar Solutions, LLC
发明人： Deepak Mahulikar , Luling Wang
IPC分类号： C07D249/08
CPC分类号： C07D249/08
摘要： The present invention provides new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. The present invention also discloses processes for manufacturing new hydrate forms of triazole, triazole alkaline salt, and alkali-doped 1,2,4-triazole. The present invention also relates to compositions for different applications of new hydrate forms of triazole, triazole alkaline salt, and alkali doped 1,2,4-triazole. In addition, the present invention provides co-crystal form of triazole with acid, and methods of preparing thereof.
摘要翻译：本发明提供三唑，三唑碱性盐和碱掺杂的1,2,4-三唑的新水合物形式。本发明还公开了制备三唑，三唑碱性盐和碱掺杂的1,2,4-三唑的新水合物形式的方法。本发明还涉及三氮唑，三唑碱性盐和碱掺杂的1,2,4-三唑的新水合物形式的不同应用的组合物。此外，本发明提供了三唑与酸的共晶形式及其制备方法。

7. 发明授权

US08211193B2 Ultrapure colloidal silica for use in chemical mechanical polishing applications 有权
标题翻译：超纯胶体二氧化硅用于化学机械抛光应用
公开(公告)号：US08211193B2
公开(公告)日：2012-07-03
申请号：US11526132
申请日：2006-09-22
申请人： Deepak Mahulikar , Yuhu Wang , Ken A. Delbridge , Gert R. M. Moyaerts , Saeed H. Mohseni , Nichole R. Koontz , Bin Hu , Liqing Wen
发明人： Deepak Mahulikar , Yuhu Wang , Ken A. Delbridge , Gert R. M. Moyaerts , Saeed H. Mohseni , Nichole R. Koontz , Bin Hu , Liqing Wen
IPC分类号： B24D3/02 , C09C1/68 , C09K3/14 , C09K13/00 , C09K13/02 , B24B1/00 , C01B33/12 , C03C15/00 , C03C25/68
CPC分类号： C23F3/04 , C01B33/1435 , C01B33/1485 , C01P2004/62 , C01P2004/64 , C01P2006/80 , C09G1/02 , C09K3/1463 , C09K3/1472 , H01L21/31053 , H01L21/3212
摘要： A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0.5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.
摘要翻译：一种对基材表面进行化学机械抛光的方法，包括以下步骤：使除了钾和钠之外的每种微量金属杂质含有少于200ppb的多种胶体二氧化硅颗粒的组合物接触，其含量小于2ppm 残余醇，其中不包括钾和钠的痕量金属的累积浓度在约0.5至约5ppm的范围内; 和用于悬浮颗粒的介质; 其中所述组合物是超纯胶体二氧化硅分散体; 并且其中所述接触在足以平坦化基底的温度和时间段内进行。

8. 发明授权

US08192644B2 Highly dilutable polishing concentrates and slurries 有权
标题翻译：高度可稀释的抛光浓缩液和浆液
公开(公告)号：US08192644B2
公开(公告)日：2012-06-05
申请号：US12580868
申请日：2009-10-16
申请人： Hyungjun Kim , Richard Wen , Bin Hu , Minae Tanaka , Deepak Mahulikar
发明人： Hyungjun Kim , Richard Wen , Bin Hu , Minae Tanaka , Deepak Mahulikar
IPC分类号： C09K13/00
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
摘要翻译：本公开提供了用于化学机械抛光浆料的浓缩物，以及将该浓缩物稀释到使用点浆料的方法。浓缩物包括研磨剂，络合剂和缓蚀剂，浓缩物用水和氧化剂稀释。这些组分的存在量使得浓缩物可以以非常高的稀释比稀释，而不影响抛光性能。

9. 发明申请

US20120003901A1 COMPOSITION FOR ADVANCED NODE FRONT-AND BACK-END OF LINE CHEMICAL MECHANICAL POLISHING 有权
标题翻译：线性化学机械抛光的前置和后端的组合物
公开(公告)号：US20120003901A1
公开(公告)日：2012-01-05
申请号：US12828766
申请日：2010-07-01
申请人： Bin Hu , Abhishek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
发明人： Bin Hu , Abhishek Singh , Gert Moyaerts , Deepak Mahulikar , Richard Wen
IPC分类号： B24B1/00 , C09K13/04 , C09K13/00
CPC分类号： H01L21/30625 , C09G1/02 , C09K3/1463 , H01L21/0475 , H01L21/31053 , H01L21/31055 , H01L21/3212 , H01L21/76819 , H01L29/66545
摘要： The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
摘要翻译：本公开涉及一种高度可稀释的化学机械抛光浓缩物，其包含研磨剂，酸，稳定剂和水，其使用点pH为2.2-3.5，用于平坦化电流和下一代半导体集成电路FEOL / BEOL 底物。

10. 发明申请

US20110089143A1 HIGHLY DILUTABLE POLISHING CONCENTRATES AND SLURRIES 有权
标题翻译：高灵敏度的抛光浓度和流动性
公开(公告)号：US20110089143A1
公开(公告)日：2011-04-21
申请号：US12580868
申请日：2009-10-16
申请人： Hyungjun Kim , Richard Wen , Bin Hu , Minae Tanaka , Deepak Mahulikar
发明人： Hyungjun Kim , Richard Wen , Bin Hu , Minae Tanaka , Deepak Mahulikar
IPC分类号： C23F1/18 , C09K13/00
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/3212 , H01L21/7684
摘要： The present disclosure provides a concentrate for use in chemical mechanical polishing slurries, and a method of diluting that concentrate to a point of use slurry. The concentrate comprises abrasive, complexing agent, and corrosion inhibitor, and the concentrate is diluted with water and oxidizer. These components are present in amounts such that the concentrate can be diluted at very high dilution ratios, without affecting the polishing performance.
摘要翻译：本公开提供了用于化学机械抛光浆料的浓缩物，以及将该浓缩物稀释到使用点浆料的方法。浓缩物包括研磨剂，络合剂和缓蚀剂，浓缩物用水和氧化剂稀释。这些组分的存在量使得浓缩物可以以非常高的稀释比稀释，而不影响抛光性能。

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