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1. 发明授权

US08003534B2 Method of forming semiconductor devices in wafer assembly 有权
公开(公告)号：US08003534B2
公开(公告)日：2011-08-23
申请号：US12980182
申请日：2010-12-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L21/44
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.

2. 发明授权

US4919749A Method for making high resolution silicon shadow masks 失效
标题翻译：制造高分辨率硅阴影掩模的方法
公开(公告)号：US4919749A
公开(公告)日：1990-04-24
申请号：US357481
申请日：1989-05-26
申请人： Philip E. Mauger , Alex R. Shimkunas , Junling J. Yen
发明人： Philip E. Mauger , Alex R. Shimkunas , Junling J. Yen
IPC分类号： G03F1/20 , H01L21/027 , H01L21/3065
CPC分类号： G03F1/20 , H01L21/3065
摘要： A high resolution shadow mask with low pattern distortion is formed from a silicon membrane with a pattern of apertures etched through the membrane by reactive ion etching using a silicon dioxide masking layer. To achieve low distortion over a large area membrane, the stress of the membrane and the masking layer is controlled to remain within an optimal range so that the stress relief that occurs when the apertures are formed is kept negligibly small. A silicon membrane with controlled stress is made using a p/n junction electrochemical etch-stop process. After making the membrane, it is then coated with a deposited silicon dioxide layer. The stress of the oxide layer may be adjusted to an optimum value by annealing after deposition. The membrane with the oxide mask layer is next coated with a photoresist layer which is then patterned with the desired shadow mask pattern. Once the photoresist is patterned, the pattern is then transferred into the oxide layer by reactive ion etching. The patterned oxide then serves as the mask for etching apertures through the silicon membrane, also done by reactive ion etching.
摘要翻译：具有低图案畸变的高分辨率荫罩由具有通过使用二氧化硅掩蔽层的反应离子蚀刻通过膜蚀刻的孔的图案的硅膜形成。为了在大面积膜上实现低变形，膜和掩模层的应力被控制在保持在最佳范围内，使得当形成孔时发生的应力释放保持可忽略不计。使用p / n结电化学蚀刻停止工艺制备具有受控应力的硅膜。制膜后，用沉积的二氧化硅层涂覆。氧化物层的应力可以通过沉积后退火来调节到最佳值。随后用具有氧化物掩模层的膜涂覆光致抗蚀剂层，然后用期望的荫罩图案将其图案化。一旦光致抗蚀剂被图案化，然后通过反应离子蚀刻将图案转移到氧化物层中。图案化的氧化物然后用作通过硅膜蚀刻孔的掩模，也通过反应离子蚀刻进行。

3. 发明公开

US20230225737A1 VASCULAR OCCLUSION DEVICES UTILIZING THIN FILM NITINOL FOILS 审中-公开
公开(公告)号：US20230225737A1
公开(公告)日：2023-07-20
申请号：US18156735
申请日：2023-01-19
申请人： Nanostructures, Inc.
发明人： Philip Mauger
IPC分类号： A61B17/12
CPC分类号： A61B17/12113 , A61B17/12031 , A61B17/12172
摘要： A deployable occlusion device for filling an aneurysm. The occlusion device includes a support structure, for example a wire or otherwise elongate structure. The occlusion device also includes a mesh component having a porosity. The mesh component has a first end portion and a second end portion. The first end portion of the mesh component is attached to the support structure and the second end portion of the mesh component is a free end. The mesh component extends from the support structure.

4. 发明申请

US20110092046A1 Method of forming semiconductor devices in wafer assembly 有权
标题翻译：在晶片组件中形成半导体器件的方法
公开(公告)号：US20110092046A1
公开(公告)日：2011-04-21
申请号：US12980182
申请日：2010-12-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L21/78 , H01L21/32
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.
摘要翻译：一种用于将半导体器件保持在晶片中的装置和方法。棒连接到晶片。第一侧壁包括第一端和第二侧，并且在其第一端处连接到杆。第一突片包括第一端和第二端，并且在其第一端处连接到第一侧壁的第二端并且在其第二端处连接到半导体器件的第一侧。第一突片的厚度小于棒的厚度和第一侧壁的厚度。

5. 发明授权

US07913544B1 Scanning probe devices and methods for fabricating same 有权
标题翻译：扫描探针装置及其制造方法
公开(公告)号：US07913544B1
公开(公告)日：2011-03-29
申请号：US11985622
申请日：2007-11-15
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： G01Q70/16
CPC分类号： G01Q70/16 , G01Q70/10
摘要： The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
摘要翻译：本发明涉及扫描探针，其中悬臂通过集成触笔基座接触触针，以及用于制造这种探针的方法。与其他类型的扫描探针相比，该探针提供了许多优点，以避免在某些应用中需要柔软的反射涂层，并且提供尖锐的触针尖端的简单制造，关于功能化尖端的灵活性以及最小的热漂移减少双压缩效应。这些特征的优点有助于通常采集样品的高分辨率图像，特别是在液体中。

6. 发明申请

US20210275189A9 SYSTEM AND METHODS FOR EMBOLIZED OCCLUSION OF NEUROVASCULAR ANEURYSMS 有权
公开(公告)号：US20210275189A9
公开(公告)日：2021-09-09
申请号：US16303507
申请日：2017-05-25
申请人： Nanostructures, Inc.
发明人： Philip Mauger , Michael Williamson , Mark Alan Adler , Justin Allen Payne
IPC分类号： A61B17/12
摘要： The present disclosure is related to an occlusion device having a mesh structure. The occlusion device configured to transition between a two-dimensional configuration and a three-dimensional configuration. In the two-dimensional configuration and at rest, the occlusion device is flat or planar. In the three-dimensional configuration, the occlusion device defines an internal volume.

7. 发明授权

US08397555B1 Scanning probe devices 有权
标题翻译：扫描探头设备
公开(公告)号：US08397555B1
公开(公告)日：2013-03-19
申请号：US13036119
申请日：2011-02-28
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： G01Q60/48 , G01Q70/16 , C23F1/00
CPC分类号： G01Q70/16 , G01Q70/10
摘要： The present invention is directed to scanning probes in which a cantilever contacts a stylus via an integrated stylus base pad, and methods for fabricating such probes. The probe offer many advantages over other types of scanning probes with respect to eliminating the need for a soft, reflective coating in some applications and providing for the simple fabrication of sharp stylus tips, flexibility with respect to functionalizing the tip, and minimal thermal drift due to reduced bimorph effect. The advantage of these features facilitates the acquisition of high resolution images of samples in general, and particularly in liquids.
摘要翻译：本发明涉及扫描探针，其中悬臂通过集成触笔基座接触触针，以及用于制造这种探针的方法。与其他类型的扫描探针相比，该探针提供了许多优点，以避免在某些应用中需要柔软的反射涂层，并且提供尖锐的触针尖端的简单制造，关于功能化尖端的灵活性以及最小的热漂移减少双压缩效应。这些特征的优点有助于通常采集样品的高分辨率图像，特别是在液体中。

8. 发明申请

US20080116533A1 Semiconductor device in wafer assembly 有权
标题翻译：晶圆组件中的半导体器件
公开(公告)号：US20080116533A1
公开(公告)日：2008-05-22
申请号：US11603562
申请日：2006-11-22
申请人： Ami Chand
发明人： Ami Chand
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81C1/00873
摘要： An apparatus and method for holding a semiconductor device in a wafer. A bar is connected to the wafer. A first sidewall comprises a first end and a second, and is connected to the bar at its first end. A first tab comprises a first end and a second end, and is connected to the second end of the first sidewall at its first end and connected to the first side of the semiconductor device at its second end. The thickness of the first tab is less than the thickness of the bar and the thickness of the first sidewall.
摘要翻译：一种用于将半导体器件保持在晶片中的装置和方法。棒连接到晶片。第一侧壁包括第一端和第二侧，并且在其第一端处连接到杆。第一突片包括第一端和第二端，并且在其第一端处连接到第一侧壁的第二端并且在其第二端处连接到半导体器件的第一侧。第一突片的厚度小于棒的厚度和第一侧壁的厚度。

9. 发明授权

US4966663A Method for forming a silicon membrane with controlled stress 失效
标题翻译：用受控应力形成硅膜的方法
公开(公告)号：US4966663A
公开(公告)日：1990-10-30
申请号：US243816
申请日：1988-09-13
申请人： Philip E. Mauger
发明人： Philip E. Mauger
IPC分类号： G01L9/04 , C23C14/00 , C25F3/12 , C30B29/06 , C30B31/22 , H01L21/265 , H01L21/3063 , H01L29/84
CPC分类号： B81C1/00666 , C23C14/0005 , C25F3/12 , H01L21/3063 , B81B2203/0127 , B81C2201/0164 , Y10S438/924
摘要： A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to silicon and controlling both the total concentration and concentration profile of the dopant. The membrane is then formed by electrochemically etching away the substrate beneath the doped layer.
摘要翻译：一种制备具有预定应力特性的硅膜的方法。掺杂硅衬底以产生如期望的膜厚度那样厚的掺杂层。通过基于其相对于硅的原子直径选择掺杂剂并控制掺杂剂的总浓度和浓度分布来控制掺杂层内的应力。然后通过电化学蚀刻掉掺杂层下面的衬底形成膜。

10. 发明授权

US11589872B2 Vascular occlusion devices utilizing thin film nitinol foils 有权
公开(公告)号：US11589872B2
公开(公告)日：2023-02-28
申请号：US16965919
申请日：2019-01-29
申请人： Nanostructures, Inc.
发明人： Philip Mauger
IPC分类号： A61B17/12
摘要： A deployable occlusion device for filling an aneurysm. The occlusion device includes a support structure, for example a wire or otherwise elongate structure. The occlusion device also includes a mesh component having a porosity. The mesh component has a first end portion and a second end portion. The first end portion of the mesh component is attached to the support structure and the second end portion of the mesh component is a free end. The mesh component extends from the support structure.

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