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    • 7. 发明授权
    • Polyurethane jacketing of metal sheathed cable
    • 金属护套电缆聚氨酯护套
    • US3980807A
    • 1976-09-14
    • US559175
    • 1975-03-17
    • Leo Victor Woytiuk
    • Leo Victor Woytiuk
    • H01B7/18H01B13/22
    • H01B7/1875H01B13/221
    • A method of jacketing an electric cable having a corrugated metal sheath, in which the sheath is cleaned, a coating of thermosetting, castable polyurethane is applied to fill the troughs in the corrugations, a fabric is wrapped onto the coated sheath and coated with the same polyurethane, and thermoplastic polyurethane is extruded onto the cable to form a jacket. The coatings of the polyurethane serve as an adhesive for bonding the jacket to the metal sheath. A cable produced by this method comprises a layer of fabric circumscribing the corrugated metal sheath and a jacket of thermoplastic polyurethane overlying the sheath, the fabric being embedded in a layer of thermosetting, castable polyurethane bonding the jacket to the sheath.
    • 一种将具有波纹金属护套(其中护套被清洁的电缆)的电缆护套的方法,用于填充波纹中的槽的热固性浇注聚氨酯涂层,将织物包裹在涂覆的护套上并用其涂覆 聚氨酯和热塑性聚氨酯挤出到电缆上以形成外套。 聚氨酯的涂层用作将护套粘合到金属护套上的粘合剂。 通过该方法生产的电缆包括一层围绕波纹金属护套的织物和覆盖护套的热塑性聚氨酯护套,该织物被嵌入一层热固性浇注聚氨酯中,将护套粘合到护套上​​。
    • 8. 发明授权
    • Monolithic light-emitting diode and modulator
    • 单片发光二极管和调制器
    • US3975751A
    • 1976-08-17
    • US507454
    • 1974-09-19
    • Anthony John Springthorpe
    • Anthony John Springthorpe
    • G02F1/015H01L27/15H01L31/12H01L31/16
    • H01L31/125G02F1/015H01L27/15
    • For a reversed bias double heterostructure diodes, particularly GaAs diodes, electroabsorption can be obtained with reverse bias and light emission can be obtained with forward bias. However bulk absorption is large at wavelengths close to the band edge, where light emission occurs. Thus light emission through a modulator at zero bias is low. By providing for the light emulsion to be at a larger wavelength than that corresponding to the band edge high modulation efficiencies can be obtained. This is achieved by suitably doping the emitter differently as compared with the modulator so that light emission occurs at wavelengths greater than that at the fundamental energy gap.
    • 对于反向偏置双异质结构二极管,特别是GaAs二极管,可以通过反向偏置获得电吸收,并且可以以正向偏压获得发光。 然而,在发生发光的带边缘附近的波长处,体积吸收较大。 因此,在零偏压下通过调制器的发光是低的。 通过将光乳剂设置在比对应于带边缘的波长更大的波长上,可以获得高调制效率。 这通过与调制器相比不同地适当地掺杂发射器来实现,使得发光在大于基本能隙处的波长处发生。