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1. 发明授权

US10062804B2 Method of manufacturing nano-scale LED electrode assembly comprising selective metal ohmic layer 有权
公开(公告)号：US10062804B2
公开(公告)日：2018-08-28
申请号：US15355015
申请日：2016-11-17
申请人： PSI Co., Ltd.
发明人： Young Rag Do , Yeon Goog Sung
IPC分类号： H01L21/00 , H01L33/00 , B23K26/00
CPC分类号： H01L33/0075 , B23K26/00 , H01L33/0079
摘要： A method of manufacturing a nano-scale LED electrode assembly including a selective metal ohmic layer is disclosed. Specifically, the method can be useful in increasing conductivity between a nano-scale LED device and electrodes and also reducing contact resistance therebetween by depositing a conductive material in a region in which the nano-scale LED device comes in contact with the electrodes so as to improve the contact between the nano-scale LED device and the electrodes, thereby further improving light extraction efficiency of the nano-scale LED device.

2. 发明授权

US09978725B2 LED lamp using ultra-small LED electrode assembly 有权
公开(公告)号：US09978725B2
公开(公告)日：2018-05-22
申请号：US14903834
申请日：2014-07-08
申请人： PSI CO., LTD.
发明人： Young Rag Do
IPC分类号： H01L25/075 , H01L33/62 , H05K1/02 , H05K3/28 , H01L33/50 , H05K1/11 , H05K3/34
CPC分类号： H01L25/0753 , H01L33/504 , H01L33/507 , H01L33/62 , H01L2924/0002 , H05K1/0295 , H05K1/0296 , H05K1/111 , H05K3/28 , H05K3/3442 , H05K2201/09236 , H05K2201/09254 , H05K2201/09381 , H05K2201/0939 , H05K2201/09427 , H05K2201/09954 , H05K2201/10106 , H05K2201/10583 , H05K2201/10636 , H05K2201/10651 , H05K2203/048 , Y02P70/611 , H01L2924/00
摘要： Provided is an LED lamp using a nano-scale LED electrode assembly. The LED lamp using the nano-scale LED electrode assembly may solve limitations in which, when a nano-scale LED device according to the related art stands up and is three-dimensionally coupled to an electrode, it is difficult to allow the nano-scale LED device to stand up, and when the nano-scale LED devices are coupled to one-to-one correspond to electrodes different from each other, product quality is deteriorated. Thus, the nano-scale LED device having a nano unit may be connected to the two electrodes different from each other without causing defects, and light extraction efficiency may be improved due to the directivity of the nano-scale LED devices connected to the electrodes. Furthermore, deterioration in function of the LED lamp due to the defects of a portion of the nano-scale LEDs provided in the LED lamp may be minimized, and the LED lamp may have a flexible structure and shape by using the nano-scale LED electrode assembly of which a portion is deformable according to the used purpose or position of the LED lamp.

3. 发明申请

US20170317228A1 MICRO-LED ELEMENT FOR HORIZONTALLY-ALIGNED ASSEMBLY, METHOD FOR MANUFACTURING SAME, AND HORIZONTALLY-ALIGNED ASSEMBLY COMPRISING SAME 审中-公开
公开(公告)号：US20170317228A1
公开(公告)日：2017-11-02
申请号：US15528046
申请日：2015-11-13
申请人： PSI CO., LTD.
发明人： Yeon Goog SUNG
IPC分类号： H01L33/00 , H01L33/06 , H01L33/44 , H01L33/38 , H01L33/24 , H01L33/32 , H01L33/08 , B82B3/00
CPC分类号： H01L33/0075 , B82B3/0052 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/44 , H01L2224/95085 , H01L2933/0016 , H01L2933/0025
摘要： The present invention relates to a nano-scale light-emitting diode (LED) element for a horizontal array assembly, a manufacturing method thereof, and a horizontal array assembly including the same, and more particularly, to a nano-scale LED element for a horizontal array assembly that can significantly increase the number of nano-scale LED elements connected to an electrode line, facilitate an arrangement of the elements, and implement a horizontal array assembly having a very good electric connection between an electrode and an element and a significant high quantity of light when a horizontal array assembly having the nano-scale LED elements laid in a length direction thereof and connected to the electrode line is manufactured, a manufacturing method thereof, and a horizontal array assembly including the same.

4. 发明申请

US20170200859A1 Solvent For Manufacture Of Self-Assembled Nano-Scale LED Electrode Assembly And Method For Manufacturing Self-Assembled Nano-Scale LED Electrode Assembly By The Same 有权
公开(公告)号：US20170200859A1
公开(公告)日：2017-07-13
申请号：US15400747
申请日：2017-01-06
申请人： PSI Co., Ltd.
发明人： Young Rag DO , Yeon Goog SUNG
IPC分类号： H01L33/36 , H01L25/075 , H01L27/15 , H01L33/00
CPC分类号： H01L33/36 , H01L24/05 , H01L24/95 , H01L25/0753 , H01L27/156 , H01L33/005 , H01L33/20 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/95085 , H01L2224/95145 , H01L2924/10155 , H01L2924/12041 , H01L2933/0033 , H01L2924/00014
摘要： The present disclosure relates to a method for manufacturing a self-assembled nano-scale LED electrode assembly and more particularly, to a method for manufacturing a self-assembled nano-scale LED electrode assembly in which a nano-scale LED device can be self-aligned on two different electrodes without being chemically and physically damaged and the number of nano-scale LED devices to be mounted can be remarkably increased, and alignment and electrical connection of the LED devices can be further improved.

5. 发明授权

US09570425B2 Display comprising ultra-small LEDs and method for manufacturing same 有权
标题翻译：显示器包括超小型LED及其制造方法
公开(公告)号：US09570425B2
公开(公告)日：2017-02-14
申请号：US14903848
申请日：2014-07-08
申请人： PSI CO., LTD.
发明人： Young Rag Do
IPC分类号： H01L25/07 , H01L25/075 , H01L33/62 , G02F1/1335 , H01L33/44 , H01L33/50
CPC分类号： H01L25/0753 , G02F1/133603 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2224/32 , H01L2933/0025 , H01L2933/0041 , H01L2933/0066 , H01L2924/00014
摘要： Provided are a display including a nano-scale LED and a method for manufacturing the same. In detail, nano-scale LED devices, each of which has a nano unit, are connected to nano-scale electrodes without electrical short-circuit to overcome a limitation in which it is difficult to allow nano-scale LED devices according to the related art to stand up and be coupled to electrodes and a limitation in which it is difficult to allow the nano-scale LED devices to be one-to-one coupled to the nano-scale electrodes different from each other, thereby realizing a display including the nano-scale LEDs. Also, the display may have superior light extraction efficiency and prevent defective pixels and the defect of the whole display due to the defects of the nano-scale LED devices, which may rarely occur, from occurring to minimize the defects of the display including the nano-scale LEDs and maintain its original function.
摘要翻译：提供了包括纳米级LED的显示器及其制造方法。详细地说，具有纳米单元的纳米级LED器件连接到纳米级电极而没有电短路，以克服难以允许根据现有技术的纳米级LED器件的限制为了站立并耦合到电极，并且难以使纳米级LED器件与纳米级电极彼此不同地一一耦合的限制，从而实现包括纳米尺度的纳米尺度的显示器尺寸的LED。此外，显示器可以具有优异的光提取效率并且防止缺陷像素，并且由于可能很少发生的纳米级LED器件的缺陷而导致的整个显示器的缺陷，以使包括纳米尺寸的显示器的缺陷最小化尺寸的LED并保持原有的功能。

6. 发明授权

US09112112B2 Subminiature led element and manufacturing method thereof 有权
标题翻译：超小型led元件及其制造方法
公开(公告)号：US09112112B2
公开(公告)日：2015-08-18
申请号：US14114317
申请日：2012-04-27
申请人： Young-Rag Do , Yeon-Goog Sung
发明人： Young-Rag Do , Yeon-Goog Sung
IPC分类号： H01L33/00 , H01L33/36 , H01L33/44 , H01L33/18 , H01L33/08 , H01L33/52 , H01L33/06 , H01L33/20
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/52 , H01L2224/95
摘要： Disclosed is a subminiature LED element and a manufacturing method thereof. The subminiature LED element includes a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, and a semiconductor light emission element of a micrometer or nanometer size including a second conductive semiconductor layer formed on the active layer, wherein the outer circumference of the semiconductor light emission element is coated with an insulation film. The manufacturing method includes 1) forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer in order on a substrate, 2) etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer so that the LED element has a diameter of a nanometer or micrometer level, and 3) forming an insulation film on the outer circumference of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer and removing the substrate. Therefore, a subminiature LED element of a nanometer or micrometer size may be effectively produced by combining a top-down manner and a bottom-up manner, and light emission efficiency may be improved by preventing a surface defect of the produced subminiature LED element.
摘要翻译：公开了一种超小型LED元件及其制造方法。所述超小型LED元件包括第一导电半导体层，形成在所述第一导电半导体层上的有源层和包括在所述有源层上形成的第二导电半导体层的微米或纳米尺寸的半导体发光元件，其中所述外周的半导体发光元件涂覆有绝缘膜。制造方法包括：1）在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层，2）蚀刻第一导电半导体层，有源层和第二导电半导体层，使得LED 元件具有纳米或微米级的直径，以及3）在第一导电半导体层，有源层和第二导电半导体层的外周上形成绝缘膜，并去除衬底。因此，通过结合自顶向下的方式和自底向上的方式可以有效地制造纳米或微米尺寸的超小型LED元件，并且可以通过防止所制造的超小型LED元件的表面缺陷来提高发光效率。

7. 发明申请

US20180287010A1 ELECTRODE ASSEMBLY COMPRISING MICRO-LED ELEMENTS AND METHOD FOR MANUFACTURING SAME 审中-公开
公开(公告)号：US20180287010A1
公开(公告)日：2018-10-04
申请号：US15528035
申请日：2015-11-13
申请人： PSI CO., LTD.
发明人： Yeon Goog SUNG
IPC分类号： H01L33/08 , H01L33/06 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/00 , B82B3/00
摘要： The present invention relates to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same and, more specifically, to an electrode assembly comprising nano-scale-LED elements and a method for manufacturing the same, in which the number of nano-scale-LED elements included in a unit area of the electrode assembly is increased, the light extraction efficiency of individual nano-scale-LED elements is increased so as to maximize light intensity per unit area, and at the same time, nano-scale-LED elements on a nanoscale are connected to an electrode without a fault such as an electrical short circuit.

8. 发明申请

US20170141279A1 Method Of Manufacturing Nano-Scale LED Electrode Assembly Comprising Selective Metal Ohmic Layer 审中-公开
公开(公告)号：US20170141279A1
公开(公告)日：2017-05-18
申请号：US15355015
申请日：2016-11-17
申请人： PSI Co., Ltd.
发明人： Young Rag DO , Yeon Goog SUNG
IPC分类号： H01L33/62 , H01L33/38 , H01L33/00 , H01L33/48
CPC分类号： H01L33/0075 , B23K26/00 , H01L33/0079
摘要： A method of manufacturing a nano-scale LED electrode assembly including a selective metal ohmic layer is disclosed. Specifically, the method can be useful in increasing conductivity between a nano-scale LED device and electrodes and also reducing contact resistance therebetween by depositing a conductive material in a region in which the nano-scale LED device comes in contact with the electrodes so as to improve the contact between the nano-scale LED device and the electrodes, thereby further improving light extraction efficiency of the nano-scale LED device.

9. 发明授权

US09059114B2 Full-color LED display device and manufacturing method thereof 有权
标题翻译：全彩LED显示装置及其制造方法
公开(公告)号：US09059114B2
公开(公告)日：2015-06-16
申请号：US14114338
申请日：2012-04-27
申请人： Young-Rag Do , Yeon-Goog Sung
发明人： Young-Rag Do , Yeon-Goog Sung
IPC分类号： H01L27/32 , H01L25/075 , H01L33/50 , H01L33/08 , H01L33/18 , H01L33/32 , H01L27/15 , H01L33/62
CPC分类号： H01L27/3213 , H01L25/0753 , H01L27/15 , H01L27/3206 , H01L27/3211 , H01L33/08 , H01L33/18 , H01L33/32 , H01L33/50 , H01L33/504 , H01L33/508 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a full-color LED display device and a manufacturing method thereof. The full-color LED display device includes 1) a plurality of first electrodes formed on a substrate, 2) at least five subminiature blue LED elements attached to each unit pixel site formed on the first electrode, 3) an insulation layer formed on the substrate and the blue LED element, 4) a plurality of second electrodes formed on the insulation layer, and 5) a green color conversion layer and a red color conversion layer formed on the second electrode corresponding to partial unit pixel sites selected from the unit pixel sites. The manufacturing method of a full-color LED display device includes 1) forming a plurality of first electrodes on a substrate, 2) attaching at least five subminiature blue LED elements to each unit pixel site formed on the first electrode, 3) forming an insulation layer on the substrate, 4) forming a plurality of second electrodes on the insulation layer, and 5) successively patterning a green color conversion layer and a red color conversion layer on the second electrode corresponding to partial unit pixel sites selected from the unit pixel sites.
摘要翻译：公开了一种全彩LED显示装置及其制造方法。全色LED显示装置包括：1）形成在基板上的多个第一电极，2）至少五个附着于形成在第一电极上的每个单位像素位置的微小蓝色LED元件，3）形成在该基板上的绝缘层和蓝色LED元件，4）形成在绝缘层上的多个第二电极，以及5）形成在第二电极上的绿色转换层和红色转换层，对应于从单位像素点选择的部分单位像素位置。全色LED显示装置的制造方法包括：1）在基板上形成多个第1电极，2）在形成于第1电极上的各单位像素部位附着至少5个以上的微小蓝色LED元件，3）形成绝缘体 4）在所述绝缘层上形成多个第二电极，以及5）在所述第二电极上依次构图绿色转换层和红色转换层，对应于从单位像素点选择的部分单位像素位置。

10. 发明申请

US20140145237A1 SUBMINIATURE LED ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：子系统LED元件及其制造方法
公开(公告)号：US20140145237A1
公开(公告)日：2014-05-29
申请号：US14114317
申请日：2012-04-27
申请人： Young-Rag Do , Yeon-Goog Sung
发明人： Young-Rag Do , Yeon-Goog Sung
IPC分类号： H01L33/36 , H01L33/08
CPC分类号： H01L33/36 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/08 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/52 , H01L2224/95
摘要： Disclosed is a subminiature LED element and a manufacturing method thereof. The subminiature LED element includes a first conductive semiconductor layer, an active layer formed on the first conductive semiconductor layer, and a semiconductor light emission element of a micrometer or nanometer size including a second conductive semiconductor layer formed on the active layer, wherein the outer circumference of the semiconductor light emission element is coated with an insulation film. The manufacturing method includes 1) forming a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer in order on a substrate, 2) etching the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer so that the LED element has a diameter of a nanometer or micrometer level, and 3) forming an insulation film on the outer circumference of the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer and removing the substrate. Therefore, a subminiature LED element of a nanometer or micrometer size may be effectively produced by combining a top-down manner and a bottom-up manner, and light emission efficiency may be improved by preventing a surface defect of the produced subminiature LED element.
摘要翻译：公开了一种超小型LED元件及其制造方法。所述超小型LED元件包括第一导电半导体层，形成在所述第一导电半导体层上的有源层和包括在所述有源层上形成的第二导电半导体层的微米或纳米尺寸的半导体发光元件，其中所述外周的半导体发光元件涂覆有绝缘膜。制造方法包括：1）在衬底上依次形成第一导电半导体层，有源层和第二导电半导体层，2）蚀刻第一导电半导体层，有源层和第二导电半导体层，使得LED 元件具有纳米或微米级的直径，以及3）在第一导电半导体层，有源层和第二导电半导体层的外周上形成绝缘膜，并去除衬底。因此，通过结合自顶向下的方式和自底向上的方式可以有效地制造纳米或微米尺寸的超小型LED元件，并且可以通过防止所制造的超小型LED元件的表面缺陷来提高发光效率。

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