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1. 发明授权

US06875325B2 Sputtering target producing few particles 有权
标题翻译：溅射靶产生少量颗粒
公开(公告)号：US06875325B2
公开(公告)日：2005-04-05
申请号：US10297265
申请日：2001-04-20
申请人： Hirohito Miyashita , Takeo Okabe
发明人： Hirohito Miyashita , Takeo Okabe
IPC分类号： C23C4/00 , C23C4/08 , C23C14/00 , C23C14/34 , C23C14/56
CPC分类号： C23C14/564 , C23C4/00 , C23C14/3414
摘要： A sputtering target having a sprayed coating at least on the side face thereof and producing few particles. The deposit produced on the side face of the sputtering target is prevented from separating and flying.
摘要翻译：一种溅射靶，其至少在其侧面具有喷涂涂层，并且产生很少的颗粒。防止在溅射靶的侧面产生的沉积物分离和飞行。

2. 发明授权

US06844532B2 MoSi2 arc-shaped heater, and method and device for manufacturing the heater 有权
标题翻译： MoSi2弧形加热器，以及用于制造加热器的方法和装置
公开(公告)号：US06844532B2
公开(公告)日：2005-01-18
申请号：US10399896
申请日：2002-02-04
申请人： Hiroshi Takamura , Daisuke Takagaki
发明人： Hiroshi Takamura , Daisuke Takagaki
IPC分类号： B23K1/005 , B23K1/008 , H05B3/10 , H05B3/14 , H05B3/62 , H05B3/64 , H05B3/12
CPC分类号： H05B3/62 , B23K1/0053 , B23K1/008 , H05B3/143 , H05B3/64 , H05B2203/018 , Y10T29/49083
摘要： A MoSi2 arc-shaped heater formed in a continuous waveform, characterized in that U-shaped heater members having parallel parts are connected alternately to each other at the end parts, and the parallel faces of the U-shaped heater members have an angle relative to each other and an arc-shaped face with a specified curvature in a connecting direction, wherein a large number of parallel U-shaped heater members having heating parts are connected to each other and welded so that the heater can have a generally arc-shaped curved surface to install the heater onto the inner wall of a heating furnace, whereby the arc heater having an excellent joining strength and capable of being manufactured stably, and a method and a device for manufactured the heater can be provided.
摘要翻译：形成为连续波形的MoSi 2弧形加热器，其特征在于，具有平行部分的U形加热器部件在端部彼此交替连接，并且U形加热器部件的平行面相对于彼此连接并且具有在连接方向上具有特定曲率的弧形面，其中具有加热部件的大量平行的U形加热器部件彼此连接并焊接，使得加热器可以具有大致弧形的弯曲表面，以将加热器安装在加热炉的内壁上，由此可以提供具有优异的接合强度并且能够稳定制造的电弧加热器，以及用于制造加热器的方法和装置。

3. 发明授权

US06843975B1 Oxide sintered body and manufacturing method thereof 有权
标题翻译：氧化物烧结体及其制造方法
公开(公告)号：US06843975B1
公开(公告)日：2005-01-18
申请号：US10130238
申请日：2001-09-17
申请人： Ryo Suzuki
发明人： Ryo Suzuki
IPC分类号： C04B35/00 , C01G55/00 , C04B35/01 , C04B35/645 , C23C14/34 , H01L21/203 , H01L21/316 , B29C67/00 , C01F11/00
CPC分类号： C04B35/01 , C01G55/00 , C01P2002/34 , C01P2006/10 , C01P2006/40 , C04B35/6455 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215
摘要： The present invention relates to an oxide sintered body having a perovskite structure represented with a chemical formula of MRuO3 (M: one or more types among Ca, Sr, Ba), characterized in that the total content of alkali metals such as Na, K, and Fe, Ni, Co, Cr, Cu, Al is 100 ppm or less, the content of respective elements U, Th is 10 ppb or less, and the relative density is 90% or more, and provides an oxide sintered body and the manufacturing method thereof having a pervoskite structure represented with the chemical formula MRuO3 (M: one or more types among Ca, Sr, Ba) by using a MRuO3 sintered body raw material refined to a high density of 4N or more, which enables sintering at low temperatures, and which is capable of obtaining a high-density sintered body.
摘要翻译：本发明涉及以化学式为MRuO3（M：Ca，Sr，Ba中的一种或多种）代表的钙钛矿结构的氧化物烧结体，其特征在于碱金属如Na，K， Fe，Ni，Co，Cr，Cu，Al为100ppm以下，各元素U，Th的含量为10ppb以下，相对密度为90％以上，提供氧化物烧结体，通过使用精加工成4N以上的高密度的MRuO 3烧结体原料，使具有化学式MRuO3（M：Ca，Sr，Ba中的一种或多种）的渗透性结构的制造方法，其能够低温烧结温度，并且能够获得高密度烧结体。

4. 发明授权

US6132487A Mixed powder for powder metallurgy, sintered compact of powder metallurgy, and methods for the manufacturing thereof 有权
标题翻译：粉末冶金用混合粉末，粉末冶金用烧结体及其制造方法
公开(公告)号：US6132487A
公开(公告)日：2000-10-17
申请号：US437913
申请日：1999-11-09
申请人： Hideyuki Mori
发明人： Hideyuki Mori
IPC分类号： C22C1/04 , C22C9/00 , F16C33/12 , B22F3/00
CPC分类号： C22C9/00 , C22C1/04 , B22F2999/00
摘要： A mixed metallurgical powder is provided containing powdered copper used for the manufacture of sintered structural parts such as brushes. A sintered compact made of the mixed metallurgical powder and a method for the manufacture of the sintered compact are also provided. The powder and the sintered compact are provide with an extremely high corrosion resistance because, preferably, the mixed metallurgical powder contains powdered copper and 20-400 ppm by weight of Bi in the form of powdered Bi.
摘要翻译：提供含有用于制造烧结结构件如刷子的粉末状铜的混合冶金粉末。还提供了由混合冶金粉末制成的烧结体和用于制造烧结体的方法。粉末和烧结体具有非常高的耐腐蚀性，因为优选地，混合冶金粉末含有粉末状铜和20-400ppm重量的Bi粉末形式的Bi。

5. 发明授权

US06861030B2 Method of manufacturing high purity zirconium and hafnium 有权
标题翻译：制造高纯度锆和铪的方法
公开(公告)号：US06861030B2
公开(公告)日：2005-03-01
申请号：US10182764
申请日：2001-06-29
申请人： Yuichiro Shindo
发明人： Yuichiro Shindo
IPC分类号： B22F9/02 , C22B9/22 , C22B34/14 , C22C1/04 , C22C16/00 , C22C27/00 , C23C14/34 , H01L21/28 , H01L23/532 , H01L29/51 , C22L27/00
CPC分类号： H01L21/28194 , B22F9/023 , C22B9/228 , C22B34/14 , C22C1/0458 , C22C16/00 , C22C27/00 , C23C14/3414 , H01L23/53257 , H01L29/51 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to high-purity zirconium or hafnium with minimal impurities, particularly where the content of alkali metal elements such as Na, K; radioactive elements such as U, Th; transitional metals or heavy metals or high melting point metal elements such as Fe, Ni, Co, Cr, Cu, Mo, Ta, V; and gas components such as C, O, etc. is extremely reduced, as well as to an inexpensive manufacturing method of such high-purity zirconium or hafnium, thereby reducing the impurities hindering the guarantee of the operational performance of semiconductors. The present invention further relates to an inexpensive and safe manufacturing method of high-purity zirconium or hafnium powder from hydrogenated high-purity zirconium or hafnium powder.
摘要翻译：本发明涉及具有最小杂质的高纯度锆或铪，特别是碱金属元素如Na，K的含量; 放射性元素如U，Th; 过渡金属或重金属或高熔点金属元素如Fe，Ni，Co，Cr，Cu，Mo，Ta，V; 并且气体成分例如C，O等被极大地降低，并且成为这种高纯度锆或铪的廉价的制造方法，从而减少妨碍半导体操作性能的保证的杂质。本发明还涉及从氢化的高纯度锆或铪粉末制成的高纯度锆或铪粉末的廉价且安全的制造方法。

6. 发明授权

US06858116B2 Sputtering target producing few particles, backing plate or sputtering apparatus and sputtering method producing few particles 有权
标题翻译：产生少量颗粒的溅射靶，背板或溅射装置和产生少量颗粒的溅射方法
公开(公告)号：US06858116B2
公开(公告)日：2005-02-22
申请号：US10297232
申请日：2001-05-23
申请人： Takeo Okabe , Yasuhiro Yamakoshi , Hirohito Miyashita
发明人： Takeo Okabe , Yasuhiro Yamakoshi , Hirohito Miyashita
IPC分类号： C23C4/00 , C23C4/02 , C23C14/34 , C23C14/56 , C23C16/44 , H01J37/34
CPC分类号： C23C4/00 , C23C4/02 , C23C14/3414 , H01J37/3435
摘要： A sputtering target producing few particles, a backing plate or a sputtering apparatus, and a sputtering method producing few particles. An arc-spraying coating film and a plasma-spraying coating film over the former are formed on the sputtering target, a backing plate, or another surface in the sputtering apparatus, where an unwanted film might be formed. Thus a deposit is prevent from separating/flying from the target, backing plate, or another surface where an unwanted film might be formed in the sputtering apparatus.
摘要翻译：产生少量颗粒的溅射靶，背板或溅射装置，以及几乎不产生颗粒的溅射方法。在溅射靶，背板或溅射装置中可能形成不需要的膜的另一表面上形成有在前者上的电弧喷涂涂层膜和等离子体喷镀涂膜。因此，防止沉积物从靶材，背板或在溅射装置中可能形成不想要的膜的另一表面分离/飞散。

7. 发明授权

US06896788B2 Method of producing a higher-purity metal 有权
标题翻译：生产高纯度金属的方法
公开(公告)号：US06896788B2
公开(公告)日：2005-05-24
申请号：US10130244
申请日：2001-02-06
申请人： Yuichiro Shindo , Syunichiro Yamaguchi , Kouichi Takemoto
发明人： Yuichiro Shindo , Syunichiro Yamaguchi , Kouichi Takemoto
IPC分类号： C25C1/00 , C25C1/06 , C25C1/08 , C25C1/16
CPC分类号： C25C1/08 , C25C1/00 , C25C1/06 , C25C1/16
摘要： A method of producing a higher purity metal comprising the step of electrolyzing a coarse metal material by a primary electrolysis to obtain a primary electrodeposited metal, the step of electrolyzing the material with the primary electrodeposited metal obtained in the primary electrolysis step used as an anode to obtain a higher purity electrolyte for secondary electrolysis, and the step of further performing secondary electrolysis by employing higher purity electrolytic solution than said electrolytic solution with said primary electrodeposited metal as an anode, whereby providing an electro-refining method that effectively uses electrodes and an electrolyte produced in a plurality of electro-refining steps, reuses the flow of an electrolyte in the system, reduces organic matter-caused oxygen content, and can effectively produce a high purity metal.
摘要翻译：一种高纯度金属的制造方法，其特征在于，包括以下步骤：通过一次电解电解粗大的金属材料，得到一次电沉积金属;将所述原电解沉积金属中的原电解沉积金属电解为阳极的工序; 获得用于二次电解的较高纯度的电解质，以及通过使用比所述电解溶液更高纯度的电解液进一步进行二次电解的步骤，其中所述主电解沉积金属作为阳极，由此提供有效地使用电极和电解质的电精制法在多个电精制工序中产生，重新使用系统中的电解质流，减少有机物引起的氧含量，并能有效地产生高纯金属。

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