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1. 发明授权

US11446913B2 Laminating apparatus 有权
公开(公告)号：US11446913B2
公开(公告)日：2022-09-20
申请号：US17321686
申请日：2021-05-17
申请人： Nikko-Materials Co., Ltd.
发明人： Kazutoshi Iwata , Yoshiaki Honma , Takeshi Yamaguchi , Taihei Matsumoto
IPC分类号： B32B37/10 , B29C65/18 , B32B37/06
摘要： Provided is a laminating apparatus configured to improve the uniformity of the thickness of a laminate to be obtained to improve the yield of a product, such as a laminate. The laminating apparatus includes a pressing device including a first press block that is advanceable and retreatable, a second press block arranged to face the first press block, a first pressing rubber mounted inside the first press block, and a second pressing rubber mounted inside the second press block, the first pressing rubber and the second pressing rubber facing each other, the first pressing rubber having formed on a surface thereof facing the second pressing rubber a convex frame configured to surround a peripheral edge portion thereof.

2. 发明授权

US11331892B2 Laminating apparatus 有权
公开(公告)号：US11331892B2
公开(公告)日：2022-05-17
申请号：US17330637
申请日：2021-05-26
申请人： Nikko-Materials Co., Ltd.
发明人： Kazutoshi Iwata , Yoshiaki Honma , Takeshi Yamaguchi , Taihei Matsumoto
IPC分类号： B32B37/00 , B32B37/10 , B29C65/00
摘要： A laminating apparatus for improving the uniformity of the thickness of a resulting laminate to improve the yield of products such as laminates is provided. A pressing device includes: a first press block movable back and forth; a second press block disposed in opposed relation to the first press block; a first pressing plate mounted to the inside of the first press block; and a second pressing plate mounted to the inside of the second press block. The first pressing plate and the second pressing plate are opposed to each other. A surface of the first pressing plate which is opposed to the second pressing plate has a peripheral portion formed into a tapered surface in such a manner that the distance from the second pressing plate increases in an outward direction.

3. 发明授权

US10081170B2 Laminating apparatus 有权
公开(公告)号：US10081170B2
公开(公告)日：2018-09-25
申请号：US14462893
申请日：2014-08-19
申请人： NICHIGO-MORTON CO., LTD. , SHIN-ETSU CHEMICAL CO., LTD.
发明人： Ryoichi Yasumoto , Kazutoshi Iwata , Kinya Kodama , Grigoriy Basin
IPC分类号： B32B37/10 , B32B39/00 , B29C43/18 , B32B37/00 , H01L33/52 , H05K3/28
CPC分类号： B32B37/10 , B29C43/18 , B32B37/003 , B32B37/1009 , B32B39/00 , B32B2309/12 , B32B2309/65 , B32B2309/68 , B32B2457/08 , H01L33/52 , H05K3/284 , H05K2203/1311 , Y10T156/1744
摘要： A laminating apparatus for a provisionally laminated body is provided and is configured to form an end laminated body including one of a first resin film and a second resin film conforming to protruding and recessed portions of a substrate. The laminating apparatus may include first and second laminating mechanisms. The first laminating mechanism may include a first enclosed space forming receiver, a depressurizer, a heater, and a first pressure laminator to form an intermediate laminated body from the provisionally laminated body. The second laminating mechanism may include a second enclosed space forming receiver, and a second pressure laminator to form the end laminated body from the intermediate laminated body.

4. 发明申请

US20180162111A1 LAMINATING APPARATUS 审中-公开
公开(公告)号：US20180162111A1
公开(公告)日：2018-06-14
申请号：US15575442
申请日：2016-06-03
申请人： Nikko-Materials Co., Ltd.
发明人： Kazutoshi IWATA , Yoshiaki HONMA
IPC分类号： B32B37/10 , B32B41/00 , H05K3/46
CPC分类号： B32B37/1054 , B29C43/28 , B29C43/58 , B29C2043/5808 , B29C2043/5833 , B29K2905/00 , B29L2031/34 , B29L2031/3425 , B32B37/1018 , B32B41/00 , B32B2457/08 , H05K3/4655 , H05K2203/0278 , H05K2203/063 , H05K2203/085 , H05K2203/163
摘要： A laminating apparatus includes workpiece transport units, a vacuum laminating device and a flat press device. The flat press device includes a ball screw having a screw shaft and supporting a first one of a pair of pressing elements, a servomotor connected to the screw shaft of the ball screw, a gap measuring device (linear scale) for measuring a distance between the first pressing element and the second pressing element, and a pressing gap control system for moving the first pressing element to a position in which a predetermined gap is defined between the first pressing element and the second pressing element to stop the first pressing element at that position. The pressing gap control system changes the RPM of the servomotor, based on information on the distance between the first and second pressing elements which is provided from the gap measuring device.

5. 发明授权

US07651783B2 Surface treated copper film 有权
标题翻译：表面处理铜膜
公开(公告)号：US07651783B2
公开(公告)日：2010-01-26
申请号：US10486274
申请日：2002-07-17
申请人： Katsuyuki Tsuchida , Masashi Kumagai , Fumiaki Akase
发明人： Katsuyuki Tsuchida , Masashi Kumagai , Fumiaki Akase
IPC分类号： H05K1/03 , H05K3/38 , H05K3/46 , B32B15/08
CPC分类号： C23C28/00 , C23C30/00 , H05K3/384 , H05K3/389 , Y10T428/12438 , Y10T428/12569 , Y10T428/12611 , Y10T428/12792 , Y10T428/12882 , Y10T428/12903 , Y10T428/1291 , Y10T428/12993 , Y10T428/31663
摘要： A surface treated copper foil with improved adhesion to the insulating resin of a copper-clad laminate for higher frequency applications contains a copper foil provided with a heat-resistant layer and an olefin-based silane coupling agent layer sequentially on at least one side thereof. An anticorrosive treatment may be performed after the heat resistance treatment. The copper foil is preferably an electrolytic copper foil, and these layers can be provided on the S side and/or the M side thereof. The copper foil has an adequate adhesive strength, even without the roughening treatment that has been performed in the past. A film of zinc, zinc-tin, zinc-nickel, zinc-cobalt, copper-zinc, copper-nickel-cobalt, or nickel-cobalt can be used favorably as the heat-resistant layer, and a film that has undergone a zinc-chromate or a chromate treatment can be used favorably as the anticorrosive layer.
摘要翻译：与用于更高频率应用的覆铜层压板的绝缘树脂具有改善的粘合性的表面处理铜箔包含在其至少一侧上依次具有耐热层和烯烃基硅烷偶联剂层的铜箔。耐热处理后可以进行防锈处理。铜箔优选为电解铜箔，这些层可以设置在S侧和/或M侧。铜箔具有足够的粘合强度，即使没有在过去进行的粗糙化处理。可以有利地使用锌，锌 - 锡，锌 - 镍，锌 - 钴，铜 - 锌，铜 - 镍 - 钴或镍 - 钴的薄膜作为耐热层，并且已经经历了锌铬酸盐或铬酸盐处理可以有利地用作防腐层。

6. 发明授权

US07288242B2 Lithium-containing complex oxide and method of producing same 有权
标题翻译：含锂复合氧化物及其制造方法
公开(公告)号：US07288242B2
公开(公告)日：2007-10-30
申请号：US10510800
申请日：2003-01-15
申请人： Hiroshi Tasaki , Yoshio Kajiya
发明人： Hiroshi Tasaki , Yoshio Kajiya
IPC分类号： C01D15/00 , C01D15/02
CPC分类号： H01M4/505 , C01G45/1242 , C01P2004/03 , C01P2004/32 , C01P2006/11 , H01M10/052 , H01M2004/021
摘要： A lithium-containing complex oxide exhibits a high performance as a cathode active material of a lithium secondary cell or the like and having a high tap density. A granular lithium-containing complex oxide, such as lithium manganese complex oxide, is made up of “complex oxide grains produced by integrating lithium-rich material grains abnormally grown during a firing reaction with the surfaces of the base grains by sintering.” The number of complex oxide grains is not more than 50 per gram of the complex grains. A metal oxide such as manganese oxide and lithium carbonate not more than 5 μm in average grain size are mixed by means of a mixer which grinds and mixes particles by using a shearing force and heated and fired at a warming rate of not more than 50° C./h., thus producing the lithium-containing complex oxide.
摘要翻译：含锂复合氧化物表现出作为锂二次电池等的正极活性物质的高性能，并且具有高振实密度。颗粒状含锂复合氧化物如锂锰复合氧化物由“通过烧结而使烧结反应期间异常生长的富含锂的材料颗粒与基体颗粒的表面积分的复合氧化物颗粒”组成。复合氧化物颗粒的数量不超过每克复合颗粒的50个。平均粒径不超过5μm的氧化锰和碳酸锂的金属氧化物通过使用剪切力研磨和混合颗粒的混合器混合，并以不大于50°的加热速率加热和烧制 C./h，从而制造含锂复合氧化物。

7. 发明申请

US20060147740A1 Sputtering target, thin film for optical information recording medium and process for producing the same 有权
标题翻译：溅射靶，光学信息记录介质用薄膜及其制造方法
公开(公告)号：US20060147740A1
公开(公告)日：2006-07-06
申请号：US10547815
申请日：2004-02-03
申请人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
发明人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
IPC分类号： B22D7/00
CPC分类号： C23C14/086 , C04B35/453 , C04B2235/3217 , C04B2235/3225 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/77 , C04B2235/775 , C23C14/3414 , G11B7/2531 , G11B7/2578 , G11B7/266 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , Y02T50/67 , Y10T428/12
摘要： Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1
摘要翻译：本发明提供一种具有80％以上的相对密度的溅射靶，其含有主要成分为氧化锌的化合物，所述氧化锌满足A B Y + KbY）/ 2（ZnO）m 1，m，X，m，0

8. 发明申请

US20060137782A1 Target of high-purity nickel or nickel alloy and its producing method 有权
公开(公告)号：US20060137782A1
公开(公告)日：2006-06-29
申请号：US11332045
申请日：2006-01-13
申请人： Yasuhiro Yamakoshi , Hirohito Miyashita
发明人： Yasuhiro Yamakoshi , Hirohito Miyashita
IPC分类号： C22F1/10
CPC分类号： C22C19/03 , C22F1/10 , C23C14/3414 , G11B5/851 , H01F41/183
摘要： Provided is high purity nickel or nickel alloy target for Magnetron sputtering having superior sputtering film uniformity and in which the magnetic permeability of the target is 100 or more, and this high purity nickel or a nickel alloy target for magnetron sputtering capable of achieving a favorable film uniformity (evenness of film thickness) and superior plasma ignition (firing) even during the manufacturing process employing a 300 mm wafer. The present invention also provides the manufacturing method of such high purity nickel or nickel alloy target.

9. 发明申请

US20050232849A1 High purity copper sulfate and method for production thereof 有权
标题翻译：高纯度硫酸铜及其制造方法
公开(公告)号：US20050232849A1
公开(公告)日：2005-10-20
申请号：US10522273
申请日：2003-08-12
申请人： Yuichiro Shindo , Kouichi Takemoto
发明人： Yuichiro Shindo , Kouichi Takemoto
IPC分类号： C01G3/10 , C22B15/00
CPC分类号： C01G3/10 , C22B15/0089 , Y02P10/236
摘要： High purity copper sulfate having a purity of 99.99% or higher and in which the content of transition metals such as Fe, Cr, Ni is 3 wtppm or less; and a method for producing such high purity copper sulfate which includes the steps of dissolving copper sulfate crystals in purified water, performing evaporative concentration thereto, removing the crystals precipitated initially, performing further evaporative concentration to effect crystallization, and subjecting this to filtration to obtain high purity copper sulfate. This manufacturing method of high purity copper sulfate allows the efficient removal of impurities from commercially available copper sulfate crystals at a low cost through dissolution with purified water and thermal concentration.
摘要翻译：纯度为99.99％以上的高纯度硫酸铜，Fe，Cr，Ni等过渡金属的含量为3重量ppm以下。以及生产这种高纯度硫酸铜的方法，其包括将硫酸铜晶体溶解在纯净水中，进行蒸发浓缩，除去最初沉淀的晶体，进一步蒸发浓缩以进行结晶，并将其过滤得到高纯度为硫酸铜。这种高纯度硫酸铜的制造方法允许通过用纯化水溶解和热浓缩，以低成本有效地从市售的硫酸铜晶体中除去杂质。

10. 发明授权

US06875272B2 Method for preparing GaN based compound semiconductor crystal 失效
标题翻译：制备GaN基化合物半导体晶体的方法
公开(公告)号：US06875272B2
公开(公告)日：2005-04-05
申请号：US10481253
申请日：2002-06-14
申请人： Keiji Kainosho , Shinichi Sasaki
发明人： Keiji Kainosho , Shinichi Sasaki
IPC分类号： C23C16/34 , C30B33/00 , H01L21/20 , H01L21/205 , H01L33/32 , C30B25/14
CPC分类号： C30B33/00 , C30B29/403 , C30B29/406 , C30B29/60
摘要： In a method for growing a GaN based compound semiconductor on a front surface of a substrate to obtain the GaN based compound semiconductor crystal in one body, because the gas for reducing and decomposing the substrate is supplied to the rear surface of the substrate and a heat treatment is carried out in a gas atmosphere in which the nitrogen partial pressure is not less than a predetermined value, in order to remove the substrate, it can be prevented that cracks are caused in the crystal, or fracture or warp is caused by causing strain of the GaN based compound semiconductor crystal in a cooling step.
摘要翻译：在用于在衬底的前表面上生长GaN基化合物半导体以在一个体内获得GaN基化合物半导体晶体的方法中，由于将用于还原和分解衬底的气体供应到衬底的后表面，并且发热在氮分压不小于预定值的气体气氛中进行处理，为了去除基板，可以防止在晶体中引起裂纹，或者由于应变导致断裂或翘曲的GaN基化合物半导体晶体。

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