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1. 发明授权

US3905776A Method of making a thin, ferro-magnetic memory layer and article made thereby 失效
标题翻译：制造薄铁磁记忆层的方法和由此制成的制品
公开(公告)号：US3905776A
公开(公告)日：1975-09-16
申请号：US37685673
申请日：1973-07-05
申请人： NICO MAGNETICS INC
发明人： LONG KENNETH E , TAYLOR DAVID W
IPC分类号： C25D3/12 , G11B5/858 , H01F10/06 , B23P3/00 , G11C11/02 , G11C11/04
CPC分类号： H01F10/06 , C25D3/12 , G11B5/858 , Y10S205/922 , Y10S428/926 , Y10T428/12063 , Y10T428/12896
摘要： A ferromagnetic layer having high information density capabilities is deposited on a suitable substrate in a thin, continuous, uniform and coherent manner utilizing a process which involves providing the substrate with a conductive copper surface and electrodepositing a ferromagnetic layer of cobalt no greater than 20 microinches, on top of the copper. The cobalt is deposited in the form of hexagonal crystals from a bath of cobalt chloride buffered with a low molecular weight carboxylic acid in a pH range of between about 3.6 and 5.8. The cobalt electrodeposit is then covered with a suitable protective layer.
摘要翻译：具有高信息密度能力的铁磁层以薄的，连续的，均匀的和连贯的方式沉积在合适的衬底上，利用一种方法，该方法涉及向基体提供导电铜表面，并且电沉积不大于20微英寸的钴的铁磁性层，在铜的顶部。钴在六分之一晶体形式的沉积中由氯化钴缓冲的低分子量羧酸在约3.6和5.8之间的pH范围内沉积。然后用合适的保护层覆盖钴电沉积物。

2. 发明授权

US3869356A Method of making a thin, flexible magnetic memory layer 失效
标题翻译：制造薄膜，柔性磁记忆层的方法
公开(公告)号：US3869356A
公开(公告)日：1975-03-04
申请号：US37685573
申请日：1973-07-05
申请人： NICO MAGNETICS INC
发明人： LONG KENNETH E , TAYLOR DAVID W
IPC分类号： C23C18/40 , G11B5/858 , C23F17/00 , C23B5/08
CPC分类号： C23C18/405 , G11B5/858 , Y10S205/922
摘要： A ferromagnetic layer having high information density capabilities is deposited on a flexible substrate in a thin, continuous, uniform and coherent manner utilizing a process which involves coating the substrate with a smooth layer of gold and a copolymer of vinylidine chloride and acrylonitrile, chemically depositing a layer of copper thereover and electrodepositing the ferromagnetic layer of cobalt no greater than 20 microinches, on top of the copper. A chemical plating bath of copper formate is used to plate the copper while the cobalt is deposited in the form of hexagonal crystals from a bath of cobalt chloride buffered with a low molecular weight carboxylic acid in a pH range of between about 3.6 and 5.8. The cobalt layer possesses a nominal coercivity within the range 200-500 oersteds which, upon exposure to a 60 cycle per second alternating current field having a strength of 1000 oersteds, exhibits a coercivity tolerance not greater than about 40 per cent of the nominal coercivity. This results in an extremely rapid switching time, thereby permitting theretofore unattainable high bit density capabilities.
摘要翻译：具有高信息密度能力的铁磁层以薄的，连续的，均匀的和连贯的方式沉积在柔性基底上，利用一种方法，该方法涉及用光滑的金层和氯乙烯与丙烯腈的共聚物涂覆基底，化学沉积铜层，并在钴的顶部上电沉积钴铁磁层不大于20微英寸。使用甲酸铜的化学镀浴来镀铜，同时以约3.6至5.8的pH范围从低分子量羧酸缓冲的氯化钴浴中以六方晶形式沉积钴。钴层具有在200-500奥斯特范围内的额定矫顽力，其在暴露于具有1000奥斯特强度的每秒60次循环交流电场时，具有不大于额定矫顽力的约40％的矫顽力公差。这导致非常快的切换时间，从而允许无法实现的高位密度能力。

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